Articles by keywords "GaN"

Current – voltage characteristics of MaPbI3 perovskite films formed by the single-stage spin-coat method

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 4
  • 15
  • 720
  • Pages: 9-19

Quantum dot-induced photoluminescence enhancement of InGaN nanowires

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 3
  • 482
  • Pages: 255-260

Study of morphology and composition of nanoscale AlGaN heterostructures obtained by PA MBE technique on the silicon substrates with the use of porous silicon as buffer layer

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 4
  • 432
  • Pages: 249-254

Structural surface characteristics of aluminum-gallium nitride films on silicon carbide nanolayers on silicon

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 5
  • 462
  • Pages: 223-227

A facile low-temperature approach for organics removal from SiO2-CTAB mesoporous particles

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 0
  • 481
  • Pages: 183-187

On the wetting of polyethylene terephthalate substrates with multicomponent graphene oxide dispersions

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 1
  • 574
  • Pages: 177-182

Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 4
  • 482
  • Pages: 50-55

Simulation and analysis of heterostructures for normally-off p-channel GaN transistor

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 10
  • 528
  • Pages: 449-453

The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 3
  • 473
  • Pages: 439-443

Photocatalytic properties of NiO – gold plasmonic nanocomposite

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 13
  • 500
  • Pages: 310-315

Light-emitting and light-detecting perovskite electrochemical cell on silicon

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 2
  • 592
  • Pages: 94-99

Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 6
  • 544
  • Pages: 64-68

Crystallization of robotic swarms in a parabolic potential

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 13
  • 611
  • Pages: 36-40

Electric and thermoelectric properties of a coordination polymer based on phenazine ligands and silver

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 2
  • 21
  • 1328
  • Pages: 68-77

Formation of ohmic contacts to n-AlxGa1-xN:Si layers with a high aluminum content

Novel materials
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 13
  • 1030
  • Pages: 182-187

Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 21
  • 1366
  • Pages: 170-175

Peculiarities of low frequency noise and non-radiative recombination in AlGaN QWs emitting at 280 nm

Heterostructures, superlattices, quantum wells
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 12
  • 1045
  • Pages: 85-89

Transformation kinetics of a two-dimensional GaN thin layer grown on AlN surface during ammonia flow cycling

Structure growth, surface, and interfaces
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 14
  • 1160
  • Pages: 62-66

Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 17
  • 1205
  • Pages: 33-38

Synthesis of semi-polar GaN(11-22) on a nano-patterned Si(113) substrate

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 5
  • 1079
  • Pages: 224-228

Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 34
  • 1305
  • Pages: 179-184

In situ conductance studies of electrochemically doped polymer thin films based on nickel-salen complexes

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 10
  • 1478
  • Pages: 90-95

Mechanisms leading to thermal quantum efficiency droop in green InGaN/GaN LEDs

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 17
  • 1312
  • Pages: 70-76

2DEG-based multilayer AlGaN/GaN heterostructures with lowered sheet resistance

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 13
  • 1109
  • Pages: 380-384

Conductivity in nanostructured films of paramagnetic manganese phthalocyanine

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 4
  • 1217
  • Pages: 346-350

Working process calculation of the control circuit for pulsed operation regime of the MPD accelerator

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 5
  • 1258
  • Pages: 301-308

Self-organization of the structure of porous silicon carbide under external influences

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 5
  • 1192
  • Pages: 79-83

Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 20
  • 1638
  • Pages: 311-314

Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 21
  • 1682
  • Pages: 281-284

Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 14
  • 1705
  • Pages: 157-162

GaN IC E-mode p-channel and n-channel transistors simulation

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 12
  • 1617
  • Pages: 134-137

Optimization of InGaN-based luminescent heterostructures by genetic algorithm

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 17
  • 1880
  • Pages: 21-24

Structured biomolecular films for microelectronics

Atom physics and physics of clusters and nanostructures
  • Year: 2021
  • Volume: 14
  • Issue: 1
  • 28
  • 3867
  • Pages: 85-99

Nanostructed carbon and organic films: spectral microwave and optical characteristics

