Articles by keywords "quantum"

Hong–Ou–Mandel interference on free charged particles

Physical optics
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 3
  • 246
  • Pages: 233-236

Formation of site-controlled InAs quantum dots on nanopatterned GaAs(111)B surfaces

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 5
  • 278
  • Pages: 115-118

Injection edge-emitting microlasers with InGaAs/GaAs quantum dot active region

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 4
  • 220
  • Pages: 29-32

Optical studies of InGaAs/GaAs quantum well mesa structures passivated with sol-gel SiO2

Physical optics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 3
  • 251
  • Pages: 237-241

Optical properties of disk microresonators based on wide-bandgap III-N materials

Physical optics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 3
  • 256
  • Pages: 209-213

MBE growth of wurtzite AlGaAs nanowires with zinc-blende insertions

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 3
  • 301
  • Pages: 148-151

Growth of GaN nanowires with InN inserts by PA-MBE

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 2
  • 254
  • Pages: 139-142

Investigation of microdisks lasers with an InGaN/GaN quantum well in the active region at elevated temperatures

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 8
  • 376
  • Pages: 125-128

Infrared photodetectors based on InAsP epitaxial nanowires on silicon

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 2
  • 40
  • 3860
  • Pages: 9-21

Effect of illumination on positive magnetoresistance of high-mobility two-dimensional electron gas in GaAs/AlAs heterostructure

Heterostructures, superlattices, quantum wells
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 11
  • 3543
  • Pages: 67-71

Magnetic field effect on interface states in ZnSe/BeTe quantum well structures with no common atom

Heterostructures, superlattices, quantum wells
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 8
  • 3613
  • Pages: 52-57

A method for measuring the direction of the geomagnetic field to correct of the onboard rubidium atomic clock frequency using an Mz-magnetometer

Experimental technique and devices
  • Year: 2025
  • Volume: 18
  • Issue: 1
  • 24
  • 3997
  • Pages: 94-102

Fluorescent properties of boron nitride quantum dots depending on functionalizing ligands

Biophysics and medical physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 21
  • 2369
  • Pages: 297-300

Security of BB84-like protocol on coherent states with different intensities

Physical optics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 9
  • 2377
  • Pages: 230-235

Mode leakage into substrate in microdisk lasers

Physical optics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 18
  • 2444
  • Pages: 212-216

Modeling the dynamics and properties of the squeezed state of light in a phase modulator

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 10
  • 2616
  • Pages: 125-129

Numerical optimization of semiconductor waveguide structure

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 12
  • 2381
  • Pages: 98-102

Optimization of mid-infrared quantum cascade detectors

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 11
  • 2462
  • Pages: 93-97

Polarization extinction ratio conversion due to pointing system impact in satellite quantum key distribution

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 17
  • 2655
  • Pages: 88-92

Temperature performance of ring quantum-cascade laser with staircase-like distributed feedback grating

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 19
  • 2483
  • Pages: 71-77

Quantum state preparation with optical injection: Issue of intersymbol interference

Experimental technique and devices
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 8
  • 2738
  • Pages: 173-177

Heterostructure design features for 975 nm high-power laser diodes

Atom physics and physics of clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 6
  • 2505
  • Pages: 129-133

Ab initio study of In adsorption on AlxGa1–xAs substrates at the first stages of droplet epitaxy

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 14
  • 2973
  • Pages: 100-104

Study of the photoluminescence properties of subcritical InAs/GaAs quantum dots formed onto structured substrates

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 18
  • 2736
  • Pages: 79-83

Quantum dots formation by InGaAs decomposition onto a patterned GaAs surface

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 13
  • 2738
  • Pages: 38-42

The electronic structure of gallium oxide nanocrystals doped with shallow donors

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 38
  • 3097
  • Pages: 7-16

Photoinduced light absorption in Ge/Si quantum dots

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 43
  • 3820
  • Pages: 105-112

