Articles by keywords "heterostructure"

Heterostructure design features for 975 nm high-power laser diodes

Atom physics and physics of clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 2
  • 233
  • Pages: 129-133

Effect of argon ion bombardment on the composition, electronic structure and physical properties of cadmium fluoride

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 9
  • 408
  • Pages: 87-96

The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 2
  • 31
  • 1271
  • Pages: 120-133

A microwave method for measuring the low-frequency noise of transistors

Experimental technique and devices
  • Year: 2024
  • Volume: 17
  • Issue: 2
  • 14
  • 1175
  • Pages: 61-70

High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 8
  • 1028
  • Pages: 155-159

Electroluminescence of narrow-gap InAs/InAs1–ySby/InAsSbP heterostructures with y = 0.07–0.12

Heterostructures, superlattices, quantum wells
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 19
  • 1048
  • Pages: 77-82

Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy

Heterostructures, superlattices, quantum wells
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 21
  • 1091
  • Pages: 62-67

Effects of resonant tunneling in GaAs/AlAs heterostructure

Heterostructures, superlattices, quantum wells
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 26
  • 1053
  • Pages: 55-61

Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers

Structure growth, surface, and interfaces
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 21
  • 1226
  • Pages: 43-48

Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 1
  • 19
  • 1613
  • Pages: 38-46

Structural surface characteristics of aluminum-gallium nitride films on silicon carbide nanolayers on silicon

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 9
  • 1570
  • Pages: 223-227

Simulation and analysis of heterostructures for normally-off p-channel GaN transistor

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 20
  • 1647
  • Pages: 449-453

Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 6
  • 1639
  • Pages: 133-137

Temperature dependence of the energy spectrum of metamorphic InSb/In(Ga,Al)As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 25
  • 1713
  • Pages: 47-52

Emission, optical and electrical properties of GaInP/GaP nanofilms

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 2
  • 21
  • 2614
  • Pages: 89-97

Polarimetry of waveguiding heterostructures with quantum well-dots

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 9
  • 2097
  • Pages: 140-145

Modeling of interfacial profile of axial GaAs/ AlAs nanowire heterostructures

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 11
  • 2145
  • Pages: 96-100

Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 18
  • 2285
  • Pages: 33-38

Photoluminescence and energy transfer between CdTe/CdMnTe quantum wells separated by thick barriers

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 27
  • 2375
  • Pages: 49-53

Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 26
  • 2370
  • Pages: 22-27

Measurement of the internal quantum efficiency of emission in the local region of the LED chip

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 11
  • 2767
  • Pages: 226-229

Optimization of heterostructure transistor parameters for the monolithic integrated circuits of the amplifying path of a medical radiothermograph

Physics of molecules
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 8
  • 2692
  • Pages: 326-330

Giant lateral photovoltaic effect in the TiO2/SiO2/p-Si heterostructure

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 20
  • 3355
  • Pages: 32-37

Exitons condensation in quasi-2D SiGe layers - Si/Si1-xGex/Si heterostructures

Condensed matter physics
  • Year: 2010
  • Issue: 3
  • 0
  • 6873
  • Pages: 7-13

AlGaN/GaN heterojunction quality monitoring with large-area heterostructure field-effect transistor

Condensed matter physics
  • Year: 2009
  • Issue: 1
  • 0
  • 6524
  • Pages: 43-48

The topical trends in semiconductor and nanostructure physics, semiconductor  opto- and nanoelectronics (on the 18th All-Russion Youth Conference)

Conferences
  • Year: 2017
  • Volume: 10
  • Issue: 2
  • 68
  • 6800
  • Pages: 123-132

Resultes of 17-th Аll-Russian youth conference on semiconductor and nanoctructure physics and semiconductor opto- and nanoelectronics

Conferences
  • Year: 2016
  • Issue: 1
  • 242
  • 6868
  • Pages: 98-108

The influence of temperature and electric field on emission of carriers out of the InAs/CaAs quantum dots

Condensed matter physics
  • Year: 2009
  • Issue: 2
  • 0
  • 6394
  • Pages: 11-14

Electron-hole liquid yellow-green photoluminescence in SiGe tunnel-transparent layers of silicon heterostructures

Condensed matter physics
  • Year: 2013
  • Issue: 3
  • 378
  • 6848
  • Pages: 60-68

Transistor pHEMT structures: Studies on semiconductor heterostructure peculiarities using atomic force microscopy methods

Condensed matter physics
  • Year: 2010
  • Issue: 1
  • 1
  • 6636
  • Pages: 18-28

The technique of investigation of surface states in a sharp nonsymmetrical CdS / p-Si heterostructures

Condensed matter physics
  • Year: 2012
  • Issue: 2
  • 1
  • 6589
  • Pages: 27-32

The growth of gallium nitride layers with low dislocation density

Condensed matter physics
  • Year: 2012
  • Issue: 4
  • 0
  • 6506
  • Pages: 28-31