Articles by keywords "Silicon"
Temperature-dependent infrared photoluminescence study of GeSn/Si and GeSiSn/Si multiple quantum wells
- Year: 2026
- Volume: 19
- Issue: 1.1
- 0
- 34
- Pages: 45-50
Lifetimes of electrons and holes in pure Si at temperature 40 mK
- Year: 2026
- Volume: 19
- Issue: 1.1
- 1
- 41
- Pages: 21-26
The resistive switching effect in the n-GaN/p-Si heterostructures
- Year: 2026
- Volume: 19
- Issue: 1
- 16
- 405
- Pages: 9-18
Femtosecond laser modification of amorphous silicon films for photovoltaic and polarization optics applications
- Year: 2025
- Volume: 18
- Issue: 4.1
- 11
- 624
- Pages: 117-122
Ca5Si3 film MBE growth on Si(111) substrate: structure and optical properties
- Year: 2025
- Volume: 18
- Issue: 4.1
- 2
- 610
- Pages: 73-78
MBE growth of GaAs nanowires with a silicon rich particle on the top
- Year: 2025
- Volume: 18
- Issue: 4.1
- 8
- 594
- Pages: 62-66
Experimental and ab initio study of Si(111)(2/3)√3×(2/3)√3-Mg models
- Year: 2025
- Volume: 18
- Issue: 4.1
- 4
- 601
- Pages: 26-30
The origin of the lateral photovoltaic effect in the SiO2/TeO2/Bi2Te3/n-Si(111) multilayer structure
- Year: 2025
- Volume: 18
- Issue: 4.1
- 12
- 600
- Pages: 15-20
Si-Fe composites with embedded α-FeSi2 nanocrystals: formation and thermoelectric properties
- Year: 2025
- Volume: 18
- Issue: 4.1
- 5
- 581
- Pages: 9-14
Marker ink based dye as a tool for intravital high-resolution visualization of cells on a silicon
- Year: 2025
- Volume: 18
- Issue: 3.2
- 3
- 646
- Pages: 269-274
Thermal management of solar cells through down-conversion nanoparticles
- Year: 2025
- Volume: 18
- Issue: 3.2
- 1
- 624
- Pages: 237-241
Localized Ga droplets formation on nanopatterned silicon substrates
- Year: 2025
- Volume: 18
- Issue: 3.2
- 4
- 663
- Pages: 57-59
Morphological features of CVD-grown Si nanostructures in meso- and macroporous silicas
- Year: 2025
- Volume: 18
- Issue: 3.1
- 4
- 663
- Pages: 252-257
Structural and optical properties of InP layers obtained by plasma-enhanced atomic layer deposition at different temperatures
- Year: 2025
- Volume: 18
- Issue: 3.1
- 3
- 708
- Pages: 247-251
Investigation of second harmonic generation in spherical mesoporous Si/SiO2 nanoparticles on gold
- Year: 2025
- Volume: 18
- Issue: 3.1
- 5
- 703
- Pages: 191-194
Black silicon formation using cryogenic etching and photoresist layer
- Year: 2025
- Volume: 18
- Issue: 3.1
- 4
- 733
- Pages: 182-186
Formation of a graphene-like conductive film on the surface of SiC by laser destruction of silicon
- Year: 2025
- Volume: 18
- Issue: 3.1
- 3
- 654
- Pages: 169-172
All-silicon elements of terahertz photonics obtained by plasma etching
- Year: 2025
- Volume: 18
- Issue: 3.1
- 3
- 666
- Pages: 165-168
Metamaterials formed on the surface of silicon carbide by plasma treatment
- Year: 2025
- Volume: 18
- Issue: 3.1
- 9
- 723
- Pages: 161-164
Composition and properties of porous silicon nanoparticles with deposited cinnarizine
- Year: 2025
- Volume: 18
- Issue: 3.1
- 6
- 709
- Pages: 99-104
Copper deposition onto porous silicon by vacuum thermal evaporation
- Year: 2025
- Volume: 18
- Issue: 3.1
- 4
- 731
- Pages: 59-64
Si-based photodetector with an Mg2Si contact layer for SWIR range
- Year: 2025
- Volume: 18
- Issue: 3.1
- 4
- 709
- Pages: 53-58
Influence of the growth regime on the transport properties of doped Mg2Si films
- Year: 2025
- Volume: 18
- Issue: 3.1
- 6
- 783
- Pages: 40-43
Ordered GaAs NW growth on Si(111) substrates modified by two-step FIB treatment
- Year: 2025
- Volume: 18
- Issue: 3.1
- 10
- 783
- Pages: 19-22
Memristor effect in heterostructures based on gallium nitride nanowires on silicon
- Year: 2025
- Volume: 18
- Issue: 4
- 20
- 836
- Pages: 9-20
