Articles by keywords "SEM"
Investigation of self-hybridized waveguide exciton-polaritons in the two-dimensional antiferromagnet CrSBr at room temperature
- Year: 2026
- Volume: 19
- Issue: 1.1
- 0
- 33
- Pages: 146-150
Beam divergence of surface-emitting semiconductor laser with resonator based on two-dimensional photonic crystal
- Year: 2026
- Volume: 19
- Issue: 1.1
- 0
- 34
- Pages: 86-91
Temperature-dependent infrared photoluminescence study of GeSn/Si and GeSiSn/Si multiple quantum wells
- Year: 2026
- Volume: 19
- Issue: 1.1
- 0
- 34
- Pages: 45-50
Dependence of optical spectra of bulk-doped cadmium sulfide semiconductor nanocrystals on their geometrical dimensions and number of charge carriers
- Year: 2026
- Volume: 19
- Issue: 1
- 8
- 383
- Pages: 158-169
High-sensitivity and low-noise GaN-based ultraviolet photodetectors
- Year: 2025
- Volume: 18
- Issue: 3.2
- 3
- 594
- Pages: 196-199
Electrostatic control of correlated phases in spatially inhomogeneous two-dimensional moiré structures
- Year: 2025
- Volume: 18
- Issue: 3.2
- 8
- 717
- Pages: 49-52
Effect of rapid thermal annealing on the properties of GaPN(As)-based heterostructures grown on silicon substrates
- Year: 2025
- Volume: 18
- Issue: 3.2
- 6
- 662
- Pages: 45-48
Mechanism of resistive state switching in a non-filamentary memory device made of halide perovskite
- Year: 2025
- Volume: 18
- Issue: 3.2
- 12
- 707
- Pages: 16-23
Effect of GaAs buffer layer on the characteristics of GaAs nanowires grown by molecular beam epitaxy on Si(111) substrates
- Year: 2025
- Volume: 18
- Issue: 3.1
- 4
- 681
- Pages: 152-155
Influence of the growth regime on the transport properties of doped Mg2Si films
- Year: 2025
- Volume: 18
- Issue: 3.1
- 6
- 783
- Pages: 40-43
The length distribution of nanowires with forward and backward surface diffusion
- Year: 2025
- Volume: 18
- Issue: 4
- 14
- 834
- Pages: 34-47
Collective excitations in the bulk doped semiconductor cadmium sulfide nanocrystals
- Year: 2025
- Volume: 18
- Issue: 2
- 20
- 3928
- Pages: 144-161
Spin-lattice relaxation processes of nuclear spins in GaAs:Mn
- Year: 2025
- Volume: 18
- Issue: 1.1
- 57
- 4431
- Pages: 6-10
Study of GaPN(As) layers grown by molecular beam epitaxy on silicon substrates
- Year: 2024
- Volume: 17
- Issue: 3.2
- 16
- 2940
- Pages: 275-278
The Sivers asymmetry in deep inelastic charged lepton scattering on a transverse polarized proton target
- Year: 2024
- Volume: 17
- Issue: 4
- 20
- 3320
- Pages: 130-137
Hierarchical self-assembly of SiO2-SnO2 nanoand microstructures in combined sol-gel systems
- Year: 2024
- Volume: 17
- Issue: 3.2
- 14
- 2932
- Pages: 42-45
Mg2Si synthesis on silicon crystals with different aspect ratio
- Year: 2024
- Volume: 17
- Issue: 3.2
- 25
- 3034
- Pages: 31-35
Photocatalytic properties of Ag-AgBr nanostructures formed by ion-exchange in photo-thermo-refractive glass for water-dye degradation
- Year: 2024
- Volume: 17
- Issue: 3.1
- 7
- 3199
- Pages: 302-305
GaN based ultraviolet narrowband photodetectors
- Year: 2024
- Volume: 17
- Issue: 3.1
- 22
- 3177
- Pages: 220-223
Quantum state preparation with optical injection: Issue of intersymbol interference
- Year: 2024
- Volume: 17
- Issue: 3.1
- 8
- 3192
- Pages: 173-177
Development of semitransparent Perovskite Solar Cells with double electron transport layer and modified top electrode
- Year: 2024
- Volume: 17
- Issue: 3.1
- 26
- 3444
- Pages: 14-18
Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range
- Year: 2024
- Volume: 17
- Issue: 1.1
- 21
- 3615
- Pages: 143-148
Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy
- Year: 2024
- Volume: 17
- Issue: 1.1
- 50
- 3689
- Pages: 62-67
Dynamics of electron-nuclear spin system in GaAs:Mn epitaxial layers
- Year: 2024
- Volume: 17
- Issue: 1.1
- 36
- 3955
- Pages: 31-36
A generative adversarial network as the basis for a semi-inclusive deep inelastic lepton scattering generator on a polarized proton
- Year: 2024
- Volume: 17
- Issue: 1
- 92
- 4118
- Pages: 93-102
Simulation of semi-inclusive deep inelastic lepton scattering on a proton at energies of 20 – 100 GeV on the basis of the Generative-Adversarial Neural Network
