Articles by keywords "SEM"

Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 9
  • 855
  • Pages: 143-148

Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy

Heterostructures, superlattices, quantum wells
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 17
  • 876
  • Pages: 62-67

Dynamics of electron-nuclear spin system in GaAs:Mn epitaxial layers

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 15
  • 973
  • Pages: 31-36

A generative adversarial network as the basis for a semi-inclusive deep inelastic lepton scattering generator on a polarized proton

Nuclear physics
  • Year: 2024
  • Volume: 17
  • Issue: 1
  • 49
  • 1257
  • Pages: 93-102

Simulation of semi-inclusive deep inelastic lepton scattering on a proton at energies of 20 – 100 GeV on the basis of the Generative-Adversarial Neural Network

Nuclear physics
  • Year: 2023
  • Volume: 16
  • Issue: 4
  • 35
  • 1508
  • Pages: 189-197

Current – voltage characteristics of MaPbI3 perovskite films formed by the single-stage spin-coat method

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 4
  • 31
  • 1691
  • Pages: 9-19

Creation of an automated system for adjusting the position of the laser radiation axis for the air communication channel

Radiophysics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 8
  • 1231
  • Pages: 377-382

Photoluminescence anisotropy in hybrid nanostructures based on gallium phosphide nanowire and 2D transition metal dichalcogenides

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 7
  • 1307
  • Pages: 130-136

The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 6
  • 1300
  • Pages: 439-443

Germanium polytypes formation on AlGaAs nanowire surface

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 8
  • 1393
  • Pages: 289-293

Research of the photoelectric parameters of ZnO/Cu2O heterojunction solar cells

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 6
  • 1534
  • Pages: 221-226

Temperature dependence of the energy spectrum of metamorphic InSb/In(Ga,Al)As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 24
  • 1514
  • Pages: 47-52

Development of the surface morphology of germanium upon irradiation with gallium ions

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 18
  • 1733
  • Pages: 21-25

A theoretical study of macromolecule interaction with the quasi-free-standing and epitaxial graphene formed on the silicon carbide polytypes

Physics of molecules
  • Year: 2023
  • Volume: 16
  • Issue: 3
  • 126
  • 2065
  • Pages: 87-94

Influence of stimulated interband emission on terahertz photoluminescence in n-type gallium arsenide layers

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3
  • 128
  • 2204
  • Pages: 29-38

The plasmon resonance in the cadmium selenide semiconductor nanocrystals with different doping types

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 2
  • 13
  • 2362
  • Pages: 27-51

Magnetoresistivity and Hall effect in Weyl semimetal WTe2

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 85
  • 2407
  • Pages: 26-32

Magnetic properties of heterophase film coatings based on a solid solution of cadmium sulfide and iron

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 8
  • 2248
  • Pages: 236-240

Synthesis of semi-polar GaN(11-22) on a nano-patterned Si(113) substrate

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 8
  • 1889
  • Pages: 224-228

Optical properties of single InGaN nanowires with core-shell structure

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 32
  • 2140
  • Pages: 114-120

Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 20
  • 2237
  • Pages: 341-345

Application of conical magnetic rotating fields for controlled colloidal self-assembly

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 33
  • 2061
  • Pages: 205-210

Calculation of correlation lengths in 2D Lennard-Jones fluids

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 5
  • 2136
  • Pages: 197-204

Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 16
  • 2006
  • Pages: 153-157

The two-temperature effect on a semiconducting thermoelastic solid cylinder based on the modified Moore – Gibson – Thompson heat transfer

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 1
  • 13
  • 2400
  • Pages: 65-81

Langmuir-Blodgett technology to obtain semi- magnetic photosensitive materials

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 17
  • 2597
  • Pages: 250-254

Experimental study of all-van-der-Waals waveguide polaritons at room temperature

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 11
  • 2457
  • Pages: 223-225

Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 22
  • 2565
  • Pages: 157-162