The influence of hole states on the electronic and electrostatic properties of 2D layers based on the silicon-germaniumsilicon heterostructure
- Year: 2025
- Volume: 18
- Issue: 2
- 28
- 3965
- Pages: 22-29
Infrared photodetectors based on InAsP epitaxial nanowires on silicon
- Year: 2025
- Volume: 18
- Issue: 2
- 52
- 4422
- Pages: 9-21
Silicon nanowire based sensorics of acids and bases
- Year: 2025
- Volume: 18
- Issue: 1.1
- 19
- 4090
- Pages: 145-151
Influence of Ge nanolayers on the resistive switching effect in amorphous hydrogenated silicon based structures
- Year: 2025
- Volume: 18
- Issue: 1.1
- 9
- 3910
- Pages: 134-139
Fluorescence of hybrid structures based on carbon dots and GaP, GaN, Si nanowires
- Year: 2025
- Volume: 18
- Issue: 1.1
- 14
- 3944
- Pages: 77-82
Study of GaPN(As) layers grown by molecular beam epitaxy on silicon substrates
- Year: 2024
- Volume: 17
- Issue: 3.2
- 16
- 2940
- Pages: 275-278
Silicon/graphite nanocomposite for lithium-ion battery anode
- Year: 2024
- Volume: 17
- Issue: 3.2
- 30
- 3611
- Pages: 271-274
Nonlinear optical phenomena in mesoporous SiO2 and Si/SiO2 nanoparticles
- Year: 2024
- Volume: 17
- Issue: 3.2
- 16
- 2891
- Pages: 207-211
The electronic band structure of hexagonal silicon polytypes
- Year: 2024
- Volume: 17
- Issue: 4
- 55
- 4136
- Pages: 9-19
Electrical characteristics of semiconductor film structures obtained on a flexible substrate
- Year: 2024
- Volume: 17
- Issue: 3.2
- 8
- 2873
- Pages: 187-191
Effect of diameter on lattice thermal conductivity of α-FeSi2 and ε-FeSi nanowires
- Year: 2024
- Volume: 17
- Issue: 3.2
- 11
- 2965
- Pages: 107-111
The quest for direct band beta iron disilicide: collaboration of theoretical and experimental approaches
- Year: 2024
- Volume: 17
- Issue: 3.2
- 5
- 3059
- Pages: 103-106
Mg2Si synthesis on silicon crystals with different aspect ratio
- Year: 2024
- Volume: 17
- Issue: 3.2
- 25
- 3034
- Pages: 31-35
Deposition of tin and gold on porous silicon by vacuum thermal spraying
- Year: 2024
- Volume: 17
- Issue: 3.2
- 18
- 3051
- Pages: 20-24
Autostainer feature for multielectrode arrays: proof-of-concept
- Year: 2024
- Volume: 17
- Issue: 3.1
- 17
- 3081
- Pages: 320-324
Laser-stimulated tin-induced crystallization of silicon on flexible nonwoven substrates
- Year: 2024
- Volume: 17
- Issue: 3.1
- 11
- 3428
- Pages: 261-265
Gallium phosphide/black silicon heterojunction solar cells
- Year: 2024
- Volume: 17
- Issue: 3.1
- 22
- 3066
- Pages: 199-203
Effect of light incidence angle on the characteristics of silicon solar cells with different texturing
- Year: 2024
- Volume: 17
- Issue: 3.1
- 11
- 3007
- Pages: 134-137
Resonant scattering of silicon nanopillars for nonlinear optics
- Year: 2024
- Volume: 17
- Issue: 3.1
- 10
- 3221
- Pages: 110-114
Combined approach of patterning on SiO2/Si substrate using ion beam and chemical wet etching
- Year: 2024
- Volume: 17
- Issue: 3.1
- 16
- 3080
- Pages: 75-78
The effect of the rate of temperature change on the thermomigration of liquid inclusions in silicon
- Year: 2024
- Volume: 17
- Issue: 3.1
- 25
- 3265
- Pages: 23-27
Numerical simulation of the tunnel effect in the gallium nitride heterostructure on silicon
- Year: 2024
- Volume: 17
- Issue: 3
- 27
- 3727
- Pages: 46-56
The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique
- Year: 2024
- Volume: 17
- Issue: 2
- 47
- 4508
- Pages: 120-133
Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy
- Year: 2024
- Volume: 17
- Issue: 1.1
- 50
- 3689
- Pages: 62-67
Investigation of nanosized structures using internal friction effect
- Year: 2024
- Volume: 17
- Issue: 1.1
- 21
- 3891
- Pages: 37-42
Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates
- Year: 2024
- Volume: 17
- Issue: 1
- 26
- 5013
- Pages: 38-46
