Articles by keywords "кремний"
Marker ink based dye as a tool for intravital high-resolution visualization of cells on a silicon
- Year: 2025
- Volume: 18
- Issue: 3.2
- 1
- 119
- Pages: 269-274
Localized Ga droplets formation on nanopatterned silicon substrates
- Year: 2025
- Volume: 18
- Issue: 3.2
- 1
- 139
- Pages: 57-59
Morphological features of CVD-grown Si nanostructures in meso- and macroporous silicas
- Year: 2025
- Volume: 18
- Issue: 3.1
- 0
- 122
- Pages: 252-257
Structural and optical properties of InP layers obtained by plasma-enhanced atomic layer deposition at different temperatures
Uvarov A.V.
Baranov A.I.
Maksimova A.A.
Vyacheslavova E.A.
Pozdeev V.A.
Mikhaylov O.P.
Nikitina E.V.
Gudovskikh A.S.
- Year: 2025
- Volume: 18
- Issue: 3.1
- 2
- 139
- Pages: 247-251
Investigation of second harmonic generation in spherical mesoporous Si/SiO2 nanoparticles on gold
- Year: 2025
- Volume: 18
- Issue: 3.1
- 1
- 146
- Pages: 191-194
Black silicon formation using cryogenic etching and photoresist layer
Vyacheslavova E.A.
Mokhov D.V.
Uvarov A.V.
Maksimova A.A.
Mikhaylov O.P.
Baranov A.I.
Gudovskikh A.S.
- Year: 2025
- Volume: 18
- Issue: 3.1
- 1
- 145
- Pages: 182-186
Composition and properties of porous silicon nanoparticles with deposited cinnarizine
- Year: 2025
- Volume: 18
- Issue: 3.1
- 1
- 153
- Pages: 99-104
Modification of silicon nanowires with silver nanoparticles for gas sensor applications
- Year: 2025
- Volume: 18
- Issue: 3.1
- 0
- 149
- Pages: 81-84
Copper deposition onto porous silicon by vacuum thermal evaporation
Kim K.B.
Chernenko S.S.
Niftaliev S.I.
Frolova V.E.
Grechkina M.V.
Grigoryan G.S.
Belokopytov D.O.
Chukavin A.I.
Lenshin A.S.
- Year: 2025
- Volume: 18
- Issue: 3.1
- 0
- 152
- Pages: 59-64
Si-based photodetector with an Mg2Si contact layer for SWIR range
Chernev I.M.
Subbotin E.Yu.
Kozlov A.G.
Sinotova S.A.
Prikhodchenko A.V.
Lembikov A.O.
Prokopeva G.A.
Goroshko D.L.
Galkin N.G.
- Year: 2025
- Volume: 18
- Issue: 3.1
- 0
- 148
- Pages: 53-58
Influence of the growth regime on the transport properties of doped Mg2Si films
Subbotin E.Yu.
Udilov A.D.
Prokopeva G.A.
Goroshko D.L.
Kozlov A.G.
Chernev I.M.
Lisenkov O.E.
Khoroshilov D.A.
Sinotova S.A.
Galkin N.G.
- Year: 2025
- Volume: 18
- Issue: 3.1
- 0
- 172
- Pages: 40-43
Synthesis of Mg2Si-based core-shell nanowires
Subbotin E.Yu.
Kozlov A.G.
Pavlov Dmitrii V.
Lisenkov O.E.
Udilov A.D.
Goroshko D.L.
Poliakov M.V.
Volkova L.S.
Prokopeva G.A.
Chernev I.M.
Khoroshilov D.A.
- Year: 2025
- Volume: 18
- Issue: 3.1
- 1
- 145
- Pages: 36-39
Ordered GaAs NW growth on Si(111) substrates modified by two-step FIB treatment
Shandyba N.A.
Eremenko M.M.
Dukhan D.D.
Chernenko N.E.
Kirichenko D.V.
Kugaevsky A.D.
Makhov I.S.
Kryzhanovskaya N.V.
Balakirev S.V.
Solodovnik M.S.
- Year: 2025
- Volume: 18
- Issue: 3.1
- 0
- 183
- Pages: 19-22
Memristor effect in heterostructures based on gallium nitride nanowires on silicon
- Year: 2025
- Volume: 18
- Issue: 4
- 7
- 238
- Pages: 9-20
The influence of hole states on the electronic and electrostatic properties of 2D layers based on the silicon-germaniumsilicon heterostructure
- Year: 2025
- Volume: 18
- Issue: 2
- 28
- 3402
- Pages: 22-29
Influence of Ge nanolayers on the resistive switching effect in amorphous hydrogenated silicon based structures
- Year: 2025
- Volume: 18
- Issue: 1.1
- 5
- 3369
- Pages: 134-139
Fluorescence of hybrid structures based on carbon dots and GaP, GaN, Si nanowires
Kozko I.A.
