SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
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    Articles by keywords "GaN"

    Optimization of AlGaN/GaN heterostructures for high-electron mobility transistors

    Optoelectronic and nanoelectronic devices
    Arteev D.S.Sakharov A.V.Nikolaev A.E.Zavarin E.E.Rodin S.N.Tsatsulnikov A.F.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 1
    • 212
    • Pages: 129-133

    Formation of 2D laser-induced periodic surface structures on metal and phase change materials

    Physical optics
    Fedyaj V.E.Bronnikov K.A.Simanchuk A.E.Lazarenko P.I.Yakubov A.O.Zhizhchenko A.Yu.Kuchmizhak A.A.Dostovalov A.V.
    • Year: 2025
    • Volume: 18
    • Issue: 4.1
    • 5
    • 834
    • Pages: 111-116

    High-sensitivity and low-noise GaN-based ultraviolet photodetectors

    Physical optics
    Sinitskaya O.A.Shubina K.Yu.Mizerov A.M.Nikitina E.V.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 4
    • 700
    • Pages: 196-199

    Optical characterization and surface plasmon polariton mode simulation of GaN/InGaN nanowires on Ag/AlOx film for plasmonic nanolasers

    Physical materials technology
    Shugabaev T.Kharchenko A.A.Dautov A.M.Kusnetsov A.Lendyashova V.V.Kryzhanovskaya N.V.Reznik R.R.Gridchin V.O.Cirlin G.E.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 7
    • 818
    • Pages: 278-282

    Optical properties of disk microresonators based on wide-bandgap III-N materials

    Physical optics
    Komarov S.D.Vainilovich A.G.Feigin G.A.Sakharov A.V.Nikolaev A.E.Ivanov K.A.Moiseev E.I.Kryzhanovskaya N.V.Nikitina E.V.Tsatsulnikov A.F.Lutsenko E.V.Zhukov A.E.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 6
    • 815
    • Pages: 209-213

    Optical reflectance spectroscopy for barrier thickness measurement of AlGaN/GaN heterostructures: comparison with X-ray reflectometry

    Atom physics and physics of clusters and nanostructures
    Arteev D.S.Sakharov A.V.Nikolaev A.E.Zavarin E.E.Filimonov A.V.Tsatsulnikov A.F.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 9
    • 812
    • Pages: 143-147

    Growth of GaN nanowires with InN inserts by PA-MBE

    Atom physics and physics of clusters and nanostructures
    Gridchin V.O.Mintairov A.M.Shugabaev T.Axenov V.Yu.Vlasov A.S.Lendyashova V.V.Kotlyar K.P.Eliseev I.A.Khrebtov A.I.Reznik R.R.Davydov V.Yu.Cirlin G.E.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 5
    • 800
    • Pages: 139-142

    Investigation of microdisks lasers with an InGaN/GaN quantum well in the active region at elevated temperatures

    Atom physics and physics of clusters and nanostructures
    Masyutin D,A.Rudnev A.A.Moiseev E.I.Vainilovich A.G.Lutsenko E.V.Tsatsulnikov A.F.Sakharov A.V.Arteev D.S.Nikolaev A.E.Pivovarova A.A.Zavarin E.E.Il'inskaya N.D.Markov L.K.Smirnova I.P.Kryzhanovskaya N.V.Zhukov A.E.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 13
    • 968
    • Pages: 125-128

    Enhanced optical performance of FAPbBr3-MOF composite films

    Condensed matter physics
    Pozdniakov S.V.Matveeva E.D.Li S.Sandzhieva M.A.Makarov S.V.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 12
    • 860
    • Pages: 105-109

    Application of fractal methods for analyzing the microdeformation data of the Earth's crust

    Experimental technique and devices
    Lisovitsky A.S.Chupin V. A.Moskovchenko L.G.
    • Year: 2025
    • Volume: 18
    • Issue: 4
    • 13
    • 942
    • Pages: 101-113

    Study of resonator optical properties of perylene microcrystals

    Novel materials
    Smirnov K.A.Zhaboev E.I.Mitetelo N.V.Maydykovskiy A.I.Murzina T.V.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 19
    • 4173
    • Pages: 152-157

    Polarized Raman scattering in strained GaN nanowires

    Quantum wires, quantum dots, and other low-dimensional systems
    Sharov V.A.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 10
    • 3983
    • Pages: 83-87

