The rectifying properties of C60 fullerene-based structures

The structure, composition and electrical properties of the films produced by the vacuum evaporation method from amixture of C₆₀ with organic or inorganic donor semiconductor were investigated. Diode current-voltage characteristics with arectification ratio, depending on the composition and structure of the films were found. A comparative study of the compositestructures was carried out, conclusions about the prospects of using a mixture of inorganic semiconductor with a fullerene to make a bulk heterojunction-based diode with a high rectification ratio were done.