Articles by keywords "GaAs"

High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 3
  • 221
  • Pages: 155-159

Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 6
  • 818
  • Pages: 50-55

Ab initio modelling of In wetting layer formation on As-stabilized GaAs during first stages of droplet epitaxy

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 5
  • 854
  • Pages: 193-197

Effect of plasma-chemical treatment of Si(001) substrates on the subsequent epitaxial growth of GaAs

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 11
  • 845
  • Pages: 122-127

Modeling of interfacial profile of axial GaAs/ AlAs nanowire heterostructures

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 10
  • 1369
  • Pages: 96-100

Energy–informational hybrid photovoltaic converter of laser radiation

Physical electronics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 15
  • 1577
  • Pages: 47-51

Influence of GaP compensating layers on the characteristics of GaAs photovoltaic converters with InGaAs quantum dot arrays

Atom physics and physics of clusters and nanostructures
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 13
  • 1387
  • Pages: 411-415

Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 22
  • 1540
  • Pages: 22-27

Near-infrared photoluminescence in n-GaAs/AlGaAs quantum wells with different locations of compensating acceptor impurity

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 4
  • 78
  • 2126
  • Pages: 32-43

Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux

Physical materials technology
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 13
  • 1945
  • Pages: 315-319

Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 11
  • 1889
  • Pages: 48-53

Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 7
  • 2008
  • Pages: 42-47

Nonlinear circular dichroism in dielectric nanoparticle dimers and trimers

Physics of molecules
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 17
  • 2045
  • Pages: 321-325