The electron and proton irradiation effects on the properties of high-voltage 4H-SiC Schottky diodes within the operating temperature range
- Year: 2024
- Volume: 17
- Issue: 1
- 65
- 4940
- Pages: 9-20
Size effects in molecular dynamics simulations of a fullerene ion impact on the silicon surface
- Year: 2023
- Volume: 16
- Issue: 4
- 26
- 5057
- Pages: 76-85
Study of morphology and composition of nanoscale AlGaN heterostructures obtained by PA MBE technique on the silicon substrates with the use of porous silicon as buffer layer
- Year: 2023
- Volume: 16
- Issue: 3.2
- 17
- 4415
- Pages: 249-254
Photo-assisted adsorption of enzyme molecules onto a surface-modified silicon substrate
- Year: 2023
- Volume: 16
- Issue: 3.1
- 7
- 4711
- Pages: 444-448
Heterojunction solar cells based on nanostructured black silicon
- Year: 2023
- Volume: 16
- Issue: 3.1
- 18
- 4573
- Pages: 434-438
Exciton dynamics characterization by electrochemical impedance spectroscopy of CsPbBr3(I3) perovskite nanocrystals for photovoltaic application
- Year: 2023
- Volume: 16
- Issue: 3.1
- 25
- 4676
- Pages: 278-283
Towards nanowire-based selective vapor sensing with an aid of impedance spectroscopy
- Year: 2023
- Volume: 16
- Issue: 3.1
- 12
- 4467
- Pages: 151-156
Effect of plasma-chemical treatment of Si(001) substrates on the subsequent epitaxial growth of GaAs
- Year: 2023
- Volume: 16
- Issue: 3.1
- 23
- 4547
- Pages: 122-127
Effect of temperature during homoepitaxial growth of Si on Si(100) on the character of reflection high-energy electron diffraction patterns
- Year: 2023
- Volume: 16
- Issue: 3.1
- 20
- 4552
- Pages: 112-116
Mg2Si film on Si(111) prepared by Ultra-Fast Mg reactive deposition: crystal structure and thermoelectric properties
- Year: 2023
- Volume: 16
- Issue: 3.1
- 57
- 5637
- Pages: 106-111
A change in the morphology of multilayer porous silicon with a stepwise decrease in the etching current density
- Year: 2023
- Volume: 16
- Issue: 3.1
- 9
- 4347
- Pages: 100-105
Light-emitting and light-detecting perovskite electrochemical cell on silicon
- Year: 2023
- Volume: 16
- Issue: 3.1
- 12
- 4457
- Pages: 94-99
Ultrathin Cr and Fe monosilicides on Si(111) substrate: formation, optical and thermoelectrical properties
- Year: 2023
- Volume: 16
- Issue: 3.1
- 24
- 5013
- Pages: 84-89
The features in the formation of oxide porous structures based on SiO2–SnOх
- Year: 2023
- Volume: 16
- Issue: 3.1
- 23
- 4900
- Pages: 10-15
Formation of Mn4 Si7 films by magnetron sputtering and a wide range of their thermoelectric properties
- Year: 2023
- Volume: 16
- Issue: 2
- 31
- 5984
- Pages: 78-88
Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics
- Year: 2023
- Volume: 16
- Issue: 1.3
- 11
- 4961
- Pages: 176-181
Curvature and bow of III-N HEMT structures during epitaxy on silicon substrates
- Year: 2023
- Volume: 16
- Issue: 1.3
- 34
- 4849
- Pages: 50-54
Transfer of 3C-SiC heteroepitaxial layers grown on silicon to a 6H-SiC substrate by direct bonding technique
- Year: 2023
- Volume: 16
- Issue: 1.3
- 43
- 5004
- Pages: 39-43
Modeling of performance enhancement of the TAIGA-IACT Cherenkov gamma-ray telescope equipped with semiconductor photomultipliers
- Year: 2023
- Volume: 16
- Issue: 1.2
- 19
- 4594
- Pages: 423-428
Development of detector cluster based on silicon photomultipliers for the Cherenkov gamma-ray telescope TAIGA-IACT
- Year: 2023
- Volume: 16
- Issue: 1.2
- 30
- 4915
- Pages: 410-416
Kinetics of current outflow from electron-hole plasma generated in silicon detectors by relativistic heavy ions
- Year: 2023
- Volume: 16
- Issue: 1.2
- 17
- 4807
- Pages: 295-301
Radiation hardness of silicon semiconductor detectors under irradiation with fission products of 252Cf nuclide
- Year: 2023
- Volume: 16