Luminescence in nanostructures with compensated quantum wells under optical and electrical pumping

Heterostructures, superlattices, quantum wells
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 27
  • 3770
  • Pages: 68-76

Excess leakage of information in quantum key distribution with passive side channels

Theoretical physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 17
  • 3786
  • Pages: 439-442

Improvement of the thermoregulator of the quantum frequency standard on rubidium-87 atoms

Radiophysics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 6
  • 3990
  • Pages: 394-399

Experimental evaluation of imperfections of quantum states for time-bin encoding

Mathematical physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 24
  • 3751
  • Pages: 366-371

Determination of the isoelectric point of the antibody to SARS-CoV-2 by molecular modeling for conjugation with quantum dots

Physics of molecules
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 12
  • 4309
  • Pages: 360-365

Coating of hydrophilic chalcogenide quantum dots with carboxymethyl chitosan for lateral flow immunoassay applications

Biophysics and medical physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 7
  • 3908
  • Pages: 312-317

Quantum dot-induced photoluminescence enhancement of InGaN nanowires

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 13
  • 4100
  • Pages: 255-260

Phosphine-free synthesis of selenide colloidal quantum dots

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 21
  • 4237
  • Pages: 125-129

Real-time calibration methods for a commercial MDI-QKD system

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 23
  • 3897
  • Pages: 97-102

Influence of quantum states imperfections on the error rate in measurement-device-independent quantum key distribution

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 25
  • 3932
  • Pages: 69-74

Influence of detector dead time on the key generation rate in measurement-device-independent quantum key distribution

Experimental technique and devices
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 29
  • 4193
  • Pages: 374-348

Luminescence kinetic of CsPbBr3 quantum dots

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 34
  • 4062
  • Pages: 321-324

Passive optical scheme for BB84 protocol with polarization encoding on a silicon nitride platform

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 30
  • 4346
  • Pages: 284-288

Localization microscopy of single photon emitters in locally strained monolayer semiconductor

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 21
  • 3755
  • Pages: 273-277

Evaluation of quantum efficiency of InGaAs/InP single-photon detectors in quantum key distribution systems

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 21
  • 4069
  • Pages: 237-241

Detection-efficiency mismatch in a satellite-to-ground quantum communication

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 25
  • 4359
  • Pages: 216-220

Formation features of motion trajectory of mercury-199 ions in the quantum frequency standard for space applications

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 5
  • 4645
  • Pages: 198-203

Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 18
  • 4001
  • Pages: 64-68

Temperature dependence of the energy spectrum of metamorphic InSb/In(Ga,Al)As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 31
  • 4252
  • Pages: 47-52

Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 28
  • 4625
  • Pages: 170-175

Multi-state lasing in microdisk lasers with InAs/GaAs quantum dots

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 26
  • 4436
  • Pages: 157-162

Polarimetry of waveguiding heterostructures with quantum well-dots

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 12
  • 4308
  • Pages: 140-145

Electrically controlled switching between spatially separated conducting channels in a quantum point contact

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 29
  • 4592
  • Pages: 117-123

Suppression of molecular anyon states in the magneto-photoluminescence spectra of InP/GaInP2 quantum dots at a temperature of 30 K

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 17
  • 4398
  • Pages: 112-116

Modeling of coherent dynamics of excitons in a GaAs quantum well in the pump-probe experiment

Heterostructures, superlattices, quantum wells
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 21
  • 4283
  • Pages: 79-84

Investigation of infrared photoresponse from structure with GeSiSn/Si multiple quantum wells

Heterostructures, superlattices, quantum wells
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 24
  • 4248
  • Pages: 73-78

Transformation kinetics of a two-dimensional GaN thin layer grown on AlN surface during ammonia flow cycling

Structure growth, surface, and interfaces
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 21
  • 4383
  • Pages: 62-66

Microring lasers with a waveguide coupler

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 57
  • 4905
  • Pages: 126-132

