Articles by keywords "SEM"

Collective excitations in the bulk doped semiconductor cadmium sulfide nanocrystals

Theoretical physics
  • Year: 2025
  • Volume: 18
  • Issue: 2
  • 2
  • 316
  • Pages: 144-161

Spin-lattice relaxation processes of nuclear spins in GaAs:Mn

Bulk properties of semiconductors
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 29
  • 664
  • Pages: 6-10

Study of GaPN(As) layers grown by molecular beam epitaxy on silicon substrates

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 8
  • 971
  • Pages: 275-278

The Sivers asymmetry in deep inelastic charged lepton scattering on a transverse polarized proton target

Nuclear physics
  • Year: 2024
  • Volume: 17
  • Issue: 4
  • 14
  • 1166
  • Pages: 130-137

Hierarchical self-assembly of SiO2-SnO2 nanoand microstructures in combined sol-gel systems

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 11
  • 989
  • Pages: 42-45

Mg2Si synthesis on silicon crystals with different aspect ratio

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 13
  • 1067
  • Pages: 31-35

Photocatalytic properties of Ag-AgBr nanostructures formed by ion-exchange in photo-thermo-refractive glass for water-dye degradation

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 7
  • 1249
  • Pages: 302-305

GaN based ultraviolet narrowband photodetectors

Physical optics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 10
  • 1225
  • Pages: 220-223

Quantum state preparation with optical injection: Issue of intersymbol interference

Experimental technique and devices
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 7
  • 1291
  • Pages: 173-177

Development of semitransparent Perovskite Solar Cells with double electron transport layer and modified top electrode

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 21
  • 1335
  • Pages: 14-18

Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 19
  • 1956
  • Pages: 143-148

Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy

Heterostructures, superlattices, quantum wells
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 36
  • 2032
  • Pages: 62-67

Dynamics of electron-nuclear spin system in GaAs:Mn epitaxial layers

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 22
  • 2225
  • Pages: 31-36

A generative adversarial network as the basis for a semi-inclusive deep inelastic lepton scattering generator on a polarized proton

Nuclear physics
  • Year: 2024
  • Volume: 17
  • Issue: 1
  • 79
  • 2419
  • Pages: 93-102

Simulation of semi-inclusive deep inelastic lepton scattering on a proton at energies of 20 – 100 GeV on the basis of the Generative-Adversarial Neural Network

Nuclear physics
  • Year: 2023
  • Volume: 16
  • Issue: 4
  • 42
  • 2673
  • Pages: 189-197

Current – voltage characteristics of MaPbI3 perovskite films formed by the single-stage spin-coat method

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 4
  • 41
  • 3005
  • Pages: 9-19

Creation of an automated system for adjusting the position of the laser radiation axis for the air communication channel

Radiophysics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 9
  • 2390
  • Pages: 377-382

Photoluminescence anisotropy in hybrid nanostructures based on gallium phosphide nanowire and 2D transition metal dichalcogenides

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 14
  • 2528
  • Pages: 130-136

The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 11
  • 2483
  • Pages: 439-443

Germanium polytypes formation on AlGaAs nanowire surface

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 13
  • 2571
  • Pages: 289-293

Research of the photoelectric parameters of ZnO/Cu2O heterojunction solar cells

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 12
  • 2675
  • Pages: 221-226

Temperature dependence of the energy spectrum of metamorphic InSb/In(Ga,Al)As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 26
  • 2674
  • Pages: 47-52

Development of the surface morphology of germanium upon irradiation with gallium ions

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 20
  • 3145
  • Pages: 21-25

A theoretical study of macromolecule interaction with the quasi-free-standing and epitaxial graphene formed on the silicon carbide polytypes

Physics of molecules
  • Year: 2023
  • Volume: 16
  • Issue: 3
  • 210
  • 3548
  • Pages: 87-94

Influence of stimulated interband emission on terahertz photoluminescence in n-type gallium arsenide layers

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3
  • 213
  • 3454
  • Pages: 29-38

The plasmon resonance in the cadmium selenide semiconductor nanocrystals with different doping types

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 2
  • 21
  • 3810
  • Pages: 27-51

Magnetoresistivity and Hall effect in Weyl semimetal WTe2

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 98
  • 3645
  • Pages: 26-32

Magnetic properties of heterophase film coatings based on a solid solution of cadmium sulfide and iron

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 20
  • 3460
  • Pages: 236-240

