Articles by keywords "GaN"
Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers
- Year: 2024
- Volume: 17
- Issue: 1.1
- 5
- 245
- Pages: 43-48
Current – voltage characteristics of MaPbI3 perovskite films formed by the single-stage spin-coat method
- Year: 2023
- Volume: 16
- Issue: 4
- 22
- 1033
- Pages: 9-19
Quantum dot-induced photoluminescence enhancement of InGaN nanowires
Shugabaev T.M.
Gridchin V.O.
Reznik R.R.
Khrebtov A.I.
Melnichenko I.A.
Kulagina A.S.
Kotlyar K.P.
Lendyashova V.V.
Kryzhanovskaya N.V.
Cirlin G.E.
- Year: 2023
- Volume: 16
- Issue: 3.2
- 3
- 783
- Pages: 255-260
Study of morphology and composition of nanoscale AlGaN heterostructures obtained by PA MBE technique on the silicon substrates with the use of porous silicon as buffer layer
- Year: 2023
- Volume: 16
- Issue: 3.2
- 7
- 728
- Pages: 249-254
Structural surface characteristics of aluminum-gallium nitride films on silicon carbide nanolayers on silicon
- Year: 2023
- Volume: 16
- Issue: 3.2
- 7
- 801
- Pages: 223-227
A facile low-temperature approach for organics removal from SiO2-CTAB mesoporous particles
- Year: 2023
- Volume: 16
- Issue: 3.2
- 0
- 790
- Pages: 183-187
On the wetting of polyethylene terephthalate substrates with multicomponent graphene oxide dispersions
- Year: 2023
- Volume: 16
- Issue: 3.2
- 2
- 916
- Pages: 177-182
Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening
Babichev A.V.
Nadtochiy A.M.
Tkach Yu.S.
Kryzhanovskaya N.V.
Blokhin S.A.
Nevedomskiy V.N.
Gladyshev A.G.
Maleev N.A.
Karachinsky L.Ya.
Novikov I.I.
- Year: 2023
- Volume: 16
- Issue: 3.2
- 6
- 818
- Pages: 50-55
Simulation and analysis of heterostructures for normally-off p-channel GaN transistor
- Year: 2023
- Volume: 16
- Issue: 3.1
- 14
- 827
- Pages: 449-453
The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
- Year: 2023
- Volume: 16
- Issue: 3.1
- 5
- 735
- Pages: 439-443
Photocatalytic properties of NiO – gold plasmonic nanocomposite
Kondrateva A.S.
Komarevtcev I.M.
Enns Ya.B.
Kazakin A.N.
Pitirimova E.A.
Studzinskii V.M.
Mishin M.V.
Karaseov P.A.
- Year: 2023
- Volume: 16
- Issue: 3.1
- 16
- 774
- Pages: 310-315
Light-emitting and light-detecting perovskite electrochemical cell on silicon
- Year: 2023
- Volume: 16
- Issue: 3.1
- 4
- 914
- Pages: 94-99
Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates
Chernenko N.E.
Makhov I.S.
Balakirev S.V.
Kirichenko D.V.
Shandyba N.A.
Kryzhanovskaya N.V.
Solodovnik M.S.
- Year: 2023
- Volume: 16
- Issue: 3.1
- 9
- 832
- Pages: 64-68
Crystallization of robotic swarms in a parabolic potential
Buzakov M.K.
Smirnov V.A.
Sennikova D.V.
Molodtsova A.A.
Rozenblit A.D.
Porvatov V.A.
Burmistrov O.I.
Puhtina E.M.
Dmitriev A.A.
Olekhno N.A.
- Year: 2023
- Volume: 16
- Issue: 3.1
- 14
- 983
- Pages: 36-40
Electric and thermoelectric properties of a coordination polymer based on phenazine ligands and silver
- Year: 2023
- Volume: 16
- Issue: 2
- 22
- 1636
- Pages: 68-77
Formation of ohmic contacts to n-AlxGa1-xN:Si layers with a high aluminum content
Semenov A.
Nechaev D.
Berezina D.
Guseva Yu.A.
Kulagina M.M.
Smirnova I.P.
Zadiranov Y. M.
Troshkov S.
Shmidt N.P.
- Year: 2023
- Volume: 16
- Issue: 1.3
- 13
- 1290
- Pages: 182-187
Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)
- Year: 2023
- Volume: 16
- Issue: 1.3
- 23
- 1717
- Pages: 170-175
Peculiarities of low frequency noise and non-radiative recombination in AlGaN QWs emitting at 280 nm
- Year: 2023
- Volume: 16
- Issue: 1.3
- 13
- 1304
- Pages: 85-89
Transformation kinetics of a two-dimensional GaN thin layer grown on AlN surface during ammonia flow cycling
- Year: 2023
- Volume: 16
- Issue: 1.3
- 14
- 1438
- Pages: 62-66
Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band
- Year: 2023
- Volume: 16
- Issue: 1.3
- 17
- 1494
- Pages: 33-38
Synthesis of semi-polar GaN(11-22) on a nano-patterned Si(113) substrate
- Year: 2023
- Volume: 16
- Issue: 1.2
- 7
- 1351
- Pages: 224-228
Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate
Bondarenko D.N.