Thermal characteristics of III-V microlasers bonded onto silicon board

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 33
  • 4681
  • Pages: 108-113

Change of radiative and low-frequency noise characteristics of UV LEDs based on InGaN/GaN quantum wells at liquid nitrogen temperature

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 13
  • 4386
  • Pages: 96-102

Dominant recombination in a GaAs solar cell through a compressed GaAs/In0.4Ga0.6As/GaAs quantum well

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 31
  • 4893
  • Pages: 77-82

Mechanisms leading to thermal quantum efficiency droop in green InGaN/GaN LEDs

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 32
  • 4882
  • Pages: 70-76

1550 nm high-speed VCSELS based on compressively strained In(Al)GaAs QWs

Experimental technique and devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 48
  • 4906
  • Pages: 456-462

Influence of GaP compensating layers on the characteristics of GaAs photovoltaic converters with InGaAs quantum dot arrays

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 18
  • 4476
  • Pages: 411-415

Thermally induced depolarization of fluorescence of matrix-isolated MoS2 nanodots

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 7
  • 4496
  • Pages: 356-362

Numerical simulation of waveguide couplers using the coupled mode theory for quantum gates implementation

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 27
  • 4970
  • Pages: 320-325

Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 25
  • 4585
  • Pages: 153-157

Photoluminescence and energy transfer between CdTe/CdMnTe quantum wells separated by thick barriers

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 39
  • 5002
  • Pages: 49-53

Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 32
  • 4954
  • Pages: 22-27

Near-infrared photoluminescence in n-GaAs/AlGaAs quantum wells with different locations of compensating acceptor impurity

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 4
  • 86
  • 5763
  • Pages: 32-43

Integrated optical transceiver based on III-V microdisk laser and photodiode

Experimental technique and devices
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 27
  • 5081
  • Pages: 371-375

Phase-time-encoding MDI QKD tolerant to detector imperfections

Theoretical physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 29
  • 5040
  • Pages: 365-370

Dynamics of the uncertainty value of quadratures for bosonic quantum states

Theoretical physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 13
  • 5074
  • Pages: 360-364

Features of microwave excitation signal formation in a quantum frequency standard

Radiophysics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 21
  • 4907
  • Pages: 354-359

Measurement of the internal quantum efficiency of emission in the local region of the LED chip

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 18
  • 5261
  • Pages: 226-229

Polarization compensation design for free-space quantum communication transmitter

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 35
  • 5071
  • Pages: 202-206

Novel method for preparing high-indistinguishable coherent states

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 17
  • 5096
  • Pages: 198-201

The investigation of optical coupling of microlasers with tapered fiber

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 26
  • 5684
  • Pages: 167-170

Analysis of characteristics of InGaAs/GaAs microdisk lasers bonded onto silicon board

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 31
  • 5066
  • Pages: 163-166

A comprehensive study of electroluminescence and temperature distribution of “UX:3” AlInGaN LED

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 15
  • 5216
  • Pages: 142-146

Investigation of the optical properties of quantum dots depending on the nature and number of additional semiconductor layers

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 14
  • 5001
  • Pages: 106-110

Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 17
  • 5071
  • Pages: 48-53

Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 12
  • 5410
  • Pages: 42-47

Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 26
  • 5474
  • Pages: 31-35

Improvement of the characteristics of the frequency synthesizer in the quantum frequency standard on caesium-133 atoms

Radiophysics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 13
  • 4973
  • Pages: 412-418

Study of quantum dots conjugation with antibodies to be used in a lateral flow immunochromatographic assay

Physics of molecules
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 44
  • 5122
  • Pages: 331-335

Silicon nanoantenna for controlling the polarization direction of radiation from standalone quantum light source

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 8
  • 5068
  • Pages: 235-239

Gain-switched VCSEL as a quantum entropy source: the problem of quantum and classical noise

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 37
  • 5401
  • Pages: 201-205

