Articles by keywords "кремний"
Lifetimes of electrons and holes in pure Si at temperature 40 mK
- Year: 2026
- Volume: 19
- Issue: 1.1
- 21
- 856
- Pages: 21-26
The resistive switching effect in the n-GaN/p-Si heterostructures
- Year: 2026
- Volume: 19
- Issue: 1
- 25
- 1203
- Pages: 9-18
Femtosecond laser modification of amorphous silicon films for photovoltaic and polarization optics applications
- Year: 2025
- Volume: 18
- Issue: 4.1
- 16
- 1374
- Pages: 117-122
Ca5Si3 film MBE growth on Si(111) substrate: structure and optical properties
- Year: 2025
- Volume: 18
- Issue: 4.1
- 2
- 1340
- Pages: 73-78
The origin of the lateral photovoltaic effect in the SiO2/TeO2/Bi2Te3/n-Si(111) multilayer structure
- Year: 2025
- Volume: 18
- Issue: 4.1
- 15
- 1332
- Pages: 15-20
Si-Fe composites with embedded α-FeSi2 nanocrystals: formation and thermoelectric properties
- Year: 2025
- Volume: 18
- Issue: 4.1
- 8
- 1301
- Pages: 9-14
Marker ink based dye as a tool for intravital high-resolution visualization of cells on a silicon
- Year: 2025
- Volume: 18
- Issue: 3.2
- 7
- 1391
- Pages: 269-274
Localized Ga droplets formation on nanopatterned silicon substrates
- Year: 2025
- Volume: 18
- Issue: 3.2
- 7
- 1346
- Pages: 57-59
Morphological features of CVD-grown Si nanostructures in meso- and macroporous silicas
- Year: 2025
- Volume: 18
- Issue: 3.1
- 5
- 1361
- Pages: 252-257
Structural and optical properties of InP layers obtained by plasma-enhanced atomic layer deposition at different temperatures
- Year: 2025
- Volume: 18
- Issue: 3.1
- 12
- 1500
- Pages: 247-251
Investigation of second harmonic generation in spherical mesoporous Si/SiO2 nanoparticles on gold
- Year: 2025
- Volume: 18
- Issue: 3.1
- 7
- 1385
- Pages: 191-194
Black silicon formation using cryogenic etching and photoresist layer
- Year: 2025
- Volume: 18
- Issue: 3.1
- 11
- 1482
- Pages: 182-186
Composition and properties of porous silicon nanoparticles with deposited cinnarizine
- Year: 2025
- Volume: 18
- Issue: 3.1
- 8
- 1375
- Pages: 99-104
Modification of silicon nanowires with silver nanoparticles for gas sensor applications
- Year: 2025
- Volume: 18
- Issue: 3.1
- 5
- 1396
- Pages: 81-84
Copper deposition onto porous silicon by vacuum thermal evaporation
- Year: 2025
- Volume: 18
- Issue: 3.1
- 10
- 1406
- Pages: 59-64
Si-based photodetector with an Mg2Si contact layer for SWIR range
- Year: 2025
- Volume: 18
- Issue: 3.1
- 8
- 1464
- Pages: 53-58
Influence of the growth regime on the transport properties of doped Mg2Si films
- Year: 2025
- Volume: 18
- Issue: 3.1
- 8
- 1479
- Pages: 40-43
Ordered GaAs NW growth on Si(111) substrates modified by two-step FIB treatment
- Year: 2025
- Volume: 18
- Issue: 3.1
- 13
- 1505
- Pages: 19-22
Memristor effect in heterostructures based on gallium nitride nanowires on silicon
- Year: 2025
- Volume: 18
- Issue: 4
- 23
- 1576
- Pages: 9-20
The influence of hole states on the electronic and electrostatic properties of 2D layers based on the silicon-germaniumsilicon heterostructure
- Year: 2025
- Volume: 18
- Issue: 2
- 31
- 4688
- Pages: 22-29
Influence of Ge nanolayers on the resistive switching effect in amorphous hydrogenated silicon based structures
- Year: 2025
- Volume: 18
- Issue: 1.1
- 11
- 4564
- Pages: 134-139
Fluorescence of hybrid structures based on carbon dots and GaP, GaN, Si nanowires
- Year: 2025
- Volume: 18
- Issue: 1.1
- 15
- 4615
- Pages: 77-82
Study of GaPN(As) layers grown by molecular beam epitaxy on silicon substrates
- Year: 2024
- Volume: 17
- Issue: 3.2
- 21
- 3669
- Pages: 275-278
Nonlinear optical phenomena in mesoporous SiO2 and Si/SiO2 nanoparticles
- Year: 2024
- Volume: 17
- Issue: 3.2
- 21
- 3646
- Pages: 207-211
The electronic band structure of hexagonal silicon polytypes
- Year: 2024
- Volume: 17
- Issue: 4
- 58
- 4882
- Pages: 9-19
Effect of diameter on lattice thermal conductivity of α-FeSi2 and ε-FeSi nanowires
- Year: 2024
- Volume: 17
- Issue: 3.2
- 12
- 3647
- Pages: 107-111
The quest for direct band beta iron disilicide: collaboration of theoretical and experimental approaches
