Articles by keywords "diode"

Numerical simulation of the tunnel effect in the gallium nitride heterostructure on silicon

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 0
  • 60
  • Pages: 46-56

Thermally stable connecting GaAs/AlGaAs tunnel diodes for laser radiation multi-junction photoconverters

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 13
  • 948
  • Pages: 165-170

High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 6
  • 817
  • Pages: 155-159

The electron and proton irradiation effects on the properties of high-voltage 4H-SiC Schottky diodes within the operating temperature range

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 1
  • 33
  • 1207
  • Pages: 9-20

Temperature characterization of GaAs/AlGaAs connecting tunnel diodes

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 4
  • 24
  • 1664
  • Pages: 30-41

Compact solid-state laser with diode optical pumping and high frequency stability

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 6
  • 1321
  • Pages: 120-124

Design and simulation of an optical system of high-power fiber-coupled laser module

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 6
  • 1331
  • Pages: 75-80

Laser diode module over 350 W power output with 200 µm/NA 0.22 fiber

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 13
  • 1460
  • Pages: 23-27

Investigation of the avalanche delay effect in sine-gated single-photon detector

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 5
  • 1393
  • Pages: 459-462

Effect of sulfide-polyamide passivation on dark currents of the InAlAs/InGaAs/InP avalanche photodiodes

Experimental technique and devices
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 18
  • 1378
  • Pages: 352-356

Investigation on the effects of the multiplication area shape on the dark count rate in InGaAs/InAlAs single-photon avalanche photodiodes

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 8
  • 1366
  • Pages: 242-247

Modeling the characteristics of avalanche photodiodes based on Ge/Si

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 12
  • 1723
  • Pages: 232-236

Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 25
  • 2288
  • Pages: 170-175

Stability of steady states of plasma diodes with counter-streaming electron and positron flows

Astrophysics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 2
  • 1742
  • Pages: 442-448

Stimulated emission from asymmetric InAs/InAsSb/InAsSbP LED heterostructures

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 6
  • 2055
  • Pages: 191-195

Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 43
  • 2310
  • Pages: 179-184

Power-communicating photo-receiving device

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 12
  • 2038
  • Pages: 160-164

Current-voltage characteristics of Cr/SiC(4H) Schottky diodes

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 14
  • 1996
  • Pages: 83-89

Stability features of inhomogeneous steady-state potential distributions in diode with counter-streaming electron and ion flows

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 5
  • 2150
  • Pages: 32-38

Effect of an external circuit on the stability of thermionic energy converter steady states

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 9
  • 2143
  • Pages: 25-31

Temperature distribution in InAsSbP/InAsSb/InAs double heterostructure on-chip sensors

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 19
  • 2072
  • Pages: 119-125

Low-adhesive silicone rubbers for flexible light-emitting devices

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 6
  • 2418
  • Pages: 320-325

Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 29
  • 2517
  • Pages: 281-284

The effect of mesa-stripe design parameters on the 975 nm laser diode output characteristics

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 11
  • 2525
  • Pages: 235-238

Wavelength stabilized laser module for highpower fiber laser pumping

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 13
  • 2495
  • Pages: 190-195

Reliability of 808 nm QCW laser diode arrays

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 10
  • 2422
  • Pages: 167-171

Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 18
  • 2550
  • Pages: 145-149

Сurrent-voltage characteristics and photoelectric properties of por-Si/Si-p/Si-n diodes with different porous layer thickness

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 14
  • 2945
  • Pages: 143-148

A triangulation sensor for measuring the displacements and high-precision monitoring of the production performance

Experimental technique and devices
  • Year: 2020
  • Volume: 13
  • Issue: 1
  • 36
  • 6369
  • Pages: 54-65

The relation of volume and surface effects with a charge barrier height in a dynamic p–i–n-photodyode

Condensed matter physics
  • Year: 2018
  • Volume: 11
  • Issue: 2
  • 15
  • 6765
  • Pages: 16-25

Influence of aluminum content in blocking layer  on properties of green InGaAlN LEDs

Condensed matter physics
  • Year: 2013
  • Issue: 4
  • 356
  • 6692
  • Pages: 31-36

Semiconductor laser diodes power supply

Experimental technique and devices
  • Year: 2010
  • Issue: 2
  • 0
  • 6332
  • Pages: 131-134

Reactor pressure effect on optical properties of MOVPE-grown InGaN heterostructures

Condensed matter physics
  • Year: 2012
  • Issue: 2
  • 0
  • 6331
  • Pages: 32-36

An estimation of plasma radiation losses in the Globus-M tokamak using silicon SPD photodiodes

Experimental technique and devices
  • Year: 2012
  • Issue: 4
  • 0
  • 6312
  • Pages: 70-74

Spectral selectivity of holographic gain gratings in the multiloop cavity laser

Physical optics
  • Year: 2013
  • Issue: 2
  • 1112
  • 7985
  • Pages: 121-129

Single-frequency mode regime of laser diodes

Experimental technique and devices
  • Year: 2013
  • Issue: 2
  • 1355
  • 8229
  • Pages: 89-96