Articles by keywords "Silicon"
The electron and proton irradiation effects on the properties of high-voltage 4H-SiC Schottky diodes within the operating temperature range
- Year: 2024
- Volume: 17
- Issue: 1
- 11
- 229
- Pages: 9-20
Size effects in molecular dynamics simulations of a fullerene ion impact on the silicon surface
- Year: 2023
- Volume: 16
- Issue: 4
- 11
- 691
- Pages: 76-85
Study of morphology and composition of nanoscale AlGaN heterostructures obtained by PA MBE technique on the silicon substrates with the use of porous silicon as buffer layer
- Year: 2023
- Volume: 16
- Issue: 3.2
- 5
- 480
- Pages: 249-254
Photo-assisted adsorption of enzyme molecules onto a surface-modified silicon substrate
- Year: 2023
- Volume: 16
- Issue: 3.1
- 2
- 613
- Pages: 444-448
Heterojunction solar cells based on nanostructured black silicon
- Year: 2023
- Volume: 16
- Issue: 3.1
- 4
- 630
- Pages: 434-438
Exciton dynamics characterization by electrochemical impedance spectroscopy of CsPbBr3(I3) perovskite nanocrystals for photovoltaic application
- Year: 2023
- Volume: 16
- Issue: 3.1
- 5
- 623
- Pages: 278-283
Towards nanowire-based selective vapor sensing with an aid of impedance spectroscopy
Kondratev V.M.
Kozko I.A.
Karaseva E.P.
Vyacheslavova E.A.
Shugabaev T.M.
Svinkin N.А.
Bolshakov A.D.
- Year: 2023
- Volume: 16
- Issue: 3.1
- 3
- 591
- Pages: 151-156
Effect of plasma-chemical treatment of Si(001) substrates on the subsequent epitaxial growth of GaAs
- Year: 2023
- Volume: 16
- Issue: 3.1
- 5
- 614
- Pages: 122-127
Effect of temperature during homoepitaxial growth of Si on Si(100) on the character of reflection high-energy electron diffraction patterns
- Year: 2023
- Volume: 16
- Issue: 3.1
- 9
- 660
- Pages: 112-116
Mg2Si film on Si(111) prepared by Ultra-Fast Mg reactive deposition: crystal structure and thermoelectric properties
Chernev I.M.
Subbotin E.Yu.
Argunov E.V.
Kozlov A.G.
Gerasimenko A.V.
Galkin N.G.
Poliakov M.V.
Volkova L.S.
Dudin A.A.
Gouralnik A.S.
- Year: 2023
- Volume: 16
- Issue: 3.1
- 12
- 781
- Pages: 106-111
A change in the morphology of multilayer porous silicon with a stepwise decrease in the etching current density
Lenshin A.S.
Peshkov Ya.A.
Chernousova O.V.
Kannykin S.V.
Grechkina M.V.
Minakov D.A.
Zolotukhin D.S.
Agapov B.L.
- Year: 2023
- Volume: 16
- Issue: 3.1
- 6
- 581
- Pages: 100-105
Light-emitting and light-detecting perovskite electrochemical cell on silicon
- Year: 2023
- Volume: 16
- Issue: 3.1
- 3
- 649
- Pages: 94-99
Ultrathin Cr and Fe monosilicides on Si(111) substrate: formation, optical and thermoelectrical properties
Galkin K.N.
Chernev I.M.
Subbotin E.Yu.
Maslov A.M.
Kropachev O.V.
Goroshko D.L.
Balagan S.A.
Argunov E.V.
Gutakovsky A.K.
Galkin N.G.
- Year: 2023
- Volume: 16
- Issue: 3.1
- 14
- 1040
- Pages: 84-89
The features in the formation of oxide porous structures based on SiO2–SnOх
- Year: 2023
- Volume: 16
- Issue: 3.1
- 13
- 606
- Pages: 10-15
Formation of Mn4 Si7 films by magnetron sputtering and a wide range of their thermoelectric properties
- Year: 2023
- Volume: 16
- Issue: 2
- 14
- 1428
- Pages: 78-88
Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics
- Year: 2023
- Volume: 16
- Issue: 1.3
- 5
- 1092
- Pages: 176-181
Curvature and bow of III-N HEMT structures during epitaxy on silicon substrates
- Year: 2023
- Volume: 16
- Issue: 1.3
- 16
- 1175
- Pages: 50-54
Transfer of 3C-SiC heteroepitaxial layers grown on silicon to a 6H-SiC substrate by direct bonding technique
- Year: 2023
- Volume: 16
- Issue: 1.3
- 15
- 1215
- Pages: 39-43
Modeling of performance enhancement of the TAIGA-IACT Cherenkov gamma-ray telescope equipped with semiconductor photomultipliers
- Year: 2023
- Volume: 16
- Issue: 1.2
- 8
- 1076
- Pages: 423-428
Development of detector cluster based on silicon photomultipliers for the Cherenkov gamma-ray telescope TAIGA-IACT
- Year: 2023
- Volume: 16
- Issue: 1.2
- 14
- 1088
- Pages: 410-416
Kinetics of current outflow from electron-hole plasma generated in silicon detectors by relativistic heavy ions
- Year: 2023
- Volume: 16
- Issue: 1.2
- 4
- 1182
- Pages: 295-301
Radiation hardness of silicon semiconductor detectors under irradiation with fission products of 252Cf nuclide
Bazlov N.V.
Derbin A.
Drachnev I.S.
Kotina I.M.
Kon’kov O.I.
Lomskaya I.S.
Mikulich M.S.
Muratova V.N.
Semenov D.A.
Trushin M.V.
Unzhakov E.V.
- Year: 2023
- Volume: 16
- Issue: 1.2
- 5
- 1173
- Pages: 287-294
Flexible solar cells based on PEDOT:PSS and vertically aligned silicon structures
- Year: 2023
- Volume: 16
- Issue: 1.2
- 32
- 1289
- Pages: 10-17
Bragg peak effect on the electrical characteristics of Si detectors irradiated with medium energy 40Ar ions
- Year: 2023
- Volume: 16
- Issue: 1.1
- 4
- 1138
- Pages: 416-421
Compositions based on porous silicon and nickel oxide obtained by cooperative synthesis
- Year: 2023
- Volume: 16
- Issue: 1.1
- 15
- 1394
- Pages: 393-397
Numerical simulation of the temperature field distribution in the epitaxial graphene growth setup
- Year: 2023
- Volume: 16
- Issue: 1.1
- 20
- 1315
- Pages: 309-314
Дислокационная фотолюминесценция в самоимплантированном кремнии с различными ориентациями поверхности
- Year: 2023
- Volume: 16
- Issue: 1.1
- 8
- 1230
- Pages: 162-166
Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface
Reznik R.R.
Gridchin V.O.
Kotlyar K.P.
Dragunova A.S.
Kryzhanovskaya N.V.
Samsonenko Yu.B.
Soshnikov I.P.
Khrebtov A.I.
Cirlin G.E.
- Year: 2023
- Volume: 16
- Issue: 1.1
- 15
- 1223
- Pages: 153-157
Evolution of the crystal microstructure of hybrid SiC/Si substrates grown by the method of atomic substitution
- Year: 2023
- Volume: 16
- Issue: 1.1
- 9
- 1285
- Pages: 113-118
Self-organization of the structure of porous silicon carbide under external influences
- Year: 2023
- Volume: 16
- Issue: 1.1
- 5
- 1242
- Pages: 79-83
Study of quasi 1D silicon nanostructures adsorption properties via impedance spectroscopy
Kondratev V.M.
Vyacheslavova E.A.
Morozov Ivan A.
Nalimova S.S.
Moshnikov V.A.
Gudovskikh A.S.
Bolshakov A.D.
