SPbPU Journal - Physics and Mathematics
St. Petersburg Polytechnic University Journal: Physics and Mathematics Peter the Great St. Petersburg Polytechnic University
Since 2008
ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
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Articles by keywords "diode"

Thermally stable connecting GaAs/AlGaAs tunnel diodes for laser radiation multi-junction photoconverters

Optoelectronic and nanoelectronic devices
Kalinovskii V.S. Maleev N.A. Vasil’ev A.P. Kontrosh E.V. Tolkachev I.A. Prudchenko K.К. Ustinov V.M.
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 7
  • 336
  • Pages: 165-170

High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb

Optoelectronic and nanoelectronic devices
Soldatenkov F.Yu. Ivanov A.E. Malevskiy D.A. Levin S.V.
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 3
  • 329
  • Pages: 155-159

The electron and proton irradiation effects on the properties of high-voltage 4H-SiC Schottky diodes within the operating temperature range

Condensed matter physics
Kozlovski V.V. Lebedev A.A. Kuzmin R. A. Malevskiy D.A. Levinshtein M. E. Oganesjan G.A.
  • Year: 2024
  • Volume: 17
  • Issue: 1
  • 25
  • 673
  • Pages: 9-20

Temperature characterization of GaAs/AlGaAs connecting tunnel diodes

Condensed matter physics
Kontrosh E.V. Kalinovskii V.S. Klimko G.V. Ber B.Ya. Prudchenko K.К. Tolkachev I.A. Kazantsev D.Yu.
  • Year: 2023
  • Volume: 16
  • Issue: 4
  • 20
  • 1119
  • Pages: 30-41

Compact solid-state laser with diode optical pumping and high frequency stability

Physical optics
Naumova V.V. Orlov O.A.
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 5
  • 841
  • Pages: 120-124

Design and simulation of an optical system of high-power fiber-coupled laser module

Physical optics
Kadigrob E.V. Fomin A.V. Usmanov S.R.
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 5
  • 834
  • Pages: 75-80

Laser diode module over 350 W power output with 200 µm/NA 0.22 fiber

Physical optics
Ignatev A.N. Fomin A.V. Usmanov S.R. Kadigrob E.V.
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 10
  • 943
  • Pages: 23-27

Investigation of the avalanche delay effect in sine-gated single-photon detector

Physical electronics
Losev A.V. Filyaev A.A. Zavodilenko V.V. Pavlov I.D.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 5
  • 904
  • Pages: 459-462

Effect of sulfide-polyamide passivation on dark currents of the InAlAs/InGaAs/InP avalanche photodiodes

Experimental technique and devices
Andryushkin V.V. Maleev N.A. Kuzmenkov A.G. Kulagina M.M. Guseva Yu.A. Vasil’ev A.P. Blokhin S.A. Bobrov M.A. Troshkov S.I. Papylev D.S. Kolodeznyi E.S. Ustinov V.M.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 7
  • 881
  • Pages: 352-356

Investigation on the effects of the multiplication area shape on the dark count rate in InGaAs/InAlAs single-photon avalanche photodiodes

Simulation of physical processes
Zavodilenko V.V. Filyaev A.A. Losev A.V. Pavlov I.D.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 7
  • 865
  • Pages: 242-247

Modeling the characteristics of avalanche photodiodes based on Ge/Si

Simulation of physical processes
Khomyakova K.I. Deeb H. Lozovoy K.A. Kokhanenko A.P.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 8
  • 1129
  • Pages: 232-236

Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)

Optoelectronic and nanoelectronic devices
Ivanov A.E. Talnishnikh Nadezhda A. Chernyakov A.E. Zakgeim A.L.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 23
  • 1786
  • Pages: 170-175

Stability of steady states of plasma diodes with counter-streaming electron and positron flows

Astrophysics
Kuznetsov V.I. Bakaleinikov L.A. Flegontova E.Yu.
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 1
  • 1307
  • Pages: 442-448

Stimulated emission from asymmetric InAs/InAsSb/InAsSbP LED heterostructures

Physical materials technology
Semakova A.A. Romanov V.V. Bazhenov N.L. Mynbaev K.D. Moiseev K.D.
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 5
  • 1562
  • Pages: 191-195

Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

Physical materials technology
Bondarenko D.N. Gridchin V.O. Kotlyar K.P. Reznik R.R. Kirilenko D.A. Baranov A.I. Dragunova A.S. Kryzhanovskaya N.V. Maksimova A.A. Cirlin G.E.
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 41
  • 1739
  • Pages: 179-184

Power-communicating photo-receiving device

Physical optics
Kognovitskii S.O. Malevskiy D.A. Terukov E.I. Yakovlev S.A.
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 11
  • 1500
  • Pages: 160-164

