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Publications
Orcid ID
0000-0001-5547-9387
Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers
- Year: 2023
- Volume: 16
- Issue: 1.3
- 39
- 3883
- Pages: 14-19
Interband photoluminescence of InAs (P)/Si nanowires
- Year: 2023
- Volume: 16
- Issue: 1.3
- 33
- 4091
- Pages: 101-107
Photoluminescence anisotropy in hybrid nanostructures based on gallium phosphide nanowire and 2D transition metal dichalcogenides
- Year: 2023
- Volume: 16
- Issue: 3.2
- 15
- 3548
- Pages: 130-136
Influence of stimulated interband emission on terahertz photoluminescence in n-type gallium arsenide layers
- Year: 2023
- Volume: 16
- Issue: 3
- 214
- 4477
- Pages: 29-38
Photosensitive nanostructures based on gallium phosphide nanowires and carbon dots
- Year: 2024
- Volume: 17
- Issue: 1.1
- 57
- 2970
- Pages: 113-118
Individual GaP nanowire conductivity studied with atomic force microscopy and numerical modeling
- Year: 2024
- Volume: 17
- Issue: 1.1
- 19
- 2758
- Pages: 125-130
Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range
- Year: 2024
- Volume: 17
- Issue: 1.1
- 21
- 2723
- Pages: 143-148
Numerical simulation of operating modes of heterostructural photodiodes based on indium arsenide nanowires on the silicon substrates
- Year: 2024
- Volume: 17
- Issue: 1
- 23
- 4041
- Pages: 38-46
Photoluminescence of self-induced InAs nanowires diluted with nitrogen
- Year: 2024
- Volume: 17
- Issue: 3.1
- 12
- 2286
- Pages: 34-37
Numerical modal analysis of GaP optical microcavity
- Year: 2024
- Volume: 17
- Issue: 3.1
- 24
- 2414
- Pages: 115-119
The formation of single-domain gallium phosphide buffer layers on a silicon substrate without the use of migration enhanced epitaxy technique
- Year: 2024
- Volume: 17
- Issue: 2
- 42
- 3509
- Pages: 120-133
Creation of optical isolated GaP (NAs) microcavities on silicon
- Year: 2024
- Volume: 17
- Issue: 3
- 29
- 2889
- Pages: 25-35
Formation of diluted nitride InAs1-хNх core-shell nanowires on silicon
- Year: 2024
- Volume: 17
- Issue: 4
- 19
- 2852
- Pages: 88-97
Structural and electrophysical properties of barium titanate epitaxial films
- Year: 2025
- Volume: 18
- Issue: 1.1
- 6
- 3198
- Pages: 40-45
Fluorescence of hybrid structures based on carbon dots and GaP, GaN, Si nanowires
- Year: 2025
- Volume: 18
- Issue: 1.1
- 8
- 3003
- Pages: 77-82
Infrared photodetectors based on InAsP epitaxial nanowires on silicon
- Year: 2025
- Volume: 18
- Issue: 2
- 31
- 3176
- Pages: 9-21