Vinnichenko Maxim Ya.
  • Affiliation
    Peter the Great St. Petersburg Polytechnic University

Carrier lifetime in InAs / GaSb superlattice structures

Condensed matter physics
  • Year: 2013
  • Issue: 2
  • 643
  • 7695
  • Pages: 15-21

Photoinduced absorption in structures with Се/Si quantum dots

Atom physics and physics of clusters and nanostructures
  • Year: 2011
  • Issue: 3
  • 0
  • 6691
  • Pages: 46-50

Electron recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells

Condensed matter physics
  • Year: 2012
  • Issue: 3
  • 0
  • 6506
  • Pages: 9-15

Optical absorption in Ge/Si quantum dots at different population densities of the dots states

Condensed matter physics
  • Year: 2012
  • Issue: 4
  • 0
  • 6777
  • Pages: 9-15

Investigation of photoditazin optical properties for expanding possibilities of photodynamic therapy

Biophysics and medical physics
  • Year: 2014
  • Issue: 3
  • 16
  • 6944
  • Pages: 110-117

Impurity assisted terahertz luminescence in quantum well nanostructures under interband photoexсitation

Atom physics and physics of clusters and nanostructures
  • Year: 2016
  • Issue: 4
  • 87
  • 6628
  • Pages: 56-65

Auger-recombination effect on the nonequilibrium charge carriers concentration in InGaAsSb /AlGaAsSb quantum wells

Atom physics and physics of clusters and nanostructures
  • Year: 2016
  • Issue: 4
  • 114
  • 6658
  • Pages: 66-76

Far-infrared radiation emission by hot two-dimensional electrons in single CaN/AICaN heterojunction

Condensed matter physics
  • Year: 2011
  • Issue: 2
  • 0
  • 6393
  • Pages: 25-30

Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers

Bulk properties of semiconductors
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 33
  • 1973
  • Pages: 14-19

Interband photoluminescence of InAs(P)/Si nanowires

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 18
  • 2109
  • Pages: 101-107

Influence of stimulated interband emission on terahertz photoluminescence in n-type gallium arsenide layers

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3
  • 130
  • 2237
  • Pages: 29-38

Optical properties of GaN epitaxial layers in mid- and far-infrared ranges

Bulk properties of semiconductors
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 26
  • 1053
  • Pages: 12-19

Terahertz and infrared photoluminescence in a structure based on n-GaAs with a waveguide for the near-infrared range

Optoelectronic and nanoelectronic devices
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 9
  • 874
  • Pages: 143-148

Photoinduced light absorption in Ge/Si quantum dots

Quantum wires, quantum dots, and other low-dimensional systems
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 25
  • 1086
  • Pages: 105-112