    Vertical spin valve performance of NiFe/Co-PANI/NiFe system

    Experimental technique and devices
    Nemade K. R.Maheshwary P.B.
    • Year: 2024
    • Volume: 17
    • Issue: 4
    • 11
    • 4090
    • Pages: 106-113

    Threshold current of separate spectral components of the emission spectrum of InGaN LEDs

    Experimental technique and devices
    Frolov I.V.Radaev O.A.Sergeev V.A.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 12
    • 3074
    • Pages: 161-165

    Growth of long core-shell InGaN nanowires by plasma-assisted molecular beam epitaxy with gradually increasing substrate temperature

    Physics of molecules, clusters and nanostructures
    Gridchin V.O.Shugabaev T.Lendyashova V.V.Kotlyar K.P.Khrebtov A.I.Dragunova A.S.Kryzhanovskaya N.V.Reznik R.R.Cirlin G.E.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 17
    • 2790
    • Pages: 143-147

    Influence of the wet-chemical treatment on the optical and structural properties of core-shell InGaN nanowires

    Physical materials technology
    Shugabaev T.Gridchin V.O.Kusnetsov A.Kulagina A.S.Khrebtov A.I.Lendyashova V.V.Reznik R.R.Cirlin G.E.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 18
    • 3475
    • Pages: 306-309

    GaN based ultraviolet narrowband photodetectors

    Physical optics
    Sinitskaya O.A.Shubina K.Yu.Mokhov D.V.Baranov A.I.Mizerov A.M.Nikitina E.V.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 23
    • 3304
    • Pages: 220-223

    Field plates design optimization to increase breakdown voltage of GaN HEMT

    Physical electronics
    Kozlovskaya E.A.Kurbanbaeva D.M.Tsarik K.A.Lashkov A.V.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 22
    • 3420
    • Pages: 204-209

    A microwave method for measuring the low-frequency noise of transistors

    Experimental technique and devices
    Usychenko V. G.Chernova A. S.
    • Year: 2024
    • Volume: 17
    • Issue: 2
    • 24
    • 4516
    • Pages: 61-70

    Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers

    Structure growth, surface, and interfaces
    Osinnykh I.V.Malin T.V.Milakhin D.S.Zhuravlev K.V.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 28
    • 4477
    • Pages: 43-48

    Current – voltage characteristics of MaPbI3 perovskite films formed by the single-stage spin-coat method

    Condensed matter physics
    Ovezov M.K.Ryabko A.A.Aleshin A.N.Moshnikov V.A.Kondratev V.M.Maximov A.I.
    • Year: 2023
    • Volume: 16
    • Issue: 4
    • 43
    • 5312
    • Pages: 9-19

    Quantum dot-induced photoluminescence enhancement of InGaN nanowires

    Physical materials technology
    Shugabaev T.Gridchin V.O.Reznik R.R.Khrebtov A.I.Melnichenko I.A.Kulagina A.S.Kotlyar K.P.Lendyashova V.V.Kryzhanovskaya N.V.Cirlin G.E.
    • Year: 2023
    • Volume: 16
    • Issue: 3.2
    • 13
    • 4645
    • Pages: 255-260

    Study of morphology and composition of nanoscale AlGaN heterostructures obtained by PA MBE technique on the silicon substrates with the use of porous silicon as buffer layer

    Physical materials technology
    Lenshin A.S.Zolotukhin D.S.Seredin P.V.Mizerov A.M.
    • Year: 2023
    • Volume: 16
    • Issue: 3.2
    • 17
    • 4547
    • Pages: 249-254

    Structural surface characteristics of aluminum-gallium nitride films on silicon carbide nanolayers on silicon

    Physical materials technology
    Grashchenko A.S.Kukushkin S.A.Sharofidinov Sh.
    • Year: 2023
    • Volume: 16
    • Issue: 3.2
    • 12
    • 4846
    • Pages: 223-227

    A facile low-temperature approach for organics removal from SiO2-CTAB mesoporous particles

    Physical materials technology
    Stovpiaga E.Yu.Grudinkin S.A.Eurov D.A.Kurdyukov D.A.
    • Year: 2023
    • Volume: 16
    • Issue: 3.2
    • 5
    • 4458
    • Pages: 183-187

    On the wetting of polyethylene terephthalate substrates with multicomponent graphene oxide dispersions

    Physical materials technology
    Komarov I.A.Danilov E.A.
    • Year: 2023
    • Volume: 16
    • Issue: 3.2
    • 8
    • 4939
    • Pages: 177-182

    Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening

    Physical optics
    Babichev A.V.Nadtochiy A.M.Tkach Yu.S.Kryzhanovskaya N.V.Blokhin S.A.Nevedomskiy V.N.Gladyshev A.G.Maleev N.A.Karachinsky L.Ya.Novikov I.I.
    • Year: 2023
    • Volume: 16
    • Issue: 3.2
    • 21
    • 5104
    • Pages: 50-55

    Simulation and analysis of heterostructures for normally-off p-channel GaN transistor

    Physical electronics
    Kozlovskaya E.A.Kurbanbaeva D.M.Tsarik K.A.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 33
    • 4641
    • Pages: 449-453

    The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

    Physical electronics
    Sinitskaya O.A.Shubina K.Yu.Mokhov D.V.Uvarov A.V.Mizerov A.M.Nikitina E.V.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 16
    • 4464
    • Pages: 439-443

    Photocatalytic properties of NiO – gold plasmonic nanocomposite

    Atom physics and physics of clusters and nanostructures
    Kondrateva A.S.Komarevtcev I.M.Enns Ya.B.Kazakin A.N.Pitirimova E.A.Studzinskii V.M.Mishin M.V.Karaseov P.A.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 22
    • 4589
    • Pages: 310-315

    Light-emitting and light-detecting perovskite electrochemical cell on silicon

    Condensed matter physics
    Baeva Maria Gets D.S.Polushkin A.S.Vorobyev A.A.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 13
    • 4579
    • Pages: 94-99

    Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates

    Condensed matter physics
    Chernenko N.E.Makhov I.S.Balakirev S.V.Kirichenko D.V.Shandyba N.A.Kryzhanovskaya N.V.Solodovnik M.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 20
    • 4551
    • Pages: 64-68

    Crystallization of robotic swarms in a parabolic potential

    Condensed matter physics
    Buzakov M.K.Smirnov V.A.Sennikova D.V.Molodtsova A.A.Rozenblit A.D.Porvatov V.A.Burmistrov O.I.Puhtina E.M.Dmitriev A.A.Olekhno N.A.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 27
    • 5187
    • Pages: 36-40

    Electric and thermoelectric properties of a coordination polymer based on phenazine ligands and silver

    Physical materials technology
    Tretyakov A.A.Kapralova V.M.Sapurina I.Yu.Sudar N.T.Shishov M.A.
    • Year: 2023
    • Volume: 16
    • Issue: 2
    • 35
    • 5906
    • Pages: 68-77

    Formation of ohmic contacts to n-AlxGa1-xN:Si layers with a high aluminum content

    Novel materials
    Semenov A.Nechaev D.Berezina D.Guseva Yu.A.Kulagina M.M.Smirnova I.P.Zadiranov Y. M.Troshkov S.Shmidt N.P.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 30
    • 4849
    • Pages: 182-187

    Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)

    Optoelectronic and nanoelectronic devices
    Ivanov A.E.Talnishnikh Nadezhda A.Chernyakov A.E.Zakgeim A.L.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 29
    • 5193
    • Pages: 170-175

    Peculiarities of low frequency noise and non-radiative recombination in AlGaN QWs emitting at 280 nm

    Heterostructures, superlattices, quantum wells
    Talnishnikh Nadezhda A.Ivanov A.E.Shabunina E.I.Shmidt N.P.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 18
    • 4906
    • Pages: 85-89

    Transformation kinetics of a two-dimensional GaN thin layer grown on AlN surface during ammonia flow cycling

    Structure growth, surface, and interfaces
    Maidebura Y.Malin T.V.Zhuravlev K.V.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 21
    • 4899
    • Pages: 62-66

    Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band

    Bulk properties of semiconductors
    Osinnykh I.V.Malin T.V.Zhuravlev K.V.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 24
    • 5276
    • Pages: 33-38

    Synthesis of semi-polar GaN(11-22) on a nano-patterned Si(113) substrate

    Physical materials technology
    Bessolov V.N.Konenkova E.V.Rodin S.N.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 15
    • 5207
    • Pages: 224-228

    Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

    Physical materials technology
    Bondarenko D.N.Gridchin V.O.Kotlyar K.P.Reznik R.R.Kirilenko D.A.Baranov A.I.Dragunova A.S.Kryzhanovskaya N.V.Maksimova A.A.Cirlin G.E.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 68
    • 5767
    • Pages: 179-184

    In situ conductance studies of electrochemically doped polymer thin films based on nickel-salen complexes

