Vinnichenko Maxim Ya.
  • Affiliation
    Peter the Great St. Petersburg Polytechnic University

Carrier lifetime in InAs / GaSb superlattice structures

Condensed matter physics
  • Year: 2013
  • Issue: 2
  • 643
  • 8344
  • Pages: 15-21

Photoinduced absorption in structures with Се/Si quantum dots

Atom physics and physics of clusters and nanostructures
  • Year: 2011
  • Issue: 3
  • 0
  • 7286
  • Pages: 46-50

Electron recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells

Condensed matter physics
  • Year: 2012
  • Issue: 3
  • 0
  • 7151
  • Pages: 9-15

Optical absorption in Ge/Si quantum dots at different population densities of the dots states

Condensed matter physics
  • Year: 2012
  • Issue: 4
  • 0
  • 7403
  • Pages: 9-15

Investigation of photoditazin optical properties for expanding possibilities of photodynamic therapy

Biophysics and medical physics
  • Year: 2014
  • Issue: 3
  • 18
  • 7613
  • Pages: 110-117

Impurity assisted terahertz luminescence in quantum well nanostructures under interband photoexсitation

Atom physics and physics of clusters and nanostructures
  • Year: 2016
  • Issue: 4
  • 88
  • 7313
  • Pages: 56-65

Auger-recombination effect on the nonequilibrium charge carriers concentration in InGaAsSb /AlGaAsSb quantum wells

Atom physics and physics of clusters and nanostructures
  • Year: 2016
  • Issue: 4
  • 114
  • 7309
  • Pages: 66-76

Far-infrared radiation emission by hot two-dimensional electrons in single CaN/AICaN heterojunction

Condensed matter physics
  • Year: 2011
  • Issue: 2
  • 0
  • 6982
  • Pages: 25-30

Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 36
  • 2618
  • Pages: 14-19

Interband photoluminescence of InAs(P)/Si nanowires

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 24
  • 2750
  • Pages: 101-107

Influence of stimulated interband emission on terahertz photoluminescence in n-type gallium arsenide layers

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3
  • 178
  • 2910
  • Pages: 29-38

Optical properties of GaN epitaxial layers in mid- and far-infrared ranges

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 44
  • 1792
  • Pages: 12-19

Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 19
  • 1506
  • Pages: 143-148

Photoinduced light absorption in Ge/Si quantum dots

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 35
  • 1930
  • Pages: 105-112

Nonlinear optical phenomena in mesoporous SiO2 and Si/SiO2 nanoparticles

Physical optics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 8
  • 512
  • Pages: 207-211

Сообщить автору об опечатке:

Адрес страницы с ошибкой:

Текст с ошибкой:

Ваш комментарий или корректная версия: