Articles by keywords "molecular beam epitaxy"

The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 2
  • 23
  • 1032
  • Pages: 120-133

Germanium polytypes formation on AlGaAs nanowire surface

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 8
  • 1393
  • Pages: 289-293

Ab initio modelling of In wetting layer formation on As-stabilized GaAs during first stages of droplet epitaxy

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 5
  • 1463
  • Pages: 193-197

Effect of plasma-chemical treatment of Si(001) substrates on the subsequent epitaxial growth of GaAs

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 16
  • 1455
  • Pages: 122-127

Effect of temperature during homoepitaxial growth of Si on Si(100) on the character of reflection high-energy electron diffraction patterns

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 13
  • 1504
  • Pages: 112-116

Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 13
  • 1514
  • Pages: 79-83

Study of arsenic flux effect on thermal desorption of GaAs native oxide and surface morphology

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 16
  • 1453
  • Pages: 74-78

Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 15
  • 1421
  • Pages: 64-68

Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 43
  • 2310
  • Pages: 179-184

Nanoscale layers of hexaferrite BaFe12O19 grown by laser molecular beam epitaxy: growth, crystal structure and magnetic properties

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 7
  • 1859
  • Pages: 363-368

Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 20
  • 2237
  • Pages: 341-345

Formation of a dielectric sublayer heterostructure of lead-tin telluride

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 14
  • 2045
  • Pages: 158-161

Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 26
  • 2500
  • Pages: 311-314

Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 29
  • 2517
  • Pages: 281-284

Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 22
  • 2565
  • Pages: 157-162

Study of FIB-modified silicon areas by AFM and Raman spectroscopy

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 16
  • 2491
  • Pages: 59-63

Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 21
  • 2470
  • Pages: 54-58

Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 13
  • 2427
  • Pages: 48-53

Effect of FIB-modification of Si(111) surface on GaAs nanowire growth

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 11
  • 2477
  • Pages: 36-41

Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 23
  • 2656
  • Pages: 31-35

Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 18
  • 2550
  • Pages: 145-149

Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 25
  • 2540
  • Pages: 75-79

The growth of gallium nitride layers with low dislocation density

Condensed matter physics
  • Year: 2012
  • Issue: 4
  • 0
  • 6302
  • Pages: 28-31