SPbPU Journal - Physics and Mathematics
St. Petersburg Polytechnic University Journal: Physics and Mathematics Peter the Great St. Petersburg Polytechnic University
en Английский
Version for the visually impaired
Since 2008
ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
Year: 2025 Volume: 18 Issue: 1.1
Pages: 159
267 10963
Submit Your Paper
Full text
XML
Latest issues

Spin-lattice relaxation processes of nuclear spins in GaAs:Mn

Bulk properties of semiconductors
Berdnikov V.S. Kavokin K.V. Kuznetsova M.S. Litvyak V.M Bazhin P.S.
  • 27
  • 468
  • Pages: 6-10

Non-ideal experimental Berry phase in the topological insulator Bi2Se3 single crystal

Bulk properties of semiconductors
Fominykh B.M. Irkhin V.Yu. Perevalova A.N. Naumov S.V. Marchenkov V.V.
  • 21
  • 549
  • Pages: 11-16

Epitaxial growth AlGaAs from Bi-containing melts

Structure growth, surface, and interfaces
Khvostikova O.A. Kornienko P.D. Khvostikov V.P. Salii R.A.
  • 4
  • 440
  • Pages: 17-21

Nanostructured engineering of ZnO:Cu:Al nanomaterials for sensor and photocatalytic applications

Structure growth, surface, and interfaces
Yakushova N.D. Filippov I.A. Karmanov A.A. Gubich I.A. Pronin I.A.
  • 6
  • 444
  • Pages: 22-27

Frontal surface passivation of the photovoltaic converter based on narrow-band materials

Structure growth, surface, and interfaces
Sorokina S.V. Khvostikova O.A. Kornienko P.D. Khvostikov V.P.
  • 5
  • 448
  • Pages: 28-33

Optical characteristics of Hg0.7Cd0.3Te films with etched graded-gap surface layer

Structure growth, surface, and interfaces
Ruzhevich M.S. Mynbaev K.D. Firsov D.D. Chumanov I.V. Komkov O.S. Varavin V.S. Yakushev M.V.
  • 8
  • 418
  • Pages: 34-39

Structural and electrophysical properties of barium titanate epitaxial films

Structure growth, surface, and interfaces
Ladanova J.A. Zagorodneva V.N. Dvortsova P.A. Suturin S.M. Fedorov V.V. Ustinov A. B. Sakharov V.I. Sokolov N.S.
  • 2
  • 450
  • Pages: 40-45

Sheet resistance of AlGaN/GaN heterostructures with barriers of increased Al content

Heterostructures, superlattices, quantum wells
Arteev D.S. Sakharov A.V. Nikolaev A.E. Zavarin E.E. Nikitina E.V. Tsatsulnikov A.F.
  • 6
  • 416
  • Pages: 46-51

Magnetic field effect on interface states in ZnSe/BeTe quantum well structures with no common atom

Heterostructures, superlattices, quantum wells
Zedomi T.E. Belova D.D. Kotova L.V. Kochereshko V.P.
  • 5
  • 399
  • Pages: 52-57

Effect of different types of phonons on the two-dimensional electron gas heating at GaN/AlGaN heterointerface

Heterostructures, superlattices, quantum wells
Melentyev G.A. Vinnichenko M.Ya. Karaulov D.A. Firsov D.A.
  • 11
  • 431
  • Pages: 58-66

Effect of illumination on positive magnetoresistance of high-mobility two-dimensional electron gas in GaAs/AlAs heterostructure

Heterostructures, superlattices, quantum wells
Betke I.A. Strygin I.S. Kolosovsky E.A. Bykov A.A.
  • 8
  • 426
  • Pages: 67-71

Analysis of charge transport in a tunnel junction based on magnetic insulator CrCl3

Heterostructures, superlattices, quantum wells
Bakhmetiev M.V. Chiglintsev E. Barulina E.Y. Shevyakova K.V. Morozov A.D. Kleshch V.I. Chernov A.
  • 5
  • 422
  • Pages: 72-76

Fluorescence of hybrid structures based on carbon dots and GaP, GaN, Si nanowires

Quantum wires, quantum dots, and other low-dimensional systems
Kozko I.A. Karaseva E.P. Svinkin N.А. Rider М.А. Vyacheslavova E.A. Gridchin V.O. Fedorov V.V. Kondratev V.M. Bolshakov A.D.
  • 2
  • 405
  • Pages: 77-82

