Change of radiative and low-frequency noise characteristics of UV LEDs based on InGaN/GaN quantum wells at liquid nitrogen temperature

The results of temperature studies of UV-band LEDs based structures with InGaN/GaN quantum wells are presented. At room temperature and liquid nitrogen temperature, volt-ampere characteristics, frequency dependences of low-frequency noise density, external quantum efficiency, and optical power were measured. The performed studies showed differences in the characteristics of UV LEDs at temperatures T = 77.4 K from those at T = 295 K. The possible physical mechanisms of the formation of low-frequency current noise, carrier transport, and the effect on the external quantum efficiency of the processes of radiative and non-radiative recombination at two temperatures are considered.