SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
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    Articles by keywords "semiconductor"

    Investigation of self-hybridized waveguide exciton-polaritons in the two-dimensional antiferromagnet CrSBr at room temperature

    Novel materials
    Kalantaevskii I.E.Gorelkina T.D.Kravtsov V.A.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 10
    • 705
    • Pages: 146-150

    Beam divergence of surface-emitting semiconductor laser with resonator based on two-dimensional photonic crystal

    Optoelectronic and nanoelectronic devices
    Nekrasov A.S.Zolotarev V.V.Oreshko I.V.Slipchenko S.O.Pikhtin N.A.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 9
    • 687
    • Pages: 86-91

    Temperature-dependent infrared photoluminescence study of GeSn/Si and GeSiSn/Si multiple quantum wells

    Heterostructures, superlattices, quantum wells
    Chumanov I.V.Firsov D.D.Kolyada D.V.Komkov O.S.Skvortsov I.V.Mashanov V.I.Loshkarev I.D.Timofeev V.A.
    • Year: 2026
    • Volume: 19
    • Issue: 1.1
    • 11
    • 674
    • Pages: 45-50

    Dependence of optical spectra of bulk-doped cadmium sulfide semiconductor nanocrystals on their geometrical dimensions and number of charge carriers

    Theoretical physics
    Ipatov A.N.Kupriianov G.A.
    • Year: 2026
    • Volume: 19
    • Issue: 1
    • 14
    • 912
    • Pages: 158-169

    High-sensitivity and low-noise GaN-based ultraviolet photodetectors

    Physical optics
    Sinitskaya O.A.Shubina K.Yu.Mizerov A.M.Nikitina E.V.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 5
    • 1073
    • Pages: 196-199

    Electrostatic control of correlated phases in spatially inhomogeneous two-dimensional moiré structures

    Condensed matter physics
    Abramov A.N.Chiglintsev E.Oskolkova T.Bandurin D.A.Iorsh I.V.Chernov A.Kravtsov V.A.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 10
    • 1290
    • Pages: 49-52

    Effect of rapid thermal annealing on the properties of GaPN(As)-based heterostructures grown on silicon substrates

    Condensed matter physics
    Khrul S.N.Shubina K.Yu.Pirogov E.V.Kaveev A.K.Nikitina E.V.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 9
    • 1203
    • Pages: 45-48

    Mechanism of resistive state switching in a non-filamentary memory device made of halide perovskite

    Condensed matter physics
    Mahmoodpoor A.Alekseev P.A.Furasova A.D.Makarov S.V.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 19
    • 1265
    • Pages: 16-23

    Effect of GaAs buffer layer on the characteristics of GaAs nanowires grown by molecular beam epitaxy on Si(111) substrates

    Atom physics and physics of clusters and nanostructures
    Lendyashova V.V.Kotlyar K.P.Khrebtov A.I.Cirlin G.E.Ilkiv I.V.
    • Year: 2025
    • Volume: 18
    • Issue: 3.1
    • 6
    • 1219
    • Pages: 152-155

    The length distribution of nanowires with forward and backward surface diffusion

    Simulation of physical processes
    Dubrovskii V.G.Leshchenko E.D.
    • Year: 2025
    • Volume: 18
    • Issue: 4
    • 15
    • 1396
    • Pages: 34-47

    Collective excitations in the bulk doped semiconductor cadmium sulfide nanocrystals

    Theoretical physics
    Ipatov A.N.Kupriianov G.A.
    • Year: 2025
    • Volume: 18
    • Issue: 2
    • 22
    • 4441
    • Pages: 144-161

    Spin-lattice relaxation processes of nuclear spins in GaAs:Mn

    Bulk properties of semiconductors
    Berdnikov V.S.Kavokin K.V.Kuznetsova M.S.Litvyak V.MBazhin P.S.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 63
    • 5115
    • Pages: 6-10