Polarized Raman scattering in strained GaN nanowires

Quantum wires, quantum dots, and other low-dimensional systems
Sharov V.A.
  • 2
  • 378
  • Pages: 83-87

Impact of geometry on semiconductor quantum dots optical properties

Quantum wires, quantum dots, and other low-dimensional systems
Avetisyan A.H. Vinnichenko M.Ya. Hakobyan E.S.
  • 6
  • 401
  • Pages: 88-94

Narrow-band fluorescence of silicon-vacancy color centers in nanodiamonds placed in ring microresonator

Quantum wires, quantum dots, and other low-dimensional systems
Zhivopistsev А.А. Romshin A.M. Pasternak D.G. Kalashnikov D. Bagramov R.Kh. Filonenko V.P. Vlasov I.I.
  • 5
  • 419
  • Pages: 95-99

Near-UV detectors based on ultrathin GaN epitaxial layers

Optoelectronic and nanoelectronic devices
Shubina K.Yu. Sinitskaya O.A. Enns Ya.B. Mizerov A.M. Nikitina E.V.
  • 3
  • 393
  • Pages: 100-104

Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs

Optoelectronic and nanoelectronic devices
Kirilenko I.D. Ruzhevich M.S. Romanov V.V. Moiseev K.D. Dorogov M.V. Tomkovich M.V. Firsov D.D. Chumanov I.V. Komkov O.S. Mynbaev K.D.
  • 6
  • 402
  • Pages: 105-110

Optimizing the front contact grid parameters of рhotovoltaic laser power converters

Optoelectronic and nanoelectronic devices
Malevskaya A.D. Mintairov M.A. Evstropov V.V. Malevskiy D.A. Malevskaya A.V. Kalyuzhniy N.A.
  • 5
  • 393
  • Pages: 111-116

Increase in the modulation bandwidth of the high-speed VCSEL 1550 nm by active region p-type doping

Optoelectronic and nanoelectronic devices
Gladyshev A.G. Andryushkin V.V. Kovach Ya.N. Babichev A.V. Voropaev K.O. Egorov A.Yu. Karachinsky L.Ya.
  • 10
  • 406
  • Pages: 117-121

WOx/WS2 nanocomposites for room temperature gas sensors

Optoelectronic and nanoelectronic devices
Zyryanova O.D. Nalimova S.S. Kondratev V.M. Bui C.D. Moshnikov V.A.
  • 10
  • 445
  • Pages: 122-127

Effect of temperature on the spectral linewidth of 89X nm-range single-mode VCSELs

Optoelectronic and nanoelectronic devices
Kovach Ya.N. Blokhin S.A. Bobrov M.A. Blokhin A.A. Maleev N.A. Vasil’ev A.P.
  • 5
  • 404
  • Pages: 128-133

Influence of Ge nanolayers on the resistive switching effect in amorphous hydrogenated silicon based structures

Optoelectronic and nanoelectronic devices
Cheng Y. Kamaev G.N. Popov A.A. Volodin V.A.
  • 1
  • 376
  • Pages: 134-139

Dependence of static and dynamic characteristics of high-voltage pulsed p–i–n diodes on the composition of heteroepitaxial AlxGa1−xAs1−ySby base layers

Optoelectronic and nanoelectronic devices
Soldatenkov F.Yu. Pugovkin A.A. Ivanov A.E. Malevskiy D.A. Levin S.V.
  • 6
  • 394
  • Pages: 140-144

Silicon nanowire based sensorics of acids and bases

Optoelectronic and nanoelectronic devices
Svinkin N.А. Kondratev V.M. Polozkov R.G. Novikova K.N. Zubov Fedor I. Mozharov A.M. Bolshakov A.D.
  • 8
  • 400
  • Pages: 145-151

Study of resonator optical properties of perylene microcrystals

Novel materials
Smirnov K.A. Zhaboev E.I. Mitetelo N.V. Maydykovskiy A.I. Murzina T.V.
  • 9
  • 436
  • Pages: 152-157

Сообщить автору об опечатке:

Адрес страницы с ошибкой:

Текст с ошибкой:

Ваш комментарий или корректная версия: