Articles by keywords "GaN"
Investigation of microdisks lasers with an InGaN/GaN quantum well in the active region at elevated temperatures
Masyutin D,A.
Rudnev A.A.
Moiseev E.I.
Vainilovich A.G.
Lutsenko E.V.
Tsatsulnikov A.F.
Sakharov A.V.
Arteev D.S.
Nikolaev A.E.
Pivovarova A.A.
Zavarin E.E.
Il'inskaya N.D.
Markov L.K.
Smirnova I.P.
Kryzhanovskaya N.V.
Zhukov A.E.
- Year: 2025
- Volume: 18
- Issue: 3.1
- 0
- 8
- Pages: 125-128
Enhanced optical performance of FAPbBr3-MOF composite films
- Year: 2025
- Volume: 18
- Issue: 3.1
- 1
- 15
- Pages: 105-109
Application of fractal methods for analyzing the microdeformation data of the Earth's crust
- Year: 2025
- Volume: 18
- Issue: 4
- 0
- 34
- Pages: 101-113
Study of resonator optical properties of perylene microcrystals
- Year: 2025
- Volume: 18
- Issue: 1.1
- 14
- 3412
- Pages: 152-157
Polarized Raman scattering in strained GaN nanowires
- Year: 2025
- Volume: 18
- Issue: 1.1
- 8
- 3288
- Pages: 83-87
Vertical spin valve performance of NiFe/Co-PANI/NiFe system
- Year: 2024
- Volume: 17
- Issue: 4
- 10
- 3258
- Pages: 106-113
Threshold current of separate spectral components of the emission spectrum of InGaN LEDs
- Year: 2024
- Volume: 17
- Issue: 3.2
- 11
- 2287
- Pages: 161-165
Growth of long core-shell InGaN nanowires by plasma-assisted molecular beam epitaxy with gradually increasing substrate temperature
Gridchin V.O.
Shugabaev T.M.
Lendyashova V.V.
Kotlyar K.P.
Khrebtov A.I.
Dragunova A.S.
Kryzhanovskaya N.V.
Reznik R.R.
Cirlin G.E.
- Year: 2024
- Volume: 17
- Issue: 3.2
- 15
- 2039
- Pages: 143-147
Influence of the wet-chemical treatment on the optical and structural properties of core-shell InGaN nanowires
Shugabaev T.M.
Gridchin V.O.
Kusnetsov A.
Kulagina A.S.
Khrebtov A.I.
Lendyashova V.V.
Reznik R.R.
Cirlin G.E.
- Year: 2024
- Volume: 17
- Issue: 3.1
- 17
- 2732
- Pages: 306-309
GaN based ultraviolet narrowband photodetectors
- Year: 2024
- Volume: 17
- Issue: 3.1
- 13
- 2526
- Pages: 220-223
Field plates design optimization to increase breakdown voltage of GaN HEMT
- Year: 2024
- Volume: 17
- Issue: 3.1
- 20
- 2613
- Pages: 204-209
A microwave method for measuring the low-frequency noise of transistors
- Year: 2024
- Volume: 17
- Issue: 2
- 21
- 3688
- Pages: 61-70
Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers
- Year: 2024
- Volume: 17
- Issue: 1.1
- 26
- 3664
- Pages: 43-48
Current – voltage characteristics of MaPbI3 perovskite films formed by the single-stage spin-coat method
- Year: 2023
- Volume: 16
- Issue: 4
- 43
- 4462
- Pages: 9-19
Quantum dot-induced photoluminescence enhancement of InGaN nanowires
Shugabaev T.M.
Gridchin V.O.
Reznik R.R.
Khrebtov A.I.
Melnichenko I.A.
Kulagina A.S.
Kotlyar K.P.
Lendyashova V.V.
Kryzhanovskaya N.V.
Cirlin G.E.
- Year: 2023
- Volume: 16
- Issue: 3.2
- 11
- 3900
- Pages: 255-260
Study of morphology and composition of nanoscale AlGaN heterostructures obtained by PA MBE technique on the silicon substrates with the use of porous silicon as buffer layer
- Year: 2023
- Volume: 16
- Issue: 3.2
- 16
- 3790
- Pages: 249-254
Structural surface characteristics of aluminum-gallium nitride films on silicon carbide nanolayers on silicon
- Year: 2023
- Volume: 16
- Issue: 3.2
- 12
- 4082
- Pages: 223-227
A facile low-temperature approach for organics removal from SiO2-CTAB mesoporous particles
- Year: 2023
- Volume: 16
- Issue: 3.2
- 5
- 3743
- Pages: 183-187
On the wetting of polyethylene terephthalate substrates with multicomponent graphene oxide dispersions
- Year: 2023
- Volume: 16
- Issue: 3.2
- 8
- 4135
- Pages: 177-182
Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening
Babichev A.V.
