Latest issues
- 2025, Volume 18 Issue 4
- 2025, Volume 18 Issue 3.2 Full text
- 2025, Volume 18 Issue 3.1 Full text
- 2025, Volume 18 Issue 3 Full text
Fabrication and investigation of UV photodiode based on n-GaN / p-NiO heterojunction
- Year: 2022
- Volume: 15
- Issue: 3.2
- 30
- 5139
- Pages: 145-149
Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
- Year: 2022
- Volume: 15
- Issue: 3.3
- 35
- 5000
- Pages: 157-162
Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel
- Year: 2023
- Volume: 16
- Issue: 3.1
- 10
- 3890
- Pages: 133-137
The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
- Year: 2023
- Volume: 16
- Issue: 3.1
- 15
- 3727
- Pages: 439-443
GaN based ultraviolet narrowband photodetectors
- Year: 2024
- Volume: 17
- Issue: 3.1
- 14
- 2560
- Pages: 220-223
Study of GaPN (As) layers grown by molecular beam epitaxy on silicon substrates
- Year: 2024
- Volume: 17
- Issue: 3.2
- 12
- 2361
- Pages: 275-278
Sheet resistance of AlGaN/GaN heterostructures with barriers of increased Al content
- Year: 2025
- Volume: 18
- Issue: 1.1
- 20
- 3434
- Pages: 46-51
Near-UV detectors based on ultrathin GaN epitaxial layers
- Year: 2025
- Volume: 18
- Issue: 1.1
- 10
- 3398
- Pages: 100-104
Optical properties of disk microresonators based on wide-bandgap III-N materials
- Year: 2025
- Volume: 18
- Issue: 3.1
- 1
- 58
- Pages: 209-213
Structural and optical properties of InP layers obtained by plasma-enhanced atomic layer deposition at different temperatures
- Year: 2025
- Volume: 18
- Issue: 3.1
- 0
- 41
- Pages: 247-251
Effect of rapid thermal annealing on the properties of GaPN (As)-based heterostructures grown on silicon substrates
- Year: 2025
- Volume: 18
- Issue: 3.2
- 0
- 20
- Pages: 45-48