Karaseva E.P.
Svinkin N.А.
Rider М.А.
Vyacheslavova E.A.
Gridchin V.O.
Fedorov V.V.
Kondratev V.M.
Bolshakov A.D.
- Year: 2025
- Volume: 18
- Issue: 1.1
- 11
- 3415
- Pages: 77-82
Study of GaPN(As) layers grown by molecular beam epitaxy on silicon substrates
- Year: 2024
- Volume: 17
- Issue: 3.2
- 12
- 2413
- Pages: 275-278
Nonlinear optical phenomena in mesoporous SiO2 and Si/SiO2 nanoparticles
Mastalieva V.A.
Neplokh V.V.
Aybush A.V.
Stovpiaga E.Yu.
Eurov D.A.
Vinnichenko M.Ya.
Karaulov D.A.
Kirilenko D.A.
Golubev V.G.
Smirnov A.N.
Makarov S.V.
Kurdyukov D.A.
Mukhin I.S.
- Year: 2024
- Volume: 17
- Issue: 3.2
- 16
- 2357
- Pages: 207-211
The electronic band structure of hexagonal silicon polytypes
- Year: 2024
- Volume: 17
- Issue: 4
- 51
- 3554
- Pages: 9-19
Effect of diameter on lattice thermal conductivity of α-FeSi2 and ε-FeSi nanowires
- Year: 2024
- Volume: 17
- Issue: 3.2
- 10
- 2465
- Pages: 107-111
The quest for direct band beta iron disilicide: collaboration of theoretical and experimental approaches
- Year: 2024
- Volume: 17
- Issue: 3.2
- 4
- 2572
- Pages: 103-106
Mg2Si synthesis on silicon crystals with different aspect ratio
Subbotin E.Yu.
Kozlov A.G.
Goroshko D.L.
Chernev I.M.
Khoroshilov D.A.
Lisenkov O.E.
Zhizhchenko A.Yu.
Kitan' S.A.
Galkin N.G.
- Year: 2024
- Volume: 17
- Issue: 3.2
- 22
- 2480
- Pages: 31-35
Deposition of tin and gold on porous silicon by vacuum thermal spraying
- Year: 2024
- Volume: 17
- Issue: 3.2
- 18
- 2509
- Pages: 20-24
Autostainer feature for multielectrode arrays: proof-of-concept
- Year: 2024
- Volume: 17
- Issue: 3.1
- 17
- 2557
- Pages: 320-324
Gallium phosphide/black silicon heterojunction solar cells
- Year: 2024
- Volume: 17
- Issue: 3.1
- 20
- 2525
- Pages: 199-203
Effect of light incidence angle on the characteristics of silicon solar cells with different texturing
- Year: 2024
- Volume: 17
- Issue: 3.1
- 7
- 2462
- Pages: 134-137
Combined approach of patterning on SiO2/Si substrate using ion beam and chemical wet etching
- Year: 2024
- Volume: 17
- Issue: 3.1
- 15
- 2545
- Pages: 75-78
The effect of the rate of temperature change on the thermomigration of liquid inclusions in silicon
- Year: 2024
- Volume: 17
- Issue: 3.1
- 24
- 2719
- Pages: 23-27
Numerical simulation of the tunnel effect in the gallium nitride heterostructure on silicon
- Year: 2024
- Volume: 17
- Issue: 3
- 27
- 3174
- Pages: 46-56
Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy
- Year: 2024
- Volume: 17
- Issue: 1.1
- 46
- 3157
- Pages: 62-67
Size effects in molecular dynamics simulations of a fullerene ion impact on the silicon surface
- Year: 2023
- Volume: 16
- Issue: 4
- 25
- 4484
- Pages: 76-85
Study of morphology and composition of nanoscale AlGaN heterostructures obtained by PA MBE technique on the silicon substrates with the use of porous silicon as buffer layer
- Year: 2023
- Volume: 16
- Issue: 3.2
- 16
- 3882
- Pages: 249-254
Photo-assisted adsorption of enzyme molecules onto a surface-modified silicon substrate
- Year: 2023
- Volume: 16
- Issue: 3.1
- 7
- 4183
- Pages: 444-448
Heterojunction solar cells based on nanostructured black silicon
- Year: 2023
- Volume: 16
- Issue: 3.1
- 17
- 4066
- Pages: 434-438
Exciton dynamics characterization by electrochemical impedance spectroscopy of CsPbBr3(I3) perovskite nanocrystals for photovoltaic application
- Year: 2023
- Volume: 16
- Issue: 3.1
- 24
- 4118
- Pages: 278-283
Towards nanowire-based selective vapor sensing with an aid of impedance spectroscopy
- Year: 2023
- Volume: 16
- Issue: 3.1
- 12
- 3944
- Pages: 151-156
Effect of plasma-chemical treatment of Si(001) substrates on the subsequent epitaxial growth of GaAs
- Year: 2023
- Volume: 16
- Issue: 3.1
- 21
- 4044
- Pages: 122-127
Mg2Si film on Si(111) prepared by Ultra-Fast Mg reactive deposition: crystal structure and thermoelectric properties
Chernev I.M.
