Articles by keywords "quantum dot"
Formation of site-controlled InAs quantum dots on nanopatterned GaAs(111)B surfaces
Balakirev S.V.
Chernenko N.E.
Shandyba N.A.
Kirichenko D.V.
Dukhan D.D.
Eremenko M.M.
Solodovnik M.S.
- Year: 2025
- Volume: 18
- Issue: 3.2
- 1
- 144
- Pages: 115-118
Injection edge-emitting microlasers with InGaAs/GaAs quantum dot active region
Derkach N.N.
Makhov I.S.
Obraztsova A.A.
Voitovich V.I.
Komarov S.D.
Fominykh N.A.
Chernenko N.E.
Shandyba N.A.
Solodovnik M.S.
Kryzhanovskaya N.V.
Zhukov A.E.
- Year: 2025
- Volume: 18
- Issue: 3.2
- 0
- 121
- Pages: 29-32
MBE growth of wurtzite AlGaAs nanowires with zinc-blende insertions
- Year: 2025
- Volume: 18
- Issue: 3.1
- 2
- 197
- Pages: 148-151
Growth of GaN nanowires with InN inserts by PA-MBE
Gridchin V.O.
Mintairov A.M.
Shugabaev T.
Axenov V.Yu.
Vlasov A.S.
Lendyashova V.V.
Kotlyar K.P.
Eliseev I.A.
Khrebtov A.I.
Reznik R.R.
Davydov V.Yu.
Cirlin G.E.
- Year: 2025
- Volume: 18
- Issue: 3.1
- 0
- 141
- Pages: 139-142
Fluorescent properties of boron nitride quantum dots depending on functionalizing ligands
- Year: 2024
- Volume: 17
- Issue: 3.2
- 21
- 2276
- Pages: 297-300
Ab initio study of In adsorption on AlxGa1–xAs substrates at the first stages of droplet epitaxy
- Year: 2024
- Volume: 17
- Issue: 3.1
- 14
- 2886
- Pages: 100-104
Study of the photoluminescence properties of subcritical InAs/GaAs quantum dots formed onto structured substrates
- Year: 2024
- Volume: 17
- Issue: 3.1
- 18
- 2649
- Pages: 79-83
Quantum dots formation by InGaAs decomposition onto a patterned GaAs surface
Chernenko N.E.
Makhov I.S.
Melnichenko I.A.
Yakunina K.D.
Balakirev S.V.
Kryzhanovskaya N.V.
Solodovnik M.S.
- Year: 2024
- Volume: 17
- Issue: 3.1
- 12
- 2644
- Pages: 38-42
Photoinduced light absorption in Ge/Si quantum dots
Ustimenko R.V.
Karaulov D.A.
Vinnichenko M.Ya.
Makhov I.S.
Firsov D.A.
Sarkisyan H.A.
Sargsian T.A.
Hayrapetyan D.B.
- Year: 2024
- Volume: 17
- Issue: 1.1
- 43
- 3717
- Pages: 105-112
Determination of the isoelectric point of the antibody to SARS-CoV-2 by molecular modeling for conjugation with quantum dots
- Year: 2023
- Volume: 16
- Issue: 3.2
- 12
- 4207
- Pages: 360-365
Coating of hydrophilic chalcogenide quantum dots with carboxymethyl chitosan for lateral flow immunoassay applications
- Year: 2023
- Volume: 16
- Issue: 3.2
- 7
- 3817
- Pages: 312-317
Quantum dot-induced photoluminescence enhancement of InGaN nanowires
Shugabaev T.
Gridchin V.O.
Reznik R.R.
Khrebtov A.I.
Melnichenko I.A.
Kulagina A.S.
Kotlyar K.P.
Lendyashova V.V.
Kryzhanovskaya N.V.
Cirlin G.E.
- Year: 2023
- Volume: 16
- Issue: 3.2
- 13
- 3989
- Pages: 255-260
Phosphine-free synthesis of selenide colloidal quantum dots
- Year: 2023
- Volume: 16
- Issue: 3.2
- 21
- 4127
- Pages: 125-129
Luminescence kinetic of CsPbBr3 quantum dots
- Year: 2023
- Volume: 16
- Issue: 3.1
- 32
- 3953
- Pages: 321-324
Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates
Chernenko N.E.
