Articles by keywords "molecular beam epitaxy"
Study of GaPN(As) layers grown by molecular beam epitaxy on silicon substrates
- Year: 2024
- Volume: 17
- Issue: 3.2
- 6
- 451
- Pages: 275-278
Influence of the doping level in the absorption layer of InGaAs/InP 2.5 μm photodetectors on their electrical properties
- Year: 2024
- Volume: 17
- Issue: 3.2
- 8
- 494
- Pages: 182-186
Study of the formation mechanisms of Ge terraces on Si(100) during MBE using the RHEED method
- Year: 2024
- Volume: 17
- Issue: 3.2
- 8
- 498
- Pages: 139-142
Numerical investigation of influence GaP nanowire geometry to light extraction efficiency of red light-emitting diode
- Year: 2024
- Volume: 17
- Issue: 3.2
- 11
- 491
- Pages: 84-87
Influence of the wet-chemical treatment on the optical and structural properties of core-shell InGaN nanowires
- Year: 2024
- Volume: 17
- Issue: 3.1
- 9
- 730
- Pages: 306-309
Ab initio study of In adsorption on AlxGa1–xAs substrates at the first stages of droplet epitaxy
- Year: 2024
- Volume: 17
- Issue: 3.1
- 5
- 750
- Pages: 100-104
Study of the photoluminescence properties of subcritical InAs/GaAs quantum dots formed onto structured substrates
- Year: 2024
- Volume: 17
- Issue: 3.1
- 9
- 733
- Pages: 79-83
Quantum dots formation by InGaAs decomposition onto a patterned GaAs surface
- Year: 2024
- Volume: 17
- Issue: 3.1
- 5
- 708
- Pages: 38-42
Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si(111)
- Year: 2024
- Volume: 17
- Issue: 3.1
- 7
- 708
- Pages: 28-33
The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique
- Year: 2024
- Volume: 17
- Issue: 2
- 36
- 1867
- Pages: 120-133
Germanium polytypes formation on AlGaAs nanowire surface
- Year: 2023
- Volume: 16
- Issue: 3.1
- 12
- 2095
- Pages: 289-293
Ab initio modelling of In wetting layer formation on As-stabilized GaAs during first stages of droplet epitaxy
- Year: 2023
- Volume: 16
- Issue: 3.1
- 9
- 2201
- Pages: 193-197
Effect of plasma-chemical treatment of Si(001) substrates on the subsequent epitaxial growth of GaAs
- Year: 2023
- Volume: 16
- Issue: 3.1
- 19
- 2150
- Pages: 122-127
Effect of temperature during homoepitaxial growth of Si on Si(100) on the character of reflection high-energy electron diffraction patterns
- Year: 2023
- Volume: 16
- Issue: 3.1
- 17
- 2178
- Pages: 112-116
Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth
- Year: 2023
- Volume: 16
- Issue: 3.1
- 15
- 2169
- Pages: 79-83
Study of arsenic flux effect on thermal desorption of GaAs native oxide and surface morphology
- Year: 2023
- Volume: 16
- Issue: 3.1
- 19
- 2185
- Pages: 74-78
Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates
- Year: 2023
- Volume: 16
- Issue: 3.1
- 16
- 2061
- Pages: 64-68
Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate
- Year: 2023
- Volume: 16
- Issue: 1.2
- 50
- 3045
- Pages: 179-184
Nanoscale layers of hexaferrite BaFe12O19 grown by laser molecular beam epitaxy: growth, crystal structure and magnetic properties
- Year: 2023
- Volume: 16
- Issue: 1.1
- 8
- 2489
- Pages: 363-368
Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy
- Year: 2023
- Volume: 16
- Issue: 1.1
- 24
- 2935
- Pages: 341-345
Formation of a dielectric sublayer heterostructure of lead-tin telluride
- Year: 2023
- Volume: 16
- Issue: 1.1
- 16
- 2651
- Pages: 158-161
Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates
- Year: 2022
- Volume: 15
- Issue: 3.3
- 27
- 3145
- Pages: 311-314
Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate
- Year: 2022
- Volume: 15
- Issue: 3.3
- 32
- 3223
- Pages: 281-284
Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
- Year: 2022
- Volume: 15
- Issue: 3.3
- 30
- 3210
- Pages: 157-162
Study of FIB-modified silicon areas by AFM and Raman spectroscopy
- Year: 2022
- Volume: 15
- Issue: 3.3
- 18
- 3133
- Pages: 59-63
Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si
- Year: 2022
- Volume: 15
- Issue: 3.3
- 21
- 3115
- Pages: 54-58
Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface
- Year: 2022
- Volume: 15
- Issue: 3.3
- 14
- 3029
- Pages: 48-53
Effect of FIB-modification of Si(111) surface on GaAs nanowire growth
- Year: 2022
- Volume: 15
- Issue: 3.3
- 13
- 3145
- Pages: 36-41
Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures
- Year: 2022
- Volume: 15
- Issue: 3.3
- 24
- 3349
- Pages: 31-35
Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction
- Year: 2022
- Volume: 15
- Issue: 3.2
- 25
- 3209
- Pages: 145-149
Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy
- Year: 2022
- Volume: 15
- Issue: 3.2
- 28
- 3185
- Pages: 75-79
The growth of gallium nitride layers with low dislocation density
- Year: 2012
- Issue: 4
- 0
- 6930
- Pages: 28-31