Transport and optical phenomena in two-dimensional Dirac semimetals

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 34
  • 3061
  • Pages: 18-21

Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 18
  • 2551
  • Pages: 145-149

Dependence of light-addressable potentiometric sensor sensitivity on photo-induced processes in Si

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 16
  • 2467
  • Pages: 135-139

Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 25
  • 2541
  • Pages: 75-79

Semipolar GaN layers on nanostructured silicon: technology and properties

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 16
  • 2765
  • Pages: 179-184

Effect of thermal annealing on grain size and phase changes in magnetron titanium oxide films

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 22
  • 2827
  • Pages: 149-154

A dynamic-stochastic approach to the construction and use of predictive models

Simulation of physical processes
  • Year: 2020
  • Volume: 13
  • Issue: 1
  • 25
  • 5855
  • Pages: 26-41

A model of new information dissemination in the society

Mathematics
  • Year: 2019
  • Volume: 12
  • Issue: 4
  • 59
  • 5882
  • Pages: 119-134

Fundamental problems of intensive plastic deformation of crystalline solids

Conferences
  • Year: 2013
  • Issue: 4
  • 1
  • 6195
  • Pages: 166-169

The photomagnetic effect in heteronanostructures based on gallium arsenide with qantum well and delta-layered with manganese

Atom physics and physics of clusters and nanostructures
  • Year: 2010
  • Issue: 4
  • 0
  • 6904
  • Pages: 7-11

Excitonic photolumenescence kinetics of GaAs/AlGaAs structures with shallow quantum wells at low temperatures

Atom physics and physics of clusters and nanostructures
  • Year: 2010
  • Issue: 3
  • 0
  • 6488
  • Pages: 58-62

Morphology of dried nanogel films of bacterial cellulose impregnated with the silver nitrate solution

Physical materials technology
  • Year: 2018
  • Volume: 11
  • Issue: 1
  • 60
  • 7153
  • Pages: 112-121

Emission gamma tomography of the test fuel assembly for BOR-60 reactor

Experimental technique and devices
  • Year: 2017
  • Volume: 10
  • Issue: 4
  • 54
  • 6202
  • Pages: 73-81

Formation of the angular dependence of intensity of the light scattered on the optically dense atomic ensemble

Theoretical physics
  • Year: 2017
  • Volume: 10
  • Issue: 3
  • 132
  • 6472
  • Pages: 75-83

The topical trends in semiconductor and nanostructure physics, semiconductor  opto- and nanoelectronics (on the 18th All-Russion Youth Conference)

Conferences
  • Year: 2017
  • Volume: 10
  • Issue: 2
  • 68
  • 6610
  • Pages: 123-132

A fiber-optic doppler blood flow-velocity sensor

Experimental technique and devices
  • Year: 2017
  • Volume: 10
  • Issue: 1
  • 128
  • 6550
  • Pages: 64-70

Auger-recombination effect on the nonequilibrium charge carriers concentration in InGaAsSb /AlGaAsSb quantum wells

Atom physics and physics of clusters and nanostructures
  • Year: 2016
  • Issue: 4
  • 114
  • 6633
  • Pages: 66-76

Impurity assisted terahertz luminescence in quantum well nanostructures under interband photoexсitation

Atom physics and physics of clusters and nanostructures
  • Year: 2016
  • Issue: 4
  • 87
  • 6603
  • Pages: 56-65

Resultes of 17-th Аll-Russian youth conference on semiconductor and nanoctructure physics and semiconductor opto- and nanoelectronics

Conferences
  • Year: 2016
  • Issue: 1
  • 242
  • 6673
  • Pages: 98-108

The semi-markov model for the ‘technological module – storage device’ structure

Simulation of physical processes
  • Year: 2016
  • Issue: 1
  • 143
  • 6411
  • Pages: 16-28

The energy spectrum of PbBi4Te7 on evidence derived from light reflection and absorption coefficients