- Year: 2023
- Volume: 16
- Issue: 4
- 50
- 4299
- Pages: 189-197
Current – voltage characteristics of MaPbI3 perovskite films formed by the single-stage spin-coat method
- Year: 2023
- Volume: 16
- Issue: 4
- 43
- 5181
- Pages: 9-19
Creation of an automated system for adjusting the position of the laser radiation axis for the air communication channel
- Year: 2023
- Volume: 16
- Issue: 3.2
- 9
- 4102
- Pages: 377-382
Photoluminescence anisotropy in hybrid nanostructures based on gallium phosphide nanowire and 2D transition metal dichalcogenides
- Year: 2023
- Volume: 16
- Issue: 3.2
- 15
- 4567
- Pages: 130-136
The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
- Year: 2023
- Volume: 16
- Issue: 3.1
- 15
- 4331
- Pages: 439-443
Germanium polytypes formation on AlGaAs nanowire surface
- Year: 2023
- Volume: 16
- Issue: 3.1
- 15
- 4332
- Pages: 289-293
Research of the photoelectric parameters of ZnO/Cu2O heterojunction solar cells
- Year: 2023
- Volume: 16
- Issue: 3.1
- 13
- 4796
- Pages: 221-226
Temperature dependence of the energy spectrum of metamorphic InSb/In(Ga,Al)As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy
- Year: 2023
- Volume: 16
- Issue: 3.1
- 33
- 4717
- Pages: 47-52
Development of the surface morphology of germanium upon irradiation with gallium ions
- Year: 2023
- Volume: 16
- Issue: 3.1
- 24
- 5343
- Pages: 21-25
A theoretical study of macromolecule interaction with the quasi-free-standing and epitaxial graphene formed on the silicon carbide polytypes
- Year: 2023
- Volume: 16
- Issue: 3
- 212
- 5300
- Pages: 87-94
Influence of stimulated interband emission on terahertz photoluminescence in n-type gallium arsenide layers
- Year: 2023
- Volume: 16
- Issue: 3
- 216
- 5384
- Pages: 29-38
The plasmon resonance in the cadmium selenide semiconductor nanocrystals with different doping types
- Year: 2023
- Volume: 16
- Issue: 2
- 24
- 5809
- Pages: 27-51
Magnetoresistivity and Hall effect in Weyl semimetal WTe2
- Year: 2023
- Volume: 16
- Issue: 1.3
- 111
- 5617
- Pages: 26-32
Magnetic properties of heterophase film coatings based on a solid solution of cadmium sulfide and iron
- Year: 2023
- Volume: 16
- Issue: 1.2
- 22
- 5413
- Pages: 236-240
Synthesis of semi-polar GaN(11-22) on a nano-patterned Si(113) substrate
- Year: 2023
- Volume: 16
- Issue: 1.2
- 15
- 5090
- Pages: 224-228
Optical properties of single InGaN nanowires with core-shell structure
- Year: 2023
- Volume: 16
- Issue: 1.2
- 48
- 5320
- Pages: 114-120
Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy
- Year: 2023
- Volume: 16
- Issue: 1.1
- 30
- 5356
- Pages: 341-345
Application of conical magnetic rotating fields for controlled colloidal self-assembly
- Year: 2023
- Volume: 16
- Issue: 1.1
- 54
- 5236
- Pages: 205-210
Calculation of correlation lengths in 2D Lennard-Jones fluids
- Year: 2023
- Volume: 16
- Issue: 1.1
- 16
- 5356
- Pages: 197-204
Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface
- Year: 2023
- Volume: 16
- Issue: 1.1
- 26
- 5029
- Pages: 153-157
The two-temperature effect on a semiconducting thermoelastic solid cylinder based on the modified Moore – Gibson – Thompson heat transfer
- Year: 2023
- Volume: 16
- Issue: 1
- 18
- 5792
- Pages: 65-81
Langmuir-Blodgett technology to obtain semi- magnetic photosensitive materials
- Year: 2022
- Volume: 15
- Issue: 3.3
- 27
- 5893
- Pages: 250-254
Experimental study of all-van-der-Waals waveguide polaritons at room temperature
- Year: 2022
- Volume: 15
- Issue: 3.3
- 14
- 5456
- Pages: 223-225
Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
- Year: 2022
- Volume: 15
- Issue: 3.3
- 36
- 5604
- Pages: 157-162
Transport and optical phenomena in two-dimensional Dirac semimetals
- Year: 2022
- Volume: 15
- Issue: 3.3
- 39
- 6692
- Pages: 18-21
Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction
- Year: 2022
- Volume: 15
- Issue: 3.2
- 30
- 5681
- Pages: 145-149
Dependence of light-addressable potentiometric sensor sensitivity on photo-induced processes in Si
- Year: 2022
- Volume: 15
- Issue: 3.2
- 19
- 5304
