Articles by keywords "semiconductor"

Collective excitations in the bulk doped semiconductor cadmium sulfide nanocrystals

Theoretical physics
  • Year: 2025
  • Volume: 18
  • Issue: 2
  • 1
  • 123
  • Pages: 144-161

Spin-lattice relaxation processes of nuclear spins in GaAs:Mn

Bulk properties of semiconductors
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 27
  • 529
  • Pages: 6-10

Study of GaPN(As) layers grown by molecular beam epitaxy on silicon substrates

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 8
  • 872
  • Pages: 275-278

Photocatalytic properties of Ag-AgBr nanostructures formed by ion-exchange in photo-thermo-refractive glass for water-dye degradation

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 6
  • 1114
  • Pages: 302-305

GaN based ultraviolet narrowband photodetectors

Physical optics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 7
  • 1118
  • Pages: 220-223

Quantum state preparation with optical injection: Issue of intersymbol interference

Experimental technique and devices
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 7
  • 1171
  • Pages: 173-177

Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 19
  • 1869
  • Pages: 143-148

Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy

Heterostructures, superlattices, quantum wells
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 36
  • 1927
  • Pages: 62-67

Dynamics of electron-nuclear spin system in GaAs:Mn epitaxial layers

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 22
  • 2126
  • Pages: 31-36

Creation of an automated system for adjusting the position of the laser radiation axis for the air communication channel

Radiophysics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 9
  • 2282
  • Pages: 377-382

Photoluminescence anisotropy in hybrid nanostructures based on gallium phosphide nanowire and 2D transition metal dichalcogenides

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 13
  • 2406
  • Pages: 130-136

The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 11
  • 2373
  • Pages: 439-443

Germanium polytypes formation on AlGaAs nanowire surface

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 12
  • 2460
  • Pages: 289-293

Research of the photoelectric parameters of ZnO/Cu2O heterojunction solar cells

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 12
  • 2569
  • Pages: 221-226

Temperature dependence of the energy spectrum of metamorphic InSb/In(Ga,Al)As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 26
  • 2567
  • Pages: 47-52

Development of the surface morphology of germanium upon irradiation with gallium ions

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 20
  • 3014
  • Pages: 21-25

A theoretical study of macromolecule interaction with the quasi-free-standing and epitaxial graphene formed on the silicon carbide polytypes

Physics of molecules
  • Year: 2023
  • Volume: 16
  • Issue: 3
  • 202
  • 3427
  • Pages: 87-94

Influence of stimulated interband emission on terahertz photoluminescence in n-type gallium arsenide layers

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3
  • 205
  • 3343
  • Pages: 29-38

The plasmon resonance in the cadmium selenide semiconductor nanocrystals with different doping types

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 2
  • 18
  • 3656
  • Pages: 27-51

Optical properties of single InGaN nanowires with core-shell structure

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 42
  • 3361
  • Pages: 114-120

Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 25
  • 3382
  • Pages: 341-345

Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 18
  • 3020
  • Pages: 153-157

Experimental study of all-van-der-Waals waveguide polaritons at room temperature

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 13
  • 3536
  • Pages: 223-225

Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 33
  • 3597
  • Pages: 157-162

Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 25
  • 3641
  • Pages: 145-149

Dependence of light-addressable potentiometric sensor sensitivity on photo-induced processes in Si

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 18
  • 3456
  • Pages: 135-139

Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 28
  • 3625
  • Pages: 75-79

The photomagnetic effect in heteronanostructures based on gallium arsenide with qantum well and delta-layered with manganese

Atom physics and physics of clusters and nanostructures
  • Year: 2010
  • Issue: 4
  • 0
  • 7933
  • Pages: 7-11

Excitonic photolumenescence kinetics of GaAs/AlGaAs structures with shallow quantum wells at low temperatures

Atom physics and physics of clusters and nanostructures
  • Year: 2010
  • Issue: 3
  • 0
  • 7462
  • Pages: 58-62

The topical trends in semiconductor and nanostructure physics, semiconductor  opto- and nanoelectronics (on the 18th All-Russion Youth Conference)

Conferences
  • Year: 2017
  • Volume: 10
  • Issue: 2
  • 69
  • 7673
  • Pages: 123-132

A fiber-optic doppler blood flow-velocity sensor

Experimental technique and devices
  • Year: 2017
  • Volume: 10
  • Issue: 1
  • 128
  • 7585
  • Pages: 64-70

Auger-recombination effect on the nonequilibrium charge carriers concentration in InGaAsSb /AlGaAsSb quantum wells