- Year: 2024
- Volume: 17
- Issue: 3.2
- 6
- 3730
- Pages: 103-106
Mg2Si synthesis on silicon crystals with different aspect ratio
- Year: 2024
- Volume: 17
- Issue: 3.2
- 27
- 3769
- Pages: 31-35
Deposition of tin and gold on porous silicon by vacuum thermal spraying
- Year: 2024
- Volume: 17
- Issue: 3.2
- 21
- 3913
- Pages: 20-24
Autostainer feature for multielectrode arrays: proof-of-concept
- Year: 2024
- Volume: 17
- Issue: 3.1
- 19
- 3765
- Pages: 320-324
Gallium phosphide/black silicon heterojunction solar cells
- Year: 2024
- Volume: 17
- Issue: 3.1
- 27
- 3768
- Pages: 199-203
Effect of light incidence angle on the characteristics of silicon solar cells with different texturing
- Year: 2024
- Volume: 17
- Issue: 3.1
- 16
- 3651
- Pages: 134-137
Combined approach of patterning on SiO2/Si substrate using ion beam and chemical wet etching
- Year: 2024
- Volume: 17
- Issue: 3.1
- 17
- 3768
- Pages: 75-78
The effect of the rate of temperature change on the thermomigration of liquid inclusions in silicon
- Year: 2024
- Volume: 17
- Issue: 3.1
- 28
- 4006
- Pages: 23-27
Numerical simulation of the tunnel effect in the gallium nitride heterostructure on silicon
- Year: 2024
- Volume: 17
- Issue: 3
- 28
- 4440
- Pages: 46-56
Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy
- Year: 2024
- Volume: 17
- Issue: 1.1
- 54
- 4395
- Pages: 62-67
Size effects in molecular dynamics simulations of a fullerene ion impact on the silicon surface
- Year: 2023
- Volume: 16
- Issue: 4
- 31
- 5749
- Pages: 76-85
Study of morphology and composition of nanoscale AlGaN heterostructures obtained by PA MBE technique on the silicon substrates with the use of porous silicon as buffer layer
- Year: 2023
- Volume: 16
- Issue: 3.2
- 18
- 5088
- Pages: 249-254
Photo-assisted adsorption of enzyme molecules onto a surface-modified silicon substrate
- Year: 2023
- Volume: 16
- Issue: 3.1
- 8
- 5387
- Pages: 444-448
Heterojunction solar cells based on nanostructured black silicon
- Year: 2023
- Volume: 16
- Issue: 3.1
- 19
- 5279
- Pages: 434-438
Exciton dynamics characterization by electrochemical impedance spectroscopy of CsPbBr3(I3) perovskite nanocrystals for photovoltaic application
- Year: 2023
- Volume: 16
- Issue: 3.1
- 27
- 5431
- Pages: 278-283
Towards nanowire-based selective vapor sensing with an aid of impedance spectroscopy
- Year: 2023
- Volume: 16
- Issue: 3.1
- 13
- 5129
- Pages: 151-156
Effect of plasma-chemical treatment of Si(001) substrates on the subsequent epitaxial growth of GaAs
- Year: 2023
- Volume: 16
- Issue: 3.1
- 24
- 5210
- Pages: 122-127
Mg2Si film on Si(111) prepared by Ultra-Fast Mg reactive deposition: crystal structure and thermoelectric properties
- Year: 2023
- Volume: 16
- Issue: 3.1
- 61
- 6416
- Pages: 106-111
A change in the morphology of multilayer porous silicon with a stepwise decrease in the etching current density
- Year: 2023
- Volume: 16
- Issue: 3.1
- 10
- 5010
- Pages: 100-105
Light-emitting and light-detecting perovskite electrochemical cell on silicon
- Year: 2023
- Volume: 16
- Issue: 3.1
- 14
- 5120
- Pages: 94-99
Ultrathin Cr and Fe monosilicides on Si(111) substrate: formation, optical and thermoelectrical properties
- Year: 2023
- Volume: 16
- Issue: 3.1
- 25
- 5716
- Pages: 84-89
The features in the formation of oxide porous structures based on SiO2–SnOх
- Year: 2023
- Volume: 16
- Issue: 3.1
- 24
- 5677
- Pages: 10-15
Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics
- Year: 2023
- Volume: 16
- Issue: 1.3
- 14
- 5660
- Pages: 176-181
Curvature and bow of III-N HEMT structures during epitaxy on silicon substrates
- Year: 2023
- Volume: 16
- Issue: 1.3
- 38
- 5554
- Pages: 50-54
Compositions based on porous silicon and nickel oxide obtained by cooperative synthesis
- Year: 2023
- Volume: 16
- Issue: 1.1
- 20
- 6059
- Pages: 393-397
Дислокационная фотолюминесценция в самоимплантированном кремнии с различными ориентациями поверхности
- Year: 2023
- Volume: 16
- Issue: 1.1
- 15
- 5764