    Study of GaPN(As) layers grown by molecular beam epitaxy on silicon substrates

    Physical materials technology
    Nikitina E.V.Shubina K.Yu.Sobolev M.S.Pirogov E.V.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 21
    • 3497
    • Pages: 275-278

    Photocatalytic properties of Ag-AgBr nanostructures formed by ion-exchange in photo-thermo-refractive glass for water-dye degradation

    Physical materials technology
    Pesniakov V.V.Marasanov D.V.Sgibnev Ye.M.Nikonorov N.V.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 10
    • 3736
    • Pages: 302-305

    GaN based ultraviolet narrowband photodetectors

    Physical optics
    Sinitskaya O.A.Shubina K.Yu.Mokhov D.V.Baranov A.I.Mizerov A.M.Nikitina E.V.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 24
    • 3731
    • Pages: 220-223

    Quantum state preparation with optical injection: Issue of intersymbol interference

    Experimental technique and devices
    Kudryashov I.S.Shakhovoy R.A.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 9
    • 3701
    • Pages: 173-177

    Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range

    Optoelectronic and nanoelectronic devices
    Kharin N.Yu.Panevin V.Yu.Vinnichenko M.Ya.Norvatov I.A.Fedorov V.V.Firsov D.A.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 22
    • 4190
    • Pages: 143-148

    Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy

    Heterostructures, superlattices, quantum wells
    Chumanov I.V.Firsov D.D.Kolyada D.V.Komkov O.S.Skvortsov I.V.Mashanov V.I.Timofeev V.A.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 54
    • 4216
    • Pages: 62-67

    Dynamics of electron-nuclear spin system in GaAs:Mn epitaxial layers

    Bulk properties of semiconductors
    Berdnikov V.S.Kuznetsova M.S.Kavokin K.V.Dzhioev R.I.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 40
    • 4556
    • Pages: 31-36

    Creation of an automated system for adjusting the position of the laser radiation axis for the air communication channel

    Radiophysics
    Nazarova K.S.Davydov V.V.
    • Year: 2023
    • Volume: 16
    • Issue: 3.2
    • 10
    • 4631
    • Pages: 377-382

    Photoluminescence anisotropy in hybrid nanostructures based on gallium phosphide nanowire and 2D transition metal dichalcogenides

    Physical optics
    Anikina M.A.Kusnetsov A.Toksumakov A.N.Dremov V.V.Ghazaryan D.A.Fedorov V.V.Arsenin А.V.Volkov V.S.Bolshakov A.D.
    • Year: 2023
    • Volume: 16
    • Issue: 3.2
    • 16
    • 5130
    • Pages: 130-136

    The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

    Physical electronics
    Sinitskaya O.A.Shubina K.Yu.Mokhov D.V.Uvarov A.V.Mizerov A.M.Nikitina E.V.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 17
    • 4871
    • Pages: 439-443

    Germanium polytypes formation on AlGaAs nanowire surface

    Atom physics and physics of clusters and nanostructures
    Ilkiv I.V.Kotlyar K.P.Osipov A.V.Reznik R.R.Cirlin G.E.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 16
    • 4844
    • Pages: 289-293

    Research of the photoelectric parameters of ZnO/Cu2O heterojunction solar cells

    Simulation of physical processes
    Saenko A.V.Bilyk G.E.Malyukov S.P.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 14
    • 5327
    • Pages: 221-226

    Temperature dependence of the energy spectrum of metamorphic InSb/In(Ga,Al)As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy

    Condensed matter physics
    Chumanov I.V.Firsov D.D.Solov'ev V.А.Chernov M.Yu.Komkov O.S.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 35
    • 5257
    • Pages: 47-52

    Development of the surface morphology of germanium upon irradiation with gallium ions

    Condensed matter physics
    Smirnova M.A.Bachurin V.I.Pukhov D.E.Mazaletsky L.A.Lebedev M.E.Churilov A.B.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 28
    • 5920
    • Pages: 21-25

