Articles by keywords "heterostructure"
Dependence of static and dynamic characteristics of high-voltage pulsed p–i–n diodes on the composition of heteroepitaxial AlxGa1−xAs1−ySby base layers
- Year: 2025
- Volume: 18
- Issue: 1.1
- 6
- 337
- Pages: 140-144
Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs
- Year: 2025
- Volume: 18
- Issue: 1.1
- 6
- 344
- Pages: 105-110
Threshold current of separate spectral components of the emission spectrum of InGaN LEDs
- Year: 2024
- Volume: 17
- Issue: 3.2
- 5
- 770
- Pages: 161-165
Heterostructure design features for 975 nm high-power laser diodes
- Year: 2024
- Volume: 17
- Issue: 3.1
- 5
- 1001
- Pages: 129-133
Effect of argon ion bombardment on the composition, electronic structure and physical properties of cadmium fluoride
- Year: 2024
- Volume: 17
- Issue: 3
- 14
- 1348
- Pages: 87-96
The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique
- Year: 2024
- Volume: 17
- Issue: 2
- 39
- 2199
- Pages: 120-133
A microwave method for measuring the low-frequency noise of transistors
- Year: 2024
- Volume: 17
- Issue: 2
- 18
- 2048
- Pages: 61-70
High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb
- Year: 2024
- Volume: 17
- Issue: 1.1
- 11
- 1807
- Pages: 155-159
Electroluminescence of narrow-gap InAs/InAs1–ySby/InAsSbP heterostructures with y = 0.07–0.12
- Year: 2024
- Volume: 17
- Issue: 1.1
- 27
- 1840
- Pages: 77-82
Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy
- Year: 2024
- Volume: 17
- Issue: 1.1
- 34
- 1842
- Pages: 62-67
Effects of resonant tunneling in GaAs/AlAs heterostructure
- Year: 2024
- Volume: 17
- Issue: 1.1
- 36
- 1869
- Pages: 55-61
Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers
- Year: 2024
- Volume: 17
- Issue: 1.1
- 24
- 2141
- Pages: 43-48
Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates
- Year: 2024
- Volume: 17
- Issue: 1
- 22
- 2627
- Pages: 38-46
Structural surface characteristics of aluminum-gallium nitride films on silicon carbide nanolayers on silicon
- Year: 2023
- Volume: 16
- Issue: 3.2
- 11
- 2480
- Pages: 223-227
Simulation and analysis of heterostructures for normally-off p-channel GaN transistor
- Year: 2023
- Volume: 16
- Issue: 3.1
- 29
- 2484
- Pages: 449-453
Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel
- Year: 2023
- Volume: 16
- Issue: 3.1
- 7
- 2395
- Pages: 133-137
Temperature dependence of the energy spectrum of metamorphic InSb/In(Ga,Al)As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy
- Year: 2023
- Volume: 16
- Issue: 3.1
- 26
- 2482
- Pages: 47-52
Emission, optical and electrical properties of GaInP/GaP nanofilms
- Year: 2023
- Volume: 16
- Issue: 2
- 26
- 3556
- Pages: 89-97
Polarimetry of waveguiding heterostructures with quantum well-dots
- Year: 2023
- Volume: 16
- Issue: 1.3
- 10
- 2851
- Pages: 140-145
Modeling of interfacial profile of axial GaAs/ AlAs nanowire heterostructures
- Year: 2023
- Volume: 16
- Issue: 1.3
- 14
- 2819
- Pages: 96-100
Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band
- Year: 2023
- Volume: 16
- Issue: 1.3
- 21
- 3103
- Pages: 33-38
Photoluminescence and energy transfer between CdTe/CdMnTe quantum wells separated by thick barriers
- Year: 2023
- Volume: 16
- Issue: 1.1
- 33
- 3193
- Pages: 49-53
Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method
- Year: 2023
- Volume: 16
- Issue: 1.1
- 31
- 3261
- Pages: 22-27
Measurement of the internal quantum efficiency of emission in the local region of the LED chip
- Year: 2022
- Volume: 15
- Issue: 3.3
- 14
- 3568
- Pages: 226-229
Optimization of heterostructure transistor parameters for the monolithic integrated circuits of the amplifying path of a medical radiothermograph
- Year: 2022
- Volume: 15
- Issue: 3.2
- 8
- 3448
- Pages: 326-330
Giant lateral photovoltaic effect in the TiO2/SiO2/p-Si heterostructure
- Year: 2022
- Volume: 15
- Issue: 3.1
- 23
- 4301
- Pages: 32-37
Exitons condensation in quasi-2D SiGe layers - Si/Si1-xGex/Si heterostructures
- Year: 2010
- Issue: 3
- 0
- 7607
- Pages: 7-13
AlGaN/GaN heterojunction quality monitoring with large-area heterostructure field-effect transistor
- Year: 2009
- Issue: 1
- 0
- 7178
- Pages: 43-48
The topical trends in semiconductor and nanostructure physics, semiconductor opto- and nanoelectronics (on the 18th All-Russion Youth Conference)
- Year: 2017
- Volume: 10
- Issue: 2
- 69
- 7567
- Pages: 123-132
Resultes of 17-th Аll-Russian youth conference on semiconductor and nanoctructure physics and semiconductor opto- and nanoelectronics
- Year: 2016
- Issue: 1
- 242
- 7580
- Pages: 98-108
The influence of temperature and electric field on emission of carriers out of the InAs/CaAs quantum dots
- Year: 2009
- Issue: 2
- 0
- 7083
- Pages: 11-14
Electron-hole liquid yellow-green photoluminescence in SiGe tunnel-transparent layers of silicon heterostructures
- Year: 2013
- Issue: 3
- 378
- 7620
- Pages: 60-68
Transistor pHEMT structures: Studies on semiconductor heterostructure peculiarities using atomic force microscopy methods
- Year: 2010
- Issue: 1
- 1
- 7368
- Pages: 18-28
The technique of investigation of surface states in a sharp nonsymmetrical CdS / p-Si heterostructures
- Year: 2012
- Issue: 2
- 1
- 7266
- Pages: 27-32
The growth of gallium nitride layers with low dislocation density
- Year: 2012
- Issue: 4
- 0
- 7201
- Pages: 28-31