Articles by keywords "luminescence"
The role of charge carrier diffusion in halide perovskite luminophores with memory for optical computing
- Year: 2026
- Volume: 19
- Issue: 1.1
- 4
- 327
- Pages: 156-161
Second harmonic generation in iodine quasi-2D halide perovskite crystals
- Year: 2026
- Volume: 19
- Issue: 1.1
- 3
- 356
- Pages: 151-155
Investigation of self-hybridized waveguide exciton-polaritons in the two-dimensional antiferromagnet CrSBr at room temperature
- Year: 2026
- Volume: 19
- Issue: 1.1
- 5
- 370
- Pages: 146-150
Illumination and temperature dependence of optical interactions in multijunction solar cells
- Year: 2026
- Volume: 19
- Issue: 1.1
- 5
- 335
- Pages: 111-116
Perovskite microwires generating red laser emission
- Year: 2026
- Volume: 19
- Issue: 1.1
- 3
- 372
- Pages: 81-85
Interband absorption and photoluminescence in lens-shaped quantum dots: an adiabatic approach
- Year: 2026
- Volume: 19
- Issue: 1.1
- 1
- 356
- Pages: 69-74
Photoluminescence control of WSe₂ monolayers integrated with plasmon nanobumps via strain engineering
- Year: 2026
- Volume: 19
- Issue: 1.1
- 5
- 355
- Pages: 56-63
Photoluminescence and photoreflectance of long-wavelength HgTe/CdHgTe heterostructure
- Year: 2026
- Volume: 19
- Issue: 1.1
- 2
- 361
- Pages: 51-55
Temperature-dependent infrared photoluminescence study of GeSn/Si and GeSiSn/Si multiple quantum wells
- Year: 2026
- Volume: 19
- Issue: 1.1
- 3
- 351
- Pages: 45-50
Radiative recombination in InAs/InAsSb/InAsSbP heterostructures
- Year: 2026
- Volume: 19
- Issue: 1.1
- 2
- 338
- Pages: 33-38
The influence of diamond origin on the properties of NV centers
- Year: 2026
- Volume: 19
- Issue: 1.1
- 2
- 368
- Pages: 27-32
Photoluminescence and photoreflectance of annealed HgCdTe films with high CdTe content
- Year: 2026
- Volume: 19
- Issue: 1.1
- 11
- 380
- Pages: 6-11
Two bands in PL spectra of InGaN/GaN superlattice embedded in GaN nanowire
- Year: 2025
- Volume: 18
- Issue: 4.1
- 5
- 862
- Pages: 44-48
Investigation of metal-enhanced photoluminescence of zinc oxide films induced by platinum nanoparticles of different sizes
- Year: 2025
- Volume: 18
- Issue: 3.2
- 5
- 919
- Pages: 247-252
Effect of rapid thermal annealing on the properties of GaPN(As)-based heterostructures grown on silicon substrates
- Year: 2025
- Volume: 18
- Issue: 3.2
- 7
- 885
- Pages: 45-48
Optical characterization and surface plasmon polariton mode simulation of GaN/InGaN nanowires on Ag/AlOx film for plasmonic nanolasers
- Year: 2025
- Volume: 18
- Issue: 3.1
- 7
- 941
- Pages: 278-282
Phase control of quasi-2D halide perovskite by post-treatment and antisolvent treatment techniques
- Year: 2025
- Volume: 18
- Issue: 3.1
- 10
- 912
- Pages: 263-267
Structural and optical properties of InP layers obtained by plasma-enhanced atomic layer deposition at different temperatures
- Year: 2025
- Volume: 18
- Issue: 3.1
- 7
- 980
- Pages: 247-251
Optical studies of InGaAs/GaAs quantum well mesa structures passivated with sol-gel SiO2
- Year: 2025
- Volume: 18
- Issue: 3.1
- 5
- 886
- Pages: 237-241
