Maxim Ya. Vinnichenko
Maxim Ya. Vinnichenko
Affiliation
Peter the Great St. Petersburg Polytechnic University

Carrier lifetime in InAs / GaSb superlattice structures

Condensed matter physics
  • Year: 2013
  • Issue: 2
  • 643
  • 9840
  • Pages: 15-21

Photoinduced absorption in structures with Се/Si quantum dots

Atom physics and physics of clusters and nanostructures
  • Year: 2011
  • Issue: 3
  • 0
  • 8684
  • Pages: 46-50

Electron recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells

Condensed matter physics
  • Year: 2012
  • Issue: 3
  • 0
  • 8697
  • Pages: 9-15

Optical absorption in Ge/Si quantum dots at different population densities of the dots states

Condensed matter physics
  • Year: 2012
  • Issue: 4
  • 0
  • 8887
  • Pages: 9-15

Investigation of photoditazin optical properties for expanding possibilities of photodynamic therapy

Biophysics and medical physics
  • Year: 2014
  • Issue: 3
  • 21
  • 8915
  • Pages: 110-117

Impurity assisted terahertz luminescence in quantum well nanostructures under interband photoexсitation

Atom physics and physics of clusters and nanostructures
  • Year: 2016
  • Issue: 4
  • 88
  • 8671
  • Pages: 56-65

Auger-recombination effect on the nonequilibrium charge carriers concentration in InGaAsSb /AlGaAsSb quantum wells

Atom physics and physics of clusters and nanostructures
  • Year: 2016
  • Issue: 4
  • 116
  • 8774
  • Pages: 66-76

Far-infrared radiation emission by hot two-dimensional electrons in single CaN/AICaN heterojunction

Condensed matter physics
  • Year: 2011
  • Issue: 2
  • 0
  • 8435
  • Pages: 25-30

Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 39
  • 3883
  • Pages: 14-19

Interband photoluminescence of InAs (P)/Si nanowires

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 33
  • 4091
  • Pages: 101-107

Influence of stimulated interband emission on terahertz photoluminescence in n-type gallium arsenide layers

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3
  • 214
  • 4477
  • Pages: 29-38

Optical properties of GaN epitaxial layers in mid- and far-infrared ranges

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 62
  • 3281
  • Pages: 12-19

Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 21
  • 2723
  • Pages: 143-148

Photoinduced light absorption in Ge/Si quantum dots

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 42
  • 3287
  • Pages: 105-112

Nonlinear optical phenomena in mesoporous SiO2 and Si/SiO2 nanoparticles

Physical optics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 14
  • 1977
  • Pages: 207-211

Effect of different types of phonons on the two-dimensional electron gas heating at GaN/AlGaN heterointerface

Heterostructures, superlattices, quantum wells
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 16
  • 3096
  • Pages: 58-66

Impact of geometry on semiconductor quantum dots optical properties

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 14
  • 2947
  • Pages: 88-94

Infrared photodetectors based on InAsP epitaxial nanowires on silicon

Condensed matter physics
  • Year: 2025
  • Volume: 18
  • Issue: 2
  • 31
  • 3176
  • Pages: 9-21