Förster resonance energy transfer from colloidal quantum dots to xanthene dye in polymer film

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 14
  • 5404
  • Pages: 80-85

Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 32
  • 5204
  • Pages: 75-79

QKD and phase modulator imperfections

Simulation of physical processes
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 22
  • 5229
  • Pages: 65-68

Influence of polarization reference frame rotation on groundreceiver error rate in satellite quantum key distribution

Simulation of physical processes
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 51
  • 5931
  • Pages: 61-64

Synchronization protocol for MDI-QKD systems

Simulation of physical processes
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 40
  • 5257
  • Pages: 56-60

Investigation of far-field patterns of semiconductor microlasers with an active region based on InGaAs/GaAs quantum well-dots

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 61
  • 6524
  • Pages: 25-30

An exciton in the superstrong and hyperstrong magnetic fields

Condensed matter physics
  • Year: 2020
  • Volume: 13
  • Issue: 4
  • 47
  • 8483
  • Pages: 9-27

Asymptotic effects in dijet production in proton-proton collisions at extremely high energies

Nuclear physics
  • Year: 2019
  • Volume: 12
  • Issue: 2
  • 51
  • 8509
  • Pages: 121-129

Effect of gamma radiation on luminescence and photoconductivity of MEH-PPV – lead sulfide nanocomposite

Condensed matter physics
  • Year: 2018
  • Volume: 11
  • Issue: 4
  • 25
  • 9455
  • Pages: 35-46

The photomagnetic effect in heteronanostructures based on gallium arsenide with qantum well and delta-layered with manganese

Atom physics and physics of clusters and nanostructures
  • Year: 2010
  • Issue: 4
  • 0
  • 9376
  • Pages: 7-11

Excitonic photolumenescence kinetics of GaAs/AlGaAs structures with shallow quantum wells at low temperatures

Atom physics and physics of clusters and nanostructures
  • Year: 2010
  • Issue: 3
  • 0
  • 8894
  • Pages: 58-62

Exitons condensation in quasi-2D SiGe layers - Si/Si1-xGex/Si heterostructures

Condensed matter physics
  • Year: 2010
  • Issue: 3
  • 0
  • 9277
  • Pages: 7-13

Small hydrogen-like centers and excitons in structures with single quantum wells

Atom physics and physics of clusters and nanostructures
  • Year: 2009
  • Issue: 3
  • 0
  • 8881
  • Pages: 62-66

Lattice node representation in quantum dots theory

Atom physics and physics of clusters and nanostructures
  • Year: 2009
  • Issue: 3
  • 0
  • 8554
  • Pages: 56-62

Gamma-induced effect on the luminescence of nanocomposites of MEH-PPV conductive polymer with lead sulphide quantum dots

Condensed matter physics
  • Year: 2018
  • Volume: 11
  • Issue: 2
  • 26
  • 9302
  • Pages: 41-48

Quantization of the energy density in a closed universe

Theoretical physics
  • Year: 2018
  • Volume: 11
  • Issue: 1
  • 32
  • 8769
  • Pages: 147-156

Formation of quantum vortices upon atom ionization by a pulse of electromagnetic waves

Theoretical physics
  • Year: 2017
  • Volume: 10
  • Issue: 4
  • 211
  • 9897
  • Pages: 111-123

Visible quantum cutting in green emitting BaF2: Gd3+, Tb3+ phosphors: an approach towards mercury-free lamps

Physical materials technology
  • Year: 2017
  • Volume: 10
  • Issue: 3
  • 93
  • 9804
  • Pages: 64-74

On the initial state of the universe in the theory of inflation

Theoretical physics
  • Year: 2017
  • Volume: 10
  • Issue: 2
  • 94
  • 9399
  • Pages: 115-122

A regularization of the Hartle-Hawking wave function

Theoretical physics
  • Year: 2017
  • Volume: 10
  • Issue: 2
  • 57
  • 9284
  • Pages: 110-114