Nadtochiy A.M.
Tkach Yu.S.
Kryzhanovskaya N.V.
Blokhin S.A.
Nevedomskiy V.N.
Gladyshev A.G.
Maleev N.A.
Karachinsky L.Ya.
Novikov I.I.
- Year: 2023
- Volume: 16
- Issue: 3.2
- 20
- 4257
- Pages: 50-55
Simulation and analysis of heterostructures for normally-off p-channel GaN transistor
- Year: 2023
- Volume: 16
- Issue: 3.1
- 29
- 3923
- Pages: 449-453
The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
- Year: 2023
- Volume: 16
- Issue: 3.1
- 13
- 3693
- Pages: 439-443
Photocatalytic properties of NiO – gold plasmonic nanocomposite
Kondrateva A.S.
Komarevtcev I.M.
Enns Ya.B.
Kazakin A.N.
Pitirimova E.A.
Studzinskii V.M.
Mishin M.V.
Karaseov P.A.
- Year: 2023
- Volume: 16
- Issue: 3.1
- 22
- 3833
- Pages: 310-315
Light-emitting and light-detecting perovskite electrochemical cell on silicon
- Year: 2023
- Volume: 16
- Issue: 3.1
- 11
- 3823
- Pages: 94-99
Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates
Chernenko N.E.
Makhov I.S.
Balakirev S.V.
Kirichenko D.V.
Shandyba N.A.
Kryzhanovskaya N.V.
Solodovnik M.S.
- Year: 2023
- Volume: 16
- Issue: 3.1
- 18
- 3821
- Pages: 64-68
Crystallization of robotic swarms in a parabolic potential
Buzakov M.K.
Smirnov V.A.
Sennikova D.V.
Molodtsova A.A.
Rozenblit A.D.
Porvatov V.A.
Burmistrov O.I.
Puhtina E.M.
Dmitriev A.A.
Olekhno N.A.
- Year: 2023
- Volume: 16
- Issue: 3.1
- 26
- 4301
- Pages: 36-40
Electric and thermoelectric properties of a coordination polymer based on phenazine ligands and silver
- Year: 2023
- Volume: 16
- Issue: 2
- 33
- 5071
- Pages: 68-77
Formation of ohmic contacts to n-AlxGa1-xN:Si layers with a high aluminum content
Semenov A.
Nechaev D.
Berezina D.
Guseva Yu.A.
Kulagina M.M.
Smirnova I.P.
Zadiranov Y. M.
Troshkov S.
Shmidt N.P.
- Year: 2023
- Volume: 16
- Issue: 1.3
- 29
- 4087
- Pages: 182-187
Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)
- Year: 2023
- Volume: 16
- Issue: 1.3
- 28
- 4455
- Pages: 170-175
Peculiarities of low frequency noise and non-radiative recombination in AlGaN QWs emitting at 280 nm
- Year: 2023
- Volume: 16
- Issue: 1.3
- 18
- 4181
- Pages: 85-89
Transformation kinetics of a two-dimensional GaN thin layer grown on AlN surface during ammonia flow cycling
- Year: 2023
- Volume: 16
- Issue: 1.3
- 21
- 4209
- Pages: 62-66
Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band
- Year: 2023
- Volume: 16
- Issue: 1.3
- 23
- 4462
- Pages: 33-38
Synthesis of semi-polar GaN(11-22) on a nano-patterned Si(113) substrate
- Year: 2023
- Volume: 16
- Issue: 1.2
- 15
- 4485
- Pages: 224-228
Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate
Bondarenko D.N.
Gridchin V.O.
Kotlyar K.P.
Reznik R.R.
Kirilenko D.A.
Baranov A.I.
Dragunova A.S.
Kryzhanovskaya N.V.
Maksimova A.A.
Cirlin G.E.
- Year: 2023
- Volume: 16
- Issue: 1.2
- 63
- 4978
- Pages: 179-184
In situ conductance studies of electrochemically doped polymer thin films based on nickel-salen complexes
- Year: 2023
- Volume: 16
- Issue: 1.2
- 22
- 4678
- Pages: 90-95
Mechanisms leading to thermal quantum efficiency droop in green InGaN/GaN LEDs
Shabunina E.I.
