Articles by keywords "heterostructure"

Threshold current of separate spectral components of the emission spectrum of InGaN LEDs

Experimental technique and devices
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 3
  • 438
  • Pages: 161-165

Heterostructure design features for 975 nm high-power laser diodes

Atom physics and physics of clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 5
  • 666
  • Pages: 129-133

Effect of argon ion bombardment on the composition, electronic structure and physical properties of cadmium fluoride

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 13
  • 940
  • Pages: 87-96

The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 2
  • 36
  • 1844
  • Pages: 120-133

A microwave method for measuring the low-frequency noise of transistors

Experimental technique and devices
  • Year: 2024
  • Volume: 17
  • Issue: 2
  • 16
  • 1631
  • Pages: 61-70

High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 8
  • 1470
  • Pages: 155-159

Electroluminescence of narrow-gap InAs/InAs1–ySby/InAsSbP heterostructures with y = 0.07–0.12

Heterostructures, superlattices, quantum wells
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 25
  • 1513
  • Pages: 77-82

Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy

Heterostructures, superlattices, quantum wells
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 28
  • 1539
  • Pages: 62-67

Effects of resonant tunneling in GaAs/AlAs heterostructure

Heterostructures, superlattices, quantum wells
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 31
  • 1517
  • Pages: 55-61

Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers

Structure growth, surface, and interfaces
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 24
  • 1735
  • Pages: 43-48

Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 1
  • 21
  • 2253
  • Pages: 38-46

Structural surface characteristics of aluminum-gallium nitride films on silicon carbide nanolayers on silicon

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 11
  • 2098
  • Pages: 223-227

Simulation and analysis of heterostructures for normally-off p-channel GaN transistor

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 25
  • 2133
  • Pages: 449-453

Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 7
  • 2062
  • Pages: 133-137

Temperature dependence of the energy spectrum of metamorphic InSb/In(Ga,Al)As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 26
  • 2152
  • Pages: 47-52

Emission, optical and electrical properties of GaInP/GaP nanofilms

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 2
  • 25
  • 3163
  • Pages: 89-97

Polarimetry of waveguiding heterostructures with quantum well-dots

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 9
  • 2548
  • Pages: 140-145

Modeling of interfacial profile of axial GaAs/ AlAs nanowire heterostructures

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 13
  • 2545
  • Pages: 96-100

Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 19
  • 2741
  • Pages: 33-38

Photoluminescence and energy transfer between CdTe/CdMnTe quantum wells separated by thick barriers

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 29
  • 2827
  • Pages: 49-53

Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 27
  • 2882
  • Pages: 22-27

Measurement of the internal quantum efficiency of emission in the local region of the LED chip

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 13
  • 3240
  • Pages: 226-229

Optimization of heterostructure transistor parameters for the monolithic integrated circuits of the amplifying path of a medical radiothermograph

Physics of molecules
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 8
  • 3107
  • Pages: 326-330

Giant lateral photovoltaic effect in the TiO2/SiO2/p-Si heterostructure

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 21
  • 3934
  • Pages: 32-37

Exitons condensation in quasi-2D SiGe layers - Si/Si1-xGex/Si heterostructures

Condensed matter physics
  • Year: 2010
  • Issue: 3
  • 0
  • 7283
  • Pages: 7-13

AlGaN/GaN heterojunction quality monitoring with large-area heterostructure field-effect transistor

Condensed matter physics
  • Year: 2009
  • Issue: 1
  • 0
  • 6893
  • Pages: 43-48

The topical trends in semiconductor and nanostructure physics, semiconductor  opto- and nanoelectronics (on the 18th All-Russion Youth Conference)

Conferences
  • Year: 2017
  • Volume: 10
  • Issue: 2
  • 69
  • 7251
  • Pages: 123-132

Resultes of 17-th Аll-Russian youth conference on semiconductor and nanoctructure physics and semiconductor opto- and nanoelectronics

Conferences
  • Year: 2016
  • Issue: 1
  • 242
  • 7269
  • Pages: 98-108

The influence of temperature and electric field on emission of carriers out of the InAs/CaAs quantum dots

Condensed matter physics
  • Year: 2009
  • Issue: 2
  • 0
  • 6785
  • Pages: 11-14

Electron-hole liquid yellow-green photoluminescence in SiGe tunnel-transparent layers of silicon heterostructures

Condensed matter physics
  • Year: 2013
  • Issue: 3
  • 378
  • 7299
  • Pages: 60-68

Transistor pHEMT structures: Studies on semiconductor heterostructure peculiarities using atomic force microscopy methods

Condensed matter physics
  • Year: 2010
  • Issue: 1
  • 1
  • 7074
  • Pages: 18-28

The technique of investigation of surface states in a sharp nonsymmetrical CdS / p-Si heterostructures

Condensed matter physics
  • Year: 2012
  • Issue: 2
  • 1
  • 6983
  • Pages: 27-32

The growth of gallium nitride layers with low dislocation density

Condensed matter physics
  • Year: 2012
  • Issue: 4
  • 0
  • 6904
  • Pages: 28-31

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