Makhov I.S.
Balakirev S.V.
Kirichenko D.V.
Shandyba N.A.
Kryzhanovskaya N.V.
Solodovnik M.S.
- Year: 2023
- Volume: 16
- Issue: 3.1
- 18
- 3912
- Pages: 64-68
Multi-state lasing in microdisk lasers with InAs/GaAs quantum dots
- Year: 2023
- Volume: 16
- Issue: 1.3
- 26
- 4356
- Pages: 157-162
Suppression of molecular anyon states in the magneto-photoluminescence spectra of InP/GaInP2 quantum dots at a temperature of 30 K
- Year: 2023
- Volume: 16
- Issue: 1.3
- 17
- 4294
- Pages: 112-116
Transformation kinetics of a two-dimensional GaN thin layer grown on AlN surface during ammonia flow cycling
- Year: 2023
- Volume: 16
- Issue: 1.3
- 21
- 4294
- Pages: 62-66
Influence of GaP compensating layers on the characteristics of GaAs photovoltaic converters with InGaAs quantum dot arrays
- Year: 2023
- Volume: 16
- Issue: 1.1
- 18
- 4380
- Pages: 411-415
Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface
Reznik R.R.
Gridchin V.O.
Kotlyar K.P.
Dragunova A.S.
Kryzhanovskaya N.V.
Samsonenko Yu.B.
Soshnikov I.P.
Khrebtov A.I.
Cirlin G.E.
- Year: 2023
- Volume: 16
- Issue: 1.1
- 24
- 4495
- Pages: 153-157
Investigation of the optical properties of quantum dots depending on the nature and number of additional semiconductor layers
- Year: 2022
- Volume: 15
- Issue: 3.3
- 14
- 4883
- Pages: 106-110
Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface
- Year: 2022
- Volume: 15
- Issue: 3.3
- 17
- 4954
- Pages: 48-53
Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density
- Year: 2022
- Volume: 15
- Issue: 3.3
- 12
- 5305
- Pages: 42-47
Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures
- Year: 2022
- Volume: 15
- Issue: 3.3
- 26
- 5380
- Pages: 31-35
Study of quantum dots conjugation with antibodies to be used in a lateral flow immunochromatographic assay
- Year: 2022
- Volume: 15
- Issue: 3.2
- 44
- 5028
- Pages: 331-335
Förster resonance energy transfer from colloidal quantum dots to xanthene dye in polymer film
- Year: 2022
- Volume: 15
- Issue: 3.2
- 14
- 5287
- Pages: 80-85
Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy
- Year: 2022
- Volume: 15
- Issue: 3.2
- 32
- 5110
- Pages: 75-79
Investigation of far-field patterns of semiconductor microlasers with an active region based on InGaAs/GaAs quantum well-dots
Moiseev E.I.
Kryzhanovskaya N.V.
Zubov Fedor I.
Nahorny A.V.
Urmanov B.D.
Fominykh N.A.
Ivanov K.A.
Mintairov S.A.
Kalyuzhniy N.A.
Kulagina M.M.
Maximov M.V.
Zhukov A.E.
- Year: 2022
- Volume: 15
- Issue: 3.2
- 61
- 6428
- Pages: 25-30
Effect of gamma radiation on luminescence and photoconductivity of MEH-PPV – lead sulfide nanocomposite
- Year: 2018
- Volume: 11
- Issue: 4
- 25
- 9378
- Pages: 35-46
Gamma-induced effect on the luminescence of nanocomposites of MEH-PPV conductive polymer with lead sulphide quantum dots
- Year: 2018
- Volume: 11
- Issue: 2
- 26
- 9213
- Pages: 41-48
Structural features of indium antimonide quantum dots on the indium arsenide substrate
- Year: 2015
- Issue: 2
- 365
- 9595
- Pages: 11-18
The influence of temperature and electric field on emission of carriers out of the InAs/CaAs quantum dots
- Year: 2009
- Issue: 2
- 0
- 8500
- Pages: 11-14