Natalia V. Kryzhanovskaya Natalia V.
Natalia V. Kryzhanovskaya Natalia V.

Investigation of far-field patterns of semiconductor microlasers with an active region based on InGaAs/GaAs quantum well-dots

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 60
  • 6351
  • Pages: 25-30

Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 26
  • 5319
  • Pages: 31-35

Analysis of characteristics of InGaAs/GaAs microdisk lasers bonded onto silicon board

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 31
  • 4925
  • Pages: 163-166

The investigation of optical coupling of microlasers with tapered fiber

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 26
  • 5532
  • Pages: 167-170

Optical studies of InP nanostructures monolithically integrated in Si (100)

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 21
  • 5127
  • Pages: 260-264

Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 31
  • 5185
  • Pages: 311-314

Integrated optical transceiver based on III-V microdisk laser and photodiode

Experimental technique and devices
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 27
  • 4945
  • Pages: 371-375

Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 32
  • 4819
  • Pages: 22-27

Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 24
  • 4440
  • Pages: 153-157

Thermal characteristics of III-V microlasers bonded onto silicon board

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 33
  • 4533
  • Pages: 108-113

Optical properties of single InGaN nanowires with core-shell structure

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 48
  • 4748
  • Pages: 114-120

Microring lasers with a waveguide coupler

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 57
  • 4755
  • Pages: 126-132

Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 66
  • 5008
  • Pages: 179-184

Multi-state lasing in microdisk lasers with InAs/GaAs quantum dots

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 26
  • 4303
  • Pages: 157-162

Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 18
  • 3853
  • Pages: 64-68

Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 20
  • 4289
  • Pages: 50-55

Quantum dot-induced photoluminescence enhancement of InGaN nanowires

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 13
  • 3932
  • Pages: 255-260

Quantum dots formation by InGaAs decomposition onto a patterned GaAs surface

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 12
  • 2574
  • Pages: 38-42

Study of the photoluminescence properties of subcritical InAs/GaAs quantum dots formed onto structured substrates

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 18
  • 2588
  • Pages: 79-83

Study of planar microcavity structure with In0.63Ga0.37As quantum dots and non-absorbing Al0.2Ga0.8As/Al0.9Ga0.1As mirrors

Physical optics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 20
  • 2715
  • Pages: 233-237

Growth of long core-shell InGaN nanowires by plasma-assisted molecular beam epitaxy with gradually increasing substrate temperature

Physics of molecules, clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 16
  • 2071
  • Pages: 143-147

Mode leakage into substrate in microdisk lasers

Physical optics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 18
  • 2293
  • Pages: 212-216

Ordered GaAs NW growth on Si (111) substrates modified by two-step FIB treatment

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 0
  • 88
  • Pages: 19-22

Investigation of microdisks lasers with an InGaN/GaN quantum well in the active region at elevated temperatures

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 0
  • 69
  • Pages: 125-128

Optical properties of disk microresonators based on wide-bandgap III-N materials

Physical optics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 1
  • 61
  • Pages: 209-213

Optical studies of InGaAs/GaAs quantum well mesa structures passivated with sol-gel SiO2

Physical optics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 0
  • 45
  • Pages: 237-241

Optical characterization and surface plasmon polariton mode simulation of GaN/InGaN nanowires on Ag/AlOx film for plasmonic nanolasers

Physical materials technology
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 2
  • 60
  • Pages: 278-282

Photoluminescence of InGaAs/InAlAs short-period superlattices grown on InP substrate

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 0
  • 74
  • Pages: 95-98

Microdisk lasers with a bridge contact pad formed by wet chemical etching

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 0
  • 26
  • Pages: 24-28

Injection edge-emitting microlasers with InGaAs/GaAs quantum dot active region

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 0
  • 30
  • Pages: 29-32

Spectral composition of radiation from microlaser coupled to waveguide

Physical optics
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 0
  • 6
  • Pages: 200-204