Articles by keywords "photoluminescence"

Influence of the wet-chemical treatment on the optical and structural properties of core-shell InGaN nanowires

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 0
  • 17
  • Pages: 306-309

Photoluminescence of self-induced InAs nanowires diluted with nitrogen

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 1
  • 72
  • Pages: 34-37

Creation of optical isolated GaP(NAs) microcavities on silicon

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 8
  • 294
  • Pages: 25-35

Formation and light-emitting properties of ion-synthesized Ga2O3 nanoinclusions in the Al2O3/Si matrix

Novel materials
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 10
  • 910
  • Pages: 171-177

Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 10
  • 956
  • Pages: 143-148

Luminescence in nanostructures with compensated quantum wells under optical and electrical pumping

Heterostructures, superlattices, quantum wells
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 15
  • 1202
  • Pages: 68-76

Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers

Structure growth, surface, and interfaces
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 19
  • 1109
  • Pages: 43-48

Ultraviolet photoluminescence enhancement of zinc oxide nanocrystals in colloidal mixtures with spark discharge aluminum nanoparticles

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 14
  • 1635
  • Pages: 261-266

Quantum dot-induced photoluminescence enhancement of InGaN nanowires

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 5
  • 1475
  • Pages: 255-260

Photoluminescence anisotropy in hybrid nanostructures based on gallium phosphide nanowire and 2D transition metal dichalcogenides

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 7
  • 1404
  • Pages: 130-136

Towards versatile photonics based on GaP nanowires decorated with carbon dots

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 17
  • 1683
  • Pages: 187-192

Deep-Level Emission Tailoring in ZnO Nanostructures Grown via Hydrothermal Synthesis

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 15
  • 1512
  • Pages: 176-181

The features in the formation of oxide porous structures based on SiO2–SnOх

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 18
  • 1700
  • Pages: 10-15

Influence of stimulated interband emission on terahertz photoluminescence in n-type gallium arsenide layers

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3
  • 137
  • 2317
  • Pages: 29-38

Synthesis and PL study of Sr3 (VO4 ) 2 :Eu3+ phosphor for W-LED application

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 2
  • 26
  • 2334
  • Pages: 61-67

Suppression of molecular anyon states in the magneto-photoluminescence spectra of InP/GaInP2 quantum dots at a temperature of 30 K

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 13
  • 2142
  • Pages: 112-116

Interband photoluminescence of InAs(P)/Si nanowires

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 19
  • 2202
  • Pages: 101-107

Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 18
  • 2179
  • Pages: 33-38

Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 33
  • 2050
  • Pages: 14-19

Дислокационная фотолюминесценция в самоимплантированном кремнии с различными ориентациями поверхности

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 11
  • 2159
  • Pages: 162-166

Near-infrared photoluminescence in n-GaAs/AlGaAs quantum wells with different locations of compensating acceptor impurity

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 4
  • 80
  • 2966
  • Pages: 32-43

Photoluminescence from lead halide perovskite superlattices

Physics of molecules
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 22
  • 2650
  • Pages: 326-329

Peculiarities of the luminescence response of two-dimensional photonic crystals with ordered Ge(Si) nanoislands obtained using different ordering approaches

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 13
  • 2434
  • Pages: 188-193

Investigation of temperature stability of germanium nanowires obtained by electrochemical deposition

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 27
  • 2860
  • Pages: 59-64

Effect of gamma radiation on luminescence and photoconductivity of MEH-PPV – lead sulfide nanocomposite

Condensed matter physics
  • Year: 2018
  • Volume: 11
  • Issue: 4
  • 24
  • 6960
  • Pages: 35-46

Effect of gamma radiation on the thin nanocomposite MEH-PPV/C60 films

Condensed matter physics
  • Year: 2018
  • Volume: 11
  • Issue: 4
  • 35
  • 6970
  • Pages: 24-34

Excitonic photolumenescence kinetics of GaAs/AlGaAs structures with shallow quantum wells at low temperatures

Atom physics and physics of clusters and nanostructures
  • Year: 2010
  • Issue: 3
  • 0
  • 6599
  • Pages: 58-62

Exitons condensation in quasi-2D SiGe layers - Si/Si1-xGex/Si heterostructures

Condensed matter physics
  • Year: 2010
  • Issue: 3
  • 0
  • 6785
  • Pages: 7-13

Gamma-induced effect on the luminescence of nanocomposites of MEH-PPV conductive polymer with lead sulphide quantum dots

Condensed matter physics
  • Year: 2018
  • Volume: 11
  • Issue: 2
  • 26
  • 6857
  • Pages: 41-48

The structure of ZnTPP, ZnTPP-C60 thin films and X-ray effect on their photoluminescence

Condensed matter physics
  • Year: 2018
  • Volume: 11
  • Issue: 2
  • 32
  • 7060
  • Pages: 26-40

Properties of the semiconductor structure with a p–n-junction created in a porous silicon film under laser radiation

Condensed matter physics
  • Year: 2018
  • Volume: 11
  • Issue: 1
  • 30
  • 7184
  • Pages: 18-25

Auger-recombination effect on the nonequilibrium charge carriers concentration in InGaAsSb /AlGaAsSb quantum wells

Atom physics and physics of clusters and nanostructures
  • Year: 2016
  • Issue: 4
  • 114
  • 6739
  • Pages: 66-76

Synthesis and luminescence properties OF Ca5(PO4)3Cl:Eu2+ phosphor for solid state lighting

Physical materials technology
  • Year: 2016
  • Issue: 1
  • 270
  • 7142
  • Pages: 41-47

Near- and far-infrared emission from GaAs/AlGaAs quantum wells under interband optical excitation

Condensed matter physics
  • Year: 2013
  • Issue: 4
  • 427
  • 7227
  • Pages: 109-114

Energy spectrum and optical transitions in CdHgTe nanoheterostructures

Atom physics and physics of clusters and nanostructures
  • Year: 2012
  • Issue: 2
  • 1
  • 6735
  • Pages: 69-73

Features of energy spectra and properties of polycrystalline Pb[1-x]Cd[x]Se films formed on calcium fluoride and glass substrates

Condensed matter physics
  • Year: 2012
  • Issue: 2
  • 0
  • 6308
  • Pages: 7-17

Improvement and stabilization of optical characteristics of the porous silicon

Physical materials technology
  • Year: 2013
  • Issue: 2
  • 660
  • 7319
  • Pages: 130-136