Synthesis of semi-polar GaN(11-22) on a nano-patterned Si(113) substrate

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 14
  • 3032
  • Pages: 224-228

Optical properties of single InGaN nanowires with core-shell structure

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 43
  • 3471
  • Pages: 114-120

Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 25
  • 3506
  • Pages: 341-345

Application of conical magnetic rotating fields for controlled colloidal self-assembly

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 51
  • 3245
  • Pages: 205-210

Calculation of correlation lengths in 2D Lennard-Jones fluids

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 9
  • 3334
  • Pages: 197-204

Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 18
  • 3129
  • Pages: 153-157

The two-temperature effect on a semiconducting thermoelastic solid cylinder based on the modified Moore – Gibson – Thompson heat transfer

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 1
  • 16
  • 3643
  • Pages: 65-81

Langmuir-Blodgett technology to obtain semi- magnetic photosensitive materials

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 26
  • 3905
  • Pages: 250-254

Experimental study of all-van-der-Waals waveguide polaritons at room temperature

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 13
  • 3635
  • Pages: 223-225

Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 33
  • 3703
  • Pages: 157-162

Transport and optical phenomena in two-dimensional Dirac semimetals

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 38
  • 4525
  • Pages: 18-21

Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 25
  • 3772
  • Pages: 145-149

Dependence of light-addressable potentiometric sensor sensitivity on photo-induced processes in Si

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 18
  • 3547
  • Pages: 135-139

Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 28
  • 3737
  • Pages: 75-79

Semipolar GaN layers on nanostructured silicon: technology and properties

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 17
  • 3893
  • Pages: 179-184

Effect of thermal annealing on grain size and phase changes in magnetron titanium oxide films

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 27
  • 4027
  • Pages: 149-154

A dynamic-stochastic approach to the construction and use of predictive models

Simulation of physical processes
  • Year: 2020
  • Volume: 13
  • Issue: 1
  • 26
  • 7029
  • Pages: 26-41

A model of new information dissemination in the society

Mathematics
  • Year: 2019
  • Volume: 12
  • Issue: 4
  • 62
  • 6999
  • Pages: 119-134

Fundamental problems of intensive plastic deformation of crystalline solids

Conferences
  • Year: 2013
  • Issue: 4
  • 1
  • 7206
  • Pages: 166-169

The photomagnetic effect in heteronanostructures based on gallium arsenide with qantum well and delta-layered with manganese

Atom physics and physics of clusters and nanostructures
  • Year: 2010
  • Issue: 4
  • 0
  • 8056
  • Pages: 7-11

Excitonic photolumenescence kinetics of GaAs/AlGaAs structures with shallow quantum wells at low temperatures

Atom physics and physics of clusters and nanostructures
  • Year: 2010
  • Issue: 3
  • 0
  • 7572
  • Pages: 58-62

Morphology of dried nanogel films of bacterial cellulose impregnated with the silver nitrate solution

Physical materials technology
  • Year: 2018
  • Volume: 11
  • Issue: 1
  • 62
  • 8379
  • Pages: 112-121

Emission gamma tomography of the test fuel assembly for BOR-60 reactor

Experimental technique and devices
  • Year: 2017
  • Volume: 10
  • Issue: 4
  • 54
  • 7281
  • Pages: 73-81

Formation of the angular dependence of intensity of the light scattered on the optically dense atomic ensemble

Theoretical physics
  • Year: 2017
  • Volume: 10
  • Issue: 3
  • 132
  • 7556
  • Pages: 75-83

The topical trends in semiconductor and nanostructure physics, semiconductor  opto- and nanoelectronics (on the 18th All-Russion Youth Conference)

Conferences
  • Year: 2017
  • Volume: 10
  • Issue: 2
  • 69
  • 7794
  • Pages: 123-132

A fiber-optic doppler blood flow-velocity sensor

Experimental technique and devices
  • Year: 2017
  • Volume: 10
  • Issue: 1
  • 128
  • 7688
  • Pages: 64-70

Auger-recombination effect on the nonequilibrium charge carriers concentration in InGaAsSb /AlGaAsSb quantum wells

Atom physics and physics of clusters and nanostructures
  • Year: 2016
  • Issue: 4
  • 114
  • 7862
  • Pages: 66-76

Impurity assisted terahertz luminescence in quantum well nanostructures under interband photoexсitation

Atom physics and physics of clusters and nanostructures
  • Year: 2016
  • Issue: 4
  • 88
  • 7776
  • Pages: 56-65

