Fedorov Vladimir V.
  • Publications

Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 35
  • 2328
  • Pages: 14-19

Interband photoluminescence of InAs(P)/Si nanowires

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 20
  • 2461
  • Pages: 101-107

Photoluminescence anisotropy in hybrid nanostructures based on gallium phosphide nanowire and 2D transition metal dichalcogenides

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 7
  • 1661
  • Pages: 130-136

Influence of stimulated interband emission on terahertz photoluminescence in n-type gallium arsenide layers

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3
  • 158
  • 2597
  • Pages: 29-38

Photosensitive nanostructures based on gallium phosphide nanowires and carbon dots

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 42
  • 1315
  • Pages: 113-118

Individual GaP nanowire conductivity studied with atomic force microscopy and numerical modeling

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 14
  • 1234
  • Pages: 125-130

Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 17
  • 1223
  • Pages: 143-148

Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 1
  • 20
  • 1861
  • Pages: 38-46

Photoluminescence of self-induced InAs nanowires diluted with nitrogen

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 3
  • 431
  • Pages: 34-37

Numerical modal analysis of GaP optical microcavity

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 8
  • 443
  • Pages: 115-119

The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 2
  • 36
  • 1467
  • Pages: 120-133

Formation of diluted nitride InAs1–хNх core-shell nanowires on silicon

Atom physics and physics of clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 4
  • 2
  • 277
  • Pages: 88-97

Creation of optical isolated GaP(NAs) microcavities on silicon

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 16
  • 638
  • Pages: 25-35

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