Articles by keywords "diode"

Low-loss reflective X-band phase shifter with wide phase control range

Radiophysics
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 2
  • 192
  • Pages: 315-318

Photonic-electronic IC of a subterahertz GaAs-on-Si in-phase/quadrature mixer

Physical electronics
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 2
  • 215
  • Pages: 187-190

InAsSb solid solution optocouple for carbon dioxide analysis

Physical electronics
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 3
  • 215
  • Pages: 178-182

HOT surface illuminated phoodiodes based on n-InAsSbP/InAs/p-InAsSbP heterostructures

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 2
  • 220
  • Pages: 110-114

Dependence of static and dynamic characteristics of high-voltage pulsed p–i–n diodes on the composition of heteroepitaxial AlxGa1−xAs1−ySby base layers

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 6
  • 3570
  • Pages: 140-144

A new method of managing the discretization of the scale in a mobile differential refractometer

Experimental technique and devices
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 7
  • 2350
  • Pages: 166-172

Heterostructure design features for 975 nm high-power laser diodes

Atom physics and physics of clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 6
  • 2505
  • Pages: 129-133

Numerical simulation of the tunnel effect in the gallium nitride heterostructure on silicon

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 27
  • 3285
  • Pages: 46-56

Thermally stable connecting GaAs/AlGaAs tunnel diodes for laser radiation multi-junction photoconverters

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 24
  • 3525
  • Pages: 165-170

High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 14
  • 3181
  • Pages: 155-159

The electron and proton irradiation effects on the properties of high-voltage 4H-SiC Schottky diodes within the operating temperature range

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 1
  • 59
  • 4421
  • Pages: 9-20

Temperature characterization of GaAs/AlGaAs connecting tunnel diodes

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 4
  • 36
  • 4692
  • Pages: 30-41

Compact solid-state laser with diode optical pumping and high frequency stability

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 9
  • 4109
  • Pages: 120-124

Design and simulation of an optical system of high-power fiber-coupled laser module

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 31
  • 4067
  • Pages: 75-80

Laser diode module over 350 W power output with 200 µm/NA 0.22 fiber

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 16
  • 4120
  • Pages: 23-27

Investigation of the avalanche delay effect in sine-gated single-photon detector

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 16
  • 4047
  • Pages: 459-462

Effect of sulfide-polyamide passivation on dark currents of the InAlAs/InGaAs/InP avalanche photodiodes

Experimental technique and devices
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 28
  • 4103
  • Pages: 352-356

Investigation on the effects of the multiplication area shape on the dark count rate in InGaAs/InAlAs single-photon avalanche photodiodes

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 17
  • 4290
  • Pages: 242-247

Modeling the characteristics of avalanche photodiodes based on Ge/Si

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 30
  • 4531
  • Pages: 232-236

Current and temperature dependences of optical characteristics of powerful deep UV AlGaN LED (λ = 270 nm)

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 28
  • 4625
  • Pages: 170-175

Stability of steady states of plasma diodes with counter-streaming electron and positron flows

Astrophysics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 7
  • 3934
  • Pages: 442-448

Stimulated emission from asymmetric InAs/InAsSb/InAsSbP LED heterostructures

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 10
  • 4655
  • Pages: 191-195

Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 66
  • 5158
  • Pages: 179-184

Power-communicating photo-receiving device

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 17
  • 4738
  • Pages: 160-164

Current-voltage characteristics of Cr/SiC(4H) Schottky diodes

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 20
  • 4631
  • Pages: 83-89

Stability features of inhomogeneous steady-state potential distributions in diode with counter-streaming electron and ion flows

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 10
  • 4879
  • Pages: 32-38

Effect of an external circuit on the stability of thermionic energy converter steady states

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 13
  • 4737
  • Pages: 25-31

Temperature distribution in InAsSbP/InAsSb/InAs double heterostructure on-chip sensors

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 21
  • 4689
  • Pages: 119-125

Low-adhesive silicone rubbers for flexible light-emitting devices

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 8
  • 5134
  • Pages: 320-325

Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 38
  • 5397
  • Pages: 281-284

The effect of mesa-stripe design parameters on the 975 nm laser diode output characteristics

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 16
  • 5121
  • Pages: 235-238

Wavelength stabilized laser module for highpower fiber laser pumping

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 19
  • 5196
  • Pages: 190-195

Reliability of 808 nm QCW laser diode arrays

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 13
  • 4983
  • Pages: 167-171

Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 30
  • 5271
  • Pages: 145-149

Сurrent-voltage characteristics and photoelectric properties of por-Si/Si-p/Si-n diodes with different porous layer thickness

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 17
  • 5643
  • Pages: 143-148

A triangulation sensor for measuring the displacements and high-precision monitoring of the production performance

Experimental technique and devices
  • Year: 2020
  • Volume: 13
  • Issue: 1
  • 42
  • 9352
  • Pages: 54-65

The relation of volume and surface effects with a charge barrier height in a dynamic p–i–n-photodyode

Condensed matter physics
  • Year: 2018
  • Volume: 11
  • Issue: 2
  • 16
  • 9444
  • Pages: 16-25

Influence of aluminum content in blocking layer  on properties of green InGaAlN LEDs

Condensed matter physics
  • Year: 2013
  • Issue: 4
  • 357
  • 9056
  • Pages: 31-36

Semiconductor laser diodes power supply

Experimental technique and devices
  • Year: 2010
  • Issue: 2
  • 0
  • 8737
  • Pages: 131-134

Reactor pressure effect on optical properties of MOVPE-grown InGaN heterostructures

Condensed matter physics
  • Year: 2012
  • Issue: 2
  • 0
  • 8777
  • Pages: 32-36

An estimation of plasma radiation losses in the Globus-M tokamak using silicon SPD photodiodes

Experimental technique and devices
  • Year: 2012
  • Issue: 4
  • 0
  • 8913
  • Pages: 70-74

Spectral selectivity of holographic gain gratings in the multiloop cavity laser

Physical optics
  • Year: 2013
  • Issue: 2
  • 1113
  • 10368
  • Pages: 121-129

Single-frequency mode regime of laser diodes

Experimental technique and devices
  • Year: 2013
  • Issue: 2
  • 1357
  • 10632
  • Pages: 89-96