Latest issues
- 2025, Volume 18 Issue 3 Full text
- 2025, Volume 18 Issue 2 Full text
- 2025, Volume 18 Issue 1.1 Full text
- 2025, Volume 18 Issue 1 Full text
Physical properties of InGaAs quantum dots in AlGaAs nanowires synthesized on silicon at different growth temperatures
- Year: 2022
- Volume: 15
- Issue: 3.3
- 25
- 4966
- Pages: 31-35
Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate
- Year: 2022
- Volume: 15
- Issue: 3.3
- 38
- 4916
- Pages: 281-284
Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates
- Year: 2022
- Volume: 15
- Issue: 3.3
- 31
- 4857
- Pages: 311-314
Features of MBE growth of AlGaAs nanowires with InAs quantum dots on the silicon surface
- Year: 2023
- Volume: 16
- Issue: 1.1
- 21
- 4114
- Pages: 153-157
Optical properties of single InGaN nanowires with core-shell structure
- Year: 2023
- Volume: 16
- Issue: 1.2
- 45
- 4403
- Pages: 114-120
Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate
- Year: 2023
- Volume: 16
- Issue: 1.2
- 61
- 4664
- Pages: 179-184
Quantum dot-induced photoluminescence enhancement of InGaN nanowires
- Year: 2023
- Volume: 16
- Issue: 3.2
- 11
- 3606
- Pages: 255-260
Pressure and temperature sensing via ZnO-PDMS based membrane for wearable electronic applications
- Year: 2024
- Volume: 17
- Issue: 3.1
- 30
- 2276
- Pages: 63-67
Influence of the wet-chemical treatment on the optical and structural properties of core-shell InGaN nanowires
- Year: 2024
- Volume: 17
- Issue: 3.1
- 17
- 2430
- Pages: 306-309
Growth of long core-shell InGaN nanowires by plasma-assisted molecular beam epitaxy with gradually increasing substrate temperature
- Year: 2024
- Volume: 17
- Issue: 3.2
- 15
- 1750
- Pages: 143-147
Fluorescence of hybrid structures based on carbon dots and GaP, GaN, Si nanowires
- Year: 2025
- Volume: 18
- Issue: 1.1
- 8
- 3003
- Pages: 77-82