    A theoretical study of macromolecule interaction with the quasi-free-standing and epitaxial graphene formed on the silicon carbide polytypes

    Physics of molecules
    Lebedev A.A.Davydov S.Yu.
    • Year: 2023
    • Volume: 16
    • Issue: 3
    • 213
    • 5834
    • Pages: 87-94

    Influence of stimulated interband emission on terahertz photoluminescence in n-type gallium arsenide layers

    Condensed matter physics
    Kharin N.Yu.Panevin V.Yu.Petruk A.D.Vinnichenko M.Ya.Norvatov I.A.Fedorov V.V.
    • Year: 2023
    • Volume: 16
    • Issue: 3
    • 217
    • 5921
    • Pages: 29-38

    The plasmon resonance in the cadmium selenide semiconductor nanocrystals with different doping types

    Atom physics and physics of clusters and nanostructures
    Ipatov A.N.Kupriianov G.A.
    • Year: 2023
    • Volume: 16
    • Issue: 2
    • 25
    • 6357
    • Pages: 27-51

    Optical properties of single InGaN nanowires with core-shell structure

    Physical optics
    Komarov S.D.Gridchin V.O.Lendyashova V.V.Kotlyar K.P.Reznik R.R.Dvoretskaya N.V.Dragunova A.S.Makhov I.S.Nadtochiy A.M.Kryzhanovskaya N.V.Cirlin G.E.Zhukov A.E.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 50
    • 5852
    • Pages: 114-120

    Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy

    Atom physics and physics of clusters and nanostructures
    Ilkiv I.V.Kotlyar K.P.Kirilenko D.A.Sharov V.A.Reznik R.R.Cirlin G.E.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 31
    • 5840
    • Pages: 341-345

    Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface

    Condensed matter physics
    Reznik R.R.Gridchin V.O.Kotlyar K.P.Dragunova A.S.Kryzhanovskaya N.V.Samsonenko Yu.B.Soshnikov I.P.Khrebtov A.I.Cirlin G.E.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 26
    • 5541
    • Pages: 153-157

    Experimental study of all-van-der-Waals waveguide polaritons at room temperature

    Physical optics
    Kondratiev V.I.Ivanova T.V.Tyugaev M.D.Samusev A.K.Kravtsov V.A.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 14
    • 6026
    • Pages: 223-225

    Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

    Physical optics
    Sinitskaya O.A.Shubina K.Yu.Mokhov D.V.Uvarov A.V.Filatov V.V.Mizerov A.M.Timoshnev S.N.Nikitina E.V.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 37
    • 6176
    • Pages: 157-162

    Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction

    Physical electronics
    Kazakin A.N.Enns Ya.B.Uvarov A.V.Nikitina E.V.
    • Year: 2022
    • Volume: 15
    • Issue: 3.2
    • 32
    • 6200
    • Pages: 145-149

    Dependence of light-addressable potentiometric sensor sensitivity on photo-induced processes in Si

    Physical electronics
    Kozlowski A.V.Stetsyura S.V.
    • Year: 2022
    • Volume: 15
    • Issue: 3.2
    • 19
    • 5803
    • Pages: 135-139

    Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy

    Atom physics and physics of clusters and nanostructures
    Lendyashova V.V.Ilkiv I.V.Borodin B.R.Ubyivovk E.V.Reznik R.R.Talalaev V.G.Cirlin G.E.
    • Year: 2022
    • Volume: 15
    • Issue: 3.2
    • 35
    • 6183
    • Pages: 75-79

    The photomagnetic effect in heteronanostructures based on gallium arsenide with qantum well and delta-layered with manganese

    Atom physics and physics of clusters and nanostructures
    Hapugin O. E.Gorbachev E. A.
    • Year: 2010
    • Issue: 4
    • 0
    • 10249
    • Pages: 7-11

