Kryzhanovskaya Natalia V.
Latest issues
- 2024, Volume 17 Issue 3.1 Full text
- 2024, Volume 17 Issue 3
- 2024, Volume 17 Issue 2
- 2024, Volume 17 Issue 1.1
Investigation of far-field patterns of semiconductor microlasers with an active region based on InGaAs/GaAs quantum well-dots
- Year: 2022
- Volume: 15
- Issue: 3.2
- 49
- 3407
- Pages: 25-30
Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures
- Year: 2022
- Volume: 15
- Issue: 3.3
- 23
- 2808
- Pages: 31-35
Analysis of characteristics of InGaAs/GaAs microdisk lasers bonded onto silicon board
- Year: 2022
- Volume: 15
- Issue: 3.3
- 27
- 2670
- Pages: 163-166
The investigation of optical coupling of microlasers with tapered fiber
- Year: 2022
- Volume: 15
- Issue: 3.3
- 20
- 3017
- Pages: 167-170
Optical studies of InP nanostructures monolithically integrated in Si (100)
- Year: 2022
- Volume: 15
- Issue: 3.3
- 17
- 2582
- Pages: 260-264
Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates
- Year: 2022
- Volume: 15
- Issue: 3.3
- 26
- 2639
- Pages: 311-314
Integrated optical transceiver based on III-V microdisk laser and photodiode
- Year: 2022
- Volume: 15
- Issue: 3.3
- 23
- 2639
- Pages: 371-375
Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method
- Year: 2023
- Volume: 16
- Issue: 1.1
- 26
- 2309
- Pages: 22-27
Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface
- Year: 2023
- Volume: 16
- Issue: 1.1
- 16
- 2147
- Pages: 153-157
Thermal characteristics of III-V microlasers bonded onto silicon board
- Year: 2023
- Volume: 16
- Issue: 1.2
- 22
- 2233
- Pages: 108-113
Optical properties of single InGaN nanowires with core-shell structure
- Year: 2023
- Volume: 16
- Issue: 1.2
- 32
- 2285
- Pages: 114-120
Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate
- Year: 2023
- Volume: 16
- Issue: 1.2
- 44
- 2477
- Pages: 179-184
Multi-state lasing in microdisk lasers with InAs/GaAs quantum dots
- Year: 2023
- Volume: 16
- Issue: 1.3
- 24
- 2195
- Pages: 157-162
Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates
- Year: 2023
- Volume: 16
- Issue: 3.1
- 15
- 1558
- Pages: 64-68
Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening
- Year: 2023
- Volume: 16
- Issue: 3.2
- 10
- 1644
- Pages: 50-55
Quantum dot-induced photoluminescence enhancement of InGaN nanowires
- Year: 2023
- Volume: 16
- Issue: 3.2
- 5
- 1517
- Pages: 255-260
Quantum dots formation by InGaAs decomposition onto a patterned GaAs surface
- Year: 2024
- Volume: 17
- Issue: 3.1
- 0
- 135
- Pages: 38-42
Study of the photoluminescence properties of subcritical InAs/GaAs quantum dots formed onto structured substrates
- Year: 2024
- Volume: 17
- Issue: 3.1
- 2
- 139
- Pages: 79-83
Study of planar microcavity structure with In0.63Ga0.37As quantum dots and non-absorbing Al0.2Ga0.8As/Al0.9Ga0.1As mirrors
- Year: 2024
- Volume: 17
- Issue: 3.1
- 0
- 96
- Pages: 233-237