Gridchin V.O.
Kotlyar K.P.
Reznik R.R.
Kirilenko D.A.
Baranov A.I.
Dragunova A.S.
Kryzhanovskaya N.V.
Maksimova A.A.
Cirlin G.E.
- Year: 2023
- Volume: 16
- Issue: 1.2
- 39
- 1634
- Pages: 179-184
In situ conductance studies of electrochemically doped polymer thin films based on nickel-salen complexes
- Year: 2023
- Volume: 16
- Issue: 1.2
- 13
- 1788
- Pages: 90-95
Mechanisms leading to thermal quantum efficiency droop in green InGaN/GaN LEDs
Shabunina E.I.
Ivanov A.E.
Talnishnikh Nadezhda A.
Kartashova A.P.
Poloskin D.S.
Shmidt N.P.
Zakgeim A.L.
Chernyakov A.E.
- Year: 2023
- Volume: 16
- Issue: 1.2
- 19
- 1637
- Pages: 70-76
2DEG-based multilayer AlGaN/GaN heterostructures with lowered sheet resistance
- Year: 2023
- Volume: 16
- Issue: 1.1
- 16
- 1367
- Pages: 380-384
Conductivity in nanostructured films of paramagnetic manganese phthalocyanine
- Year: 2023
- Volume: 16
- Issue: 1.1
- 5
- 1488
- Pages: 346-350
Working process calculation of the control circuit for pulsed operation regime of the MPD accelerator
- Year: 2023
- Volume: 16
- Issue: 1.1
- 5
- 1564
- Pages: 301-308
Self-organization of the structure of porous silicon carbide under external influences
- Year: 2023
- Volume: 16
- Issue: 1.1
- 6
- 1479
- Pages: 79-83
Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates
Gridchin V.O.
Reznik R.R.
Kotlyar K.P.
Shugabaev T.M.
Dragunova A.S.
Kryzhanovskaya N.V.
Cirlin G.E.
- Year: 2022
- Volume: 15
- Issue: 3.3
- 21
- 1914
- Pages: 311-314
Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate
- Year: 2022
- Volume: 15
- Issue: 3.3
- 25
- 1958
- Pages: 281-284
Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
Sinitskaya O.A.
Shubina K.Yu.
Mokhov D.V.
Uvarov A.V.
Filatov V.V.
Mizerov A.M.
Timoshnev S.N.
Nikitina E.V.
- Year: 2022
- Volume: 15
- Issue: 3.3
- 17
- 1985
- Pages: 157-162
GaN IC E-mode p-channel and n-channel transistors simulation
- Year: 2022
- Volume: 15
- Issue: 3.3
- 13
- 1952
- Pages: 134-137
Optimization of InGaN-based luminescent heterostructures by genetic algorithm
- Year: 2022
- Volume: 15
- Issue: 3.2
- 20
- 2148
- Pages: 21-24
Structured biomolecular films for microelectronics
- Year: 2021
- Volume: 14
- Issue: 1
- 32
- 4248
- Pages: 85-99
Nanostructed carbon and organic films: spectral microwave and optical characteristics
- Year: 2020
- Volume: 13
- Issue: 1
- 64
- 5464
- Pages: 106-117
Dehydrated films of protein solutions: structural properties
- Year: 2019
- Volume: 12
- Issue: 4
- 27
- 5246
- Pages: 25-37
The phase separation phenomenological model: Manganite as an example
- Year: 2018
- Volume: 11
- Issue: 3
- 19
- 6256
- Pages: 17-26
AlGaN/GaN heterojunction quality monitoring with large-area heterostructure field-effect transistor
- Year: 2009
- Issue: 1
- 0
- 5831
- Pages: 43-48
Visible quantum cutting in green emitting BaF2: Gd3+, Tb3+ phosphors: an approach towards mercury-free lamps
- Year: 2017
- Volume: 10
- Issue: 3
- 89
- 6352
- Pages: 64-74
An effect of optical radiation on charge and magnetic states of the iron ions in the sillenites
- Year: 2016
- Issue: 4
- 179
- 5738
- Pages: 22-32
Temperature evolution of lanthanum-strontium manganites magnetic properties
- Year: 2016
- Issue: 3
- 118
- 5984
- Pages: 15-22
Kohonen self-organizing map application to representative sample formation in the training of the multilayer perceptron
- Year: 2016
- Issue: 2
- 375
- 6387
- Pages: 95-107
The composition and the structure of thin films based on metal porphyrin complexes
- Year: 2016
- Issue: 2
- 133
- 5750
- Pages: 9-18
Self-organization of radiation defects in inorganic dielectrics
- Year: 2009
- Issue: 2
- 0
- 5750
- Pages: 7-10
Ultraviolet photodiodes on the basis of the contactsof metal and aluminum-nitride gallium solid solutions
- Year: 2012
- Issue: 3
- 0
- 6218
- Pages: 28-31
The growth of gallium nitride layers with low dislocation density
- Year: 2012
- Issue: 4
- 0
- 5695
- Pages: 28-31
Degradation phenomena and the problem of semiconductor light emitting sources reliability
- Year: 2013
- Issue: 2
- 5
- 5579
- Pages: 71-80