Articles by keywords "Semiconductor"
Spin-lattice relaxation processes of nuclear spins in GaAs:Mn
- Year: 2025
- Volume: 18
- Issue: 1.1
- 18
- 141
- Pages: 6-10
Study of GaPN(As) layers grown by molecular beam epitaxy on silicon substrates
- Year: 2024
- Volume: 17
- Issue: 3.2
- 7
- 633
- Pages: 275-278
Photocatalytic properties of Ag-AgBr nanostructures formed by ion-exchange in photo-thermo-refractive glass for water-dye degradation
- Year: 2024
- Volume: 17
- Issue: 3.1
- 6
- 862
- Pages: 302-305
GaN based ultraviolet narrowband photodetectors
- Year: 2024
- Volume: 17
- Issue: 3.1
- 6
- 862
- Pages: 220-223
Quantum state preparation with optical injection: Issue of intersymbol interference
- Year: 2024
- Volume: 17
- Issue: 3.1
- 5
- 932
- Pages: 173-177
Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range
- Year: 2024
- Volume: 17
- Issue: 1.1
- 19
- 1663
- Pages: 143-148
Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy
- Year: 2024
- Volume: 17
- Issue: 1.1
- 33
- 1733
- Pages: 62-67
Dynamics of electron-nuclear spin system in GaAs:Mn epitaxial layers
- Year: 2024
- Volume: 17
- Issue: 1.1
- 22
- 1924
- Pages: 31-36
Creation of an automated system for adjusting the position of the laser radiation axis for the air communication channel
- Year: 2023
- Volume: 16
- Issue: 3.2
- 9
- 2073
- Pages: 377-382
Photoluminescence anisotropy in hybrid nanostructures based on gallium phosphide nanowire and 2D transition metal dichalcogenides
Anikina M.A.
Kusnetsov A.
Toksumakov A.N.
Dremov V.V.
Ghazaryan D.A.
Fedorov V.V.
Arsenin А.V.
Volkov V.S.
Bolshakov A.D.
- Year: 2023
- Volume: 16
- Issue: 3.2
- 11
- 2151
- Pages: 130-136
The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
- Year: 2023
- Volume: 16
- Issue: 3.1
- 11
- 2161
- Pages: 439-443
Germanium polytypes formation on AlGaAs nanowire surface
- Year: 2023
- Volume: 16
- Issue: 3.1
- 12
- 2262
- Pages: 289-293
Research of the photoelectric parameters of ZnO/Cu2O heterojunction solar cells
- Year: 2023
- Volume: 16
- Issue: 3.1
- 11
- 2351
- Pages: 221-226
Temperature dependence of the energy spectrum of metamorphic InSb/In(Ga,Al)As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy
- Year: 2023
- Volume: 16
- Issue: 3.1
- 26
- 2355
- Pages: 47-52
Development of the surface morphology of germanium upon irradiation with gallium ions
- Year: 2023
- Volume: 16
- Issue: 3.1
- 20
- 2774
- Pages: 21-25
A theoretical study of macromolecule interaction with the quasi-free-standing and epitaxial graphene formed on the silicon carbide polytypes
- Year: 2023
- Volume: 16
- Issue: 3
- 186
- 3167
- Pages: 87-94
Influence of stimulated interband emission on terahertz photoluminescence in n-type gallium arsenide layers
- Year: 2023
- Volume: 16
- Issue: 3
- 190
- 3100
- Pages: 29-38
The plasmon resonance in the cadmium selenide semiconductor nanocrystals with different doping types
- Year: 2023
- Volume: 16
- Issue: 2
- 17
- 3374
- Pages: 27-51
Optical properties of single InGaN nanowires with core-shell structure
Komarov S.D.
Gridchin V.O.
Lendyashova V.V.
Kotlyar K.P.
Reznik R.R.
Dvoretskaya N.V.
Dragunova A.S.
Makhov I.S.
Nadtochiy A.M.
Kryzhanovskaya N.V.
Cirlin G.E.
Zhukov A.E.