Current-voltage characteristics of Cr/SiC(4H) Schottky diodes

Physical electronics
Strel'chuk A.M. Kalinina E.V.
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 13
  • 1507
  • Pages: 83-89

Stability features of inhomogeneous steady-state potential distributions in diode with counter-streaming electron and ion flows

Physical electronics
Bakaleinikov L.A. Kuznetsov V.I. Flegontova E.Yu.
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 4
  • 1620
  • Pages: 32-38

Effect of an external circuit on the stability of thermionic energy converter steady states

Physical electronics
Gerasimenko A.B. Kuznetsov V.I.
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 8
  • 1608
  • Pages: 25-31

Temperature distribution in InAsSbP/InAsSb/InAs double heterostructure on-chip sensors

Condensed matter physics
Lukhmyrina T.S. Klimov A.A. Kunkov R.E. Lebedeva N.M. Matveev B.A. Chernyakov A.E.
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 13
  • 1562
  • Pages: 119-125

Low-adhesive silicone rubbers for flexible light-emitting devices

Physical materials technology
Miroshnichenko A.S. Deriabin K.V. Mukhin I.S. Islamova R.M.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 6
  • 1916
  • Pages: 320-325

Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

Physical materials technology
Bondarenko D.N. Gridchin V.O. Kotlyar K.P. Baranov A.I. Maksimova A.A. Reznik R.R. Cirlin G.E.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 25
  • 2030
  • Pages: 281-284

The effect of mesa-stripe design parameters on the 975 nm laser diode output characteristics

Physical optics
Fomin A.V. Filonenko E.M. Kryukov S.A. Nazhmetov S.Kh.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 10
  • 2043
  • Pages: 235-238

Wavelength stabilized laser module for highpower fiber laser pumping

Physical optics
Ignatev A.N. Fomin A.V. Usmanov S.R.
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 9
  • 2028
  • Pages: 190-195

Reliability of 808 nm QCW laser diode arrays

Physical optics
Gafurov E.M. Smirnov E.V.
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 8
  • 1958
  • Pages: 167-171

Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction

Physical electronics
Kazakin A.N. Enns Ya.B. Uvarov A.V. Nikitina E.V.
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 18
  • 2014
  • Pages: 145-149

Сurrent-voltage characteristics and photoelectric properties of por-Si/Si-p/Si-n diodes with different porous layer thickness

Physical electronics
Yan D.T. Galkin N.G. Galkin K.N. Chernev I.M.
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 14
  • 2414
  • Pages: 143-148

A triangulation sensor for measuring the displacements and high-precision monitoring of the production performance

Experimental technique and devices
Stepanov V.A. Moos E.N. Shadrin M.V. Savin Vladislav N. Umnyashkin A.V. Umnyashkin N.V.
  • Year: 2020
  • Volume: 13
  • Issue: 1
  • 35
  • 5766
  • Pages: 54-65

The relation of volume and surface effects with a charge barrier height in a dynamic p–i–n-photodyode

Condensed matter physics
Dyubo D. B. Tsybin O.Yu.
  • Year: 2018
  • Volume: 11
  • Issue: 2
  • 15
  • 6267
  • Pages: 16-25

Influence of aluminum content in blocking layer  on properties of green InGaAlN LEDs

Condensed matter physics
Kornyshov G.O. Sakharov A.V. Nikolaev A.E.
  • Year: 2013
  • Issue: 4
  • 356
  • 6225
  • Pages: 31-36

Semiconductor laser diodes power supply

Experimental technique and devices
Krasnov A.V. Parfenov V.A.
  • Year: 2010
  • Issue: 2
  • 0
  • 5829
  • Pages: 131-134

Reactor pressure effect on optical properties of MOVPE-grown InGaN heterostructures

Condensed matter physics
Chernysheva E.A. Sakharov A.V. Cherkashin N.A. Lundin Vsevolod V. Tsatsulnikov A.F.
  • Year: 2012
  • Issue: 2
  • 0
  • 5875
  • Pages: 32-36

An estimation of plasma radiation losses in the Globus-M tokamak using silicon SPD photodiodes

Experimental technique and devices
Iblyaminova A.D. Kurskiev G.S. Berezutsky A.A. Petrov Yu.V. Zabrodsky V.V. Tolstyakov S.Yu.
  • Year: 2012
  • Issue: 4
  • 0
  • 5804
  • Pages: 70-74

Spectral selectivity of holographic gain gratings in the multiloop cavity laser

Physical optics
Pogoda A.P. Ermolaev A.A. Lebedev V.F. Smetanin S.N. Boreisho A.S.
  • Year: 2013
  • Issue: 2
  • 1108
  • 7511
  • Pages: 121-129

Single-frequency mode regime of laser diodes

Experimental technique and devices
Dvortsov D.V. Parfenov V.A.
  • Year: 2013
  • Issue: 2
  • 1355
  • 7754
  • Pages: 89-96