Year: 2024 Volume: 17 Issue: 1.1
Pages: 179
733 43505

Spin-dependent photon echo for an ensemble of three-level systems

Bulk properties of semiconductors
  • 40
  • 1559
  • Pages: 6-11

Optical properties of GaN epitaxial layers in mid- and far-infrared ranges

Bulk properties of semiconductors
  • 41
  • 1677
  • Pages: 12-19

Features of isovalent doping of gallium arsenide with bismuth ions

Bulk properties of semiconductors
  • 12
  • 1602
  • Pages: 20-24

Destruction of the conducting state by ac electric field in naphthalocyanine complexes

Bulk properties of semiconductors
  • 16
  • 1454
  • Pages: 25-30

Dynamics of electron-nuclear spin system in GaAs:Mn epitaxial layers

Bulk properties of semiconductors
  • 22
  • 1625
  • Pages: 31-36

Investigation of nanosized structures using internal friction effect

Structure growth, surface, and interfaces
  • 15
  • 1597
  • Pages: 37-42

Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers

Structure growth, surface, and interfaces
  • 24
  • 1664
  • Pages: 43-48

Electron irradiation as a method for controlling luminescence of hexagonal boron nitride

Structure growth, surface, and interfaces
  • 28
  • 1588
  • Pages: 49-54

Effects of resonant tunneling in GaAs/AlAs heterostructure

Heterostructures, superlattices, quantum wells
  • 30
  • 1446
  • Pages: 55-61

Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy

Heterostructures, superlattices, quantum wells
  • 25
  • 1472
  • Pages: 62-67

Luminescence in nanostructures with compensated quantum wells under optical and electrical pumping

Heterostructures, superlattices, quantum wells
  • 20
  • 1789
  • Pages: 68-76

Electroluminescence of narrow-gap InAs/InAs1–ySby/InAsSbP heterostructures with y = 0.07–0.12

Heterostructures, superlattices, quantum wells
  • 24
  • 1435
  • Pages: 77-82

Polarized reflectance spectroscopy of aluminum nanoantennas on the surface of emitting GeSiSn/Si heterostructures

Heterostructures, superlattices, quantum wells
  • 24
  • 1599
  • Pages: 83-88

Gurzhi effect in point contacts in GaAs

Heterostructures, superlattices, quantum wells
  • 31
  • 1620
  • Pages: 89-94

Excitation of plasmon modes localized at the edge of a graphene rectangle by teraherz wave

Quantum wires, quantum dots, and other low-dimensional systems
  • 11
  • 1492
  • Pages: 95-99

Single photon emission of “silicon-vacancy” centers in nanodiamonds placed in cylindrical pits on a gold film

Quantum wires, quantum dots, and other low-dimensional systems
  • 39
  • 1596
  • Pages: 100-104

Photoinduced light absorption in Ge/Si quantum dots

Quantum wires, quantum dots, and other low-dimensional systems
  • 34
  • 1813
  • Pages: 105-112

Photosensitive nanostructures based on gallium phosphide nanowires and carbon dots

Quantum wires, quantum dots, and other low-dimensional systems
  • 45
  • 1530
  • Pages: 113-118

Temperature evolution of GaP nanowires photoelectronic properties

Quantum wires, quantum dots, and other low-dimensional systems
  • 29
  • 1517
  • Pages: 119-124

Individual GaP nanowire conductivity studied with atomic force microscopy and numerical modeling

Quantum wires, quantum dots, and other low-dimensional systems
  • 15
  • 1431
  • Pages: 125-130

Quality factor enhancement of spherical resonators by radial anisotropy

Quantum wires, quantum dots, and other low-dimensional systems
  • 12
  • 1474
  • Pages: 131-136

Potentially flexible sensor based on the ZnO-PDMS matrix for measuring mechanical load

Optoelectronic and nanoelectronic devices
  • 27
  • 1462
  • Pages: 137-142

Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range

Optoelectronic and nanoelectronic devices
  • 18
  • 1409
  • Pages: 143-148

Photocurrent in MIS structures based on germanosilicate films

Optoelectronic and nanoelectronic devices
  • 19
  • 1712
  • Pages: 149-154

High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb

Optoelectronic and nanoelectronic devices
  • 8
  • 1406
  • Pages: 155-159

Deep-level transient spectroscopy of solar cells based on HJT architecture under influence of electron irradiation

Optoelectronic and nanoelectronic devices
  • 20
  • 1566
  • Pages: 160-164

Thermally stable connecting GaAs/AlGaAs tunnel diodes for laser radiation multi-junction photoconverters

Optoelectronic and nanoelectronic devices
  • 18
  • 1555
  • Pages: 165-170

Formation and light-emitting properties of ion-synthesized Ga2O3 nanoinclusions in the Al2O3/Si matrix

Novel materials
  • 15
  • 1415
  • Pages: 171-177

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