Vladislav O. Gridchin
Vladislav O. Gridchin

Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 26
  • 5319
  • Pages: 31-35

Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 38
  • 5243
  • Pages: 281-284

Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 31
  • 5185
  • Pages: 311-314

Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 24
  • 4440
  • Pages: 153-157

Optical properties of single InGaN nanowires with core-shell structure

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 48
  • 4748
  • Pages: 114-120

Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 66
  • 5008
  • Pages: 179-184

Quantum dot-induced photoluminescence enhancement of InGaN nanowires

Physical materials technology
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 13
  • 3932
  • Pages: 255-260

Pressure and temperature sensing via ZnO-PDMS based membrane for wearable electronic applications

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 30
  • 2612
  • Pages: 63-67

Influence of the wet-chemical treatment on the optical and structural properties of core-shell InGaN nanowires

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 18
  • 2765
  • Pages: 306-309

Growth of long core-shell InGaN nanowires by plasma-assisted molecular beam epitaxy with gradually increasing substrate temperature

Physics of molecules, clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 16
  • 2071
  • Pages: 143-147

Fluorescence of hybrid structures based on carbon dots and GaP, GaN, Si nanowires

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 10
  • 3356
  • Pages: 77-82

Hybrid emitters based on two-dimensional WSe2 and ordered plasmonic nanobumps

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 0
  • 72
  • Pages: 30-35

Growth of GaN nanowires with InN inserts by PA-MBE

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 0
  • 58
  • Pages: 139-142

MBE growth of wurtzite AlGaAs nanowires with zinc-blende insertions

Atom physics and physics of clusters and nanostructures
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 1
  • 64
  • Pages: 148-151

Optical studies of InGaAs/GaAs quantum well mesa structures passivated with sol-gel SiO2

Physical optics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 0
  • 44
  • Pages: 237-241

Optical characterization and surface plasmon polariton mode simulation of GaN/InGaN nanowires on Ag/AlOx film for plasmonic nanolasers

Physical materials technology
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 2
  • 54
  • Pages: 278-282

Effect of short-term heating on the morphology of AlF3 microstructures

Physical materials technology
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 0
  • 54
  • Pages: 283-286