    Physical electronics
    Smirnova E.A.Chepurnaya I.A.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 22
    • 5411
    • Pages: 90-95

    Mechanisms leading to thermal quantum efficiency droop in green InGaN/GaN LEDs

    Physical electronics
    Shabunina E.I.Ivanov A.E.Talnishnikh Nadezhda A.Kartashova A.P.Poloskin D.S.Shmidt N.P.Zakgeim A.L.Chernyakov A.E.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 34
    • 5469
    • Pages: 70-76

    2DEG-based multilayer AlGaN/GaN heterostructures with lowered sheet resistance

    Atom physics and physics of clusters and nanostructures
    Arteev D.S.Sakharov A.V.Nikolaev A.E.Zavarin E.E.Tsatsulnikov A.F.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 32
    • 5000
    • Pages: 380-384

    Conductivity in nanostructured films of paramagnetic manganese phthalocyanine

    Atom physics and physics of clusters and nanostructures
    Sachkov Yu.I.Yunin P.A.Travkin V.V.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 11
    • 4930
    • Pages: 346-350

    Working process calculation of the control circuit for pulsed operation regime of the MPD accelerator

    Simulation of physical processes
    Tashayev Yu.N.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 7
    • 5338
    • Pages: 301-308

    Self-organization of the structure of porous silicon carbide under external influences

    Condensed matter physics
    Mynbaeva M.G.Lebedev S.P.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 13
    • 5217
    • Pages: 79-83

    Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates

    Physical materials technology
    Gridchin V.O.Reznik R.R.Kotlyar K.P.Shugabaev T.Dragunova A.S.Kryzhanovskaya N.V.Cirlin G.E.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 32
    • 5884
    • Pages: 311-314

    Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

    Physical materials technology
    Bondarenko D.N.Gridchin V.O.Kotlyar K.P.Baranov A.I.Maksimova A.A.Reznik R.R.Cirlin G.E.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 38
    • 5970
    • Pages: 281-284

    Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

    Physical optics
    Sinitskaya O.A.Shubina K.Yu.Mokhov D.V.Uvarov A.V.Filatov V.V.Mizerov A.M.Timoshnev S.N.Nikitina E.V.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 37
    • 5735
    • Pages: 157-162

    GaN IC E-mode p-channel and n-channel transistors simulation

    Physical electronics
    Egorkin V.I.Zemlyakov V.E.Zaitsev A.A.Chukanova O.B.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 27
    • 5643
    • Pages: 134-137

    Optimization of InGaN-based luminescent heterostructures by genetic algorithm

    Condensed matter physics
    Arteev D.S.Sakharov A.V.Nikolaev A.E.Zavarin E.E.Tsatsulnikov A.F.Ustinov V.M.
    • Year: 2022
    • Volume: 15
    • Issue: 3.2
    • 27
    • 5836
    • Pages: 21-24

    Structured biomolecular films for microelectronics

    Atom physics and physics of clusters and nanostructures
    Baranov M.A.Tsybin O.Yu.Velichko E.N.
    • Year: 2021
    • Volume: 14
    • Issue: 1
    • 33
    • 8466
    • Pages: 85-99

    Nanostructed carbon and organic films: spectral microwave and optical characteristics

    Physical materials technology
    Starostenko V.V.Mazinov A.S-A.Tyutyunik A.S.Fitaev I.Sh.Gurchenko V.S.
    • Year: 2020
    • Volume: 13
    • Issue: 1
    • 67
    • 9534
    • Pages: 106-117

    Dehydrated films of protein solutions: structural properties

    Condensed matter physics
    Baranov M.A.Velichko E.N.Rozov S.V.
    • Year: 2019
    • Volume: 12
    • Issue: 4
    • 29
    • 9439
    • Pages: 25-37

    The phase separation phenomenological model: Manganite as an example

    Condensed matter physics
    Shaposhnikova T. S.Mamin R. F.
    • Year: 2018
    • Volume: 11
    • Issue: 3
    • 19
    • 9984
    • Pages: 17-26

    A subject for pattern to investigate triplet excitons

    Condensed matter physics
    Yashchurginskaya O. А.
    • Year: 2010
    • Issue: 4
    • 0
    • 9653
    • Pages: 53-63

    The photomagnetic effect in heteronanostructures based on gallium arsenide with qantum well and delta-layered with manganese

    Atom physics and physics of clusters and nanostructures
    Hapugin O. E.Gorbachev E. A.
    • Year: 2010
    • Issue: 4
    • 0
    • 9880
    • Pages: 7-11

