Articles by keywords "фотолюминесценция"
The role of charge carrier diffusion in halide perovskite luminophores with memory for optical computing
- Year: 2026
- Volume: 19
- Issue: 1.1
- 1
- 33
- Pages: 156-161
Second harmonic generation in iodine quasi-2D halide perovskite crystals
- Year: 2026
- Volume: 19
- Issue: 1.1
- 1
- 42
- Pages: 151-155
Investigation of self-hybridized waveguide exciton-polaritons in the two-dimensional antiferromagnet CrSBr at room temperature
- Year: 2026
- Volume: 19
- Issue: 1.1
- 0
- 34
- Pages: 146-150
Perovskite microwires generating red laser emission
- Year: 2026
- Volume: 19
- Issue: 1.1
- 1
- 41
- Pages: 81-85
Interband absorption and photoluminescence in lens-shaped quantum dots: an adiabatic approach
- Year: 2026
- Volume: 19
- Issue: 1.1
- 0
- 36
- Pages: 69-74
Photoluminescence control of WSe₂ monolayers integrated with plasmon nanobumps via strain engineering
- Year: 2026
- Volume: 19
- Issue: 1.1
- 1
- 39
- Pages: 56-63
Photoluminescence and photoreflectance of long-wavelength HgTe/CdHgTe heterostructure
- Year: 2026
- Volume: 19
- Issue: 1.1
- 0
- 36
- Pages: 51-55
The influence of diamond origin on the properties of NV centers
- Year: 2026
- Volume: 19
- Issue: 1.1
- 0
- 39
- Pages: 27-32
Photoluminescence and photoreflectance of annealed HgCdTe films with high CdTe content
- Year: 2026
- Volume: 19
- Issue: 1.1
- 3
- 46
- Pages: 6-11
Two bands in PL spectra of InGaN/GaN superlattice embedded in GaN nanowire
- Year: 2025
- Volume: 18
- Issue: 4.1
- 3
- 597
- Pages: 44-48
Investigation of metal-enhanced photoluminescence of zinc oxide films induced by platinum nanoparticles of different sizes
- Year: 2025
- Volume: 18
- Issue: 3.2
- 3
- 681
- Pages: 247-252
Effect of rapid thermal annealing on the properties of GaPN(As)-based heterostructures grown on silicon substrates
- Year: 2025
- Volume: 18
- Issue: 3.2
- 6
- 662
- Pages: 45-48
Optical characterization and surface plasmon polariton mode simulation of GaN/InGaN nanowires on Ag/AlOx film for plasmonic nanolasers
- Year: 2025
- Volume: 18
- Issue: 3.1
- 4
- 681
- Pages: 278-282
Phase control of quasi-2D halide perovskite by post-treatment and antisolvent treatment techniques
- Year: 2025
- Volume: 18
- Issue: 3.1
- 9
- 699
- Pages: 263-267
Structural and optical properties of InP layers obtained by plasma-enhanced atomic layer deposition at different temperatures
- Year: 2025
- Volume: 18
- Issue: 3.1
- 3
- 708
- Pages: 247-251
Optical studies of InGaAs/GaAs quantum well mesa structures passivated with sol-gel SiO2
- Year: 2025
- Volume: 18
- Issue: 3.1
- 4
- 674
- Pages: 237-241
Optical properties of aluminum nanostructures modified by polymer coatings
- Year: 2025
- Volume: 18
- Issue: 3.1
- 4
- 640
- Pages: 232-236
Photoluminescence of InGaAs/InAlAs short-period superlattices grown on InP substrate
- Year: 2025
- Volume: 18
- Issue: 3.1
- 0
- 714
- Pages: 95-98
Optical studies of InAs/InAsSb/InAsSbP heterostructures
- Year: 2025
- Volume: 18
- Issue: 3.1
- 5
- 676
- Pages: 91-94
Hybrid emitters based on two-dimensional WSe2 and ordered plasmonic nanobumps
- Year: 2025
- Volume: 18
- Issue: 3.1
- 7
- 771
- Pages: 30-35
Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs
- Year: 2025
- Volume: 18
- Issue: 1.1
- 22
- 3908
- Pages: 105-110
Optical characteristics of Hg0.7Cd0.3Te films with etched graded-gap surface layer
- Year: 2025
- Volume: 18
- Issue: 1.1
- 27
- 4031
- Pages: 34-39
Fluorescent properties of boron nitride quantum dots depending on functionalizing ligands
- Year: 2024
- Volume: 17
- Issue: 3.2
- 25
- 2869
- Pages: 297-300
Growth of long core-shell InGaN nanowires by plasma-assisted molecular beam epitaxy with gradually increasing substrate temperature
- Year: 2024
- Volume: 17
- Issue: 3.2
- 17
- 2670
- Pages: 143-147
Photoluminescence of self-induced InAs nanowires diluted with nitrogen
- Year: 2024
- Volume: 17
- Issue: 3.1
- 15
- 3257
- Pages: 34-37
Formation and light-emitting properties of ion-synthesized Ga2O3 nanoinclusions in the Al2O3/Si matrix
- Year: 2024
- Volume: 17
- Issue: 1.1
- 21
- 3726
- Pages: 171-177
Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range
- Year: 2024
- Volume: 17
- Issue: 1.1
- 21
- 3615
- Pages: 143-148
Luminescence in nanostructures with compensated quantum wells under optical and electrical pumping
- Year: 2024
- Volume: 17