Subbotin E.Yu.
Argunov E.V.
Kozlov A.G.
Gerasimenko A.V.
Galkin N.G.
Poliakov M.V.
Volkova L.S.
Dudin A.A.
Gouralnik A.S.
- Year: 2023
- Volume: 16
- Issue: 3.1
- 52
- 4998
- Pages: 106-111
A change in the morphology of multilayer porous silicon with a stepwise decrease in the etching current density
Lenshin A.S.
Peshkov Ya.A.
Chernousova O.V.
Kannykin S.V.
Grechkina M.V.
Minakov D.A.
Zolotukhin D.S.
Agapov B.L.
- Year: 2023
- Volume: 16
- Issue: 3.1
- 9
- 3816
- Pages: 100-105
Light-emitting and light-detecting perovskite electrochemical cell on silicon
- Year: 2023
- Volume: 16
- Issue: 3.1
- 11
- 3914
- Pages: 94-99
Ultrathin Cr and Fe monosilicides on Si(111) substrate: formation, optical and thermoelectrical properties
Galkin K.N.
Chernev I.M.
Subbotin E.Yu.
Maslov A.M.
Kropachev O.V.
Goroshko D.L.
Balagan S.A.
Argunov E.V.
Gutakovsky A.K.
Galkin N.G.
- Year: 2023
- Volume: 16
- Issue: 3.1
- 24
- 4470
- Pages: 84-89
The features in the formation of oxide porous structures based on SiO2–SnOх
- Year: 2023
- Volume: 16
- Issue: 3.1
- 22
- 4302
- Pages: 10-15
Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics
- Year: 2023
- Volume: 16
- Issue: 1.3
- 11
- 4424
- Pages: 176-181
Curvature and bow of III-N HEMT structures during epitaxy on silicon substrates
- Year: 2023
- Volume: 16
- Issue: 1.3
- 30
- 4288
- Pages: 50-54
Compositions based on porous silicon and nickel oxide obtained by cooperative synthesis
- Year: 2023
- Volume: 16
- Issue: 1.1
- 19
- 4795
- Pages: 393-397
Дислокационная фотолюминесценция в самоимплантированном кремнии с различными ориентациями поверхности
- Year: 2023
- Volume: 16
- Issue: 1.1
- 14
- 4576
- Pages: 162-166
Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface
Reznik R.R.
Gridchin V.O.
Kotlyar K.P.
Dragunova A.S.
Kryzhanovskaya N.V.
Samsonenko Yu.B.
Soshnikov I.P.
Khrebtov A.I.
Cirlin G.E.
- Year: 2023
- Volume: 16
- Issue: 1.1
- 24
- 4495
- Pages: 153-157
Study of quasi 1D silicon nanostructures adsorption properties via impedance spectroscopy
Kondratev V.M.
Vyacheslavova E.A.
Morozov Ivan A.
Nalimova S.S.
Moshnikov V.A.
Gudovskikh A.S.
Bolshakov A.D.
- Year: 2023
- Volume: 16
- Issue: 1.1
- 29
- 4737
- Pages: 43-48
Radiation of high-energy electrons when channeling in the bent silicon and germanium monocrystals
- Year: 2023
- Volume: 16
- Issue: 1
- 34
- 6054
- Pages: 33-50
Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates
- Year: 2022
- Volume: 15
- Issue: 3.3
- 31
- 5240
- Pages: 311-314
Optical studies of InP nanostructures monolithically integrated in Si (100)
- Year: 2022
- Volume: 15
- Issue: 3.3
- 21
- 5185
- Pages: 260-264
Plasma deposited indium phosphide and its electrophysical properties
- Year: 2022
- Volume: 15
- Issue: 3.3
- 42
- 5834
- Pages: 123-127
Investigation of degradation characteristics of photosensitive structures with porous silicon
- Year: 2022
- Volume: 15
- Issue: 3.3
- 11
- 5445
- Pages: 82-85
Study of FIB-modified silicon areas by AFM and Raman spectroscopy
Nikitina L.S.