    AlGaN/GaN heterojunction quality monitoring with large-area heterostructure field-effect transistor

    Condensed matter physics
    Bereznyak A.F.
    • Year: 2009
    • Issue: 1
    • 0
    • 9067
    • Pages: 43-48

    Visible quantum cutting in green emitting BaF2: Gd3+, Tb3+ phosphors: an approach towards mercury-free lamps

    Physical materials technology
    Jaiswal S. R.Sawala N. S.Koparkar K. A.Nagpure P. A.Bhatkar V. B.Omanwar Shreeniwas K.
    • Year: 2017
    • Volume: 10
    • Issue: 3
    • 94
    • 10339
    • Pages: 64-74

    An effect of optical radiation on charge and magnetic states of the iron ions in the sillenites

    Condensed matter physics
    Kapralova V.M.Ilinskiy A.V.Castro R.A.Nabiullina L.A.Shadrin E.B.
    • Year: 2016
    • Issue: 4
    • 179
    • 9285
    • Pages: 22-32

    Temperature evolution of lanthanum-strontium manganites magnetic properties

    Condensed matter physics
    Vanina P. Y.Naberezhnov A.A.Nizhankovskii V.I.Mamin R. F.
    • Year: 2016
    • Issue: 3
    • 119
    • 9640
    • Pages: 15-22

    Kohonen self-organizing map application to representative sample formation in the training of the multilayer perceptron

    Mathematics
    Pastukhov A.A.Prokofiev A. A.
    • Year: 2016
    • Issue: 2
    • 380
    • 9879
    • Pages: 95-107

    The composition and the structure of thin films based on metal porphyrin complexes

    Condensed matter physics
    Romanov N. M.Zakharova I.B.
    • Year: 2016
    • Issue: 2
    • 137
    • 9261
    • Pages: 9-18

    Composite C60CdS thin films for photoelectronics

    Condensed matter physics
    Zakharova I.B.Suprun E.I.Ilyin V.I.
    • Year: 2009
    • Issue: 2
    • 1
    • 9517
    • Pages: 23-29

    Self-organization of radiation defects in inorganic dielectrics

    Condensed matter physics
    Vanina E.A.Rokosei V.A.Veselova E.M.
    • Year: 2009
    • Issue: 2
    • 0
    • 9234
    • Pages: 7-10

    Molecular dynamic simulation of damage formation in GaN under atomic and molecular ion bombardment

    Condensed matter physics
    Karaseov P.A.Titov A.I.Ullah M.-W.Djurabekova F.Kuronen A.Nordlund K.
    • Year: 2012
    • Issue: 2
    • 0
    • 9564
    • Pages: 49-55

    The rectifying properties of C60 fullerene-based structures

    Condensed matter physics
    Ziminov V.M.Zakharova I.B.
    • Year: 2012
    • Issue: 2
    • 0
    • 9668
    • Pages: 18-21

    Development features of degradation processes in high-power blue InGaN/GaN light-emitting diodes

    Experimental technique and devices
    Basalkevich T.M.Talnishnikh Nadezhda A.Shmidt N.P.
    • Year: 2012
    • Issue: 3
    • 0
    • 9409
    • Pages: 45-48

    Ultraviolet photodiodes on the basis of the contactsof metal and aluminum-nitride gallium solid solutions

    Condensed matter physics
    Lamkin I.A.Menkovich E.A.Tarasov S.A.
    • Year: 2012
    • Issue: 3
    • 0
    • 9770
    • Pages: 28-31

    The growth of gallium nitride layers with low dislocation density

    Condensed matter physics
    Mamaev V.V.Sidorov V.G.Petrov S.I.Alexeev A.N.
    • Year: 2012
    • Issue: 4
    • 1
    • 9237
    • Pages: 28-31

    Using atomic-force microscopy techniques for an analysis of ferroelectric and magnetic properties of bismuth-doped terbium manganite at low temperatures

    Physical materials technology
    Andreeva N.V.Sanina V.A.Filimonov A.V.Fotiadi A.E.
    • Year: 2013
    • Issue: 2
    • 715
    • 10901
    • Pages: 137-143

    Degradation phenomena and the problem of semiconductor light emitting sources reliability

    Experimental technique and devices
    Sidorov V.G.Shmidt N.P.
    • Year: 2013
    • Issue: 2
    • 8
    • 9097
    • Pages: 71-80