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SPbPU Journal - Physics and Mathematics
St. Petersburg Polytechnic University Journal: Physics and Mathematics
Peter the Great St. Petersburg Polytechnic University
Since 2008
ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
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Articles
Year: 2024
Volume: 17
Issue: 1.1
Pages: 179
215
6581
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2024
,
Volume 17
Issue 1.1
2024
,
Volume 17
Issue 1
Full text
2023
,
Volume 16
Issue 4
Full text
2023
,
Volume 16
Issue 3.2
Full text
Spin-dependent photon echo for an ensemble of three-level systems
Bulk properties of semiconductors
Zhilyakov V.L.
Yugova I.A.
16
244
Pages: 6-11
Optical properties of GaN epitaxial layers in mid- and far-infrared ranges
Bulk properties of semiconductors
Melentyev G.A.
Karaulov D.A.
Kostromin N.A.
Vinnichenko M.Ya.
Firsov D.A.
Shalygin V.A.
12
251
Pages: 12-19
Features of isovalent doping of gallium arsenide with bismuth ions
Bulk properties of semiconductors
Zdoroveyshchev D.A.
Vikhrova O.V.
Danilov Yu.A.
Dudin Yu.A.
Zdoroveyshchev A.V.
Parafin A.E.
Drozdov M.N.
4
245
Pages: 20-24
Destruction of the conducting state by ac electric field in naphthalocyanine complexes
Bulk properties of semiconductors
Pshenichnyi V.A.
Dubinina T.V.
Drozdov K.A.
5
228
Pages: 25-30
Dynamics of electron-nuclear spin system in GaAs:Mn epitaxial layers
Bulk properties of semiconductors
Berdnikov V.S.
Kuznetsova M.S.
Kavokin K.V.
Dzhioev R.I.
9
255
Pages: 31-36
Investigation of nanosized structures using internal friction effect
Structure growth, surface, and interfaces
Kozodaev D.A.
Novikov I.A.
Moshnikov V.A.
4
252
Pages: 37-42
Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers
Structure growth, surface, and interfaces
Osinnykh I.V.
Malin T.V.
Milakhin D.S.
Zhuravlev K.V.
5
244
Pages: 43-48
Electron irradiation as a method for controlling luminescence of hexagonal boron nitride
Structure growth, surface, and interfaces
Gogina O.A.
Petrov Yu.V.
Vyvenko O.F.
Kovalchuk S.
Bolotin K.
5
238
Pages: 49-54
Effects of resonant tunneling in GaAs/AlAs heterostructure
Heterostructures, superlattices, quantum wells
Domoratsky E.V.
Zakharchenko M.V.
Glinsky G. F.
4
224
Pages: 55-61
Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy
Heterostructures, superlattices, quantum wells
Chumanov I.V.
Firsov D.D.
Kolyada D.V.
Komkov O.S.
Skvortsov I.V.
Mashanov V.I.
Timofeev V.A.
4
237
Pages: 62-67
Luminescence in nanostructures with compensated quantum wells under optical and electrical pumping
Heterostructures, superlattices, quantum wells
Adamov R.B.
Melentyev G.A.
Podoskin A.A.
Slipchenko S.O.
Sedova I.V.
Sorokin S.V.
Makhov I.S.
Firsov D.A.
Shalygin V.A.
3
229
Pages: 68-76
Electroluminescence of narrow-gap InAs/InAs1–ySby/InAsSbP heterostructures with y = 0.07–0.12
Heterostructures, superlattices, quantum wells
Ruzhevich M.S.
Mynbaev K.D.
Bazhenov N.L.
Romanov V.V.
Moiseev K.D.
5
232
Pages: 77-82
Polarized reflectance spectroscopy of aluminum nanoantennas on the surface of emitting GeSiSn/Si heterostructures
Heterostructures, superlattices, quantum wells
Khakhulin S.А.
Firsov D.D.
Komkov O.S.
Timofeev V.A.
Skvortsov I.V.
Mashanov V.I.
Utkin D.E.
5
250
Pages: 83-88
Gurzhi effect in point contacts in GaAs
Heterostructures, superlattices, quantum wells
Sarypov D.I.
Pokhabov D.A.
Pogosov A.G.
Egorov D.A.
Zhdanov E.Yu.
Bakarov A.K.