    Excitonic photolumenescence kinetics of GaAs/AlGaAs structures with shallow quantum wells at low temperatures

    Atom physics and physics of clusters and nanostructures
    Kochiyev M. V.Nguyen M. H.Tsvetkov V. A.
    • Year: 2010
    • Issue: 3
    • 0
    • 9739
    • Pages: 58-62

    The topical trends in semiconductor and nanostructure physics, semiconductor  opto- and nanoelectronics (on the 18th All-Russion Youth Conference)

    Conferences
    Gavricova T.A.Firsov D.A.
    • Year: 2017
    • Volume: 10
    • Issue: 2
    • 69
    • 9870
    • Pages: 123-132

    A fiber-optic doppler blood flow-velocity sensor

    Experimental technique and devices
    Krasovskii V. I.Feofanov I. N.Ivashkin P. I.Kazaryan M. A.
    • Year: 2017
    • Volume: 10
    • Issue: 1
    • 129
    • 10069
    • Pages: 64-70

    Auger-recombination effect on the nonequilibrium charge carriers concentration in InGaAsSb /AlGaAsSb quantum wells

    Atom physics and physics of clusters and nanostructures
    Vinnichenko M.Ya.Makhov I.S.Selivanov A. V.Sorokina A. M.Vorobjev L.E.Firsov D.A.Shterengas L. M.Belenky G.L.
    • Year: 2016
    • Issue: 4
    • 117
    • 10178
    • Pages: 66-76

    Impurity assisted terahertz luminescence in quantum well nanostructures under interband photoexсitation

    Atom physics and physics of clusters and nanostructures
    Makhov I.S.Panevin V.Yu.Vinnichenko M.Ya.Sofronov A.N.Firsov D.A.Vorobjev L.E.
    • Year: 2016
    • Issue: 4
    • 88
    • 10083
    • Pages: 56-65

    Resultes of 17-th Аll-Russian youth conference on semiconductor and nanoctructure physics and semiconductor opto- and nanoelectronics

    Conferences
    Gavricova T.A.Zykov V.A.Firsov D.A.
    • Year: 2016
    • Issue: 1
    • 243
    • 9780
    • Pages: 98-108

    The energy spectrum of PbBi4Te7 on evidence derived from light reflection and absorption coefficients

    Condensed matter physics
    Veis A.N.
    • Year: 2015
    • Issue: 3
    • 393
    • 10202
    • Pages: 9-23

    Structural features of indium antimonide quantum dots on the indium arsenide substrate

    Condensed matter physics
    Sokura L.A.Nevedomskiy V.N.Bert N.A.
    • Year: 2015
    • Issue: 2
    • 366
    • 10577
    • Pages: 11-18

    The results of the 16-th All-Russian Youth Conference on Semiconductor and Nanostructure Physics and Semiconductor Opto- and Nanoelectronics

    Chronicle
    Gavricova T.A.Zykov V.A.Ilyin V.I.
    • Year: 2015
    • Issue: 1
    • 275
    • 9490
    • Pages: 158-166

    Local analysis of semiconductor nanoobjects by scanning tunneling atomic force microscopy

    Condensed matter physics
    Lashkova N.A.Permiakov N.V.Maximov A.I.Spivak Yu.M.Moshnikov V.A.
    • Year: 2015
    • Issue: 1
    • 601
    • 10361
    • Pages: 31-42

    The influence of natural irregularities on surface electron scattering

    Physical electronics
    Korablev V.V.Dubov V.V.
    • Year: 2014
    • Issue: 4
    • 268
    • 10168
    • Pages: 48-54

    he intervalley electron-phonon scattering in the A[III]B[V] crystal

    Condensed matter physics
    Nikitina L.N.Obukhov S.V.Tyuterev V.G.
    • Year: 2009
    • Issue: 2
    • 0
    • 9970
    • Pages: 34-38

    Composite C60CdS thin films for photoelectronics

    Condensed matter physics
    Zakharova I.B.Suprun E.I.Ilyin V.I.
    • Year: 2009
    • Issue: 2
    • 1
    • 9881
    • Pages: 23-29

    The influence of temperature and electric field on emission of carriers out of the InAs/CaAs quantum dots

    Condensed matter physics
    Gladyshev E.E.Gorshkov A.P.
    • Year: 2009
    • Issue: 2
    • 0
    • 9392
    • Pages: 11-14

    Actual directions of semiconductor physics and nanostructures, semiconductor nano- and optoelectronics (on the 15th All-Russian Youth Conference)

    Chronicle
    Vasil'eva M.A.Gavricova T.A.Zykov V.A.Ilyin V.I.Shalygin V.A.
    • Year: 2014
    • Issue: 1
    • 3
    • 9281
    • Pages: 157-163

    Temperature effects upon coherence of semiconductor lasers emission

    Physical optics
    Kniazkov A.V.Kukurichkin V.A.
    • Year: 2013
    • Issue: 4
    • 628
    • 10556
    • Pages: 93-99

    Laser diodes application to photodynamic therapy

    Experimental technique and devices
    Vorobjev L.E.Sofronov A.N.Firsov D.A.Demidov D.M.Leus R.V.Sverdlov M.A.Ter-Martirosyan A.L.
    • Year: 2011
    • Issue: 2
    • 0
    • 10167
    • Pages: 80-84

    Determinations of electrokinetic properties of semiconducting materials for making nanocathods

    Condensed matter physics
    Pastor A.A.Serdobintsev P.Yu.Timofeev N.A.Khodorkovskii M.A.Nakozina A.A.
    • Year: 2011
    • Issue: 4
    • 2
    • 9641
    • Pages: 39-43

    The Xlllth All-Russian Young-People Conference on Semiconductor Physics and Nanostructures, Semiconductor Opto- and Nanoelectronics

    Chronicle
    Vasil'eva M.A.Gavricova T.A.Ilyin V.I.
    • Year: 2012
    • Issue: 1
    • 0
    • 9659
    • Pages: 184-187

    The Casimir force pressure onthe dielectric layer in nanoscale solid-state multilayer Al - SiO2 - Si structures

    Condensed matter physics
    Yurova V.A.Fedortsov A.B.Klimchitskaya G.L.Churkin Yu.V.
    • Year: 2012
    • Issue: 3
    • 0
    • 9707
    • Pages: 22-28

    Resonance electron scattering by the surface of semiconductor with the natural nonuniformities

    Physical electronics
    Dubov V.V.Korablev V.V.Sugaipov M.S.
    • Year: 2013
    • Issue: 1
    • 534
    • 10817
    • Pages: 101-107

    Slow electrons scattering by fluctuation potential of semiconductor

    Physical electronics
    Dubov V.V.Korablev V.V.
    • Year: 2013
    • Issue: 1
    • 472
    • 10513
    • Pages: 93-100

    Growing and photoluminescence investigation of silicon-germanium structures doped with erbium on sapphire substrates

    Condensed matter physics
    Matveev S.A.Denisov S.A.Chalkov V.Yu.Shengurov V.G.Stepikhova M.V.
    • Year: 2013
    • Issue: 1
    • 559
    • 10361
    • Pages: 24-28

    Composite materials as a new direction  of nanotechnology development (on the 14th All-Russian Youth Conference on Semiconductor and Nanostructure Physics and Semiconductor Opto- and Nanoelectronics)

    Chronicle
    Musikhin S.F.Ilyin V.I.Gavricova T.A.Vasil'eva M.A.
    • Year: 2013
    • Issue: 2
    • 1070
    • 10811
    • Pages: 212-223

    Single-frequency mode regime of laser diodes

    Experimental technique and devices
    Dvortsov D.V.Parfenov V.A.
    • Year: 2013
    • Issue: 2
    • 1357
    • 11481
    • Pages: 89-96