The rectifying properties of C60 fullerene-based structures

Condensed matter physics

The structure, composition and electrical properties of the films produced by the vacuum evaporation method from amixture of C60 with organic or inorganic donor semiconductor were investigated. Diode current-voltage characteristics with arectification ratio, depending on the composition and structure of the films were found. A comparative study of the compositestructures was carried out, conclusions about the prospects of using a mixture of inorganic semiconductor with a fullerene to make a bulk heterojunction-based diode with a high rectification ratio were done.