- Pages: 135-139
Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy
- Year: 2022
- Volume: 15
- Issue: 3.2
- 34
- 5641
- Pages: 75-79
Semipolar GaN layers on nanostructured silicon: technology and properties
- Year: 2022
- Volume: 15
- Issue: 3.1
- 19
- 5897
- Pages: 179-184
Effect of thermal annealing on grain size and phase changes in magnetron titanium oxide films
- Year: 2022
- Volume: 15
- Issue: 3.1
- 34
- 6081
- Pages: 149-154
A dynamic-stochastic approach to the construction and use of predictive models
- Year: 2020
- Volume: 13
- Issue: 1
- 27
- 9120
- Pages: 26-41
A model of new information dissemination in the society
- Year: 2019
- Volume: 12
- Issue: 4
- 62
- 8634
- Pages: 119-134
Fundamental problems of intensive plastic deformation of crystalline solids
- Year: 2013
- Issue: 4
- 1
- 8616
- Pages: 166-169
Morphology of dried nanogel films of bacterial cellulose impregnated with the silver nitrate solution
- Year: 2018
- Volume: 11
- Issue: 1
- 62
- 10427
- Pages: 112-121
Emission gamma tomography of the test fuel assembly for BOR-60 reactor
- Year: 2017
- Volume: 10
- Issue: 4
- 54
- 9029
- Pages: 73-81
Formation of the angular dependence of intensity of the light scattered on the optically dense atomic ensemble
- Year: 2017
- Volume: 10
- Issue: 3
- 133
- 9109
- Pages: 75-83
The topical trends in semiconductor and nanostructure physics, semiconductor opto- and nanoelectronics (on the 18th All-Russion Youth Conference)
- Year: 2017
- Volume: 10
- Issue: 2
- 69
- 9385
- Pages: 123-132
Resultes of 17-th Аll-Russian youth conference on semiconductor and nanoctructure physics and semiconductor opto- and nanoelectronics
- Year: 2016
- Issue: 1
- 243
- 9321
- Pages: 98-108
The semi-markov model for the ‘technological module – storage device’ structure
- Year: 2016
- Issue: 1
- 143
- 9392
- Pages: 16-28
The energy spectrum of PbBi4Te7 on evidence derived from light reflection and absorption coefficients
- Year: 2015
- Issue: 3
- 393
- 9669
- Pages: 9-23
Structural features of indium antimonide quantum dots on the indium arsenide substrate
- Year: 2015
- Issue: 2
- 366
- 10076
- Pages: 11-18
The results of the 16-th All-Russian Youth Conference on Semiconductor and Nanostructure Physics and Semiconductor Opto- and Nanoelectronics
- Year: 2015
- Issue: 1
- 275
- 8984
- Pages: 158-166
Local analysis of semiconductor nanoobjects by scanning tunneling atomic force microscopy
- Year: 2015
- Issue: 1
- 601
- 9867
- Pages: 31-42
The influence of natural irregularities on surface electron scattering
- Year: 2014
- Issue: 4
- 268
- 9668
- Pages: 48-54
he intervalley electron-phonon scattering in the A[III]B[V] crystal
- Year: 2009
- Issue: 2
- 0
- 9496
- Pages: 34-38
The influence of temperature and electric field on emission of carriers out of the InAs/CaAs quantum dots
- Year: 2009
- Issue: 2
- 0
- 8940
- Pages: 11-14
Actual directions of semiconductor physics and nanostructures, semiconductor nano- and optoelectronics (on the 15th All-Russian Youth Conference)
- Year: 2014
- Issue: 1
- 3
- 8813
- Pages: 157-163
Temperature effects upon coherence of semiconductor lasers emission
- Year: 2013
- Issue: 4
- 628
- 10074
- Pages: 93-99
Determinations of electrokinetic properties of semiconducting materials for making nanocathods
- Year: 2011
- Issue: 4
- 0
- 9164
- Pages: 39-43
The Xlllth All-Russian Young-People Conference on Semiconductor Physics and Nanostructures, Semiconductor Opto- and Nanoelectronics
- Year: 2012
- Issue: 1
- 0
- 9171
- Pages: 184-187
The Casimir force pressure onthe dielectric layer in nanoscale solid-state multilayer Al - SiO2 - Si structures
- Year: 2012
- Issue: 3
- 0
- 9191
- Pages: 22-28
Resonance electron scattering by the surface of semiconductor with the natural nonuniformities
- Year: 2013
- Issue: 1
- 534
- 10341
- Pages: 101-107
Slow electrons scattering by fluctuation potential of semiconductor
- Year: 2013
- Issue: 1
- 472
- 9989
- Pages: 93-100
Growing and photoluminescence investigation of silicon-germanium structures doped with erbium on sapphire substrates
- Year: 2013
- Issue: 1
- 559
- 9916
- Pages: 24-28