Kryzhanovskaya Natalia V.

Investigation of far-field patterns of semiconductor microlasers with an active region based on InGaAs/GaAs quantum well-dots

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 46
  • 2470
  • Pages: 25-30

Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 22
  • 2013
  • Pages: 31-35

Analysis of characteristics of InGaAs/GaAs microdisk lasers bonded onto silicon board

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 23
  • 1922
  • Pages: 163-166

The investigation of optical coupling of microlasers with tapered fiber

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 19
  • 2180
  • Pages: 167-170

Optical studies of InP nanostructures monolithically integrated in Si (100)

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 16
  • 1887
  • Pages: 260-264

Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 21
  • 1914
  • Pages: 311-314

Integrated optical transceiver based on III-V microdisk laser and photodiode

Experimental technique and devices
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 20
  • 1924
  • Pages: 371-375

Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 22
  • 1539
  • Pages: 22-27

Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 16
  • 1452
  • Pages: 153-157

Thermal characteristics of III-V microlasers bonded onto silicon board

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 17
  • 1448
  • Pages: 108-113

Optical properties of single InGaN nanowires with core-shell structure

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 29
  • 1525
  • Pages: 114-120

Microring lasers with a waveguide coupler

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 39
  • 1610
  • Pages: 126-132

Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 39
  • 1634
  • Pages: 179-184

Multi-state lasing in microdisk lasers with InAs/GaAs quantum dots

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 22
  • 1423
  • Pages: 157-162

Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 9
  • 831
  • Pages: 64-68

Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 6
  • 818
  • Pages: 50-55

Quantum dot-induced photoluminescence enhancement of InGaN nanowires

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 3
  • 783
  • Pages: 255-260