SPbPU Journal - Physics and Mathematics
    St. Petersburg Polytechnic University Journal: Physics and MathematicsPeter the Great St. Petersburg Polytechnic University
    Since 2008
    ISSN 2304-9782
    ISSN 2618-8686
    ISSN 2405-7223
    enАнглийский
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    Articles by keywords "diode"

    Measurement of the timing jitter of a low-noise single photon detector

    Experimental technique and devices
    Anisimov A.A.Belov A.A.Kozlov A.S.Kotov O.I.Krinskiy P.A.Medvedev A.V.Petrov A.V.Rozov S.V.Ushakov N.A.
    • Year: 2026
    • Volume: 19
    • Issue: 1
    • 6
    • 408
    • Pages: 121-132

    Photoelectric properties of diodes based on magnesium silicide semiconductor

    Condensed matter physics
    Fomin D.V.Sholygin I.O.Polyakov A.V.Galkin N.G.Galkin K.N.Chernev I.M.
    • Year: 2026
    • Volume: 19
    • Issue: 1
    • 8
    • 413
    • Pages: 19-29

    Low-loss reflective X-band phase shifter with wide phase control range

    Radiophysics
    Lvov A.V.Shurakov A.S.Goltsman G.N.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 3
    • 705
    • Pages: 315-318

    Photonic-electronic IC of a subterahertz GaAs-on-Si in-phase/quadrature mixer

    Physical electronics
    Belikov I.I.Rozhkova P.V.Prikhodko A.N.Goltsman G.N.Shurakov A.S.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 3
    • 664
    • Pages: 187-190

    InAsSb solid solution optocouple for carbon dioxide analysis

    Physical electronics
    Kunkov R.E.Karandashev S.A.Klimov A.A.Lukhmyrina T.S.Remennyi M.A.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 4
    • 649
    • Pages: 178-182

    HOT surface illuminated phoodiodes based on n-InAsSbP/InAs/p-InAsSbP heterostructures

    Atom physics and physics of clusters and nanostructures
    Klimov A.A.Kunkov R.E.Lukhmyrina T.S.Matveev B.A.
    • Year: 2025
    • Volume: 18
    • Issue: 3.2
    • 4
    • 697
    • Pages: 110-114

    Dependence of static and dynamic characteristics of high-voltage pulsed p–i–n diodes on the composition of heteroepitaxial AlxGa1−xAs1−ySby base layers

    Optoelectronic and nanoelectronic devices
    Soldatenkov F.Yu.Pugovkin A.A.Ivanov A.E.Malevskiy D.A.Levin S.V.
    • Year: 2025
    • Volume: 18
    • Issue: 1.1
    • 7
    • 4013
    • Pages: 140-144

    A new method of managing the discretization of the scale in a mobile differential refractometer

    Experimental technique and devices
    Provodin D.S.Yakusheva M.A.Davydov V.V.
    • Year: 2024
    • Volume: 17
    • Issue: 3.2
    • 7
    • 2825
    • Pages: 166-172

    Heterostructure design features for 975 nm high-power laser diodes

    Atom physics and physics of clusters and nanostructures
    Ershov E.V.Fomin A.V. Lupachev M.V.Rogachkov O.A.Naidin A.A.
    • Year: 2024
    • Volume: 17
    • Issue: 3.1
    • 6
    • 2950
    • Pages: 129-133

    Numerical simulation of the tunnel effect in the gallium nitride heterostructure on silicon

    Simulation of physical processes
    Barykin D.A.Shugurov K.Yu.Mozharov A.M.Mukhin I.S.
    • Year: 2024
    • Volume: 17
    • Issue: 3
    • 27
    • 3727
    • Pages: 46-56

    Thermally stable connecting GaAs/AlGaAs tunnel diodes for laser radiation multi-junction photoconverters

    Optoelectronic and nanoelectronic devices
    Kalinovskii V.S.Maleev N.A.Vasil’ev A.P.Kontrosh E.V.Tolkachev I.A.Prudchenko K.К.Ustinov V.M.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 26
    • 4006
    • Pages: 165-170

    High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb

    Optoelectronic and nanoelectronic devices
    Soldatenkov F.Yu.Ivanov A.E.Malevskiy D.A.Levin S.V.
    • Year: 2024
    • Volume: 17
    • Issue: 1.1
    • 14
    • 3605
    • Pages: 155-159

    The electron and proton irradiation effects on the properties of high-voltage 4H-SiC Schottky diodes within the operating temperature range

    Condensed matter physics
    Kozlovski V.V.Lebedev A.A.Kuzmin R. A.Malevskiy D.A.Levinshtein M. E.Oganesjan G.A.
    • Year: 2024
    • Volume: 17
    • Issue: 1
    • 65
    • 4940
    • Pages: 9-20