- Issue: 1.2
- 23
- 4780
- Pages: 287-294
Flexible solar cells based on PEDOT:PSS and vertically aligned silicon structures
- Year: 2023
- Volume: 16
- Issue: 1.2
- 50
- 5507
- Pages: 10-17
Bragg peak effect on the electrical characteristics of Si detectors irradiated with medium energy 40Ar ions
- Year: 2023
- Volume: 16
- Issue: 1.1
- 11
- 4742
- Pages: 416-421
Compositions based on porous silicon and nickel oxide obtained by cooperative synthesis
- Year: 2023
- Volume: 16
- Issue: 1.1
- 19
- 5337
- Pages: 393-397
Numerical simulation of the temperature field distribution in the epitaxial graphene growth setup
- Year: 2023
- Volume: 16
- Issue: 1.1
- 31
- 5536
- Pages: 309-314
Дислокационная фотолюминесценция в самоимплантированном кремнии с различными ориентациями поверхности
- Year: 2023
- Volume: 16
- Issue: 1.1
- 15
- 5058
- Pages: 162-166
Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface
- Year: 2023
- Volume: 16
- Issue: 1.1
- 26
- 5029
- Pages: 153-157
Evolution of the crystal microstructure of hybrid SiC/Si substrates grown by the method of atomic substitution
- Year: 2023
- Volume: 16
- Issue: 1.1
- 19
- 5070
- Pages: 113-118
Self-organization of the structure of porous silicon carbide under external influences
- Year: 2023
- Volume: 16
- Issue: 1.1
- 13
- 5108
- Pages: 79-83
Study of quasi 1D silicon nanostructures adsorption properties via impedance spectroscopy
- Year: 2023
- Volume: 16
- Issue: 1.1
- 31
- 5250
- Pages: 43-48
Radiation of high-energy electrons when channeling in the bent silicon and germanium monocrystals
- Year: 2023
- Volume: 16
- Issue: 1
- 36
- 6694
- Pages: 33-50
Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates
- Year: 2022
- Volume: 15
- Issue: 3.3
- 32
- 5773
- Pages: 311-314
Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate
- Year: 2022
- Volume: 15
- Issue: 3.3
- 38
- 5853
- Pages: 281-284
Optical studies of InP nanostructures monolithically integrated in Si (100)
- Year: 2022
- Volume: 15
- Issue: 3.3
- 21
- 5716
- Pages: 260-264
Plasma deposited indium phosphide and its electrophysical properties
- Year: 2022
- Volume: 15
- Issue: 3.3
- 42
- 6457
- Pages: 123-127
Investigation of degradation characteristics of photosensitive structures with porous silicon
- Year: 2022
- Volume: 15
- Issue: 3.3
- 11
- 5969
- Pages: 82-85
Study of FIB-modified silicon areas by AFM and Raman spectroscopy
- Year: 2022
- Volume: 15
- Issue: 3.3
- 23
- 5533
- Pages: 59-63
Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si
- Year: 2022
- Volume: 15
- Issue: 3.3
- 24
- 5538
- Pages: 54-58
Effect of FIB-modification of Si(111) surface on GaAs nanowire growth
- Year: 2022
- Volume: 15
- Issue: 3.3
- 16
- 5683
- Pages: 36-41
Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures
- Year: 2022
- Volume: 15
- Issue: 3.3
- 26
- 5960
- Pages: 31-35
Influence of the initial surface state on the ripple formation induced by O2+ sputtering of Si
- Year: 2022
- Volume: 15
- Issue: 3.3
- 32
- 6218
- Pages: 8-12
Silicon nanoantenna for controlling the polarization direction of radiation from standalone quantum light source
- Year: 2022
- Volume: 15
- Issue: 3.2
- 8
- 5489
- Pages: 235-239
Study of recombination and transport properties of a-Si:H(i)/ μc-Si:H(n) contact system for crystalline silicon solar cells
- Year: 2022
- Volume: 15
- Issue: 3.2
- 17
- 5677
- Pages: 150-154
Dependence of light-addressable potentiometric sensor sensitivity on photo-induced processes in Si
- Year: 2022
- Volume: 15
- Issue: 3.2
- 19
- 5304
- Pages: 135-139
Study of quasi 1-D silicon nanostructures adsorption properties
- Year: 2022
- Volume: 15
- Issue: 3.2
- 57
- 5887
- Pages: 10-15
Сurrent-voltage characteristics and photoelectric properties of por-Si/Si-p/Si-n diodes with different porous layer thickness
