Articles by keywords "heterostructure"
Optical reflectance spectroscopy for barrier thickness measurement of AlGaN/GaN heterostructures: comparison with X-ray reflectometry
- Year: 2025
- Volume: 18
- Issue: 3.1
- 2
- 43
- Pages: 143-147
Optical studies of InAs/InAsSb/InAsSbP heterostructures
- Year: 2025
- Volume: 18
- Issue: 3.1
- 0
- 43
- Pages: 91-94
The influence of hole states on the electronic and electrostatic properties of 2D layers based on the silicon-germaniumsilicon heterostructure
- Year: 2025
- Volume: 18
- Issue: 2
- 28
- 3337
- Pages: 22-29
Dependence of static and dynamic characteristics of high-voltage pulsed p–i–n diodes on the composition of heteroepitaxial AlxGa1−xAs1−ySby base layers
- Year: 2025
- Volume: 18
- Issue: 1.1
- 6
- 3420
- Pages: 140-144
Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs
- Year: 2025
- Volume: 18
- Issue: 1.1
- 20
- 3352
- Pages: 105-110
Threshold current of separate spectral components of the emission spectrum of InGaN LEDs
- Year: 2024
- Volume: 17
- Issue: 3.2
- 11
- 2309
- Pages: 161-165
Heterostructure design features for 975 nm high-power laser diodes
- Year: 2024
- Volume: 17
- Issue: 3.1
- 6
- 2352
- Pages: 129-133
Effect of argon ion bombardment on the composition, electronic structure and physical properties of cadmium fluoride
- Year: 2024
- Volume: 17
- Issue: 3
- 17
- 3071
- Pages: 87-96
The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique
- Year: 2024
- Volume: 17
- Issue: 2
- 44
- 3836
- Pages: 120-133
A microwave method for measuring the low-frequency noise of transistors
- Year: 2024
- Volume: 17
- Issue: 2
- 21
- 3709
- Pages: 61-70
High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb
- Year: 2024
- Volume: 17
- Issue: 1.1
- 14
- 3023
- Pages: 155-159
Electroluminescence of narrow-gap InAs/InAs1–ySby/InAsSbP heterostructures with y = 0.07–0.12
- Year: 2024
- Volume: 17
- Issue: 1.1
- 27
- 3067
- Pages: 77-82
Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy
- Year: 2024
- Volume: 17
- Issue: 1.1
- 46
- 3087
- Pages: 62-67
Effects of resonant tunneling in GaAs/AlAs heterostructure
- Year: 2024
- Volume: 17
- Issue: 1.1
- 55
- 3279
- Pages: 55-61
Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers
- Year: 2024
- Volume: 17
- Issue: 1.1
- 27
- 3686
- Pages: 43-48
Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates
- Year: 2024
- Volume: 17
- Issue: 1
- 25
- 4400
- Pages: 38-46
Structural surface characteristics of aluminum-gallium nitride films on silicon carbide nanolayers on silicon
- Year: 2023
- Volume: 16
- Issue: 3.2
- 12
- 4107
- Pages: 223-227
Simulation and analysis of heterostructures for normally-off p-channel GaN transistor
- Year: 2023
- Volume: 16
- Issue: 3.1
- 29
- 3942
- Pages: 449-453
Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel
- Year: 2023
- Volume: 16
- Issue: 3.1
- 10
- 3871
- Pages: 133-137
Temperature dependence of the energy spectrum of metamorphic InSb/In(Ga,Al)As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy
- Year: 2023
- Volume: 16
- Issue: 3.1
- 31
- 4068
- Pages: 47-52
Emission, optical and electrical properties of GaInP/GaP nanofilms
- Year: 2023
- Volume: 16
- Issue: 2
- 29
- 5339
- Pages: 89-97
Polarimetry of waveguiding heterostructures with quantum well-dots
- Year: 2023
- Volume: 16
- Issue: 1.3
- 12
- 4155
- Pages: 140-145
Modeling of interfacial profile of axial GaAs/ AlAs nanowire heterostructures
- Year: 2023
- Volume: 16
- Issue: 1.3
- 15
- 4043
- Pages: 96-100
Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band
- Year: 2023
- Volume: 16
- Issue: 1.3
- 23
- 4484
- Pages: 33-38
Photoluminescence and energy transfer between CdTe/CdMnTe quantum wells separated by thick barriers
- Year: 2023
- Volume: 16
- Issue: 1.1
- 38
- 4845
- Pages: 49-53
Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method
- Year: 2023
- Volume: 16
- Issue: 1.1
- 32
- 4809
- Pages: 22-27
Measurement of the internal quantum efficiency of emission in the local region of the LED chip
- Year: 2022
- Volume: 15
- Issue: 3.3
- 18
- 5072
- Pages: 226-229
Optimization of heterostructure transistor parameters for the monolithic integrated circuits of the amplifying path of a medical radiothermograph
- Year: 2022
- Volume: 15
- Issue: 3.2
- 9
- 4793
- Pages: 326-330
Giant lateral photovoltaic effect in the TiO2/SiO2/p-Si heterostructure
- Year: 2022
- Volume: 15
- Issue: 3.1
- 31
- 6080
- Pages: 32-37
Exitons condensation in quasi-2D SiGe layers - Si/Si1-xGex/Si heterostructures
- Year: 2010
- Issue: 3
- 0
- 9121
- Pages: 7-13
AlGaN/GaN heterojunction quality monitoring with large-area heterostructure field-effect transistor
- Year: 2009
- Issue: 1
- 0
- 8497
- Pages: 43-48
The topical trends in semiconductor and nanostructure physics, semiconductor opto- and nanoelectronics (on the 18th All-Russion Youth Conference)
- Year: 2017
- Volume: 10
- Issue: 2
- 69
- 8817
- Pages: 123-132
Resultes of 17-th Аll-Russian youth conference on semiconductor and nanoctructure physics and semiconductor opto- and nanoelectronics
- Year: 2016
- Issue: 1
- 243
- 8757
- Pages: 98-108
The influence of temperature and electric field on emission of carriers out of the InAs/CaAs quantum dots
- Year: 2009
- Issue: 2
- 0
- 8442
- Pages: 11-14
Electron-hole liquid yellow-green photoluminescence in SiGe tunnel-transparent layers of silicon heterostructures
- Year: 2013
- Issue: 3
- 378
- 9066
- Pages: 60-68
Transistor pHEMT structures: Studies on semiconductor heterostructure peculiarities using atomic force microscopy methods
- Year: 2010
- Issue: 1
- 1
- 8736
- Pages: 18-28
The technique of investigation of surface states in a sharp nonsymmetrical CdS / p-Si heterostructures
- Year: 2012
- Issue: 2
- 1
- 8716
- Pages: 27-32
The growth of gallium nitride layers with low dislocation density
- Year: 2012
- Issue: 4
- 0
- 8627
- Pages: 28-31