Articles by keywords "gallium nitride"
Near-UV detectors based on ultrathin GaN epitaxial layers
- Year: 2025
- Volume: 18
- Issue: 1.1
- 1
- 164
- Pages: 100-104
Polarized Raman scattering in strained GaN nanowires
- Year: 2025
- Volume: 18
- Issue: 1.1
- 1
- 160
- Pages: 83-87
Fluorescence of hybrid structures based on carbon dots and GaP, GaN, Si nanowires
- Year: 2025
- Volume: 18
- Issue: 1.1
- 1
- 187
- Pages: 77-82
Effect of different types of phonons on the two-dimensional electron gas heating at GaN/AlGaN heterointerface
- Year: 2025
- Volume: 18
- Issue: 1.1
- 5
- 191
- Pages: 58-66
Influence of in-situ plasma treatment during PE-ALD of GaN on growth rate and morphology
- Year: 2024
- Volume: 17
- Issue: 3.2
- 5
- 674
- Pages: 152-156
Numerical simulation of the tunnel effect in the gallium nitride heterostructure on silicon
- Year: 2024
- Volume: 17
- Issue: 3
- 25
- 1164
- Pages: 46-56
Optical properties of GaN epitaxial layers in mid- and far-infrared ranges
- Year: 2024
- Volume: 17
- Issue: 1.1
- 48
- 2022
- Pages: 12-19
Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction
- Year: 2022
- Volume: 15
- Issue: 3.2
- 25
- 3451
- Pages: 145-149
Semipolar GaN layers on nanostructured silicon: technology and properties
- Year: 2022
- Volume: 15
- Issue: 3.1
- 17
- 3610
- Pages: 179-184
Mechanical stresses in gallium nitride films grown on substrates with a mask
- Year: 2011
- Issue: 3
- 1
- 7364
- Pages: 14-16
Far-infrared radiation emission by hot two-dimensional electrons in single CaN/AICaN heterojunction
- Year: 2011
- Issue: 2
- 0
- 7155
- Pages: 25-30
The influence of collision cascade density on GaN surface topography and surface shift under atomic and molecular ion bombardment
- Year: 2012
- Issue: 2
- 0
- 7570
- Pages: 55-61
Molecular dynamic simulation of damage formation in GaN under atomic and molecular ion bombardment
- Year: 2012
- Issue: 2
- 0
- 7338
- Pages: 49-55