2
245
Pages: 89-94
Excitation of plasmon modes localized at the edge of a graphene rectangle by teraherz wave
Quantum wires, quantum dots, and other low-dimensional systems
Mashinsky K.V.
Popov V.V.
Fateev D.V.
6
238
Pages: 95-99
Single photon emission of “silicon-vacancy” centers in nanodiamonds placed in cylindrical pits on a gold film
Quantum wires, quantum dots, and other low-dimensional systems
Zhivopistsev А.А.
Romshin A.M.
Gritsienko A.V.
Lega P.V.
Bagramov R.Kh.
Filonenko V.P.
Vitukhnovsky A.G.
Vlasov I.I.
9
247
Pages: 100-104
Photoinduced light absorption in Ge/Si quantum dots
Quantum wires, quantum dots, and other low-dimensional systems
Ustimenko R.V.
Karaulov D.A.
Vinnichenko M.Ya.
Makhov I.S.
Firsov D.A.
Sarkisyan H.A.
Sargsian T.A.
Hayrapetyan D.B.
7
244
Pages: 105-112
Photosensitive nanostructures based on gallium phosphide nanowires and carbon dots
Quantum wires, quantum dots, and other low-dimensional systems
Kozko I.A.
Karaseva E.P.
Sosnovitskaia Z.F.
Istomina M.S.
Fedorov V.V.
Shmakov S.V.
Kondratev V.M.
Bolshakov A.D.
23
290
Pages: 113-118
Temperature evolution of GaP nanowires photoelectronic properties
Quantum wires, quantum dots, and other low-dimensional systems
Karaseva E.P.
Kozko I.A.
Rider М.А.
Kovova M.S.
Zakharov V.V.
Fedina S.V.
Kondratev V.M.
Bolshakov A.D.
13
234
Pages: 119-124
Individual GaP nanowire conductivity studied with atomic force microscopy and numerical modeling
Quantum wires, quantum dots, and other low-dimensional systems
Sharov V.A.
Alekseev P.A.
Fedorov V.V.
Mukhin I.S.
4
217
Pages: 125-130
Quality factor enhancement of spherical resonators by radial anisotropy
Quantum wires, quantum dots, and other low-dimensional systems
Eghbali A.
Vyshnevyy A.A.
6
217
Pages: 131-136
Potentially flexible sensor based on the ZnO-PDMS matrix for measuring mechanical load
Optoelectronic and nanoelectronic devices
Nikolaeva A.V.
Kondratev V.M.
Kadinskaya S.A.
Markina D.E.
Lendyashova V.V.
Dvoretckaia L.N.
Monastyrenko A.O.
Kochetkov F.M.
Bolshakov A.D.
8
230
Pages: 137-142
Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range
Optoelectronic and nanoelectronic devices
Kharin N.Yu.
Panevin V.Yu.
Vinnichenko M.Ya.
Norvatov I.A.
Fedorov V.V.
Firsov D.A.
3
214
Pages: 143-148
Photocurrent in MIS structures based on germanosilicate films
Optoelectronic and nanoelectronic devices
Hamoud G.
Kamaev G.N.
Vergnat M.
Volodin V.A.
4
219
Pages: 149-154
High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb
Optoelectronic and nanoelectronic devices
Soldatenkov F.Yu.
Ivanov A.E.
Malevskiy D.A.
Levin S.V.
3
221
Pages: 155-159
Deep-level transient spectroscopy of solar cells based on HJT architecture under influence of electron irradiation
Optoelectronic and nanoelectronic devices
Mikhaylov O.P.
Baranov A.I.
Gudovskikh A.S.
Terukov E.I.
2
210
Pages: 160-164
Thermally stable connecting GaAs/AlGaAs tunnel diodes for laser radiation multi-junction photoconverters
Optoelectronic and nanoelectronic devices
Kalinovskii V.S.
Maleev N.A.
Vasil’ev A.P.
Kontrosh E.V.
Tolkachev I.A.
Prudchenko K.К.
Ustinov V.M.
6
215
Pages: 165-170
Formation and light-emitting properties of ion-synthesized Ga2O3 nanoinclusions in the Al2O3/Si matrix
Novel materials
Matyunina K.S.
Nikolskaya A.A.
Kriukov R.N.
Yunin P.A.
Korolev D.S.
3
211
Pages: 171-177