Articles by keywords "отжиг"

Photoluminescence and photoreflectance of annealed HgCdTe films with high CdTe content

Bulk properties of semiconductors
  • Year: 2026
  • Volume: 19
  • Issue: 1.1
  • 2
  • 44
  • Pages: 6-11

Effect of rapid thermal annealing on the properties of GaPN(As)-based heterostructures grown on silicon substrates

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 6
  • 662
  • Pages: 45-48

CoSi ultrathin films on Si(111) substrate: comparison of the stage formation in ultra-high vacuum and during annealing in argon

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 22
  • 3207
  • Pages: 25-30

Low-temperature treatment of Al/Ti nanolayers to form solid solution in order to improve the ohmic contacts process formation

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 30
  • 3347
  • Pages: 271-277

Influence of annealing conditions on the characteristics of nanoholes formed by focused ion beams on the GaAs(111) surface

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 14
  • 3276
  • Pages: 58-62

Features of isovalent doping of gallium arsenide with bismuth ions

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 21
  • 4279
  • Pages: 20-24

The electron and proton irradiation effects on the properties of high-voltage 4H-SiC Schottky diodes within the operating temperature range

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 1
  • 65
  • 4940
  • Pages: 9-20

A facile low-temperature approach for organics removal from SiO2-CTAB mesoporous particles

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 5
  • 4353
  • Pages: 183-187

Дислокационная фотолюминесценция в самоимплантированном кремнии с различными ориентациями поверхности

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 15
  • 5058
  • Pages: 162-166

Modification of the optical and electrical properties of NiO films by thermal annealing

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 18
  • 5697
  • Pages: 285-289

Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 36
  • 5604
  • Pages: 157-162

Study of FIB-modified silicon areas by AFM and Raman spectroscopy

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 23
  • 5534
  • Pages: 59-63

Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 24
  • 5538
  • Pages: 54-58

Effect of thermal annealing on grain size and phase changes in magnetron titanium oxide films

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 34
  • 6081
  • Pages: 149-154

The thermoelastic stresses during laser annealing of titanium dioxide on a sapphire substrate

Simulation of physical processes
  • Year: 2022
  • Volume: 15
  • Issue: 3
  • 37
  • 6433
  • Pages: 100-110

The energy spectrum and some properties of lead sulphide implanted with oxygen

Condensed matter physics
  • Year: 2015
  • Issue: 1
  • 410
  • 9625
  • Pages: 9-20

Characterization of radiation defects in austenitic alloys

Condensed matter physics
  • Year: 2014
  • Issue: 2
  • 306
  • 9417
  • Pages: 37-45

Effect of temperature on properties of DLC films and DLC-Ni:C sandwich growth

Condensed matter physics
  • Year: 2013
  • Issue: 4
  • 510
  • 10318
  • Pages: 115-122

Photoluminescence and Raman scattering in periodic arrays of silicon nanoinclusions in zirconia dioxide

Atom physics and physics of clusters and nanostructures
  • Year: 2010
  • Issue: 1
  • 0
  • 9267
  • Pages: 71-78

A formation method of amorphous and crystalline silicon nanoclusters in dielectric films

Atom physics and physics of clusters and nanostructures
  • Year: 2010
  • Issue: 1
  • 0
  • 9066
  • Pages: 66-71