Ivanov A.E.
Talnishnikh Nadezhda A.
Kartashova A.P.
Poloskin D.S.
Shmidt N.P.
Zakgeim A.L.
Chernyakov A.E.
- Year: 2023
- Volume: 16
- Issue: 1.2
- 31
- 4719
- Pages: 70-76
2DEG-based multilayer AlGaN/GaN heterostructures with lowered sheet resistance
- Year: 2023
- Volume: 16
- Issue: 1.1
- 31
- 4303
- Pages: 380-384
Conductivity in nanostructured films of paramagnetic manganese phthalocyanine
- Year: 2023
- Volume: 16
- Issue: 1.1
- 11
- 4263
- Pages: 346-350
Working process calculation of the control circuit for pulsed operation regime of the MPD accelerator
- Year: 2023
- Volume: 16
- Issue: 1.1
- 7
- 4685
- Pages: 301-308
Self-organization of the structure of porous silicon carbide under external influences
- Year: 2023
- Volume: 16
- Issue: 1.1
- 13
- 4525
- Pages: 79-83
Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates
Gridchin V.O.
Reznik R.R.
Kotlyar K.P.
Shugabaev T.M.
Dragunova A.S.
Kryzhanovskaya N.V.
Cirlin G.E.
- Year: 2022
- Volume: 15
- Issue: 3.3
- 31
- 5152
- Pages: 311-314
Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate
- Year: 2022
- Volume: 15
- Issue: 3.3
- 38
- 5212
- Pages: 281-284
Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
Sinitskaya O.A.
Shubina K.Yu.
Mokhov D.V.
Uvarov A.V.
Filatov V.V.
Mizerov A.M.
Timoshnev S.N.
Nikitina E.V.
- Year: 2022
- Volume: 15
- Issue: 3.3
- 35
- 4970
- Pages: 157-162
GaN IC E-mode p-channel and n-channel transistors simulation
- Year: 2022
- Volume: 15
- Issue: 3.3
- 25
- 4936
- Pages: 134-137
Optimization of InGaN-based luminescent heterostructures by genetic algorithm
- Year: 2022
- Volume: 15
- Issue: 3.2
- 26
- 5137
- Pages: 21-24
Structured biomolecular films for microelectronics
- Year: 2021
- Volume: 14
- Issue: 1
- 33
- 7660
- Pages: 85-99
Nanostructed carbon and organic films: spectral microwave and optical characteristics
- Year: 2020
- Volume: 13
- Issue: 1
- 66
- 8790
- Pages: 106-117
Dehydrated films of protein solutions: structural properties
- Year: 2019
- Volume: 12
- Issue: 4
- 28
- 8650
- Pages: 25-37
The phase separation phenomenological model: Manganite as an example
- Year: 2018
- Volume: 11
- Issue: 3
- 19
- 9303
- Pages: 17-26
AlGaN/GaN heterojunction quality monitoring with large-area heterostructure field-effect transistor
- Year: 2009
- Issue: 1
- 0
- 8477
- Pages: 43-48
Visible quantum cutting in green emitting BaF2: Gd3+, Tb3+ phosphors: an approach towards mercury-free lamps
- Year: 2017
- Volume: 10
- Issue: 3
- 93
- 9630
- Pages: 64-74
An effect of optical radiation on charge and magnetic states of the iron ions in the sillenites
- Year: 2016
- Issue: 4
- 179
- 8586
- Pages: 22-32
Temperature evolution of lanthanum-strontium manganites magnetic properties
- Year: 2016
- Issue: 3
- 119
- 8923
- Pages: 15-22
Kohonen self-organizing map application to representative sample formation in the training of the multilayer perceptron
- Year: 2016
- Issue: 2
- 379
- 9158
- Pages: 95-107
The composition and the structure of thin films based on metal porphyrin complexes
- Year: 2016
- Issue: 2
- 137
- 8608
- Pages: 9-18
Self-organization of radiation defects in inorganic dielectrics
- Year: 2009
- Issue: 2
- 0
- 8611
- Pages: 7-10
Ultraviolet photodiodes on the basis of the contactsof metal and aluminum-nitride gallium solid solutions
- Year: 2012
- Issue: 3
- 0
- 9127
- Pages: 28-31
The growth of gallium nitride layers with low dislocation density
- Year: 2012
- Issue: 4
- 0
- 8606
- Pages: 28-31
Degradation phenomena and the problem of semiconductor light emitting sources reliability
- Year: 2013
- Issue: 2
- 7
- 8439
- Pages: 71-80