Auger-recombination effect on the nonequilibrium charge carriers concentration in InGaAsSb /AlGaAsSb quantum wells

Atom physics and physics of clusters and nanostructures
  • Year: 2016
  • Issue: 4
  • 116
  • 9244
  • Pages: 66-76

Impurity assisted terahertz luminescence in quantum well nanostructures under interband photoexсitation

Atom physics and physics of clusters and nanostructures
  • Year: 2016
  • Issue: 4
  • 88
  • 9125
  • Pages: 56-65

The formation of the angular dependences of the inelastically scattered electrons by their quantum transport near the surface of a solid

Physical electronics
  • Year: 2016
  • Issue: 2
  • 204
  • 9130
  • Pages: 65-71

Colloidal CdSe and ZnSe/Mn quantum dots: their cytotoxicity and effect on cell morphology

Biophysics and medical physics
  • Year: 2015
  • Issue: 3
  • 2461
  • 12549
  • Pages: 86-95

On the Universe initial state in quantum cosmology

Theoretical physics
  • Year: 2015
  • Issue: 2
  • 8
  • 8402
  • Pages: 160-166

Structural features of indium antimonide quantum dots on the indium arsenide substrate

Condensed matter physics
  • Year: 2015
  • Issue: 2
  • 365
  • 9675
  • Pages: 11-18

The external quantum yield of photoresponce of tandem solar cells

Condensed matter physics
  • Year: 2009
  • Issue: 2
  • 0
  • 9145
  • Pages: 14-23

The influence of temperature and electric field on emission of carriers out of the InAs/CaAs quantum dots

Condensed matter physics
  • Year: 2009
  • Issue: 2
  • 0
  • 8580
  • Pages: 11-14

Near- and far-infrared emission from GaAs/AlGaAs quantum wells under interband optical excitation

Condensed matter physics
  • Year: 2013
  • Issue: 4
  • 429
  • 9612
  • Pages: 109-114

The states density simulation in 2D-system of charged impurities

Condensed matter physics
  • Year: 2010
  • Issue: 2
  • 0
  • 8779
  • Pages: 23-27

Photoinduced absorption in structures with Се/Si quantum dots

Atom physics and physics of clusters and nanostructures
  • Year: 2011
  • Issue: 3
  • 0
  • 9118
  • Pages: 46-50

The Shubnikov - de Haas and the de Haas - van Alphen effects in bulk crystals and low-dimension structures

Condensed matter physics
  • Year: 2011
  • Issue: 4
  • 0
  • 9123
  • Pages: 7-16

New problems in quantum mechanics and the Heun equation

Theoretical physics
  • Year: 2012
  • Issue: 1
  • 0
  • 8789
  • Pages: 137-145

A comparison of macroscopic and microscopic methods of calculation of dielectric permittivity of dense ultracold atomic clouds

Atom physics and physics of clusters and nanostructures
  • Year: 2012
  • Issue: 2
  • 0
  • 9223
  • Pages: 73-79

Quantum Duffing oscillators: free and coupled, noise action

Theoretical physics
  • Year: 2012
  • Issue: 3
  • 0
  • 8790
  • Pages: 171-181

Development features of degradation processes in high-power blue InGaN/GaN light-emitting diodes

Experimental technique and devices
  • Year: 2012
  • Issue: 3
  • 0
  • 8903
  • Pages: 45-48

Electron recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells

Condensed matter physics
  • Year: 2012
  • Issue: 3
  • 0
  • 9124
  • Pages: 9-15

Optical absorption in Ge/Si quantum dots at different population densities of the dots states

Condensed matter physics
  • Year: 2012
  • Issue: 4
  • 0
  • 9382
  • Pages: 9-15

Improvement and stabilization of optical characteristics of the porous silicon

Physical materials technology
  • Year: 2013
  • Issue: 2
  • 660
  • 9783
  • Pages: 130-136