Optical properties of aluminum nanostructures modified by polymer coatings
- Year: 2025
- Volume: 18
- Issue: 3.1
- 5
- 851
- Pages: 232-236
Photoluminescence of InGaAs/InAlAs short-period superlattices grown on InP substrate
- Year: 2025
- Volume: 18
- Issue: 3.1
- 1
- 930
- Pages: 95-98
Optical studies of InAs/InAsSb/InAsSbP heterostructures
- Year: 2025
- Volume: 18
- Issue: 3.1
- 6
- 889
- Pages: 91-94
Hybrid emitters based on two-dimensional WSe2 and ordered plasmonic nanobumps
- Year: 2025
- Volume: 18
- Issue: 3.1
- 9
- 1042
- Pages: 30-35
Optimizing the front contact grid parameters of рhotovoltaic laser power converters
- Year: 2025
- Volume: 18
- Issue: 1.1
- 15
- 4116
- Pages: 111-116
Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs
- Year: 2025
- Volume: 18
- Issue: 1.1
- 24
- 4128
- Pages: 105-110
Impact of geometry on semiconductor quantum dots optical properties
- Year: 2025
- Volume: 18
- Issue: 1.1
- 16
- 4029
- Pages: 88-94
Optical characteristics of Hg0.7Cd0.3Te films with etched graded-gap surface layer
- Year: 2025
- Volume: 18
- Issue: 1.1
- 27
- 4248
- Pages: 34-39
Fluorescent properties of boron nitride quantum dots depending on functionalizing ligands
- Year: 2024
- Volume: 17
- Issue: 3.2
- 25
- 3102
- Pages: 297-300
Luminescence enhancement in inelastic tunnelling of electrons by changing the geometry of the tunnelling contact
- Year: 2024
- Volume: 17
- Issue: 3.2
- 15
- 3435
- Pages: 236-240
Growth of long core-shell InGaN nanowires by plasma-assisted molecular beam epitaxy with gradually increasing substrate temperature
- Year: 2024
- Volume: 17
- Issue: 3.2
- 17
- 2900
- Pages: 143-147
Influence of the wet-chemical treatment on the optical and structural properties of core-shell InGaN nanowires
- Year: 2024
- Volume: 17
- Issue: 3.1
- 18
- 3591
- Pages: 306-309
Photoluminescence of self-induced InAs nanowires diluted with nitrogen
- Year: 2024
- Volume: 17
- Issue: 3.1
- 15
- 3501
- Pages: 34-37
Creation of optical isolated GaP(NAs) microcavities on silicon
- Year: 2024
- Volume: 17
- Issue: 3
- 33
- 4241
- Pages: 25-35
Formation and light-emitting properties of ion-synthesized Ga2O3 nanoinclusions in the Al2O3/Si matrix
- Year: 2024
- Volume: 17
- Issue: 1.1
- 21
- 3948
- Pages: 171-177
Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range
- Year: 2024
- Volume: 17
- Issue: 1.1
- 21
- 3855
- Pages: 143-148
Electroluminescence of narrow-gap InAs/InAs1–ySby/InAsSbP heterostructures with y = 0.07–0.12
- Year: 2024
- Volume: 17
- Issue: 1.1
- 27
- 3874
- Pages: 77-82
Luminescence in nanostructures with compensated quantum wells under optical and electrical pumping
- Year: 2024
- Volume: 17
- Issue: 1.1
- 27
- 4477
- Pages: 68-76
Electron irradiation as a method for controlling luminescence of hexagonal boron nitride
- Year: 2024
- Volume: 17
- Issue: 1.1
- 38
- 4345
- Pages: 49-54
Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers
- Year: 2024
- Volume: 17
- Issue: 1.1
- 28
- 4581
- Pages: 43-48
Ultraviolet photoluminescence enhancement of zinc oxide nanocrystals in colloidal mixtures with spark discharge aluminum nanoparticles
