Articles by keywords "quantum well"
Luminescence in nanostructures with compensated quantum wells under optical and electrical pumping
- Year: 2024
- Volume: 17
- Issue: 1.1
- 3
- 229
- Pages: 68-76
Temperature dependence of the energy spectrum of metamorphic InSb/In(Ga,Al)As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy
- Year: 2023
- Volume: 16
- Issue: 3.1
- 18
- 929
- Pages: 47-52
Polarimetry of waveguiding heterostructures with quantum well-dots
- Year: 2023
- Volume: 16
- Issue: 1.3
- 7
- 1304
- Pages: 140-145
Modeling of coherent dynamics of excitons in a GaAs quantum well in the pump-probe experiment
- Year: 2023
- Volume: 16
- Issue: 1.3
- 15
- 1348
- Pages: 79-84
Investigation of infrared photoresponse from structure with GeSiSn/Si multiple quantum wells
- Year: 2023
- Volume: 16
- Issue: 1.3
- 18
- 1412
- Pages: 73-78
Thermal characteristics of III-V microlasers bonded onto silicon board
- Year: 2023
- Volume: 16
- Issue: 1.2
- 17
- 1448
- Pages: 108-113
Dominant recombination in a GaAs solar cell through a compressed GaAs/In0.4Ga0.6As/GaAs quantum well
- Year: 2023
- Volume: 16
- Issue: 1.2
- 18
- 1480
- Pages: 77-82
1550 nm high-speed VCSELS based on compressively strained In(Al)GaAs QWs
- Year: 2023
- Volume: 16
- Issue: 1.1
- 33
- 1572
- Pages: 456-462
Photoluminescence and energy transfer between CdTe/CdMnTe quantum wells separated by thick barriers
- Year: 2023
- Volume: 16
- Issue: 1.1
- 20
- 1530
- Pages: 49-53
Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method
- Year: 2023
- Volume: 16
- Issue: 1.1
- 22
- 1540
- Pages: 22-27
Near-infrared photoluminescence in n-GaAs/AlGaAs quantum wells with different locations of compensating acceptor impurity
- Year: 2022
- Volume: 15
- Issue: 4
- 78
- 2126
- Pages: 32-43
Integrated optical transceiver based on III-V microdisk laser and photodiode
- Year: 2022
- Volume: 15
- Issue: 3.3
- 20
- 1924
- Pages: 371-375
The investigation of optical coupling of microlasers with tapered fiber
- Year: 2022
- Volume: 15
- Issue: 3.3
- 19
- 2180
- Pages: 167-170
Analysis of characteristics of InGaAs/GaAs microdisk lasers bonded onto silicon board
- Year: 2022
- Volume: 15
- Issue: 3.3
- 23
- 1922
- Pages: 163-166
Excitonic photolumenescence kinetics of GaAs/AlGaAs structures with shallow quantum wells at low temperatures
- Year: 2010
- Issue: 3
- 0
- 5924
- Pages: 58-62
Exitons condensation in quasi-2D SiGe layers - Si/Si1-xGex/Si heterostructures
- Year: 2010
- Issue: 3
- 0
- 6133
- Pages: 7-13
Small hydrogen-like centers and excitons in structures with single quantum wells
- Year: 2009
- Issue: 3
- 0
- 6048
- Pages: 62-66
Impurity assisted terahertz luminescence in quantum well nanostructures under interband photoexсitation
- Year: 2016
- Issue: 4
- 87
- 6031
- Pages: 56-65
Near- and far-infrared emission from GaAs/AlGaAs quantum wells under interband optical excitation
- Year: 2013
- Issue: 4
- 427
- 6536
- Pages: 109-114
The states density simulation in 2D-system of charged impurities
- Year: 2010
- Issue: 2
- 0
- 5760
- Pages: 23-27
Electron recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells
- Year: 2012
- Issue: 3
- 0
- 5899
- Pages: 9-15