Atom physics and physics of clusters and nanostructures
  • Year: 2016
  • Issue: 4
  • 114
  • 7759
  • Pages: 66-76

Impurity assisted terahertz luminescence in quantum well nanostructures under interband photoexсitation

Atom physics and physics of clusters and nanostructures
  • Year: 2016
  • Issue: 4
  • 88
  • 7675
  • Pages: 56-65

Resultes of 17-th Аll-Russian youth conference on semiconductor and nanoctructure physics and semiconductor opto- and nanoelectronics

Conferences
  • Year: 2016
  • Issue: 1
  • 242
  • 7666
  • Pages: 98-108

The energy spectrum of PbBi4Te7 on evidence derived from light reflection and absorption coefficients

Condensed matter physics
  • Year: 2015
  • Issue: 3
  • 393
  • 7793
  • Pages: 9-23

Structural features of indium antimonide quantum dots on the indium arsenide substrate

Condensed matter physics
  • Year: 2015
  • Issue: 2
  • 365
  • 8148
  • Pages: 11-18

The results of the 16-th All-Russian Youth Conference on Semiconductor and Nanostructure Physics and Semiconductor Opto- and Nanoelectronics

Chronicle
  • Year: 2015
  • Issue: 1
  • 275
  • 7326
  • Pages: 158-166

Local analysis of semiconductor nanoobjects by scanning tunneling atomic force microscopy

Condensed matter physics
  • Year: 2015
  • Issue: 1
  • 600
  • 7864
  • Pages: 31-42

The influence of natural irregularities on surface electron scattering

Physical electronics
  • Year: 2014
  • Issue: 4
  • 267
  • 7898
  • Pages: 48-54

he intervalley electron-phonon scattering in the A[III]B[V] crystal

Condensed matter physics
  • Year: 2009
  • Issue: 2
  • 0
  • 7749
  • Pages: 34-38

Composite C60CdS thin films for photoelectronics

Condensed matter physics
  • Year: 2009
  • Issue: 2
  • 0
  • 7512
  • Pages: 23-29

The influence of temperature and electric field on emission of carriers out of the InAs/CaAs quantum dots

Condensed matter physics
  • Year: 2009
  • Issue: 2
  • 0
  • 7170
  • Pages: 11-14

Actual directions of semiconductor physics and nanostructures, semiconductor nano- and optoelectronics (on the 15th All-Russian Youth Conference)

Chronicle
  • Year: 2014
  • Issue: 1
  • 3
  • 7221
  • Pages: 157-163

Temperature effects upon coherence of semiconductor lasers emission

Physical optics
  • Year: 2013
  • Issue: 4
  • 628
  • 8226
  • Pages: 93-99

Laser diodes application to photodynamic therapy

Experimental technique and devices
  • Year: 2011
  • Issue: 2
  • 0
  • 7720
  • Pages: 80-84

Determinations of electrokinetic properties of semiconducting materials for making nanocathods

Condensed matter physics
  • Year: 2011
  • Issue: 4
  • 0
  • 7316
  • Pages: 39-43

The Xlllth All-Russian Young-People Conference on Semiconductor Physics and Nanostructures, Semiconductor Opto- and Nanoelectronics

Chronicle
  • Year: 2012
  • Issue: 1
  • 0
  • 7553
  • Pages: 184-187

The Casimir force pressure onthe dielectric layer in nanoscale solid-state multilayer Al - SiO2 - Si structures

Condensed matter physics
  • Year: 2012
  • Issue: 3
  • 0
  • 7369
  • Pages: 22-28

Resonance electron scattering by the surface of semiconductor with the natural nonuniformities

Physical electronics
  • Year: 2013
  • Issue: 1
  • 533
  • 8540
  • Pages: 101-107

Slow electrons scattering by fluctuation potential of semiconductor

Physical electronics
  • Year: 2013
  • Issue: 1
  • 471
  • 8158
  • Pages: 93-100

Growing and photoluminescence investigation of silicon-germanium structures doped with erbium on sapphire substrates

Condensed matter physics
  • Year: 2013
  • Issue: 1
  • 559
  • 8102
  • Pages: 24-28

Composite materials as a new direction  of nanotechnology development (on the 14th All-Russian Youth Conference on Semiconductor and Nanostructure Physics and Semiconductor Opto- and Nanoelectronics)

Chronicle
  • Year: 2013
  • Issue: 2
  • 1070
  • 8691
  • Pages: 212-223

Single-frequency mode regime of laser diodes

Experimental technique and devices
  • Year: 2013
  • Issue: 2
  • 1357
  • 9186
  • Pages: 89-96

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