Physical materials technology
  • Year: 2020
  • Volume: 13
  • Issue: 1
  • 64
  • 5186
  • Pages: 106-117

Dehydrated films of protein solutions: structural properties

Condensed matter physics
  • Year: 2019
  • Volume: 12
  • Issue: 4
  • 26
  • 4963
  • Pages: 25-37

The phase separation phenomenological model: Manganite as an example

Condensed matter physics
  • Year: 2018
  • Volume: 11
  • Issue: 3
  • 19
  • 5989
  • Pages: 17-26

A subject for pattern to investigate triplet excitons

Condensed matter physics
  • Year: 2010
  • Issue: 4
  • 0
  • 6038
  • Pages: 53-63

The photomagnetic effect in heteronanostructures based on gallium arsenide with qantum well and delta-layered with manganese

Atom physics and physics of clusters and nanostructures
  • Year: 2010
  • Issue: 4
  • 0
  • 6070
  • Pages: 7-11

AlGaN/GaN heterojunction quality monitoring with large-area heterostructure field-effect transistor

Condensed matter physics
  • Year: 2009
  • Issue: 1
  • 0
  • 5591
  • Pages: 43-48

Visible quantum cutting in green emitting BaF2: Gd3+, Tb3+ phosphors: an approach towards mercury-free lamps

Physical materials technology
  • Year: 2017
  • Volume: 10
  • Issue: 3
  • 89
  • 6067
  • Pages: 64-74

An effect of optical radiation on charge and magnetic states of the iron ions in the sillenites

Condensed matter physics
  • Year: 2016
  • Issue: 4
  • 179
  • 5450
  • Pages: 22-32

Temperature evolution of lanthanum-strontium manganites magnetic properties

Condensed matter physics
  • Year: 2016
  • Issue: 3
  • 117
  • 5675
  • Pages: 15-22

Kohonen self-organizing map application to representative sample formation in the training of the multilayer perceptron

Mathematics
  • Year: 2016
  • Issue: 2
  • 375
  • 6120
  • Pages: 95-107

The composition and the structure of thin films based on metal porphyrin complexes

Condensed matter physics
  • Year: 2016
  • Issue: 2
  • 133
  • 5468
  • Pages: 9-18

Composite C60CdS thin films for photoelectronics

Condensed matter physics
  • Year: 2009
  • Issue: 2
  • 0
  • 5561
  • Pages: 23-29

Self-organization of radiation defects in inorganic dielectrics

Condensed matter physics
  • Year: 2009
  • Issue: 2
  • 0
  • 5482
  • Pages: 7-10

Molecular dynamic simulation of damage formation in GaN under atomic and molecular ion bombardment

Condensed matter physics
  • Year: 2012
  • Issue: 2
  • 0
  • 5650
  • Pages: 49-55

The rectifying properties of C60 fullerene-based structures

Condensed matter physics
  • Year: 2012
  • Issue: 2
  • 0
  • 5771
  • Pages: 18-21

Development features of degradation processes in high-power blue InGaN/GaN light-emitting diodes

Experimental technique and devices
  • Year: 2012
  • Issue: 3
  • 0
  • 5609
  • Pages: 45-48

Ultraviolet photodiodes on the basis of the contactsof metal and aluminum-nitride gallium solid solutions

Condensed matter physics
  • Year: 2012
  • Issue: 3
  • 0
  • 5943
  • Pages: 28-31

The growth of gallium nitride layers with low dislocation density

Condensed matter physics
  • Year: 2012
  • Issue: 4
  • 0
  • 5407
  • Pages: 28-31

Using atomic-force microscopy techniques for an analysis of ferroelectric and magnetic properties of bismuth-doped terbium manganite at low temperatures

Physical materials technology
  • Year: 2013
  • Issue: 2
  • 713
  • 6991
  • Pages: 137-143

Degradation phenomena and the problem of semiconductor light emitting sources reliability

Experimental technique and devices
  • Year: 2013
  • Issue: 2
  • 5
  • 5323
  • Pages: 71-80