- Issue: 1.1
- 27
- 4220
- Pages: 68-76
Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers
- Year: 2024
- Volume: 17
- Issue: 1.1
- 28
- 4348
- Pages: 43-48
Ultraviolet photoluminescence enhancement of zinc oxide nanocrystals in colloidal mixtures with spark discharge aluminum nanoparticles
- Year: 2023
- Volume: 16
- Issue: 3.2
- 16
- 4911
- Pages: 261-266
Quantum dot-induced photoluminescence enhancement of InGaN nanowires
- Year: 2023
- Volume: 16
- Issue: 3.2
- 13
- 4533
- Pages: 255-260
Photoluminescence anisotropy in hybrid nanostructures based on gallium phosphide nanowire and 2D transition metal dichalcogenides
- Year: 2023
- Volume: 16
- Issue: 3.2
- 15
- 4568
- Pages: 130-136
Towards versatile photonics based on GaP nanowires decorated with carbon dots
- Year: 2023
- Volume: 16
- Issue: 3.1
- 24
- 4629
- Pages: 187-192
Deep-Level Emission Tailoring in ZnO Nanostructures Grown via Hydrothermal Synthesis
- Year: 2023
- Volume: 16
- Issue: 3.1
- 23
- 4535
- Pages: 176-181
The features in the formation of oxide porous structures based on SiO2–SnOх
- Year: 2023
- Volume: 16
- Issue: 3.1
- 23
- 4900
- Pages: 10-15
Influence of stimulated interband emission on terahertz photoluminescence in n-type gallium arsenide layers
- Year: 2023
- Volume: 16
- Issue: 3
- 216
- 5384
- Pages: 29-38
Synthesis and PL study of Sr3 (VO4 ) 2 :Eu3+ phosphor for W-LED application
- Year: 2023
- Volume: 16
- Issue: 2
- 33
- 5779
- Pages: 61-67
Suppression of molecular anyon states in the magneto-photoluminescence spectra of InP/GaInP2 quantum dots at a temperature of 30 K
- Year: 2023
- Volume: 16
- Issue: 1.3
- 17
- 4816
- Pages: 112-116
Interband photoluminescence of InAs(P)/Si nanowires
- Year: 2023
- Volume: 16
- Issue: 1.3
- 34
- 5015
- Pages: 101-107
Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band
- Year: 2023
- Volume: 16
- Issue: 1.3
- 23
- 5143
- Pages: 33-38
Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers
- Year: 2023
- Volume: 16
- Issue: 1.3
- 42
- 4793
- Pages: 14-19
Дислокационная фотолюминесценция в самоимплантированном кремнии с различными ориентациями поверхности
- Year: 2023
- Volume: 16
- Issue: 1.1
- 15
- 5058
- Pages: 162-166
Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method
- Year: 2023
- Volume: 16
- Issue: 1.1
- 34
- 5420
- Pages: 22-27
Near-infrared photoluminescence in n-GaAs/AlGaAs quantum wells with different locations of compensating acceptor impurity
- Year: 2022
- Volume: 15
- Issue: 4
- 86
- 6191
- Pages: 32-43
Photoluminescence from lead halide perovskite superlattices
- Year: 2022
- Volume: 15
- Issue: 3.3
- 30
- 5415
- Pages: 326-329
Peculiarities of the luminescence response of two-dimensional photonic crystals with ordered Ge(Si) nanoislands obtained using different ordering approaches
- Year: 2022
- Volume: 15
- Issue: 3.3
- 18
- 5376
- Pages: 188-193
Effect of gamma radiation on luminescence and photoconductivity of MEH-PPV – lead sulfide nanocomposite
- Year: 2018
- Volume: 11
- Issue: 4
- 25
- 9873
- Pages: 35-46
Effect of gamma radiation on the thin nanocomposite MEH-PPV/C60 films
- Year: 2018
- Volume: 11
- Issue: 4
- 35
- 9907
- Pages: 24-34
Exitons condensation in quasi-2D SiGe layers - Si/Si1-xGex/Si heterostructures
- Year: 2010
- Issue: 3
- 0
- 9663
- Pages: 7-13
Gamma-induced effect on the luminescence of nanocomposites of MEH-PPV conductive polymer with lead sulphide quantum dots
- Year: 2018
- Volume: 11
- Issue: 2
- 26
- 9726
- Pages: 41-48
The structure of ZnTPP, ZnTPP-C60 thin films and X-ray effect on their photoluminescence
- Year: 2018
- Volume: 11
- Issue: 2
- 33
- 10127
- Pages: 26-40
Properties of the semiconductor structure with a p–n-junction created in a porous silicon film under laser radiation
- Year: 2018
- Volume: 11
- Issue: 1
- 31
- 10043
- Pages: 18-25
Synthesis and luminescence properties OF Ca5(PO4)3Cl:Eu2+ phosphor for solid state lighting
- Year: 2016
- Issue: 1
- 273
- 10064
- Pages: 41-47
Near- and far-infrared emission from GaAs/AlGaAs quantum wells under interband optical excitation
- Year: 2013
- Issue: 4
- 430
- 10002
- Pages: 109-114
Energy spectrum and optical transitions in CdHgTe nanoheterostructures
- Year: 2012
- Issue: 2
- 1
- 9421
- Pages: 69-73
Improvement and stabilization of optical characteristics of the porous silicon
- Year: 2013
- Issue: 2
- 660
- 10142
- Pages: 130-136