    Temperature characterization of GaAs/AlGaAs connecting tunnel diodes

    Condensed matter physics
    Kontrosh E.V.Kalinovskii V.S.Klimko G.V.Ber B.Ya.Prudchenko K.К.Tolkachev I.A.Kazantsev D.Yu.
    • Year: 2023
    • Volume: 16
    • Issue: 4
    • 37
    • 5159
    • Pages: 30-41

    Compact solid-state laser with diode optical pumping and high frequency stability

    Physical optics
    Naumova V.V. Orlov O.A.
    • Year: 2023
    • Volume: 16
    • Issue: 3.2
    • 10
    • 4559
    • Pages: 120-124

    Design and simulation of an optical system of high-power fiber-coupled laser module

    Physical optics
    Kadigrob E.V.Fomin A.V. Usmanov S.R.
    • Year: 2023
    • Volume: 16
    • Issue: 3.2
    • 32
    • 4505
    • Pages: 75-80

    Laser diode module over 350 W power output with 200 µm/NA 0.22 fiber

    Physical optics
    Ignatev A.N.Fomin A.V. Usmanov S.R.Kadigrob E.V.
    • Year: 2023
    • Volume: 16
    • Issue: 3.2
    • 18
    • 4542
    • Pages: 23-27

    Investigation of the avalanche delay effect in sine-gated single-photon detector

    Physical electronics
    Losev A.V.Filyaev A.A.Zavodilenko V.V.Pavlov I.D.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 23
    • 4487
    • Pages: 459-462

    Effect of sulfide-polyamide passivation on dark currents of the InAlAs/InGaAs/InP avalanche photodiodes

    Experimental technique and devices
    Andryushkin V.V.Maleev N.A.Kuzmenkov A.G.Kulagina M.M.Guseva Yu.A.Vasil’ev A.P.Blokhin S.A.Bobrov M.A.Troshkov S.I.Papylev D.S.Kolodeznyi E.S.Ustinov V.M.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 29
    • 4607
    • Pages: 352-356

    Investigation on the effects of the multiplication area shape on the dark count rate in InGaAs/InAlAs single-photon avalanche photodiodes

    Simulation of physical processes
    Zavodilenko V.V.Filyaev A.A.Losev A.V.Pavlov I.D.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 18
    • 4746
    • Pages: 242-247

    Modeling the characteristics of avalanche photodiodes based on Ge/Si

    Simulation of physical processes
    Khomyakova K.I.Deeb H.Lozovoy K.A.Kokhanenko A.P.
    • Year: 2023
    • Volume: 16
    • Issue: 3.1
    • 31
    • 4956
    • Pages: 232-236

    Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)

    Optoelectronic and nanoelectronic devices
    Ivanov A.E.Talnishnikh Nadezhda A.Chernyakov A.E.Zakgeim A.L.
    • Year: 2023
    • Volume: 16
    • Issue: 1.3
    • 29
    • 5058
    • Pages: 170-175

    Stability of steady states of plasma diodes with counter-streaming electron and positron flows

    Astrophysics
    Kuznetsov V.I.Bakaleinikov L.A.Flegontova E.Yu.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 7
    • 4318
    • Pages: 442-448

    Stimulated emission from asymmetric InAs/InAsSb/InAsSbP LED heterostructures

    Physical materials technology
    Semakova A.A.Romanov V.V.Bazhenov N.L.Mynbaev K.D.Moiseev K.D.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 12
    • 5064
    • Pages: 191-195

    Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

    Physical materials technology
    Bondarenko D.N.Gridchin V.O.Kotlyar K.P.Reznik R.R.Kirilenko D.A.Baranov A.I.Dragunova A.S.Kryzhanovskaya N.V.Maksimova A.A.Cirlin G.E.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 68
    • 5641
    • Pages: 179-184

    Power-communicating photo-receiving device

    Physical optics
    Kognovitskii S.O.Malevskiy D.A.Terukov E.I.Yakovlev S.A.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 17
    • 5165
    • Pages: 160-164

    Current-voltage characteristics of Cr/SiC(4H) Schottky diodes

    Physical electronics
    Strel'chuk A.M.Kalinina E.V.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 20
    • 5051
    • Pages: 83-89

    Stability features of inhomogeneous steady-state potential distributions in diode with counter-streaming electron and ion flows

    Physical electronics
    Bakaleinikov L.A.Kuznetsov V.I.Flegontova E.Yu.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 10
    • 5339
    • Pages: 32-38

    Effect of an external circuit on the stability of thermionic energy converter steady states

    Physical electronics
    Gerasimenko A.B.Kuznetsov V.I.
    • Year: 2023
    • Volume: 16
    • Issue: 1.2
    • 13
    • 5152
    • Pages: 25-31

    Temperature distribution in InAsSbP/InAsSb/InAs double heterostructure on-chip sensors

