Articles by keywords "molecular beam epitaxy"
MBE growth of GaAs nanowires with a silicon rich particle on the top
Sibirev N.V.
Ilkiv I.V.
Ubyivovk E.V.
Soshnikov I.P.
Shtrom I.V.
Reznik R.R.
Brukhanova V.V.
Cirlin G.E.
- Year: 2025
- Volume: 18
- Issue: 4.1
- 1
- 177
- Pages: 62-66
Two bands in PL spectra of InGaN/GaN superlattice embedded in GaN nanowire
Subbotina E.A.
Subbotina A.S.
Serov A.Yu.
Filosofov N.G.
Gridchin V.O.
Sibirev N.V.
Cirlin G.E.
Shtrom I.V.
- Year: 2025
- Volume: 18
- Issue: 4.1
- 0
- 180
- Pages: 44-48
Structural and morphological characterization of InGaAs/InP 2.5 μm photodetector heterostructures with different metamorphic buffer layer profiles
Barantsev O.V.
Vasilkova E.I.
Pirogov E.V.
Dementev P.A.
Nevedomskiy V.N.
Karachinsky L.Ya.
Novikov I.I.
Sobolev M.S.
- Year: 2025
- Volume: 18
- Issue: 3.2
- 4
- 300
- Pages: 172-177
Formation of site-controlled InAs quantum dots on nanopatterned GaAs(111)B surfaces
Balakirev S.V.
Chernenko N.E.
Shandyba N.A.
Kirichenko D.V.
Dukhan D.D.
Eremenko M.M.
Solodovnik M.S.
- Year: 2025
- Volume: 18
- Issue: 3.2
- 5
- 337
- Pages: 115-118
Determination of the length of the 2×N superstructure during the synthesis of Ge on Si(001) at different temperatures
- Year: 2025
- Volume: 18
- Issue: 3.2
- 3
- 294
- Pages: 91-95
Localized Ga droplets formation on nanopatterned silicon substrates
- Year: 2025
- Volume: 18
- Issue: 3.2
- 3
- 302
- Pages: 57-59
Optical characterization and surface plasmon polariton mode simulation of GaN/InGaN nanowires on Ag/AlOx film for plasmonic nanolasers
Shugabaev T.
Kharchenko A.A.
Dautov A.M.
Kusnetsov A.
Lendyashova V.V.
Kryzhanovskaya N.V.
Reznik R.R.
Gridchin V.O.
Cirlin G.E.
- Year: 2025
- Volume: 18
- Issue: 3.1
- 4
- 305
- Pages: 278-282
Effect of GaAs buffer layer on the characteristics of GaAs nanowires grown by molecular beam epitaxy on Si(111) substrates
- Year: 2025
- Volume: 18
- Issue: 3.1
- 1
- 288
- Pages: 152-155
Ordered GaAs NW growth on Si(111) substrates modified by two-step FIB treatment
Shandyba N.A.
Eremenko M.M.
Dukhan D.D.
Chernenko N.E.
Kirichenko D.V.
Kugaevsky A.D.
Makhov I.S.
Kryzhanovskaya N.V.
Balakirev S.V.
Solodovnik M.S.
- Year: 2025
- Volume: 18
- Issue: 3.1
- 7
- 361
- Pages: 19-22
Infrared photodetectors based on InAsP epitaxial nanowires on silicon
Goltaev A. S.
Fedina S.V.
Fedorov V.V.
Mozharov A.M.
Novikova K.N.
Maksimova A.A.
Baranov A.I.
Kaveev A.K.
Pavlov A.V.
Miniv D.V.
Ustimenko R.V.
Vinnichenko M.Ya.
Mukhin I.S.
- Year: 2025
- Volume: 18
- Issue: 2
- 41
- 3923
- Pages: 9-21
Study of GaPN(As) layers grown by molecular beam epitaxy on silicon substrates
- Year: 2024
- Volume: 17
- Issue: 3.2
- 13
- 2542
- Pages: 275-278
Influence of the doping level in the absorption layer of InGaAs/InP 2.5 μm photodetectors on their electrical properties
Barantsev O.V.
Vasilkova E.I.
Pirogov E.V.
Shubina K.Yu.
Baranov A.I.
Voropaev K.O.
Vasil’ev A.A.
Karachinsky L.Ya.
Novikov I.I.
Sobolev M.S.
- Year: 2024
- Volume: 17
- Issue: 3.2
- 24
- 2476
- Pages: 182-186
Study of the formation mechanisms of Ge terraces on Si(100) during MBE using the RHEED method
- Year: 2024
- Volume: 17
- Issue: 3.2
- 11
- 2496
- Pages: 139-142
Numerical investigation of influence GaP nanowire geometry to light extraction efficiency of red light-emitting diode
- Year: 2024
- Volume: 17
- Issue: 3.2
- 20
- 2573
- Pages: 84-87
Influence of the wet-chemical treatment on the optical and structural properties of core-shell InGaN nanowires
Shugabaev T.
Gridchin V.O.
Kusnetsov A.
Kulagina A.S.
Khrebtov A.I.
Lendyashova V.V.
Reznik R.R.
Cirlin G.E.
