Articles by keywords "GaAs"
Dependence of static and dynamic characteristics of high-voltage pulsed p–i–n diodes on the composition of heteroepitaxial AlxGa1−xAs1−ySby base layers
- Year: 2025
- Volume: 18
- Issue: 1.1
- 6
- 3097
- Pages: 140-144
Effect of illumination on positive magnetoresistance of high-mobility two-dimensional electron gas in GaAs/AlAs heterostructure
- Year: 2025
- Volume: 18
- Issue: 1.1
- 10
- 3045
- Pages: 67-71
Epitaxial growth AlGaAs from Bi-containing melts
- Year: 2025
- Volume: 18
- Issue: 1.1
- 12
- 3296
- Pages: 17-21
Mode leakage into substrate in microdisk lasers
- Year: 2024
- Volume: 17
- Issue: 3.2
- 16
- 1946
- Pages: 212-216
Study of planar microcavity structure with In0.63Ga0.37As quantum dots and non-absorbing Al0.2Ga0.8As/Al0.9Ga0.1As mirrors
- Year: 2024
- Volume: 17
- Issue: 3.1
- 20
- 2364
- Pages: 233-237
Simulation of an all-optical logical comparator based on a GaAs photonic crystal operating at a wavelength of 1.3 μm
- Year: 2024
- Volume: 17
- Issue: 3.1
- 12
- 2315
- Pages: 105-109
Influence of annealing conditions on the characteristics of nanoholes formed by focused ion beams on the GaAs(111) surface
- Year: 2024
- Volume: 17
- Issue: 3.1
- 13
- 2407
- Pages: 58-62
High-temperature high-voltage p–i–n diodes based on low doped heteroepitaxial layers AlGaAs and AlGaAsSb
- Year: 2024
- Volume: 17
- Issue: 1.1
- 14
- 2738
- Pages: 155-159
Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening
- Year: 2023
- Volume: 16
- Issue: 3.2
- 19
- 3920
- Pages: 50-55
Ab initio modelling of In wetting layer formation on As-stabilized GaAs during first stages of droplet epitaxy
- Year: 2023
- Volume: 16
- Issue: 3.1
- 10
- 3795
- Pages: 193-197
Effect of plasma-chemical treatment of Si(001) substrates on the subsequent epitaxial growth of GaAs
- Year: 2023
- Volume: 16
- Issue: 3.1
- 21
- 3684
- Pages: 122-127
Modeling of interfacial profile of axial GaAs/ AlAs nanowire heterostructures
- Year: 2023
- Volume: 16
- Issue: 1.3
- 15
- 3758
- Pages: 96-100
Energy–informational hybrid photovoltaic converter of laser radiation
- Year: 2023
- Volume: 16
- Issue: 1.2
- 25
- 4517
- Pages: 47-51
Influence of GaP compensating layers on the characteristics of GaAs photovoltaic converters with InGaAs quantum dot arrays
- Year: 2023
- Volume: 16
- Issue: 1.1
- 18
- 4000
- Pages: 411-415
Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method
- Year: 2023
- Volume: 16
- Issue: 1.1
- 32
- 4494
- Pages: 22-27
Near-infrared photoluminescence in n-GaAs/AlGaAs quantum wells with different locations of compensating acceptor impurity
- Year: 2022
- Volume: 15
- Issue: 4
- 84
- 5252
- Pages: 32-43
Independent control of size and shape of GaAs nanostructures during droplet epitaxy using ultra-low arsenic flux
- Year: 2022
- Volume: 15
- Issue: 3.3
- 18
- 4739
- Pages: 315-319
Experimental study of nanoholes formation using local droplet etching of FIB-modified GaAs (001) surface
- Year: 2022
- Volume: 15
- Issue: 3.3
- 17
- 4546
- Pages: 48-53
Multistage droplet epitaxy for the fabrication of InAs/GaAs quantum dots with ultra-low density
- Year: 2022
- Volume: 15
- Issue: 3.3
- 12
- 4919
- Pages: 42-47
Nonlinear circular dichroism in dielectric nanoparticle dimers and trimers
- Year: 2022
- Volume: 15
- Issue: 3.2
- 23
- 4488
- Pages: 321-325