    Condensed matter physics
    Lukhmyrina T.S.Klimov A.A.Kunkov R.E.Lebedeva N.M.Matveev B.A.Chernyakov A.E.
    • Year: 2023
    • Volume: 16
    • Issue: 1.1
    • 24
    • 5111
    • Pages: 119-125

    Low-adhesive silicone rubbers for flexible light-emitting devices

    Physical materials technology
    Miroshnichenko A.S.Deriabin K.V.Mukhin I.S.Islamova R.M.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 8
    • 5569
    • Pages: 320-325

    Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

    Physical materials technology
    Bondarenko D.N.Gridchin V.O.Kotlyar K.P.Baranov A.I.Maksimova A.A.Reznik R.R.Cirlin G.E.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 38
    • 5853
    • Pages: 281-284

    The effect of mesa-stripe design parameters on the 975 nm laser diode output characteristics

    Physical optics
    Fomin A.V. Filonenko E.M.Kryukov S.A.Nazhmetov S.Kh.
    • Year: 2022
    • Volume: 15
    • Issue: 3.3
    • 16
    • 5531
    • Pages: 235-238

    Wavelength stabilized laser module for highpower fiber laser pumping

    Physical optics
    Ignatev A.N.Fomin A.V. Usmanov S.R.
    • Year: 2022
    • Volume: 15
    • Issue: 3.2
    • 19
    • 5629
    • Pages: 190-195

    Reliability of 808 nm QCW laser diode arrays

    Physical optics
    Gafurov E.M. Smirnov E.V.
    • Year: 2022
    • Volume: 15
    • Issue: 3.2
    • 14
    • 5432
    • Pages: 167-171

    Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction

    Physical electronics
    Kazakin A.N.Enns Ya.B.Uvarov A.V.Nikitina E.V.
    • Year: 2022
    • Volume: 15
    • Issue: 3.2
    • 30
    • 5681
    • Pages: 145-149

    Сurrent-voltage characteristics and photoelectric properties of por-Si/Si-p/Si-n diodes with different porous layer thickness

    Physical electronics
    Yan D.T.Galkin N.G.Galkin K.N.Chernev I.M.
    • Year: 2022
    • Volume: 15
    • Issue: 3.1
    • 18
    • 6084
    • Pages: 143-148

    A triangulation sensor for measuring the displacements and high-precision monitoring of the production performance

    Experimental technique and devices
    Stepanov V.A.Moos E.N.Shadrin M.V.Savin Vladislav N.Umnyashkin A.V. Umnyashkin N.V.
    • Year: 2020
    • Volume: 13
    • Issue: 1
    • 46
    • 9900
    • Pages: 54-65

    The relation of volume and surface effects with a charge barrier height in a dynamic p–i–n-photodyode

    Condensed matter physics
    Dyubo D. B.Tsybin O.Yu.
    • Year: 2018
    • Volume: 11
    • Issue: 2
    • 17
    • 9855
    • Pages: 16-25

    Influence of aluminum content in blocking layer  on properties of green InGaAlN LEDs

    Condensed matter physics
    Kornyshov G.O.Sakharov A.V.Nikolaev A.E.
    • Year: 2013
    • Issue: 4
    • 358
    • 9409
    • Pages: 31-36

    Semiconductor laser diodes power supply

    Experimental technique and devices
    Krasnov A.V.Parfenov V.A.
    • Year: 2010
    • Issue: 2
    • 0
    • 9110
    • Pages: 131-134

    Reactor pressure effect on optical properties of MOVPE-grown InGaN heterostructures

    Condensed matter physics
    Chernysheva E.A.Sakharov A.V.Cherkashin N.A.Lundin Vsevolod V.Tsatsulnikov A.F.
    • Year: 2012
    • Issue: 2
    • 0
    • 9144
    • Pages: 32-36

    An estimation of plasma radiation losses in the Globus-M tokamak using silicon SPD photodiodes

    Experimental technique and devices
    Iblyaminova A.D.Kurskiev G.S.Berezutsky A.A.Petrov Yu.V.Zabrodsky V.V.Tolstyakov S.Yu.
    • Year: 2012
    • Issue: 4
    • 0
    • 9293
    • Pages: 70-74

    Spectral selectivity of holographic gain gratings in the multiloop cavity laser

    Physical optics
    Pogoda A.P.Ermolaev A.A.Lebedev V.F.Smetanin S.N.Boreisho A.S.
    • Year: 2013
    • Issue: 2
    • 1113
    • 10722
    • Pages: 121-129

    Single-frequency mode regime of laser diodes

    Experimental technique and devices
    Dvortsov D.V.Parfenov V.A.
    • Year: 2013
    • Issue: 2
    • 1357
    • 11016
    • Pages: 89-96