- Year: 2023
- Volume: 16
- Issue: 3.2
- 16
- 5132
- Pages: 261-266
Quantum dot-induced photoluminescence enhancement of InGaN nanowires
- Year: 2023
- Volume: 16
- Issue: 3.2
- 13
- 4750
- Pages: 255-260
Photoluminescence anisotropy in hybrid nanostructures based on gallium phosphide nanowire and 2D transition metal dichalcogenides
- Year: 2023
- Volume: 16
- Issue: 3.2
- 15
- 4816
- Pages: 130-136
Features of photovoltaic cell degradation of solar power plants in Hong Kong and Saint Petersburg
- Year: 2023
- Volume: 16
- Issue: 3.2
- 5
- 4838
- Pages: 44-49
Towards versatile photonics based on GaP nanowires decorated with carbon dots
- Year: 2023
- Volume: 16
- Issue: 3.1
- 25
- 4844
- Pages: 187-192
Deep-Level Emission Tailoring in ZnO Nanostructures Grown via Hydrothermal Synthesis
- Year: 2023
- Volume: 16
- Issue: 3.1
- 26
- 4765
- Pages: 176-181
The features in the formation of oxide porous structures based on SiO2–SnOх
- Year: 2023
- Volume: 16
- Issue: 3.1
- 23
- 5158
- Pages: 10-15
Influence of stimulated interband emission on terahertz photoluminescence in n-type gallium arsenide layers
- Year: 2023
- Volume: 16
- Issue: 3
- 216
- 5618
- Pages: 29-38
Synthesis and PL study of Sr3 (VO4 ) 2 :Eu3+ phosphor for W-LED application
- Year: 2023
- Volume: 16
- Issue: 2
- 35
- 6025
- Pages: 61-67
Multi-state lasing in microdisk lasers with InAs/GaAs quantum dots
- Year: 2023
- Volume: 16
- Issue: 1.3
- 26
- 5062
- Pages: 157-162
Suppression of molecular anyon states in the magneto-photoluminescence spectra of InP/GaInP2 quantum dots at a temperature of 30 K
- Year: 2023
- Volume: 16
- Issue: 1.3
- 17
- 5022
- Pages: 112-116
Interband photoluminescence of InAs(P)/Si nanowires
- Year: 2023
- Volume: 16
- Issue: 1.3
- 35
- 5235
- Pages: 101-107
Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band
- Year: 2023
- Volume: 16
- Issue: 1.3
- 24
- 5380
- Pages: 33-38
Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers
- Year: 2023
- Volume: 16
- Issue: 1.3
- 42
- 5004
- Pages: 14-19
Thermally induced depolarization of fluorescence of matrix-isolated MoS2 nanodots
- Year: 2023
- Volume: 16
- Issue: 1.1
- 7
- 5124
- Pages: 356-362
Дислокационная фотолюминесценция в самоимплантированном кремнии с различными ориентациями поверхности
- Year: 2023
- Volume: 16
- Issue: 1.1
- 15
- 5294
- Pages: 162-166
Near-infrared photoluminescence in n-GaAs/AlGaAs quantum wells with different locations of compensating acceptor impurity
- Year: 2022
- Volume: 15
- Issue: 4
- 87
- 6418
- Pages: 32-43
Photoluminescence from lead halide perovskite superlattices
- Year: 2022
- Volume: 15
- Issue: 3.3
- 30
- 5658
- Pages: 326-329
Aluminum nanostructures produced by aerosol dry printing for ultraviolet photoluminescence enhancement
- Year: 2022
- Volume: 15
- Issue: 3.3
- 20
- 6093
- Pages: 276-280
Peculiarities of the luminescence response of two-dimensional photonic crystals with ordered Ge(Si) nanoislands obtained using different ordering approaches
- Year: 2022
- Volume: 15
- Issue: 3.3