- Pages: 162-166
Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface
- Year: 2023
- Volume: 16
- Issue: 1.1
- 27
- 5698
- Pages: 153-157
Study of quasi 1D silicon nanostructures adsorption properties via impedance spectroscopy
- Year: 2023
- Volume: 16
- Issue: 1.1
- 31
- 5936
- Pages: 43-48
Radiation of high-energy electrons when channeling in the bent silicon and germanium monocrystals
- Year: 2023
- Volume: 16
- Issue: 1
- 36
- 7459
- Pages: 33-50
Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates
- Year: 2022
- Volume: 15
- Issue: 3.3
- 32
- 6418
- Pages: 311-314
Optical studies of InP nanostructures monolithically integrated in Si (100)
- Year: 2022
- Volume: 15
- Issue: 3.3
- 21
- 6383
- Pages: 260-264
Plasma deposited indium phosphide and its electrophysical properties
- Year: 2022
- Volume: 15
- Issue: 3.3
- 46
- 7298
- Pages: 123-127
Investigation of degradation characteristics of photosensitive structures with porous silicon
- Year: 2022
- Volume: 15
- Issue: 3.3
- 11
- 6637
- Pages: 82-85
Study of FIB-modified silicon areas by AFM and Raman spectroscopy
- Year: 2022
- Volume: 15
- Issue: 3.3
- 23
- 6255
- Pages: 59-63
Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si
- Year: 2022
- Volume: 15
- Issue: 3.3
- 25
- 6206
- Pages: 54-58
Effect of FIB-modification of Si(111) surface on GaAs nanowire growth
- Year: 2022
- Volume: 15
- Issue: 3.3
- 16
- 6386
- Pages: 36-41
Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures
- Year: 2022
- Volume: 15
- Issue: 3.3
- 26
- 6673
- Pages: 31-35
Influence of the initial surface state on the ripple formation induced by O2+ sputtering of Si
- Year: 2022
- Volume: 15
- Issue: 3.3
- 32
- 6979
- Pages: 8-12
Study of recombination and transport properties of a-Si:H(i)/ μc-Si:H(n) contact system for crystalline silicon solar cells
- Year: 2022
- Volume: 15
- Issue: 3.2
- 18
- 6307
- Pages: 150-154
Study of quasi 1-D silicon nanostructures adsorption properties
- Year: 2022
- Volume: 15
- Issue: 3.2
- 57
- 6588
- Pages: 10-15
Сurrent-voltage characteristics and photoelectric properties of por-Si/Si-p/Si-n diodes with different porous layer thickness
- Year: 2022
- Volume: 15
- Issue: 3.1
- 18
- 6754
- Pages: 143-148
Influence of current density, anodization time, and illumination on the thickness of porous silicon in wafers with the built-in p–n junction and its photoluminescence
- Year: 2022
- Volume: 15
- Issue: 3.1
- 23
- 6387
- Pages: 137-142
Structures and electrical conductance at the initial stages of magnesium growth on Si(111)-Pb surface
- Year: 2022
- Volume: 15
- Issue: 3.1
- 12
- 6759
- Pages: 107-112
Giant lateral photovoltaic effect in the TiO2/SiO2/p-Si heterostructure
- Year: 2022
- Volume: 15
- Issue: 3.1
- 36
- 7512
- Pages: 32-37
Electronic structure and optical properties of Ca2Si films grown on silicon different oriented substrates and calculated from first principles
- Year: 2022
- Volume: 15
- Issue: 3.1
- 42
- 7014
- Pages: 16-21
Formation, structure, and optical properties of singlephase CaSi and CaSi2 films on Si substrates
- Year: 2022
- Volume: 15
- Issue: 3.1
- 88
- 7438
- Pages: 9-15
Contribution of internal ionization processes in semiconductors to radiative losses of relativistic electrons
- Year: 2020
- Volume: 13
- Issue: 3
- 45
- 9822
- Pages: 7-14
The efficiency of solar energy conversion by the CdS/por-Si/p-Si heterostructure: the dopant effect
- Year: 2020
- Volume: 13
- Issue: 2
- 38
- 9722
- Pages: 17-26
Properties of the semiconductor structure with a p–n-junction created in a porous silicon film under laser radiation
- Year: 2018
- Volume: 11
- Issue: 1
- 31
- 10698
- Pages: 18-25
The Frenkel pairs formation in the silicon under high energy electron and proton irradiation
- Year: 2011
- Issue: 2
- 1
- 10486
- Pages: 13-21
The features of defect formation in silicon under molecular ion bombardment
- Year: 2012
- Issue: 3
- 0
- 10412
- Pages: 64-70
Improvement and stabilization of optical characteristics of the porous silicon
- Year: 2013
- Issue: 2
- 660
- 10724
- Pages: 130-136