Growth modes of HVPE gallium nitride films

Condensed matter physics
Authors:
Latyshev Philipp E. Bochkareva Nataliya I. Tsyuk Alexander I. Voronenkov Vladislav V. Gorbunov Ruslan I.
Abstract:

The effect of growth parameters on stress in thick GaN films grown on sapphire by HVPE method has been investigated. We have found two modes of growth with different growth stress. Films grown in one mode have rough surfaces and low stress. The second mode leads to smooth surfaces but the films contain many cracks due to high growth stress. A combination of these modes allows growth of films without cracks and with smooth surfaces.