Articles by keywords "semiconductors"

Spin-lattice relaxation processes of nuclear spins in GaAs:Mn

Bulk properties of semiconductors
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 22
  • 226
  • Pages: 6-10

Study of GaPN(As) layers grown by molecular beam epitaxy on silicon substrates

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 7
  • 676
  • Pages: 275-278

Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy

Heterostructures, superlattices, quantum wells
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 33
  • 1760
  • Pages: 62-67

Dynamics of electron-nuclear spin system in GaAs:Mn epitaxial layers

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 22
  • 1964
  • Pages: 31-36

Photoluminescence anisotropy in hybrid nanostructures based on gallium phosphide nanowire and 2D transition metal dichalcogenides

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 11
  • 2194
  • Pages: 130-136

Germanium polytypes formation on AlGaAs nanowire surface

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 12
  • 2295
  • Pages: 289-293

Research of the photoelectric parameters of ZnO/Cu2O heterojunction solar cells

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 11
  • 2381
  • Pages: 221-226

Temperature dependence of the energy spectrum of metamorphic InSb/In(Ga,Al)As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 26
  • 2391
  • Pages: 47-52

Optical properties of single InGaN nanowires with core-shell structure

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 41
  • 3157
  • Pages: 114-120

Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 24
  • 3179
  • Pages: 341-345

Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 17
  • 2847
  • Pages: 153-157

Experimental study of all-van-der-Waals waveguide polaritons at room temperature

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 13
  • 3355
  • Pages: 223-225

Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 25
  • 3451
  • Pages: 145-149

Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 28
  • 3406
  • Pages: 75-79

The photomagnetic effect in heteronanostructures based on gallium arsenide with qantum well and delta-layered with manganese

Atom physics and physics of clusters and nanostructures
  • Year: 2010
  • Issue: 4
  • 0
  • 7751
  • Pages: 7-11

Excitonic photolumenescence kinetics of GaAs/AlGaAs structures with shallow quantum wells at low temperatures

Atom physics and physics of clusters and nanostructures
  • Year: 2010
  • Issue: 3
  • 0
  • 7294
  • Pages: 58-62

The results of the 16-th All-Russian Youth Conference on Semiconductor and Nanostructure Physics and Semiconductor Opto- and Nanoelectronics

Chronicle
  • Year: 2015
  • Issue: 1
  • 275
  • 7157
  • Pages: 158-166

The influence of natural irregularities on surface electron scattering

Physical electronics
  • Year: 2014
  • Issue: 4
  • 267
  • 7699
  • Pages: 48-54

he intervalley electron-phonon scattering in the A[III]B[V] crystal

Condensed matter physics
  • Year: 2009
  • Issue: 2
  • 0
  • 7569
  • Pages: 34-38

Composite C60CdS thin films for photoelectronics

Condensed matter physics
  • Year: 2009
  • Issue: 2
  • 0
  • 7322
  • Pages: 23-29

Determinations of electrokinetic properties of semiconducting materials for making nanocathods

Condensed matter physics
  • Year: 2011
  • Issue: 4
  • 0
  • 7156
  • Pages: 39-43

Growing and photoluminescence investigation of silicon-germanium structures doped with erbium on sapphire substrates

Condensed matter physics
  • Year: 2013
  • Issue: 1
  • 559
  • 7957
  • Pages: 24-28

Сообщить автору об опечатке:

Адрес страницы с ошибкой:

Текст с ошибкой:

Ваш комментарий или корректная версия: