Articles by keywords "gallium nitride"
The resistive switching effect in the n-GaN/p-Si heterostructures
- Year: 2026
- Volume: 19
- Issue: 1
- 10
- 165
- Pages: 9-18
Two bands in PL spectra of InGaN/GaN superlattice embedded in GaN nanowire
- Year: 2025
- Volume: 18
- Issue: 4.1
- 3
- 371
- Pages: 44-48
Optical reflectance spectroscopy for barrier thickness measurement of AlGaN/GaN heterostructures: comparison with X-ray reflectometry
- Year: 2025
- Volume: 18
- Issue: 3.1
- 3
- 487
- Pages: 143-147
Memristor effect in heterostructures based on gallium nitride nanowires on silicon
- Year: 2025
- Volume: 18
- Issue: 4
- 17
- 592
- Pages: 9-20
Near-UV detectors based on ultrathin GaN epitaxial layers
- Year: 2025
- Volume: 18
- Issue: 1.1
- 12
- 3781
- Pages: 100-104
Polarized Raman scattering in strained GaN nanowires
- Year: 2025
- Volume: 18
- Issue: 1.1
- 8
- 3673
- Pages: 83-87
Fluorescence of hybrid structures based on carbon dots and GaP, GaN, Si nanowires
- Year: 2025
- Volume: 18
- Issue: 1.1
- 12
- 3738
- Pages: 77-82
Effect of different types of phonons on the two-dimensional electron gas heating at GaN/AlGaN heterointerface
- Year: 2025
- Volume: 18
- Issue: 1.1
- 17
- 3898
- Pages: 58-66
Influence of in-situ plasma treatment during PE-ALD of GaN on growth rate and morphology
- Year: 2024
- Volume: 17
- Issue: 3.2
- 15
- 2469
- Pages: 152-156
Numerical simulation of the tunnel effect in the gallium nitride heterostructure on silicon
- Year: 2024
- Volume: 17
- Issue: 3
- 27
- 3513
- Pages: 46-56
Optical properties of GaN epitaxial layers in mid- and far-infrared ranges
- Year: 2024
- Volume: 17
- Issue: 1.1
- 66
- 4155
- Pages: 12-19
Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction
- Year: 2022
- Volume: 15
- Issue: 3.2
- 30
- 5481
- Pages: 145-149
Semipolar GaN layers on nanostructured silicon: technology and properties
- Year: 2022
- Volume: 15
- Issue: 3.1
- 19
- 5690
- Pages: 179-184
Mechanical stresses in gallium nitride films grown on substrates with a mask
- Year: 2011
- Issue: 3
- 1
- 9235
- Pages: 14-16
Far-infrared radiation emission by hot two-dimensional electrons in single CaN/AICaN heterojunction
- Year: 2011
- Issue: 2
- 0
- 9073
- Pages: 25-30
The influence of collision cascade density on GaN surface topography and surface shift under atomic and molecular ion bombardment
- Year: 2012
- Issue: 2
- 0
- 9601
- Pages: 55-61
Molecular dynamic simulation of damage formation in GaN under atomic and molecular ion bombardment
- Year: 2012
- Issue: 2
- 0
- 9256
- Pages: 49-55