Articles from section "Optoelectronic and nanoelectronic devices "

Optimizing the front contact grid parameters of рhotovoltaic laser power converters

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 0
  • 0
  • Pages: 111-116

Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 0
  • 0
  • Pages: 105-110

Near-UV detectors based on ultrathin GaN epitaxial layers

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 0
  • 2
  • Pages: 100-104

Thermally stable connecting GaAs/AlGaAs tunnel diodes for laser radiation multi-junction photoconverters

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 19
  • 1785
  • Pages: 165-170

Deep-level transient spectroscopy of solar cells based on HJT architecture under influence of electron irradiation

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 20
  • 1835
  • Pages: 160-164

High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 9
  • 1637
  • Pages: 155-159

Photocurrent in MIS structures based on germanosilicate films

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 20
  • 2017
  • Pages: 149-154

Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 19
  • 1623
  • Pages: 143-148

Potentially flexible sensor based on the ZnO-PDMS matrix for measuring mechanical load

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 30
  • 1718
  • Pages: 137-142

Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 8
  • 2771
  • Pages: 176-181

Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 26
  • 3067
  • Pages: 170-175

1.55 μm optical-fiber transmitter based on vertical cavity surface emitting laser obtained by wafer fusion technology

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 19
  • 2763
  • Pages: 163-169

Multi-state lasing in microdisk lasers with InAs/GaAs quantum dots

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 26
  • 2852
  • Pages: 157-162

Optically controlled memristor based on ZrO2(Y) film with Au nanoparticles

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 27
  • 3109
  • Pages: 151-156

Stretchable carbon-nanotube films as opto-mechanically controllable modulators of terahertz radiation

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 7
  • 2816
  • Pages: 146-150

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