Lakhina E.A.
Eremenko M.M.
Balakirev S.V.
Chernenko N.E.
Shandyba N.A.
Solodovnik M.S.
Ageev O.A.
- Year: 2022
- Volume: 15
- Issue: 3.3
- 23
- 5030
- Pages: 59-63
Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si
- Year: 2022
- Volume: 15
- Issue: 3.3
- 24
- 5044
- Pages: 54-58
Effect of FIB-modification of Si(111) surface on GaAs nanowire growth
- Year: 2022
- Volume: 15
- Issue: 3.3
- 15
- 5111
- Pages: 36-41
Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures
- Year: 2022
- Volume: 15
- Issue: 3.3
- 26
- 5380
- Pages: 31-35
Influence of the initial surface state on the ripple formation induced by O2+ sputtering of Si
- Year: 2022
- Volume: 15
- Issue: 3.3
- 31
- 5642
- Pages: 8-12
Study of recombination and transport properties of a-Si:H(i)/ μc-Si:H(n) contact system for crystalline silicon solar cells
- Year: 2022
- Volume: 15
- Issue: 3.2
- 17
- 5201
- Pages: 150-154
Study of quasi 1-D silicon nanostructures adsorption properties
Kondratev V.M.
Vyacheslavova E.A.
Morozov Ivan A.
Nalimova S.S.
Moshnikov V.A.
Gudovskikh A.S.
Bolshakov A.D.
- Year: 2022
- Volume: 15
- Issue: 3.2
- 57
- 5355
- Pages: 10-15
Сurrent-voltage characteristics and photoelectric properties of por-Si/Si-p/Si-n diodes with different porous layer thickness
- Year: 2022
- Volume: 15
- Issue: 3.1
- 17
- 5556
- Pages: 143-148
Influence of current density, anodization time, and illumination on the thickness of porous silicon in wafers with the built-in p–n junction and its photoluminescence
- Year: 2022
- Volume: 15
- Issue: 3.1
- 20
- 5176
- Pages: 137-142
Structures and electrical conductance at the initial stages of magnesium growth on Si(111)-Pb surface
- Year: 2022
- Volume: 15
- Issue: 3.1
- 12
- 5555
- Pages: 107-112
Giant lateral photovoltaic effect in the TiO2/SiO2/p-Si heterostructure
- Year: 2022
- Volume: 15
- Issue: 3.1
- 31
- 6161
- Pages: 32-37
Electronic structure and optical properties of Ca2Si films grown on silicon different oriented substrates and calculated from first principles
Galkin K.N.
Kropachev O.V.
Maslov A.M.
Chernev I.M.
Subbotin E.Yu.
Galkin N.G.
Alekseev A.Yu.
Migas D.B.
- Year: 2022
- Volume: 15
- Issue: 3.1
- 42
- 5757
- Pages: 16-21
Formation, structure, and optical properties of singlephase CaSi and CaSi2 films on Si substrates
Galkin N.G.
Galkin K.N.
Kropachev O.V.
Chernev I.M.
Dotsenko S.A.
Goroshko D.L.
Subbotin E.Yu.
Alekseev A.Yu.
Migas D.B.
- Year: 2022
- Volume: 15
- Issue: 3.1
- 80
- 6004
- Pages: 9-15
Contribution of internal ionization processes in semiconductors to radiative losses of relativistic electrons
- Year: 2020
- Volume: 13
- Issue: 3
- 45
- 8581
- Pages: 7-14
The efficiency of solar energy conversion by the CdS/por-Si/p-Si heterostructure: the dopant effect
- Year: 2020
- Volume: 13
- Issue: 2
- 36
- 8386
- Pages: 17-26
Properties of the semiconductor structure with a p–n-junction created in a porous silicon film under laser radiation
- Year: 2018
- Volume: 11
- Issue: 1
- 31
- 9536
- Pages: 18-25
The Frenkel pairs formation in the silicon under high energy electron and proton irradiation
- Year: 2011
- Issue: 2
- 0
- 9323
- Pages: 13-21
The features of defect formation in silicon under molecular ion bombardment
- Year: 2012
- Issue: 3
- 0
- 9284
- Pages: 64-70
Improvement and stabilization of optical characteristics of the porous silicon
- Year: 2013
- Issue: 2
- 660
- 9687
- Pages: 130-136