Ivan S. Makhov
Ivan S. Makhov
Affiliation
National Research University ‘Higher School of Economics”

Near- and far-infrared emission from GaAs/AlGaAs quantum wells under interband optical excitation

Condensed matter physics
  • Year: 2013
  • Issue: 4
  • 429
  • 9484
  • Pages: 109-114

Impurity assisted terahertz luminescence in quantum well nanostructures under interband photoexсitation

Atom physics and physics of clusters and nanostructures
  • Year: 2016
  • Issue: 4
  • 88
  • 8978
  • Pages: 56-65

Auger-recombination effect on the nonequilibrium charge carriers concentration in InGaAsSb /AlGaAsSb quantum wells

Atom physics and physics of clusters and nanostructures
  • Year: 2016
  • Issue: 4
  • 116
  • 9093
  • Pages: 66-76

The investigation of optical coupling of microlasers with tapered fiber

Physical optics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 26
  • 5530
  • Pages: 167-170

Optical studies of InP nanostructures monolithically integrated in Si (100)

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 21
  • 5127
  • Pages: 260-264

Near-infrared photoluminescence in n-GaAs/AlGaAs quantum wells with different locations of compensating acceptor impurity

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 4
  • 86
  • 5607
  • Pages: 32-43

Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 32
  • 4819
  • Pages: 22-27

Optical properties of single InGaN nanowires with core-shell structure

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 48
  • 4748
  • Pages: 114-120

Multi-state lasing in microdisk lasers with InAs/GaAs quantum dots

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 26
  • 4302
  • Pages: 157-162

Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 18
  • 3853
  • Pages: 64-68

Luminescence in nanostructures with compensated quantum wells under optical and electrical pumping

Heterostructures, superlattices, quantum wells
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 27
  • 3619
  • Pages: 68-76

Photoinduced light absorption in Ge/Si quantum dots

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 43
  • 3657
  • Pages: 105-112

Quantum dots formation by InGaAs decomposition onto a patterned GaAs surface

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 12
  • 2573
  • Pages: 38-42

Study of the photoluminescence properties of subcritical InAs/GaAs quantum dots formed onto structured substrates

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 18
  • 2587
  • Pages: 79-83

Ordered GaAs NW growth on Si (111) substrates modified by two-step FIB treatment

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 0
  • 85
  • Pages: 19-22

Photoluminescence of InGaAs/InAlAs short-period superlattices grown on InP substrate

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.1
  • 0
  • 72
  • Pages: 95-98

Microdisk lasers with a bridge contact pad formed by wet chemical etching

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 0
  • 24
  • Pages: 24-28

Injection edge-emitting microlasers with InGaAs/GaAs quantum dot active region

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 0
  • 27
  • Pages: 29-32