- Year: 2024
- Volume: 17
- Issue: 3.1
- 18
- 2947
- Pages: 306-309
Ab initio study of In adsorption on AlxGa1–xAs substrates at the first stages of droplet epitaxy
- Year: 2024
- Volume: 17
- Issue: 3.1
- 14
- 3020
- Pages: 100-104
Study of the photoluminescence properties of subcritical InAs/GaAs quantum dots formed onto structured substrates
- Year: 2024
- Volume: 17
- Issue: 3.1
- 18
- 2791
- Pages: 79-83
Quantum dots formation by InGaAs decomposition onto a patterned GaAs surface
Chernenko N.E.
Makhov I.S.
Melnichenko I.A.
Yakunina K.D.
Balakirev S.V.
Kryzhanovskaya N.V.
Solodovnik M.S.
- Year: 2024
- Volume: 17
- Issue: 3.1
- 13
- 2789
- Pages: 38-42
Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si(111)
- Year: 2024
- Volume: 17
- Issue: 3.1
- 19
- 2782
- Pages: 28-33
The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique
- Year: 2024
- Volume: 17
- Issue: 2
- 45
- 4073
- Pages: 120-133
Germanium polytypes formation on AlGaAs nanowire surface
- Year: 2023
- Volume: 16
- Issue: 3.1
- 14
- 3937
- Pages: 289-293
Ab initio modelling of In wetting layer formation on As-stabilized GaAs during first stages of droplet epitaxy
- Year: 2023
- Volume: 16
- Issue: 3.1
- 10
- 4308
- Pages: 193-197
Effect of plasma-chemical treatment of Si(001) substrates on the subsequent epitaxial growth of GaAs
- Year: 2023
- Volume: 16
- Issue: 3.1
- 21
- 4165
- Pages: 122-127
Effect of temperature during homoepitaxial growth of Si on Si(100) on the character of reflection high-energy electron diffraction patterns
- Year: 2023
- Volume: 16
- Issue: 3.1
- 20
- 4177
- Pages: 112-116
Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth
- Year: 2023
- Volume: 16
- Issue: 3.1
- 16
- 4275
- Pages: 79-83
Study of arsenic flux effect on thermal desorption of GaAs native oxide and surface morphology
- Year: 2023
- Volume: 16
- Issue: 3.1
- 21
- 4233
- Pages: 74-78
Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates
Chernenko N.E.
Makhov I.S.
Balakirev S.V.
Kirichenko D.V.
Shandyba N.A.
Kryzhanovskaya N.V.
Solodovnik M.S.
- Year: 2023
- Volume: 16
- Issue: 3.1
- 18
- 4046
- Pages: 64-68
Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate
Bondarenko D.N.
Gridchin V.O.
Kotlyar K.P.
Reznik R.R.
Kirilenko D.A.
Baranov A.I.
Dragunova A.S.
Kryzhanovskaya N.V.
Maksimova A.A.
Cirlin G.E.
- Year: 2023
- Volume: 16
- Issue: 1.2
- 66
- 5216
- Pages: 179-184
Nanoscale layers of hexaferrite BaFe12O19 grown by laser molecular beam epitaxy: growth, crystal structure and magnetic properties
- Year: 2023
- Volume: 16
- Issue: 1.1
- 12
- 4538
- Pages: 363-368
Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy
- Year: 2023
- Volume: 16
- Issue: 1.1
- 30
- 4983
- Pages: 341-345
Formation of a dielectric sublayer heterostructure of lead-tin telluride
- Year: 2023
- Volume: 16
- Issue: 1.1
- 19
- 4661
- Pages: 158-161
Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates
- Year: 2022
- Volume: 15
- Issue: 3.3
- 32
- 5379
- Pages: 311-314
Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate
- Year: 2022
- Volume: 15
- Issue: 3.3
- 38
- 5452
- Pages: 281-284
Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
Sinitskaya O.A.
Shubina K.Yu.
Mokhov D.V.
Uvarov A.V.
Filatov V.V.
Mizerov A.M.
Timoshnev S.N.
Nikitina E.V.
- Year: 2022
- Volume: 15
- Issue: 3.3
- 35
- 5201
- Pages: 157-162
Study of FIB-modified silicon areas by AFM and Raman spectroscopy
Nikitina L.S.
Lakhina E.A.
Eremenko M.M.
Balakirev S.V.
Chernenko N.E.
Shandyba N.A.
Solodovnik M.S.
Ageev O.A.
- Year: 2022
- Volume: 15
- Issue: 3.3
- 23
- 5168
- Pages: 59-63
Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si
- Year: 2022
- Volume: 15
- Issue: 3.3
- 24
- 5179
- Pages: 54-58
Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface
- Year: 2022
- Volume: 15
- Issue: 3.3
- 17
- 5121
- Pages: 48-53
Effect of FIB-modification of Si(111) surface on GaAs nanowire growth
- Year: 2022
- Volume: 15
- Issue: 3.3
- 15
- 5272
- Pages: 36-41
Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures
- Year: 2022
- Volume: 15
- Issue: 3.3
- 26
- 5522
- Pages: 31-35
Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction
- Year: 2022
- Volume: 15
- Issue: 3.2
- 30
- 5317
- Pages: 145-149
Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy
- Year: 2022
- Volume: 15
- Issue: 3.2
- 32
- 5248
- Pages: 75-79
The growth of gallium nitride layers with low dislocation density
- Year: 2012
- Issue: 4
- 0
- 8806
- Pages: 28-31