Modeling the characteristics of avalanche photodiodes based on Ge/Si

Simulation of physical processes
Authors:
Khomyakova Kristina I. Deeb Hazem Lozovoy Kirill A. Kokhanenko Andrey P.
Abstract:

In this article, the planar structure of an avalanche photodiode based on Ge/Si is designed. The dependences of the gain and bandwidth on the bias voltage for different thicknesses of the absorption and multiplication layers of an avalanche photodiode based on Ge/Si are presented.