Articles by keywords "Gallium nitride"

Near-UV detectors based on ultrathin GaN epitaxial layers

Optoelectronic and nanoelectronic devices
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 3
  • 395
  • Pages: 100-104

Polarized Raman scattering in strained GaN nanowires

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 2
  • 381
  • Pages: 83-87

Fluorescence of hybrid structures based on carbon dots and GaP, GaN, Si nanowires

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 2
  • 410
  • Pages: 77-82

Effect of different types of phonons on the two-dimensional electron gas heating at GaN/AlGaN heterointerface

Heterostructures, superlattices, quantum wells
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 11
  • 436
  • Pages: 58-66

Influence of in-situ plasma treatment during PE-ALD of GaN on growth rate and morphology

Physics of molecules, clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 6
  • 821
  • Pages: 152-156

Numerical simulation of the tunnel effect in the gallium nitride heterostructure on silicon

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 25
  • 1323
  • Pages: 46-56

Optical properties of GaN epitaxial layers in mid- and far-infrared ranges

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 49
  • 2178
  • Pages: 12-19

Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction

Physical electronics
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 25
  • 3589
  • Pages: 145-149

Semipolar GaN layers on nanostructured silicon: technology and properties

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 17
  • 3739
  • Pages: 179-184

Mechanical stresses in gallium nitride films grown on substrates with a mask

Condensed matter physics
  • Year: 2011
  • Issue: 3
  • 1
  • 7479
  • Pages: 14-16

Growth modes of HVPE gallium nitride films

Condensed matter physics
  • Year: 2011
  • Issue: 3
  • 0
  • 7071
  • Pages: 10-13

Far-infrared radiation emission by hot two-dimensional electrons in single CaN/AICaN heterojunction

Condensed matter physics
  • Year: 2011
  • Issue: 2
  • 0
  • 7299
  • Pages: 25-30

The influence of collision cascade density on GaN surface topography and surface shift under atomic and molecular ion bombardment

Condensed matter physics
  • Year: 2012
  • Issue: 2
  • 0
  • 7719
  • Pages: 55-61

Molecular dynamic simulation of damage formation in GaN under atomic and molecular ion bombardment

Condensed matter physics
  • Year: 2012
  • Issue: 2
  • 0
  • 7475
  • Pages: 49-55

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