Condensed matter physics
  • Year: 2015
  • Issue: 3
  • 393
  • 6822
  • Pages: 9-23

Structural features of indium antimonide quantum dots on the indium arsenide substrate

Condensed matter physics
  • Year: 2015
  • Issue: 2
  • 363
  • 7057
  • Pages: 11-18

The results of the 16-th All-Russian Youth Conference on Semiconductor and Nanostructure Physics and Semiconductor Opto- and Nanoelectronics

Chronicle
  • Year: 2015
  • Issue: 1
  • 275
  • 6327
  • Pages: 158-166

Local analysis of semiconductor nanoobjects by scanning tunneling atomic force microscopy

Condensed matter physics
  • Year: 2015
  • Issue: 1
  • 600
  • 6885
  • Pages: 31-42

The influence of natural irregularities on surface electron scattering

Physical electronics
  • Year: 2014
  • Issue: 4
  • 267
  • 6833
  • Pages: 48-54

he intervalley electron-phonon scattering in the A[III]B[V] crystal

Condensed matter physics
  • Year: 2009
  • Issue: 2
  • 0
  • 6762
  • Pages: 34-38

Composite C60CdS thin films for photoelectronics

Condensed matter physics
  • Year: 2009
  • Issue: 2
  • 0
  • 6410
  • Pages: 23-29

The influence of temperature and electric field on emission of carriers out of the InAs/CaAs quantum dots

Condensed matter physics
  • Year: 2009
  • Issue: 2
  • 0
  • 6221
  • Pages: 11-14

Actual directions of semiconductor physics and nanostructures, semiconductor nano- and optoelectronics (on the 15th All-Russian Youth Conference)

Chronicle
  • Year: 2014
  • Issue: 1
  • 2
  • 6244
  • Pages: 157-163

Temperature effects upon coherence of semiconductor lasers emission

Physical optics
  • Year: 2013
  • Issue: 4
  • 627
  • 7204
  • Pages: 93-99

Laser diodes application to photodynamic therapy

Experimental technique and devices
  • Year: 2011
  • Issue: 2
  • 0
  • 6711
  • Pages: 80-84

Determinations of electrokinetic properties of semiconducting materials for making nanocathods

Condensed matter physics
  • Year: 2011
  • Issue: 4
  • 0
  • 6370
  • Pages: 39-43

The Xlllth All-Russian Young-People Conference on Semiconductor Physics and Nanostructures, Semiconductor Opto- and Nanoelectronics

Chronicle
  • Year: 2012
  • Issue: 1
  • 0
  • 6563
  • Pages: 184-187

The Casimir force pressure onthe dielectric layer in nanoscale solid-state multilayer Al - SiO2 - Si structures

Condensed matter physics
  • Year: 2012
  • Issue: 3
  • 0
  • 6349
  • Pages: 22-28

Resonance electron scattering by the surface of semiconductor with the natural nonuniformities

Physical electronics
  • Year: 2013
  • Issue: 1
  • 532
  • 7468
  • Pages: 101-107

Slow electrons scattering by fluctuation potential of semiconductor

Physical electronics
  • Year: 2013
  • Issue: 1
  • 471
  • 7188
  • Pages: 93-100

Growing and photoluminescence investigation of silicon-germanium structures doped with erbium on sapphire substrates

Condensed matter physics
  • Year: 2013
  • Issue: 1
  • 559
  • 7163
  • Pages: 24-28

Composite materials as a new direction  of nanotechnology development (on the 14th All-Russian Youth Conference on Semiconductor and Nanostructure Physics and Semiconductor Opto- and Nanoelectronics)

Chronicle
  • Year: 2013
  • Issue: 2
  • 1069
  • 7766
  • Pages: 212-223

Single-frequency mode regime of laser diodes

Experimental technique and devices
  • Year: 2013
  • Issue: 2
  • 1355
  • 8230
  • Pages: 89-96