Articles by keywords "luminescence"

Optimizing the front contact grid parameters of рhotovoltaic laser power converters

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 8
  • 2996
  • Pages: 111-116

Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 14
  • 3001
  • Pages: 105-110

Impact of geometry on semiconductor quantum dots optical properties

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 14
  • 2947
  • Pages: 88-94

Optical characteristics of Hg0.7Cd0.3Te films with etched graded-gap surface layer

Structure growth, surface, and interfaces
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 19
  • 3127
  • Pages: 34-39

Fluorescent properties of boron nitride quantum dots depending on functionalizing ligands

Biophysics and medical physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 18
  • 1893
  • Pages: 297-300

Luminescence enhancement in inelastic tunnelling of electrons by changing the geometry of the tunnelling contact

Physical optics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 11
  • 2211
  • Pages: 236-240

Growth of long core-shell InGaN nanowires by plasma-assisted molecular beam epitaxy with gradually increasing substrate temperature

Physics of molecules, clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 15
  • 1750
  • Pages: 143-147

Random lasing in hydrothermal ZnO structures

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 14
  • 2047
  • Pages: 36-41

Influence of the wet-chemical treatment on the optical and structural properties of core-shell InGaN nanowires

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 17
  • 2430
  • Pages: 306-309

Photoluminescence of self-induced InAs nanowires diluted with nitrogen

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 12
  • 2286
  • Pages: 34-37

Creation of optical isolated GaP(NAs) microcavities on silicon

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 29
  • 2889
  • Pages: 25-35

Formation and light-emitting properties of ion-synthesized Ga2O3 nanoinclusions in the Al2O3/Si matrix

Novel materials
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 19
  • 2837
  • Pages: 171-177

Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 21
  • 2723
  • Pages: 143-148

Electroluminescence of narrow-gap InAs/InAs1–ySby/InAsSbP heterostructures with y = 0.07–0.12

Heterostructures, superlattices, quantum wells
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 27
  • 2780
  • Pages: 77-82

Luminescence in nanostructures with compensated quantum wells under optical and electrical pumping

Heterostructures, superlattices, quantum wells
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 26
  • 3276
  • Pages: 68-76

Electron irradiation as a method for controlling luminescence of hexagonal boron nitride

Structure growth, surface, and interfaces
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 33
  • 3160
  • Pages: 49-54

Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers

Structure growth, surface, and interfaces
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 26
  • 3327
  • Pages: 43-48

Ultraviolet photoluminescence enhancement of zinc oxide nanocrystals in colloidal mixtures with spark discharge aluminum nanoparticles

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 15
  • 3939
  • Pages: 261-266

Quantum dot-induced photoluminescence enhancement of InGaN nanowires

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 11
  • 3606
  • Pages: 255-260

Photoluminescence anisotropy in hybrid nanostructures based on gallium phosphide nanowire and 2D transition metal dichalcogenides

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 15
  • 3548
  • Pages: 130-136

Features of photovoltaic cell degradation of solar power plants in Hong Kong and Saint Petersburg

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 4
  • 3669
  • Pages: 44-49

Luminescence kinetic of CsPbBr3 quantum dots

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 32
  • 3549
  • Pages: 321-324

Towards versatile photonics based on GaP nanowires decorated with carbon dots

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 22
  • 3722
  • Pages: 187-192

Deep-Level Emission Tailoring in ZnO Nanostructures Grown via Hydrothermal Synthesis

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 19
  • 3595
  • Pages: 176-181

The features in the formation of oxide porous structures based on SiO2–SnOх

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 22
  • 3870
  • Pages: 10-15

Influence of stimulated interband emission on terahertz photoluminescence in n-type gallium arsenide layers

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3
  • 214
  • 4477
  • Pages: 29-38

Synthesis and PL study of Sr3 (VO4 ) 2 :Eu3+ phosphor for W-LED application

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 2
  • 30
  • 4716
  • Pages: 61-67

Multi-state lasing in microdisk lasers with InAs/GaAs quantum dots

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 26
  • 3989
  • Pages: 157-162

Suppression of molecular anyon states in the magneto-photoluminescence spectra of InP/GaInP2 quantum dots at a temperature of 30 K

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 17
  • 3904
  • Pages: 112-116

Interband photoluminescence of InAs(P)/Si nanowires

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 33
  • 4091
  • Pages: 101-107

Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 22
  • 4160
  • Pages: 33-38

Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 39
  • 3883
  • Pages: 14-19

Thermally induced depolarization of fluorescence of matrix-isolated MoS2 nanodots

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 7
  • 4037
  • Pages: 356-362

Дислокационная фотолюминесценция в самоимплантированном кремнии с различными ориентациями поверхности

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 13
  • 4209
  • Pages: 162-166

Near-infrared photoluminescence in n-GaAs/AlGaAs quantum wells with different locations of compensating acceptor impurity

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 4
  • 84
  • 5252
  • Pages: 32-43

Photoluminescence from lead halide perovskite superlattices

Physics of molecules
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 27
  • 4491
  • Pages: 326-329

Aluminum nanostructures produced by aerosol dry printing for ultraviolet photoluminescence enhancement

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 19
  • 4988
  • Pages: 276-280

Peculiarities of the luminescence response of two-dimensional photonic crystals with ordered Ge(Si) nanoislands obtained using different ordering approaches

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 15
  • 4518
  • Pages: 188-193

Development of technological methods for fabrication high-density luminescent structures based on up-conversion NaYF4:Yb3+, Er3+ particles