Resultes of 17-th Аll-Russian youth conference on semiconductor and nanoctructure physics and semiconductor opto- and nanoelectronics

Conferences
  • Year: 2016
  • Issue: 1
  • 242
  • 7764
  • Pages: 98-108

The semi-markov model for the ‘technological module – storage device’ structure

Simulation of physical processes
  • Year: 2016
  • Issue: 1
  • 143
  • 7511
  • Pages: 16-28

The energy spectrum of PbBi4Te7 on evidence derived from light reflection and absorption coefficients

Condensed matter physics
  • Year: 2015
  • Issue: 3
  • 393
  • 7891
  • Pages: 9-23

Structural features of indium antimonide quantum dots on the indium arsenide substrate

Condensed matter physics
  • Year: 2015
  • Issue: 2
  • 365
  • 8246
  • Pages: 11-18

The results of the 16-th All-Russian Youth Conference on Semiconductor and Nanostructure Physics and Semiconductor Opto- and Nanoelectronics

Chronicle
  • Year: 2015
  • Issue: 1
  • 275
  • 7430
  • Pages: 158-166

Local analysis of semiconductor nanoobjects by scanning tunneling atomic force microscopy

Condensed matter physics
  • Year: 2015
  • Issue: 1
  • 600
  • 7994
  • Pages: 31-42

The influence of natural irregularities on surface electron scattering

Physical electronics
  • Year: 2014
  • Issue: 4
  • 267
  • 7994
  • Pages: 48-54

he intervalley electron-phonon scattering in the A[III]B[V] crystal

Condensed matter physics
  • Year: 2009
  • Issue: 2
  • 0
  • 7849
  • Pages: 34-38

Composite C60CdS thin films for photoelectronics

Condensed matter physics
  • Year: 2009
  • Issue: 2
  • 0
  • 7632
  • Pages: 23-29

The influence of temperature and electric field on emission of carriers out of the InAs/CaAs quantum dots

Condensed matter physics
  • Year: 2009
  • Issue: 2
  • 0
  • 7275
  • Pages: 11-14

Actual directions of semiconductor physics and nanostructures, semiconductor nano- and optoelectronics (on the 15th All-Russian Youth Conference)

Chronicle
  • Year: 2014
  • Issue: 1
  • 3
  • 7323
  • Pages: 157-163

Temperature effects upon coherence of semiconductor lasers emission

Physical optics
  • Year: 2013
  • Issue: 4
  • 628
  • 8331
  • Pages: 93-99

Laser diodes application to photodynamic therapy

Experimental technique and devices
  • Year: 2011
  • Issue: 2
  • 0
  • 7824
  • Pages: 80-84

Determinations of electrokinetic properties of semiconducting materials for making nanocathods

Condensed matter physics
  • Year: 2011
  • Issue: 4
  • 0
  • 7434
  • Pages: 39-43

The Xlllth All-Russian Young-People Conference on Semiconductor Physics and Nanostructures, Semiconductor Opto- and Nanoelectronics

Chronicle
  • Year: 2012
  • Issue: 1
  • 0
  • 7656
  • Pages: 184-187

The Casimir force pressure onthe dielectric layer in nanoscale solid-state multilayer Al - SiO2 - Si structures

Condensed matter physics
  • Year: 2012
  • Issue: 3
  • 0
  • 7465
  • Pages: 22-28

Resonance electron scattering by the surface of semiconductor with the natural nonuniformities

Physical electronics
  • Year: 2013
  • Issue: 1
  • 533
  • 8635
  • Pages: 101-107

Slow electrons scattering by fluctuation potential of semiconductor

Physical electronics
  • Year: 2013
  • Issue: 1
  • 471
  • 8255
  • Pages: 93-100

Growing and photoluminescence investigation of silicon-germanium structures doped with erbium on sapphire substrates

Condensed matter physics
  • Year: 2013
  • Issue: 1
  • 559
  • 8200
  • Pages: 24-28

Composite materials as a new direction  of nanotechnology development (on the 14th All-Russian Youth Conference on Semiconductor and Nanostructure Physics and Semiconductor Opto- and Nanoelectronics)

Chronicle
  • Year: 2013
  • Issue: 2
  • 1070
  • 8794
  • Pages: 212-223

Single-frequency mode regime of laser diodes

Experimental technique and devices
  • Year: 2013
  • Issue: 2
  • 1357
  • 9283
  • Pages: 89-96

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