Baranov Artem I.
  • Affiliation
    Alferov University
  • St. Petersburg, Russian Federation

Study of recombination and transport properties of a-Si:H(i)/ μc-Si:H(n) contact system for crystalline silicon solar cells

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 14
  • 2740
  • Pages: 150-154

Plasma deposited indium phosphide and its electrophysical properties

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 25
  • 3027
  • Pages: 123-127

Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 29
  • 2647
  • Pages: 281-284

Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 44
  • 2477
  • Pages: 179-184

Study of photoconvertion heterojunction n-GaP/p-Si obtained by PE-ALD

Heterostructures, superlattices, quantum wells
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 7
  • 2012
  • Pages: 90-95

Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 7
  • 2064
  • Pages: 176-181

Flexible solar cells based on PEDOT:PSS and vertically aligned silicon structures

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 38
  • 2220
  • Pages: 10-17

Heterojunction solar cells based on nanostructured black silicon

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 10
  • 1640
  • Pages: 434-438

Capacitance-voltage characterization of BP layers grown by PECVD mode

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 13
  • 1592
  • Pages: 473-478

Boron phosphide grown by PECVD and its optical properties

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 24
  • 1679
  • Pages: 273-277

Deep-level transient spectroscopy of solar cells based on HJT architecture under influence of electron irradiation

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 12
  • 1047
  • Pages: 160-164

Admittance spectroscopy of boron phosphide heterostructures grown by plasma enhanced chemical vapor deposition on silicon substrates

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 6
  • 334
  • Pages: 17-24

Gallium phosphide/black silicon heterojunction solar cells

Physical electronics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 1
  • 105
  • Pages: 199-203

GaN based ultraviolet narrowband photodetectors

Physical optics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 1
  • 100
  • Pages: 220-223