Latest issues
- 2025, Volume 18 Issue 4
- 2025, Volume 18 Issue 3.2 Full text
- 2025, Volume 18 Issue 3.1 Full text
- 2025, Volume 18 Issue 3 Full text
Near- and far-infrared emission from GaAs/AlGaAs quantum wells under interband optical excitation
- Year: 2013
- Issue: 4
- 429
- 9484
- Pages: 109-114
Impurity assisted terahertz luminescence in quantum well nanostructures under interband photoexсitation
- Year: 2016
- Issue: 4
- 88
- 8978
- Pages: 56-65
Auger-recombination effect on the nonequilibrium charge carriers concentration in InGaAsSb /AlGaAsSb quantum wells
- Year: 2016
- Issue: 4
- 116
- 9093
- Pages: 66-76
The investigation of optical coupling of microlasers with tapered fiber
- Year: 2022
- Volume: 15
- Issue: 3.3
- 26
- 5530
- Pages: 167-170
Optical studies of InP nanostructures monolithically integrated in Si (100)
- Year: 2022
- Volume: 15
- Issue: 3.3
- 21
- 5127
- Pages: 260-264
Near-infrared photoluminescence in n-GaAs/AlGaAs quantum wells with different locations of compensating acceptor impurity
- Year: 2022
- Volume: 15
- Issue: 4
- 86
- 5607
- Pages: 32-43
Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method
- Year: 2023
- Volume: 16
- Issue: 1.1
- 32
- 4819
- Pages: 22-27
Optical properties of single InGaN nanowires with core-shell structure
- Year: 2023
- Volume: 16
- Issue: 1.2
- 48
- 4748
- Pages: 114-120
Multi-state lasing in microdisk lasers with InAs/GaAs quantum dots
- Year: 2023
- Volume: 16
- Issue: 1.3
- 26
- 4302
- Pages: 157-162
Study of InAs/GaAs quantum dots formation in subcritical growth modes on patterned substrates
- Year: 2023
- Volume: 16
- Issue: 3.1
- 18
- 3853
- Pages: 64-68
Luminescence in nanostructures with compensated quantum wells under optical and electrical pumping
- Year: 2024
- Volume: 17
- Issue: 1.1
- 27
- 3619
- Pages: 68-76
Photoinduced light absorption in Ge/Si quantum dots
- Year: 2024
- Volume: 17
- Issue: 1.1
- 43
- 3657
- Pages: 105-112
Quantum dots formation by InGaAs decomposition onto a patterned GaAs surface
- Year: 2024
- Volume: 17
- Issue: 3.1
- 12
- 2573
- Pages: 38-42
Study of the photoluminescence properties of subcritical InAs/GaAs quantum dots formed onto structured substrates
- Year: 2024
- Volume: 17
- Issue: 3.1
- 18
- 2587
- Pages: 79-83
Ordered GaAs NW growth on Si (111) substrates modified by two-step FIB treatment
- Year: 2025
- Volume: 18
- Issue: 3.1
- 0
- 85
- Pages: 19-22
Photoluminescence of InGaAs/InAlAs short-period superlattices grown on InP substrate
- Year: 2025
- Volume: 18
- Issue: 3.1
- 0
- 72
- Pages: 95-98
Microdisk lasers with a bridge contact pad formed by wet chemical etching
- Year: 2025
- Volume: 18
- Issue: 3.2
- 0
- 24
- Pages: 24-28
Injection edge-emitting microlasers with InGaAs/GaAs quantum dot active region
- Year: 2025
- Volume: 18
- Issue: 3.2
- 0
- 27
- Pages: 29-32