- Year: 2023
- Volume: 16
- Issue: 1.2
- 41
- 3125
- Pages: 114-120
Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy
- Year: 2023
- Volume: 16
- Issue: 1.1
- 24
- 3141
- Pages: 341-345
Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface
Reznik R.R.
Gridchin V.O.
Kotlyar K.P.
Dragunova A.S.
Kryzhanovskaya N.V.
Samsonenko Yu.B.
Soshnikov I.P.
Khrebtov A.I.
Cirlin G.E.
- Year: 2023
- Volume: 16
- Issue: 1.1
- 17
- 2806
- Pages: 153-157
Experimental study of all-van-der-Waals waveguide polaritons at room temperature
- Year: 2022
- Volume: 15
- Issue: 3.3
- 13
- 3321
- Pages: 223-225
Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
Sinitskaya O.A.
Shubina K.Yu.
Mokhov D.V.
Uvarov A.V.
Filatov V.V.
Mizerov A.M.
Timoshnev S.N.
Nikitina E.V.
- Year: 2022
- Volume: 15
- Issue: 3.3
- 32
- 3381
- Pages: 157-162
Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction
- Year: 2022
- Volume: 15
- Issue: 3.2
- 25
- 3405
- Pages: 145-149
Dependence of light-addressable potentiometric sensor sensitivity on photo-induced processes in Si
- Year: 2022
- Volume: 15
- Issue: 3.2
- 18
- 3248
- Pages: 135-139
Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy
- Year: 2022
- Volume: 15
- Issue: 3.2
- 28
- 3371
- Pages: 75-79
The topical trends in semiconductor and nanostructure physics, semiconductor opto- and nanoelectronics (on the 18th All-Russion Youth Conference)
- Year: 2017
- Volume: 10
- Issue: 2
- 69
- 7438
- Pages: 123-132
A fiber-optic doppler blood flow-velocity sensor
- Year: 2017
- Volume: 10
- Issue: 1
- 128
- 7376
- Pages: 64-70
Resultes of 17-th Аll-Russian youth conference on semiconductor and nanoctructure physics and semiconductor opto- and nanoelectronics
- Year: 2016
- Issue: 1
- 242
- 7456
- Pages: 98-108
The energy spectrum of PbBi4Te7 on evidence derived from light reflection and absorption coefficients
- Year: 2015
- Issue: 3
- 393
- 7606
- Pages: 9-23
Structural features of indium antimonide quantum dots on the indium arsenide substrate
- Year: 2015
- Issue: 2
- 365
- 7902
- Pages: 11-18
The results of the 16-th All-Russian Youth Conference on Semiconductor and Nanostructure Physics and Semiconductor Opto- and Nanoelectronics
- Year: 2015
- Issue: 1
- 275
- 7122
- Pages: 158-166
Local analysis of semiconductor nanoobjects by scanning tunneling atomic force microscopy
- Year: 2015
- Issue: 1
- 600
- 7656
- Pages: 31-42
The influence of natural irregularities on surface electron scattering
- Year: 2014
- Issue: 4
- 267
- 7663
- Pages: 48-54
he intervalley electron-phonon scattering in the A[III]B[V] crystal
- Year: 2009
- Issue: 2
- 0
- 7537
- Pages: 34-38
The influence of temperature and electric field on emission of carriers out of the InAs/CaAs quantum dots
- Year: 2009
- Issue: 2
- 0
- 6969
- Pages: 11-14
Temperature effects upon coherence of semiconductor lasers emission
- Year: 2013
- Issue: 4
- 628
- 7997
- Pages: 93-99
The Xlllth All-Russian Young-People Conference on Semiconductor Physics and Nanostructures, Semiconductor Opto- and Nanoelectronics
- Year: 2012
- Issue: 1
- 0
- 7344
- Pages: 184-187
Resonance electron scattering by the surface of semiconductor with the natural nonuniformities
- Year: 2013
- Issue: 1
- 533
- 8328
- Pages: 101-107
Slow electrons scattering by fluctuation potential of semiconductor
- Year: 2013
- Issue: 1
- 471
- 7945
- Pages: 93-100