Articles by keywords "nanowires"

Role of the buffer layer on the mechanical strength of nanowire-substrate interface

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2026
  • Volume: 19
  • Issue: 1.1
  • 2
  • 316
  • Pages: 75-80

MBE growth of GaAs nanowires with a silicon rich particle on the top

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 4.1
  • 10
  • 854
  • Pages: 62-66

Two bands in PL spectra of InGaN/GaN superlattice embedded in GaN nanowire

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 4.1
  • 5
  • 854
  • Pages: 44-48

Magnetic properties of iron nanowires in a porous aluminum oxide matrix

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 8
  • 853
  • Pages: 106-109

Numerical modeling of optical transmittance of 2×2 directional couplers based on GaP nanowires

Simulation of physical processes
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 8
  • 835
  • Pages: 76-80

Optical characterization and surface plasmon polariton mode simulation of GaN/InGaN nanowires on Ag/AlOx film for plasmonic nanolasers

Physical materials technology
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 7
  • 932
  • Pages: 278-282

MBE growth of wurtzite AlGaAs nanowires with zinc-blende insertions

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 8
  • 956
  • Pages: 148-151

Growth of GaN nanowires with InN inserts by PA-MBE

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 6
  • 894
  • Pages: 139-142

Modification of silicon nanowires with silver nanoparticles for gas sensor applications

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 4
  • 890
  • Pages: 81-84

Synthesis of Mg2Si-based core-shell nanowires

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 14
  • 942
  • Pages: 36-39

Ordered GaAs NW growth on Si(111) substrates modified by two-step FIB treatment

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 11
  • 1000
  • Pages: 19-22

The length distribution of nanowires with forward and backward surface diffusion

Simulation of physical processes
  • Year: 2025
  • Volume: 18
  • Issue: 4
  • 15
  • 1078
  • Pages: 34-47

Memristor effect in heterostructures based on gallium nitride nanowires on silicon

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 4
  • 23
  • 1077
  • Pages: 9-20

Infrared photodetectors based on InAsP epitaxial nanowires on silicon

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 2
  • 54
  • 4698
  • Pages: 9-21

Silicon nanowire based sensorics of acids and bases

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 20
  • 4327
  • Pages: 145-151

Polarized Raman scattering in strained GaN nanowires

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 10
  • 4080
  • Pages: 83-87

Fluorescence of hybrid structures based on carbon dots and GaP, GaN, Si nanowires

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 14
  • 4165
  • Pages: 77-82

Growth of long core-shell InGaN nanowires by plasma-assisted molecular beam epitaxy with gradually increasing substrate temperature

Physics of molecules, clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 17
  • 2892
  • Pages: 143-147

The method of obtaining Ni and Co nanowires in porous anodic alumina matrices

Physics of molecules, clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 6
  • 2961
  • Pages: 135-138

Effect of diameter on lattice thermal conductivity of α-FeSi2 and ε-FeSi nanowires

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 11
  • 3174
  • Pages: 107-111

Millifluidic polyol synthesis of Ag nanowires and microplotter printing of transparent conductive films

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 26
  • 3160
  • Pages: 78-83

Influence of the wet-chemical treatment on the optical and structural properties of core-shell InGaN nanowires

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 18
  • 3584
  • Pages: 306-309

Numerical modal analysis of GaP optical microcavity

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 29
  • 3608
  • Pages: 115-119

Photoluminescence of self-induced InAs nanowires diluted with nitrogen

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 15
  • 3494
  • Pages: 34-37

Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si(111)

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 20
  • 3399
  • Pages: 28-33

Individual GaP nanowire conductivity studied with atomic force microscopy and numerical modeling

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 21
  • 3846
  • Pages: 125-130

Temperature evolution of GaP nanowires photoelectronic properties

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 35
  • 3920
  • Pages: 119-124

Photosensitive nanostructures based on gallium phosphide nanowires and carbon dots

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 61
  • 4098
  • Pages: 113-118

Destruction of the conducting state by ac electric field in naphthalocyanine complexes

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 22
  • 4011
  • Pages: 25-30

Quantum dot-induced photoluminescence enhancement of InGaN nanowires

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 13
  • 4744
  • Pages: 255-260

Photoluminescence anisotropy in hybrid nanostructures based on gallium phosphide nanowire and 2D transition metal dichalcogenides

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 15
  • 4808
  • Pages: 130-136

Towards versatile photonics based on GaP nanowires decorated with carbon dots

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 25
  • 4837
  • Pages: 187-192

Towards nanowire-based selective vapor sensing with an aid of impedance spectroscopy

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 12
  • 4678
  • Pages: 151-156

Hybrid Perovskite/GaP nanowires solar cells with enhanced photovoltaic performance

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 13
  • 4846
  • Pages: 90-93

Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 17
  • 4909
  • Pages: 79-83

Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 11
  • 5190
  • Pages: 176-181

Study of composite structure based on Ag and SiNWs

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 23
  • 5072
  • Pages: 128-134

Interband photoluminescence of InAs(P)/Si nanowires

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 35
  • 5226
  • Pages: 101-107

Modeling of interfacial profile of axial GaAs/ AlAs nanowire heterostructures

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 16
  • 4801
  • Pages: 96-100

Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 68
  • 5876
  • Pages: 179-184

Optical properties of single InGaN nanowires with core-shell structure

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 49
  • 5548
  • Pages: 114-120

Flexible solar cells based on PEDOT:PSS and vertically aligned silicon structures

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 50
  • 5759
  • Pages: 10-17

Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 26
  • 5250
  • Pages: 153-157

Study of mechanical resonance frequencies in tapered nanowires

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 14
  • 5453
  • Pages: 109-112

Study of quasi 1D silicon nanostructures adsorption properties via impedance spectroscopy

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 31
  • 5449
  • Pages: 43-48

Dielectric spectroscopy of Ag2S nanowires synthesized in porous silicate glasses

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 20
  • 5412
  • Pages: 33-37

Low-adhesive silicone rubbers for flexible light-emitting devices

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 8
  • 5806
  • Pages: 320-325

Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 38
  • 6064
  • Pages: 281-284

Electrical conductivity and optical properties of water-based graphene/AgNWs hybrid inks for flexible electronics

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 24
  • 5739
  • Pages: 101-104

Effect of FIB-modification of Si(111) surface on GaAs nanowire growth

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 16
  • 5904
  • Pages: 36-41

Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 26
  • 6185
  • Pages: 31-35

Impact of the current pulse width on the speed of metal-insulator transition in VO2 nanobeams

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 18
  • 5709
  • Pages: 130-134

Study of quasi 1-D silicon nanostructures adsorption properties

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 57
  • 6105
  • Pages: 10-15

Effect of thermal annealing on the composition of Ge-Co nanostructure obtained by electrochemical deposition

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 9
  • 5855
  • Pages: 232-236

Facile fabrication of a TiO2 NW-based glucose sensor by direct ink writing

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 29
  • 6392
  • Pages: 125-130

FORC-investigation of magnetic properties of Ni nanowire arrays synthesized using Al2O3 templates with different order of pores

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 32
  • 6323
  • Pages: 113-118

Investigation of temperature stability of germanium nanowires obtained by electrochemical deposition

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 29
  • 5961
  • Pages: 59-64