- Year: 2023
- Volume: 16
- Issue: 1.1
- 20
- 1238
- Pages: 43-48
Radiation of high-energy electrons when channeling in the bent silicon and germanium monocrystals
- Year: 2023
- Volume: 16
- Issue: 1
- 14
- 1794
- Pages: 33-50
Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates
Gridchin V.O.
Reznik R.R.
Kotlyar K.P.
Shugabaev T.M.
Dragunova A.S.
Kryzhanovskaya N.V.
Cirlin G.E.
- Year: 2022
- Volume: 15
- Issue: 3.3
- 21
- 1682
- Pages: 311-314
Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate
- Year: 2022
- Volume: 15
- Issue: 3.3
- 25
- 1732
- Pages: 281-284
Optical studies of InP nanostructures monolithically integrated in Si (100)
- Year: 2022
- Volume: 15
- Issue: 3.3
- 16
- 1676
- Pages: 260-264
Plasma deposited indium phosphide and its electrophysical properties
- Year: 2022
- Volume: 15
- Issue: 3.3
- 19
- 1918
- Pages: 123-127
Investigation of degradation characteristics of photosensitive structures with porous silicon
- Year: 2022
- Volume: 15
- Issue: 3.3
- 10
- 1747
- Pages: 82-85
Study of FIB-modified silicon areas by AFM and Raman spectroscopy
Nikitina L.S.
Lakhina E.A.
Eremenko M.M.
Balakirev S.V.
Chernenko N.E.
Shandyba N.A.
Solodovnik M.S.
Ageev O.A.
- Year: 2022
- Volume: 15
- Issue: 3.3
- 16
- 1690
- Pages: 59-63
Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si
- Year: 2022
- Volume: 15
- Issue: 3.3
- 19
- 1682
- Pages: 54-58
Effect of FIB-modification of Si(111) surface on GaAs nanowire growth
- Year: 2022
- Volume: 15
- Issue: 3.3
- 10
- 1666
- Pages: 36-41
Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures
- Year: 2022
- Volume: 15
- Issue: 3.3
- 21
- 1726
- Pages: 31-35
Influence of the initial surface state on the ripple formation induced by O2+ sputtering of Si
- Year: 2022
- Volume: 15
- Issue: 3.3
- 29
- 1774
- Pages: 8-12
Silicon nanoantenna for controlling the polarization direction of radiation from standalone quantum light source
- Year: 2022
- Volume: 15
- Issue: 3.2
- 6
- 1831
- Pages: 235-239
Study of recombination and transport properties of a-Si:H(i)/ μc-Si:H(n) contact system for crystalline silicon solar cells
- Year: 2022
- Volume: 15
- Issue: 3.2
- 13
- 1816
- Pages: 150-154
Dependence of light-addressable potentiometric sensor sensitivity on photo-induced processes in Si
- Year: 2022
- Volume: 15
- Issue: 3.2
- 14
- 1681
- Pages: 135-139
Study of quasi 1-D silicon nanostructures adsorption properties
Kondratev V.M.
Vyacheslavova E.A.
Morozov Ivan A.
Nalimova S.S.
Moshnikov V.A.
Gudovskikh A.S.
Bolshakov A.D.
- Year: 2022
- Volume: 15
- Issue: 3.2
- 42
- 1898
- Pages: 10-15
Сurrent-voltage characteristics and photoelectric properties of por-Si/Si-p/Si-n diodes with different porous layer thickness
- Year: 2022
- Volume: 15
- Issue: 3.1
- 14
- 2103
- Pages: 143-148
Influence of current density, anodization time, and illumination on the thickness of porous silicon in wafers with the built-in p–n junction and its photoluminescence
- Year: 2022
- Volume: 15
- Issue: 3.1
- 14
- 1969
- Pages: 137-142
Effect of thickness and annealing of the Si(001)2×1-Cu wetting layer on the morphology of layered nanofilms based on Fe, Co, and Cu and their ferromagnetic properties
- Year: 2022
- Volume: 15
- Issue: 3.1
- 19
- 2085
- Pages: 131-136
Structures and electrical conductance at the initial stages of magnesium growth on Si(111)-Pb surface
- Year: 2022
- Volume: 15
- Issue: 3.1
- 8
- 2133
- Pages: 107-112
Morphology evolution of mesoporous silicon powder formed by Pd-assisted chemical etching at temperatures of 25 – 75 °C
- Year: 2022
- Volume: 15
- Issue: 3.1
- 10
- 2022
- Pages: 93-100
Giant lateral photovoltaic effect in the TiO2/SiO2/p-Si heterostructure
- Year: 2022
- Volume: 15
- Issue: 3.1
- 18
- 2189
- Pages: 32-37
Electronic structure and optical properties of Ca2Si films grown on silicon different oriented substrates and calculated from first principles
Galkin K.N.
