Nikitina Ekaterina V.
Latest issues
- 2025, Volume 18 Issue 1.1 Full text
- 2025, Volume 18 Issue 1
- 2024, Volume 17 Issue 4 Full text
- 2024, Volume 17 Issue 3.2 Full text
Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction
- Year: 2022
- Volume: 15
- Issue: 3.2
- 25
- 3426
- Pages: 145-149
Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
- Year: 2022
- Volume: 15
- Issue: 3.3
- 32
- 3395
- Pages: 157-162
Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel
- Year: 2023
- Volume: 16
- Issue: 3.1
- 7
- 2277
- Pages: 133-137
The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
- Year: 2023
- Volume: 16
- Issue: 3.1
- 11
- 2182
- Pages: 439-443
GaN based ultraviolet narrowband photodetectors
- Year: 2024
- Volume: 17
- Issue: 3.1
- 6
- 888
- Pages: 220-223
Study of GaPN(As) layers grown by molecular beam epitaxy on silicon substrates
- Year: 2024
- Volume: 17
- Issue: 3.2
- 7
- 659
- Pages: 275-278
Sheet resistance of AlGaN/GaN heterostructures with barriers of increased Al content
- Year: 2025
- Volume: 18
- Issue: 1.1
- 1
- 162
- Pages: 46-51
Near-UV detectors based on ultrathin GaN epitaxial layers
- Year: 2025
- Volume: 18
- Issue: 1.1
- 1
- 137
- Pages: 100-104