- 19
- 5599
- Pages: 188-193
Development of technological methods for fabrication high-density luminescent structures based on up-conversion NaYF4:Yb3+, Er3+ particles
- Year: 2022
- Volume: 15
- Issue: 3.3
- 24
- 6102
- Pages: 138-141
Photoluminescent α-NaYbF4:Er0.02Ce0.02Zn0.1 nanoparticles for bioimaging in visible and infrared ranges
- Year: 2022
- Volume: 15
- Issue: 3.2
- 6
- 5791
- Pages: 306-310
Hollow-core antiresonant optical fiber activated with YAG:Yb3+
- Year: 2022
- Volume: 15
- Issue: 3.2
- 13
- 5831
- Pages: 240-245
Optimization of InGaN-based luminescent heterostructures by genetic algorithm
- Year: 2022
- Volume: 15
- Issue: 3.2
- 27
- 5937
- Pages: 21-24
Investigation of temperature stability of germanium nanowires obtained by electrochemical deposition
- Year: 2022
- Volume: 15
- Issue: 3.1
- 29
- 5966
- Pages: 59-64
The application of barium fluoride luminescence: сhallenges and prospects
- Year: 2019
- Volume: 12
- Issue: 1
- 48
- 10777
- Pages: 11-27
Effect of gamma radiation on luminescence and photoconductivity of MEH-PPV – lead sulfide nanocomposite
- Year: 2018
- Volume: 11
- Issue: 4
- 25
- 10110
- Pages: 35-46
Effect of gamma radiation on the thin nanocomposite MEH-PPV/C60 films
- Year: 2018
- Volume: 11
- Issue: 4
- 35
- 10131
- Pages: 24-34
Exitons condensation in quasi-2D SiGe layers - Si/Si1-xGex/Si heterostructures
- Year: 2010
- Issue: 3
- 0
- 9868
- Pages: 7-13
Gamma-induced effect on the luminescence of nanocomposites of MEH-PPV conductive polymer with lead sulphide quantum dots
- Year: 2018
- Volume: 11
- Issue: 2
- 27
- 9976
- Pages: 41-48
The structure of ZnTPP, ZnTPP-C60 thin films and X-ray effect on their photoluminescence
- Year: 2018
- Volume: 11
- Issue: 2
- 33
- 10359
- Pages: 26-40
Properties of the semiconductor structure with a p–n-junction created in a porous silicon film under laser radiation
- Year: 2018
- Volume: 11
- Issue: 1
- 31
- 10277
- Pages: 18-25
Synthesis and luminescence properties OF Ca5(PO4)3Cl:Eu2+ phosphor for solid state lighting
- Year: 2016
- Issue: 1
- 273
- 10281
- Pages: 41-47
Near- and far-infrared emission from GaAs/AlGaAs quantum wells under interband optical excitation
- Year: 2013
- Issue: 4
- 430
- 10212
- Pages: 109-114
A final DF-CО2 amplifier of the multi-terawatt picosecond 10 micrometer laser system
- Year: 2013
- Issue: 4
- 331
- 9618
- Pages: 48-55
The annealing effect on green X-ray luminescence of zinc oxide powders
- Year: 2013
- Issue: 4
- 510
- 10012
- Pages: 21-30
The effect of the ion-exchange treatment and gamma-irradiation on the spectra of phosphate glasses doped with europium
- Year: 2011
- Issue: 4
- 0
- 9238
- Pages: 137-142
Energy spectrum and optical transitions in CdHgTe nanoheterostructures
- Year: 2012
- Issue: 2
- 1
- 9614
- Pages: 69-73
Development features of degradation processes in high-power blue InGaN/GaN light-emitting diodes
- Year: 2012
- Issue: 3
- 0
- 9505
- Pages: 45-48
Improvement and stabilization of optical characteristics of the porous silicon
- Year: 2013
- Issue: 2
- 660
- 10341
- Pages: 130-136