Articles by keywords "semiconductors"

Effect of GaAs buffer layer on the characteristics of GaAs nanowires grown by molecular beam epitaxy on Si(111) substrates

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 0
  • 28
  • Pages: 152-155

The length distribution of nanowires with forward and backward surface diffusion

Simulation of physical processes
  • Year: 2025
  • Volume: 18
  • Issue: 4
  • 2
  • 83
  • Pages: 34-47

Spin-lattice relaxation processes of nuclear spins in GaAs:Mn

Bulk properties of semiconductors
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 52
  • 3679
  • Pages: 6-10

Study of GaPN(As) layers grown by molecular beam epitaxy on silicon substrates

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 12
  • 2354
  • Pages: 275-278

Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy

Heterostructures, superlattices, quantum wells
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 46
  • 3088
  • Pages: 62-67

Dynamics of electron-nuclear spin system in GaAs:Mn epitaxial layers

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 36
  • 3330
  • Pages: 31-36

Photoluminescence anisotropy in hybrid nanostructures based on gallium phosphide nanowire and 2D transition metal dichalcogenides

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 15
  • 3929
  • Pages: 130-136

Germanium polytypes formation on AlGaAs nanowire surface

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 14
  • 3739
  • Pages: 289-293

Research of the photoelectric parameters of ZnO/Cu2O heterojunction solar cells

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 13
  • 4196
  • Pages: 221-226

Temperature dependence of the energy spectrum of metamorphic InSb/In(Ga,Al)As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 31
  • 4068
  • Pages: 47-52

Optical properties of single InGaN nanowires with core-shell structure

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 48
  • 4737
  • Pages: 114-120

Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 30
  • 4781
  • Pages: 341-345

Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 24
  • 4430
  • Pages: 153-157

Experimental study of all-van-der-Waals waveguide polaritons at room temperature

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 14
  • 4875
  • Pages: 223-225

Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 30
  • 5130
  • Pages: 145-149

Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 30
  • 5038
  • Pages: 75-79

The photomagnetic effect in heteronanostructures based on gallium arsenide with qantum well and delta-layered with manganese

Atom physics and physics of clusters and nanostructures
  • Year: 2010
  • Issue: 4
  • 0
  • 9219
  • Pages: 7-11

Excitonic photolumenescence kinetics of GaAs/AlGaAs structures with shallow quantum wells at low temperatures

Atom physics and physics of clusters and nanostructures
  • Year: 2010
  • Issue: 3
  • 0
  • 8755
  • Pages: 58-62

The results of the 16-th All-Russian Youth Conference on Semiconductor and Nanostructure Physics and Semiconductor Opto- and Nanoelectronics

Chronicle
  • Year: 2015
  • Issue: 1
  • 275
  • 8451
  • Pages: 158-166

The influence of natural irregularities on surface electron scattering

Physical electronics
  • Year: 2014
  • Issue: 4
  • 267
  • 9157
  • Pages: 48-54

he intervalley electron-phonon scattering in the A[III]B[V] crystal

Condensed matter physics
  • Year: 2009
  • Issue: 2
  • 0
  • 9007
  • Pages: 34-38

Composite C60CdS thin films for photoelectronics

Condensed matter physics
  • Year: 2009
  • Issue: 2
  • 0
  • 8880
  • Pages: 23-29

Determinations of electrokinetic properties of semiconducting materials for making nanocathods

Condensed matter physics
  • Year: 2011
  • Issue: 4
  • 0
  • 8622
  • Pages: 39-43

Growing and photoluminescence investigation of silicon-germanium structures doped with erbium on sapphire substrates

Condensed matter physics
  • Year: 2013
  • Issue: 1
  • 559
  • 9421
  • Pages: 24-28