Vladimir V. Fedorov
Vladimir V. Fedorov
Affiliation
Alferov University
Publications

Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 40
  • 3930
  • Pages: 14-19

Interband photoluminescence of InAs (P)/Si nanowires

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 34
  • 4134
  • Pages: 101-107

Photoluminescence anisotropy in hybrid nanostructures based on gallium phosphide nanowire and 2D transition metal dichalcogenides

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 15
  • 3600
  • Pages: 130-136

Influence of stimulated interband emission on terahertz photoluminescence in n-type gallium arsenide layers

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3
  • 214
  • 4528
  • Pages: 29-38

Photosensitive nanostructures based on gallium phosphide nanowires and carbon dots

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 57
  • 3011
  • Pages: 113-118

Individual GaP nanowire conductivity studied with atomic force microscopy and numerical modeling

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 19
  • 2796
  • Pages: 125-130

Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 21
  • 2756
  • Pages: 143-148

Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 1
  • 25
  • 4101
  • Pages: 38-46

Photoluminescence of self-induced InAs nanowires diluted with nitrogen

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 14
  • 2338
  • Pages: 34-37

Numerical modal analysis of GaP optical microcavity

Simulation of physical processes
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 26
  • 2464
  • Pages: 115-119

The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique

Physical materials technology
  • Year: 2024
  • Volume: 17
  • Issue: 2
  • 43
  • 3551
  • Pages: 120-133

Creation of optical isolated GaP (NAs) microcavities on silicon

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 31
  • 2938
  • Pages: 25-35

Formation of diluted nitride InAs1-хNх core-shell nanowires on silicon

Atom physics and physics of clusters and nanostructures
  • Year: 2024
  • Volume: 17
  • Issue: 4
  • 21
  • 2898
  • Pages: 88-97

Structural and electrophysical properties of barium titanate epitaxial films

Structure growth, surface, and interfaces
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 8
  • 3246
  • Pages: 40-45

Fluorescence of hybrid structures based on carbon dots and GaP, GaN, Si nanowires

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 8
  • 3039
  • Pages: 77-82

Infrared photodetectors based on InAsP epitaxial nanowires on silicon

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 2
  • 32
  • 3225
  • Pages: 9-21