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 24
  • 4890
  • Pages: 138-141

Photoluminescent α-NaYbF4:Er0.02Ce0.02Zn0.1 nanoparticles for bioimaging in visible and infrared ranges

Biophysics and medical physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 5
  • 4647
  • Pages: 306-310

Hollow-core antiresonant optical fiber activated with YAG:Yb3+

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 10
  • 4774
  • Pages: 240-245

Optimization of InGaN-based luminescent heterostructures by genetic algorithm

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 25
  • 4864
  • Pages: 21-24

Investigation of temperature stability of germanium nanowires obtained by electrochemical deposition

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 29
  • 4859
  • Pages: 59-64

The application of barium fluoride luminescence: сhallenges and prospects

Condensed matter physics
  • Year: 2019
  • Volume: 12
  • Issue: 1
  • 46
  • 9463
  • Pages: 11-27

Effect of gamma radiation on luminescence and photoconductivity of MEH-PPV – lead sulfide nanocomposite

Condensed matter physics
  • Year: 2018
  • Volume: 11
  • Issue: 4
  • 25
  • 9018
  • Pages: 35-46

Effect of gamma radiation on the thin nanocomposite MEH-PPV/C60 films

Condensed matter physics
  • Year: 2018
  • Volume: 11
  • Issue: 4
  • 35
  • 9039
  • Pages: 24-34

Excitonic photolumenescence kinetics of GaAs/AlGaAs structures with shallow quantum wells at low temperatures

Atom physics and physics of clusters and nanostructures
  • Year: 2010
  • Issue: 3
  • 0
  • 8465
  • Pages: 58-62

Exitons condensation in quasi-2D SiGe layers - Si/Si1-xGex/Si heterostructures

Condensed matter physics
  • Year: 2010
  • Issue: 3
  • 0
  • 8799
  • Pages: 7-13

Gamma-induced effect on the luminescence of nanocomposites of MEH-PPV conductive polymer with lead sulphide quantum dots

Condensed matter physics
  • Year: 2018
  • Volume: 11
  • Issue: 2
  • 26
  • 8810
  • Pages: 41-48

The structure of ZnTPP, ZnTPP-C60 thin films and X-ray effect on their photoluminescence

Condensed matter physics
  • Year: 2018
  • Volume: 11
  • Issue: 2
  • 33
  • 9216
  • Pages: 26-40

Properties of the semiconductor structure with a p–n-junction created in a porous silicon film under laser radiation

Condensed matter physics
  • Year: 2018
  • Volume: 11
  • Issue: 1
  • 31
  • 9160
  • Pages: 18-25

Auger-recombination effect on the nonequilibrium charge carriers concentration in InGaAsSb /AlGaAsSb quantum wells

Atom physics and physics of clusters and nanostructures
  • Year: 2016
  • Issue: 4
  • 116
  • 8774
  • Pages: 66-76

Impurity assisted terahertz luminescence in quantum well nanostructures under interband photoexсitation

Atom physics and physics of clusters and nanostructures
  • Year: 2016
  • Issue: 4
  • 88
  • 8671
  • Pages: 56-65

Synthesis and luminescence properties OF Ca5(PO4)3Cl:Eu2+ phosphor for solid state lighting

Physical materials technology
  • Year: 2016
  • Issue: 1
  • 271
  • 9143
  • Pages: 41-47

Thermal resistanсe and nonuniform distribution of electroluminescence and temperature in high-power AlGaInN light-emitting diodes

Experimental technique and devices
  • Year: 2015
  • Issue: 2
  • 353
  • 8667
  • Pages: 74-83

Near- and far-infrared emission from GaAs/AlGaAs quantum wells under interband optical excitation

Condensed matter physics
  • Year: 2013
  • Issue: 4
  • 429
  • 9192
  • Pages: 109-114

A final DF-CО2 amplifier of the multi-terawatt picosecond 10 micrometer laser system

Experimental technique and devices
  • Year: 2013
  • Issue: 4
  • 330
  • 8651
  • Pages: 48-55

The annealing effect on green X-ray  luminescence of zinc oxide powders

Condensed matter physics
  • Year: 2013
  • Issue: 4
  • 509
  • 8982
  • Pages: 21-30

Photoluminescence and Raman scattering in periodic arrays of silicon nanoinclusions in zirconia dioxide

Atom physics and physics of clusters and nanostructures
  • Year: 2010
  • Issue: 1
  • 0
  • 8462
  • Pages: 71-78

The effect of the ion-exchange treatment and gamma-irradiation on the spectra of phosphate glasses doped with europium

Physical materials technology
  • Year: 2011
  • Issue: 4
  • 0
  • 8265
  • Pages: 137-142

Energy spectrum and optical transitions in CdHgTe nanoheterostructures

Atom physics and physics of clusters and nanostructures
  • Year: 2012
  • Issue: 2
  • 1
  • 8618
  • Pages: 69-73

Features of energy spectra and properties of polycrystalline Pb[1-x]Cd[x]Se films formed on calcium fluoride and glass substrates

Condensed matter physics
  • Year: 2012
  • Issue: 2
  • 0
  • 8300
  • Pages: 7-17

Development features of degradation processes in high-power blue InGaN/GaN light-emitting diodes

Experimental technique and devices
  • Year: 2012
  • Issue: 3
  • 0
  • 8497
  • Pages: 45-48

Improvement and stabilization of optical characteristics of the porous silicon

Physical materials technology
  • Year: 2013
  • Issue: 2
  • 660
  • 9358
  • Pages: 130-136