Articles by keywords "GaN"

Electric and thermoelectric properties of a coordination polymer based on phenazine ligands and silver

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 2
  • 13
  • 771
  • Pages: 68-77

Formation of ohmic contacts to n-AlxGa1-xN:Si layers with a high aluminum content

Novel materials
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 8
  • 568
  • Pages: 182-187

Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 6
  • 687
  • Pages: 170-175

Peculiarities of low frequency noise and non-radiative recombination in AlGaN QWs emitting at 280 nm

Heterostructures, superlattices, quantum wells
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 8
  • 588
  • Pages: 85-89

Transformation kinetics of a two-dimensional GaN thin layer grown on AlN surface during ammonia flow cycling

Structure growth, surface, and interfaces
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 8
  • 616
  • Pages: 62-66

Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 9
  • 702
  • Pages: 33-38

Synthesis of semi-polar GaN(11-22) on a nano-patterned Si(113) substrate

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 4
  • 605
  • Pages: 224-228

Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 19
  • 711
  • Pages: 179-184

In situ conductance studies of electrochemically doped polymer thin films based on nickel-salen complexes

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 6
  • 744
  • Pages: 90-95

Mechanisms leading to thermal quantum efficiency droop in green InGaN/GaN LEDs

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 6
  • 767
  • Pages: 70-76

2DEG-based multilayer AlGaN/GaN heterostructures with lowered sheet resistance

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 11
  • 632
  • Pages: 380-384

Conductivity in nanostructured films of paramagnetic manganese phthalocyanine

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 3
  • 711
  • Pages: 346-350

Working process calculation of the control circuit for pulsed operation regime of the MPD accelerator

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 4
  • 733
  • Pages: 301-308

Self-organization of the structure of porous silicon carbide under external influences

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 2
  • 695
  • Pages: 79-83

Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 17
  • 1161
  • Pages: 311-314

Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 17
  • 1195
  • Pages: 281-284

Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 13
  • 1216
  • Pages: 157-162

GaN IC E-mode p-channel and n-channel transistors simulation

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 11
  • 1146
  • Pages: 134-137

Optimization of InGaN-based luminescent heterostructures by genetic algorithm

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 14
  • 1395
  • Pages: 21-24

Structured biomolecular films for microelectronics

Atom physics and physics of clusters and nanostructures
  • Year: 2021
  • Volume: 14
  • Issue: 1
  • 25
  • 3330
  • Pages: 85-99

Nanostructed carbon and organic films: spectral microwave and optical characteristics

Physical materials technology
  • Year: 2020
  • Volume: 13
  • Issue: 1
  • 64
  • 4693
  • Pages: 106-117

Dehydrated films of protein solutions: structural properties

Condensed matter physics
  • Year: 2019
  • Volume: 12
  • Issue: 4
  • 26
  • 4484
  • Pages: 25-37

The phase separation phenomenological model: Manganite as an example

Condensed matter physics
  • Year: 2018
  • Volume: 11
  • Issue: 3
  • 19
  • 5556
  • Pages: 17-26

A subject for pattern to investigate triplet excitons

Condensed matter physics
  • Year: 2010
  • Issue: 4
  • 0
  • 5585
  • Pages: 53-63

The photomagnetic effect in heteronanostructures based on gallium arsenide with qantum well and delta-layered with manganese

Atom physics and physics of clusters and nanostructures
  • Year: 2010
  • Issue: 4
  • 0
  • 5613
  • Pages: 7-11

AlGaN/GaN heterojunction quality monitoring with large-area heterostructure field-effect transistor

Condensed matter physics
  • Year: 2009
  • Issue: 1
  • 0
  • 5180
  • Pages: 43-48

Visible quantum cutting in green emitting BaF2: Gd3+, Tb3+ phosphors: an approach towards mercury-free lamps

Physical materials technology
  • Year: 2017
  • Volume: 10
  • Issue: 3
  • 87
  • 5541
  • Pages: 64-74

An effect of optical radiation on charge and magnetic states of the iron ions in the sillenites

Condensed matter physics
  • Year: 2016
  • Issue: 4
  • 179
  • 4993
  • Pages: 22-32

Temperature evolution of lanthanum-strontium manganites magnetic properties

Condensed matter physics
  • Year: 2016
  • Issue: 3
  • 117
  • 5195
  • Pages: 15-22

Kohonen self-organizing map application to representative sample formation in the training of the multilayer perceptron

Mathematics
  • Year: 2016
  • Issue: 2
  • 375
  • 5665
  • Pages: 95-107

The composition and the structure of thin films based on metal porphyrin complexes

Condensed matter physics
  • Year: 2016
  • Issue: 2
  • 133
  • 5010
  • Pages: 9-18

Composite C60CdS thin films for photoelectronics

Condensed matter physics
  • Year: 2009
  • Issue: 2
  • 0
  • 5074
  • Pages: 23-29

Self-organization of radiation defects in inorganic dielectrics

Condensed matter physics
  • Year: 2009
  • Issue: 2
  • 0
  • 5030
  • Pages: 7-10

Molecular dynamic simulation of damage formation in GaN under atomic and molecular ion bombardment

Condensed matter physics
  • Year: 2012
  • Issue: 2
  • 0
  • 5194
  • Pages: 49-55

The rectifying properties of C60 fullerene-based structures

Condensed matter physics
  • Year: 2012
  • Issue: 2
  • 0
  • 5322
  • Pages: 18-21

Development features of degradation processes in high-power blue InGaN/GaN light-emitting diodes

Experimental technique and devices
  • Year: 2012
  • Issue: 3
  • 0
  • 5153
  • Pages: 45-48

Ultraviolet photodiodes on the basis of the contactsof metal and aluminum-nitride gallium solid solutions

Condensed matter physics
  • Year: 2012
  • Issue: 3
  • 0
  • 5513
  • Pages: 28-31

The growth of gallium nitride layers with low dislocation density

Condensed matter physics
  • Year: 2012
  • Issue: 4
  • 0
  • 4967
  • Pages: 28-31

Using atomic-force microscopy techniques for an analysis of ferroelectric and magnetic properties of bismuth-doped terbium manganite at low temperatures

Physical materials technology
  • Year: 2013
  • Issue: 2
  • 713
  • 6476
  • Pages: 137-143

Degradation phenomena and the problem of semiconductor light emitting sources reliability

Experimental technique and devices
  • Year: 2013
  • Issue: 2
  • 5
  • 4856
  • Pages: 71-80