Articles by keywords "diode"
Dependence of static and dynamic characteristics of high-voltage pulsed p–i–n diodes on the composition of heteroepitaxial AlxGa1−xAs1−ySby base layers
- Year: 2025
- Volume: 18
- Issue: 1.1
- 6
- 3097
- Pages: 140-144
A new method of managing the discretization of the scale in a mobile differential refractometer
- Year: 2024
- Volume: 17
- Issue: 3.2
- 6
- 1900
- Pages: 166-172
Heterostructure design features for 975 nm high-power laser diodes
- Year: 2024
- Volume: 17
- Issue: 3.1
- 6
- 2046
- Pages: 129-133
Numerical simulation of the tunnel effect in the gallium nitride heterostructure on silicon
- Year: 2024
- Volume: 17
- Issue: 3
- 27
- 2731
- Pages: 46-56
Thermally stable connecting GaAs/AlGaAs tunnel diodes for laser radiation multi-junction photoconverters
- Year: 2024
- Volume: 17
- Issue: 1.1
- 23
- 3033
- Pages: 165-170
High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb
- Year: 2024
- Volume: 17
- Issue: 1.1
- 14
- 2738
- Pages: 155-159
The electron and proton irradiation effects on the properties of high-voltage 4H-SiC Schottky diodes within the operating temperature range
- Year: 2024
- Volume: 17
- Issue: 1
- 53
- 3804
- Pages: 9-20
Temperature characterization of GaAs/AlGaAs connecting tunnel diodes
- Year: 2023
- Volume: 16
- Issue: 4
- 36
- 4112
- Pages: 30-41
Compact solid-state laser with diode optical pumping and high frequency stability
- Year: 2023
- Volume: 16
- Issue: 3.2
- 9
- 3616
- Pages: 120-124
Design and simulation of an optical system of high-power fiber-coupled laser module
- Year: 2023
- Volume: 16
- Issue: 3.2
- 27
- 3577
- Pages: 75-80
Laser diode module over 350 W power output with 200 µm/NA 0.22 fiber
- Year: 2023
- Volume: 16
- Issue: 3.2
- 16
- 3663
- Pages: 23-27
Investigation of the avalanche delay effect in sine-gated single-photon detector
- Year: 2023
- Volume: 16
- Issue: 3.1
- 16
- 3577
- Pages: 459-462
Effect of sulfide-polyamide passivation on dark currents of the InAlAs/InGaAs/InP avalanche photodiodes
- Year: 2023
- Volume: 16
- Issue: 3.1
- 26
- 3604
- Pages: 352-356
Investigation on the effects of the multiplication area shape on the dark count rate in InGaAs/InAlAs single-photon avalanche photodiodes
- Year: 2023
- Volume: 16
- Issue: 3.1
- 16
- 3787
- Pages: 242-247
Modeling the characteristics of avalanche photodiodes based on Ge/Si
- Year: 2023
- Volume: 16
- Issue: 3.1
- 29
- 4066
- Pages: 232-236
Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)
- Year: 2023
- Volume: 16
- Issue: 1.3
- 27
- 4168
- Pages: 170-175
Stability of steady states of plasma diodes with counter-streaming electron and positron flows
- Year: 2023
- Volume: 16
- Issue: 1.2
- 5
- 3509
- Pages: 442-448
Stimulated emission from asymmetric InAs/InAsSb/InAsSbP LED heterostructures
- Year: 2023
- Volume: 16
- Issue: 1.2
- 9
- 4227
- Pages: 191-195
Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate
- Year: 2023
- Volume: 16
- Issue: 1.2
- 61
- 4664
- Pages: 179-184
Current-voltage characteristics of Cr/SiC(4H) Schottky diodes
- Year: 2023
- Volume: 16
- Issue: 1.2
- 20
- 4186
- Pages: 83-89
Stability features of inhomogeneous steady-state potential distributions in diode with counter-streaming electron and ion flows
- Year: 2023
- Volume: 16
- Issue: 1.2
- 10
- 4362
- Pages: 32-38
Effect of an external circuit on the stability of thermionic energy converter steady states
- Year: 2023
- Volume: 16
- Issue: 1.2
- 13
- 4290
- Pages: 25-31
Temperature distribution in InAsSbP/InAsSb/InAs double heterostructure on-chip sensors
- Year: 2023
- Volume: 16
- Issue: 1.1
- 21
- 4241
- Pages: 119-125
Low-adhesive silicone rubbers for flexible light-emitting devices
- Year: 2022
- Volume: 15
- Issue: 3.3
- 8
- 4670
- Pages: 320-325
Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate
- Year: 2022
- Volume: 15
- Issue: 3.3
- 38
- 4916
- Pages: 281-284
The effect of mesa-stripe design parameters on the 975 nm laser diode output characteristics
- Year: 2022
- Volume: 15
- Issue: 3.3
- 15
- 4686
- Pages: 235-238
Wavelength stabilized laser module for highpower fiber laser pumping
- Year: 2022
- Volume: 15
- Issue: 3.2
- 19
- 4686
- Pages: 190-195
Reliability of 808 nm QCW laser diode arrays
- Year: 2022
- Volume: 15
- Issue: 3.2
- 12
- 4515
- Pages: 167-171
Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction
- Year: 2022
- Volume: 15
- Issue: 3.2
- 28
- 4833
- Pages: 145-149
Сurrent-voltage characteristics and photoelectric properties of por-Si/Si-p/Si-n diodes with different porous layer thickness
- Year: 2022
- Volume: 15
- Issue: 3.1
- 17
- 5173
- Pages: 143-148
A triangulation sensor for measuring the displacements and high-precision monitoring of the production performance
- Year: 2020
- Volume: 13
- Issue: 1
- 40
- 8798
- Pages: 54-65
The relation of volume and surface effects with a charge barrier height in a dynamic p–i–n-photodyode
- Year: 2018
- Volume: 11
- Issue: 2
- 16
- 9000
- Pages: 16-25
Influence of aluminum content in blocking layer on properties of green InGaAlN LEDs
- Year: 2013
- Issue: 4
- 357
- 8676
- Pages: 31-36
Reactor pressure effect on optical properties of MOVPE-grown InGaN heterostructures
- Year: 2012
- Issue: 2
- 0
- 8353
- Pages: 32-36
An estimation of plasma radiation losses in the Globus-M tokamak using silicon SPD photodiodes
- Year: 2012
- Issue: 4
- 0
- 8460
- Pages: 70-74
Spectral selectivity of holographic gain gratings in the multiloop cavity laser
- Year: 2013
- Issue: 2
- 1113
- 9969
- Pages: 121-129