Kropachev O.V.
Maslov A.M.
Chernev I.M.
Subbotin E.Yu.
Galkin N.G.
Alekseev A.Yu.
Migas D.B.
- Year: 2022
- Volume: 15
- Issue: 3.1
- 34
- 2098
- Pages: 16-21
Formation, structure, and optical properties of singlephase CaSi and CaSi2 films on Si substrates
Galkin N.G.
Galkin K.N.
Kropachev O.V.
Chernev I.M.
Dotsenko S.A.
Goroshko D.L.
Subbotin E.Yu.
Alekseev A.Yu.
Migas D.B.
- Year: 2022
- Volume: 15
- Issue: 3.1
- 60
- 2168
- Pages: 9-15
Optical-electric phase characteristics of silicon negative-U nanosandwiches
- Year: 2021
- Volume: 14
- Issue: 4
- 70
- 3077
- Pages: 9-20
Contribution of internal ionization processes in semiconductors to radiative losses of relativistic electrons
- Year: 2020
- Volume: 13
- Issue: 3
- 44
- 4862
- Pages: 7-14
The efficiency of solar energy conversion by the CdS/por-Si/p-Si heterostructure: the dopant effect
- Year: 2020
- Volume: 13
- Issue: 2
- 32
- 4704
- Pages: 17-26
The interaction processes of silicon tetrafluoride and hexafluorosilicates with hydrogen-containing and oxygenated substances: a thermodynamic analysis
- Year: 2020
- Volume: 13
- Issue: 1
- 53
- 5232
- Pages: 92-105
Diffusion-reaction model of the interaction of sili- cide-forming metal with the silicon carbide
- Year: 2009
- Issue: 1
- 0
- 5700
- Pages: 64-71
Properties of the semiconductor structure with a p–n-junction created in a porous silicon film under laser radiation
- Year: 2018
- Volume: 11
- Issue: 1
- 29
- 6235
- Pages: 18-25
Electron and positron propagation in straight and periodically bent axial and planar silicon channels
- Year: 2015
- Issue: 3
- 359
- 6019
- Pages: 173-184
The features of the silicon gamma-ray detector amplitude spectra
- Year: 2013
- Issue: 3
- 708
- 6521
- Pages: 99-105
A formation method of amorphous and crystalline silicon nanoclusters in dielectric films
- Year: 2010
- Issue: 1
- 0
- 5554
- Pages: 66-71
Mechanical stresses in gallium nitride films grown on substrates with a mask
- Year: 2011
- Issue: 3
- 1
- 5731
- Pages: 14-16
Simulation of sputtering of the silicon carbide surface under bombardment by ions and clusters
- Year: 2011
- Issue: 2
- 0
- 5455
- Pages: 67-74
The Frenkel pairs formation in the silicon under high energy electron and proton irradiation
- Year: 2011
- Issue: 2
- 0
- 5859
- Pages: 13-21
The blood vessel models: the technology development for makingand following investigation
- Year: 2012
- Issue: 3
- 0
- 5707
- Pages: 75-79
The features of defect formation in silicon under molecular ion bombardment
- Year: 2012
- Issue: 3
- 0
- 5974
- Pages: 64-70
Improvement and stabilization of optical characteristics of the porous silicon
- Year: 2013
- Issue: 2
- 659
- 6485
- Pages: 130-136