Articles by keywords "фотолюминесценция"
Ultraviolet photoluminescence enhancement of zinc oxide nanocrystals in colloidal mixtures with spark discharge aluminum nanoparticles
- Year: 2023
- Volume: 16
- Issue: 3.2
- 6
- 664
- Pages: 261-266
Quantum dot-induced photoluminescence enhancement of InGaN nanowires
- Year: 2023
- Volume: 16
- Issue: 3.2
- 3
- 598
- Pages: 255-260
Photoluminescence anisotropy in hybrid nanostructures based on gallium phosphide nanowire and 2D transition metal dichalcogenides
- Year: 2023
- Volume: 16
- Issue: 3.2
- 4
- 540
- Pages: 130-136
Towards versatile photonics based on GaP nanowires decorated with carbon dots
- Year: 2023
- Volume: 16
- Issue: 3.1
- 5
- 718
- Pages: 187-192
Deep-Level Emission Tailoring in ZnO Nanostructures Grown via Hydrothermal Synthesis
- Year: 2023
- Volume: 16
- Issue: 3.1
- 9
- 619
- Pages: 176-181
The features in the formation of oxide porous structures based on SiO2–SnOх
- Year: 2023
- Volume: 16
- Issue: 3.1
- 14
- 680
- Pages: 10-15
Influence of stimulated interband emission on terahertz photoluminescence in n-type gallium arsenide layers
- Year: 2023
- Volume: 16
- Issue: 3
- 84
- 1214
- Pages: 29-38
Synthesis and PL study of Sr3 (VO4 ) 2 :Eu3+ phosphor for W-LED application
- Year: 2023
- Volume: 16
- Issue: 2
- 20
- 1369
- Pages: 61-67
Suppression of molecular anyon states in the magneto-photoluminescence spectra of InP/GaInP2 quantum dots at a temperature of 30 K
- Year: 2023
- Volume: 16
- Issue: 1.3
- 9
- 1259
- Pages: 112-116
Interband photoluminescence of InAs(P)/Si nanowires
- Year: 2023
- Volume: 16
- Issue: 1.3
- 15
- 1251
- Pages: 101-107
Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band
- Year: 2023
- Volume: 16
- Issue: 1.3
- 17
- 1305
- Pages: 33-38
Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers
- Year: 2023
- Volume: 16
- Issue: 1.3
- 30
- 1246
- Pages: 14-19
Дислокационная фотолюминесценция в самоимплантированном кремнии с различными ориентациями поверхности
- Year: 2023
- Volume: 16
- Issue: 1.1
- 10
- 1284
- Pages: 162-166
Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method
- Year: 2023
- Volume: 16
- Issue: 1.1
- 21
- 1352
- Pages: 22-27
Near-infrared photoluminescence in n-GaAs/AlGaAs quantum wells with different locations of compensating acceptor impurity
- Year: 2022
- Volume: 15
- Issue: 4
- 74
- 1937
- Pages: 32-43
Photoluminescence from lead halide perovskite superlattices
- Year: 2022
- Volume: 15
- Issue: 3.3
- 19
- 1710
- Pages: 326-329
Peculiarities of the luminescence response of two-dimensional photonic crystals with ordered Ge(Si) nanoislands obtained using different ordering approaches
- Year: 2022
- Volume: 15
- Issue: 3.3
- 11
- 1620
- Pages: 188-193
Effect of gamma radiation on luminescence and photoconductivity of MEH-PPV – lead sulfide nanocomposite
- Year: 2018
- Volume: 11
- Issue: 4
- 23
- 6111
- Pages: 35-46
Effect of gamma radiation on the thin nanocomposite MEH-PPV/C60 films
- Year: 2018
- Volume: 11
- Issue: 4
- 33
- 6073
- Pages: 24-34
Excitonic photolumenescence kinetics of GaAs/AlGaAs structures with shallow quantum wells at low temperatures
- Year: 2010
- Issue: 3
- 0
- 5765
- Pages: 58-62
Exitons condensation in quasi-2D SiGe layers - Si/Si1-xGex/Si heterostructures
- Year: 2010
- Issue: 3
- 0
- 5950
- Pages: 7-13
Gamma-induced effect on the luminescence of nanocomposites of MEH-PPV conductive polymer with lead sulphide quantum dots
- Year: 2018
- Volume: 11
- Issue: 2
- 25
- 6013
- Pages: 41-48
The structure of ZnTPP, ZnTPP-C60 thin films and X-ray effect on their photoluminescence
- Year: 2018
- Volume: 11
- Issue: 2
- 31
- 6203
- Pages: 26-40
Properties of the semiconductor structure with a p–n-junction created in a porous silicon film under laser radiation
- Year: 2018
- Volume: 11
- Issue: 1
- 29
- 6287
- Pages: 18-25
Auger-recombination effect on the nonequilibrium charge carriers concentration in InGaAsSb /AlGaAsSb quantum wells
- Year: 2016
- Issue: 4
- 113
- 5824
- Pages: 66-76
Synthesis and luminescence properties OF Ca5(PO4)3Cl:Eu2+ phosphor for solid state lighting
- Year: 2016
- Issue: 1
- 268
- 6308
- Pages: 41-47
Near- and far-infrared emission from GaAs/AlGaAs quantum wells under interband optical excitation
- Year: 2013
- Issue: 4
- 426
- 6358
- Pages: 109-114
Photoluminescence and Raman scattering in periodic arrays of silicon nanoinclusions in zirconia dioxide
- Year: 2010
- Issue: 1
- 0
- 5833
- Pages: 71-78
Energy spectrum and optical transitions in CdHgTe nanoheterostructures
- Year: 2012
- Issue: 2
- 1
- 5882
- Pages: 69-73
Features of energy spectra and properties of polycrystalline Pb[1-x]Cd[x]Se films formed on calcium fluoride and glass substrates
- Year: 2012
- Issue: 2
- 0
- 5467
- Pages: 7-17
Improvement and stabilization of optical characteristics of the porous silicon
- Year: 2013
- Issue: 2
- 659
- 6532
- Pages: 130-136