Publication schedule
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№1 March 2021Submission deadline: 20 January 2021
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№2 June 2021Submission deadline: 1 April 2021
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№3 September 2021Submission deadline: 20 June 2021
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№4 December 2021Submission deadline: 1 October 2021
Articles by keywords "semiconductor"
Excitonic photolumenescence kinetics of GaAs/AlGaAs structures with shallow quantum wells at low temperatures
- Year: 2010
- Issue: 3
- 0
- 1979
- Pages: 58-62
The topical trends in semiconductor and nanostructure physics, semiconductor opto- and nanoelectronics (on the 18th All-Russion Youth Conference)
- Year: 2017
- Volume: 10
- Issue: 2
- 63
- 1851
- Pages: 123-132
A fiber-optic doppler blood flow-velocity sensor
- Year: 2017
- Volume: 10
- Issue: 1
- 116
- 1961
- Pages: 64-70
Auger-recombination effect on the nonequilibrium charge carriers concentration in InGaAsSb /AlGaAsSb quantum wells
- Year: 2016
- Issue: 4
- 108
- 1889
- Pages: 66-76
Impurity assisted terahertz luminescence in quantum well nanostructures under interband photoexсitation
- Year: 2016
- Issue: 4
- 81
- 1910
- Pages: 56-65
Resultes of 17-th Аll-Russian youth conference on semiconductor and nanoctructure physics and semiconductor opto- and nanoelectronics
- Year: 2016
- Issue: 1
- 240
- 2184
- Pages: 98-108
The energy spectrum of PbBi4Te7 on evidence derived from light reflection and absorption coefficients
- Year: 2015
- Issue: 3
- 391
- 2241
- Pages: 9-23
Structural features of indium antimonide quantum dots on the indium arsenide substrate
- Year: 2015
- Issue: 2
- 356
- 2338
- Pages: 11-18
The results of the 16-th All-Russian Youth Conference on Semiconductor and Nanostructure Physics and Semiconductor Opto- and Nanoelectronics
- Year: 2015
- Issue: 1
- 273
- 2108
- Pages: 158-166
Local analysis of semiconductor nanoobjects by scanning tunneling atomic force microscopy
- Year: 2015
- Issue: 1
- 596
- 2503
- Pages: 31-42
The influence of natural irregularities on surface electron scattering
- Year: 2014
- Issue: 4
- 264
- 2307
- Pages: 48-54
he intervalley electron-phonon scattering in the A[III]B[V] crystal
- Year: 2009
- Issue: 2
- 0
- 2178
- Pages: 34-38
The influence of temperature and electric field on emission of carriers out of the InAs/CaAs quantum dots
- Year: 2009
- Issue: 2
- 0
- 1915
- Pages: 11-14
Actual directions of semiconductor physics and nanostructures, semiconductor nano- and optoelectronics (on the 15th All-Russian Youth Conference)
- Year: 2014
- Issue: 1
- 1
- 1706
- Pages: 157-163
Temperature effects upon coherence of semiconductor lasers emission
- Year: 2013
- Issue: 4
- 624
- 2688
- Pages: 93-99
Determinations of electrokinetic properties of semiconducting materials for making nanocathods
- Year: 2011
- Issue: 4
- 0
- 1819
- Pages: 39-43
The Xlllth All-Russian Young-People Conference on Semiconductor Physics and Nanostructures, Semiconductor Opto- and Nanoelectronics
- Year: 2012
- Issue: 1
- 0
- 1945
- Pages: 184-187
The Casimir force pressure onthe dielectric layer in nanoscale solid-state multilayer Al - SiO2 - Si structures
- Year: 2012
- Issue: 3
- 0
- 1819
- Pages: 22-28
Resonance electron scattering by the surface of semiconductor with the natural nonuniformities
- Year: 2013
- Issue: 1
- 531
- 2713
- Pages: 101-107
Slow electrons scattering by fluctuation potential of semiconductor
- Year: 2013
- Issue: 1
- 470
- 2684
- Pages: 93-100
Growing and photoluminescence investigation of silicon-germanium structures doped with erbium on sapphire substrates
- Year: 2013
- Issue: 1
- 556
- 2610
- Pages: 24-28