- Year: 2022
- Volume: 15
- Issue: 3.1
- 18
- 6084
- Pages: 143-148
Influence of current density, anodization time, and illumination on the thickness of porous silicon in wafers with the built-in p–n junction and its photoluminescence
- Year: 2022
- Volume: 15
- Issue: 3.1
- 22
- 5677
- Pages: 137-142
Structures and electrical conductance at the initial stages of magnesium growth on Si(111)-Pb surface
- Year: 2022
- Volume: 15
- Issue: 3.1
- 12
- 6096
- Pages: 107-112
Morphology evolution of mesoporous silicon powder formed by Pd-assisted chemical etching at temperatures of 25 – 75 °C
- Year: 2022
- Volume: 15
- Issue: 3.1
- 12
- 5804
- Pages: 93-100
Giant lateral photovoltaic effect in the TiO2/SiO2/p-Si heterostructure
- Year: 2022
- Volume: 15
- Issue: 3.1
- 33
- 6750
- Pages: 32-37
Electronic structure and optical properties of Ca2Si films grown on silicon different oriented substrates and calculated from first principles
- Year: 2022
- Volume: 15
- Issue: 3.1
- 42
- 6327
- Pages: 16-21
Formation, structure, and optical properties of singlephase CaSi and CaSi2 films on Si substrates
- Year: 2022
- Volume: 15
- Issue: 3.1
- 84
- 6635
- Pages: 9-15
Optical-electric phase characteristics of silicon negative-U nanosandwiches
- Year: 2021
- Volume: 14
- Issue: 4
- 79
- 6907
- Pages: 9-20
Contribution of internal ionization processes in semiconductors to radiative losses of relativistic electrons
- Year: 2020
- Volume: 13
- Issue: 3
- 45
- 9126
- Pages: 7-14
The efficiency of solar energy conversion by the CdS/por-Si/p-Si heterostructure: the dopant effect
- Year: 2020
- Volume: 13
- Issue: 2
- 37
- 8990
- Pages: 17-26
The interaction processes of silicon tetrafluoride and hexafluorosilicates with hydrogen-containing and oxygenated substances: a thermodynamic analysis
- Year: 2020
- Volume: 13
- Issue: 1
- 67
- 9808
- Pages: 92-105
Diffusion-reaction model of the interaction of sili- cide-forming metal with the silicon carbide
- Year: 2009
- Issue: 1
- 0
- 9243
- Pages: 64-71
Properties of the semiconductor structure with a p–n-junction created in a porous silicon film under laser radiation
- Year: 2018
- Volume: 11
- Issue: 1
- 31
- 10043
- Pages: 18-25
Electron and positron propagation in straight and periodically bent axial and planar silicon channels
- Year: 2015
- Issue: 3
- 360
- 9751
- Pages: 173-184
The features of the silicon gamma-ray detector amplitude spectra
- Year: 2013
- Issue: 3
- 712
- 10226
- Pages: 99-105
A formation method of amorphous and crystalline silicon nanoclusters in dielectric films
- Year: 2010
- Issue: 1
- 0
- 9066
- Pages: 66-71
Mechanical stresses in gallium nitride films grown on substrates with a mask
- Year: 2011
- Issue: 3
- 1
- 9412
- Pages: 14-16
Simulation of sputtering of the silicon carbide surface under bombardment by ions and clusters
- Year: 2011
- Issue: 2
- 0
- 9149
- Pages: 67-74
The Frenkel pairs formation in the silicon under high energy electron and proton irradiation
- Year: 2011
- Issue: 2
- 0
- 9818
- Pages: 13-21
The blood vessel models: the technology development for makingand following investigation
- Year: 2012
- Issue: 3
- 0
- 9296
- Pages: 75-79
The features of defect formation in silicon under molecular ion bombardment
- Year: 2012
- Issue: 3
- 0
- 9767
- Pages: 64-70
An estimation of plasma radiation losses in the Globus-M tokamak using silicon SPD photodiodes
- Year: 2012
- Issue: 4
- 0
- 9293
- Pages: 70-74
Growing and photoluminescence investigation of silicon-germanium structures doped with erbium on sapphire substrates
- Year: 2013
- Issue: 1
- 559
- 9916
- Pages: 24-28
Improvement and stabilization of optical characteristics of the porous silicon
- Year: 2013
- Issue: 2
- 660
- 10142
- Pages: 130-136