Gridchin Vladislav O.
Latest issues
- 2024, Volume 17 Issue 3
- 2024, Volume 17 Issue 2
- 2024, Volume 17 Issue 1.1
- 2024, Volume 17 Issue 1 Full text
Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures
- Year: 2022
- Volume: 15
- Issue: 3.3
- 23
- 2655
- Pages: 31-35
Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate
- Year: 2022
- Volume: 15
- Issue: 3.3
- 29
- 2517
- Pages: 281-284
Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates
- Year: 2022
- Volume: 15
- Issue: 3.3
- 26
- 2499
- Pages: 311-314
Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface
- Year: 2023
- Volume: 16
- Issue: 1.1
- 16
- 2005
- Pages: 153-157
Optical properties of single InGaN nanowires with core-shell structure
- Year: 2023
- Volume: 16
- Issue: 1.2
- 32
- 2140
- Pages: 114-120
Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate
- Year: 2023
- Volume: 16
- Issue: 1.2
- 43
- 2308
- Pages: 179-184
Quantum dot-induced photoluminescence enhancement of InGaN nanowires
- Year: 2023
- Volume: 16
- Issue: 3.2
- 5
- 1365
- Pages: 255-260