SPbPU Journal - Physics and Mathematics
St. Petersburg Polytechnic University Journal: Physics and Mathematics Peter the Great St. Petersburg Polytechnic University
Since 2008
ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
en Английский
Version for the visually impaired
Author Baranov Artem I.
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Latest issues
Baranov Artem I.
  • Affiliation
    Alferov University
  • St. Petersburg, Russian Federation

Study of recombination and transport properties of a-Si:H(i)/ μc-Si:H(n) contact system for crystalline silicon solar cells

Physical electronics
Uvarov A.V. Baranov A.I. Maksimova A.A. Vyacheslavova E.A. Gudovskikh A.S.
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 14
  • 2629
  • Pages: 150-154

Plasma deposited indium phosphide and its electrophysical properties

Physical electronics
Maksimova A.A. Uvarov A.V. Kirilenko D.A. Baranov A.I. Vyacheslavova E.A. Gudovskikh A.S.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 25
  • 2881
  • Pages: 123-127

Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

Physical materials technology
Bondarenko D.N. Gridchin V.O. Kotlyar K.P. Baranov A.I. Maksimova A.A. Reznik R.R. Cirlin G.E.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 29
  • 2542
  • Pages: 281-284

Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

Physical materials technology
Bondarenko D.N. Gridchin V.O. Kotlyar K.P. Reznik R.R. Kirilenko D.A. Baranov A.I. Dragunova A.S. Kryzhanovskaya N.V. Maksimova A.A. Cirlin G.E.
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 44
  • 2339
  • Pages: 179-184

Study of photoconvertion heterojunction n-GaP/p-Si obtained by PE-ALD

Heterostructures, superlattices, quantum wells
Kiianitsyn S.Yu. Baranov A.I. Uvarov A.V. Maksimova A.A. Vyacheslavova E.A. Gudovskikh A.S.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 6
  • 1887
  • Pages: 90-95

Formation of radial amorphous hydrogenated silicon p-i-n solar cells on silicon nanowire arrays toward flexible photovoltaics

Optoelectronic and nanoelectronic devices
Vyacheslavova E.A. Uvarov A.V. Maksimova A.A. Baranov A.I. Gudovskikh A.S.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 7
  • 1938
  • Pages: 176-181

Flexible solar cells based on PEDOT:PSS and vertically aligned silicon structures

Physical electronics
Vyacheslavova E.A. Uvarov A.V. Neplokh V.V. Maksimova A.A. Baranov A.I. Gudovskikh A.S.
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 36
  • 2095
  • Pages: 10-17

Heterojunction solar cells based on nanostructured black silicon

Physical electronics
Vyacheslavova E.A. Uvarov A.V. Maksimova A.A. Baranov A.I. Gudovskikh A.S.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 9
  • 1518
  • Pages: 434-438

Capacitance-voltage characterization of BP layers grown by PECVD mode

Physical electronics
Vtorygin G.E. Baranov A.I. Uvarov A.V. Maksimova A.A. Vyacheslavova E.A.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 13
  • 1478
  • Pages: 473-478

Boron phosphide grown by PECVD and its optical properties

Physical materials technology
Maksimova A.A. Uvarov A.V. Pozdeev V.A. Kirilenko D.A. Baranov A.I. Vyacheslavova E.A. Gudovskikh A.S.
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 19
  • 1512
  • Pages: 273-277

Deep-level transient spectroscopy of solar cells based on HJT architecture under influence of electron irradiation

Optoelectronic and nanoelectronic devices
Mikhaylov O.P. Baranov A.I. Gudovskikh A.S. Terukov E.I.
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 7
  • 896
  • Pages: 160-164

Admittance spectroscopy of boron phosphide heterostructures grown by plasma enhanced chemical vapor deposition on silicon substrates

Condensed matter physics
Baranov A.I. Vtorygin G.E. Uvarov A.V. Maksimova A.A. Vyacheslavova E.A. Gudovskikh A.S.
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 2
  • 132
  • Pages: 17-24