Articles by keywords "heterostructures"
Photoluminescence and photoreflectance of long-wavelength HgTe/CdHgTe heterostructure
- Year: 2026
- Volume: 19
- Issue: 1.1
- 8
- 824
- Pages: 51-55
Heterostructures with ultrathin InxGa1−xAs/GaAs(001) metamorphic buffer layers and InAs/InGaAs QDs grown by molecular beam epitaxy
- Year: 2026
- Volume: 19
- Issue: 1.1
- 13
- 900
- Pages: 39-44
Radiative recombination in InAs/InAsSb/InAsSbP heterostructures
- Year: 2026
- Volume: 19
- Issue: 1.1
- 12
- 821
- Pages: 33-38
InAsSb solid solution optocouple for carbon dioxide analysis
- Year: 2025
- Volume: 18
- Issue: 3.2
- 5
- 1307
- Pages: 178-182
HOT surface illuminated phoodiodes based on n-InAsSbP/InAs/p-InAsSbP heterostructures
- Year: 2025
- Volume: 18
- Issue: 3.2
- 8
- 1410
- Pages: 110-114
Optical studies of InAs/InAsSb/InAsSbP heterostructures
- Year: 2025
- Volume: 18
- Issue: 3.1
- 7
- 1340
- Pages: 91-94
Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs
- Year: 2025
- Volume: 18
- Issue: 1.1
- 29
- 4557
- Pages: 105-110
Effect of argon ion bombardment on the composition, electronic structure and physical properties of cadmium fluoride
- Year: 2024
- Volume: 17
- Issue: 3
- 24
- 4579
- Pages: 87-96
Electroluminescence of narrow-gap InAs/InAs1–ySby/InAsSbP heterostructures with y = 0.07–0.12
- Year: 2024
- Volume: 17
- Issue: 1.1
- 28
- 4318
- Pages: 77-82
Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy
- Year: 2024
- Volume: 17
- Issue: 1.1
- 54
- 4377
- Pages: 62-67
Effects of resonant tunneling in GaAs/AlAs heterostructure
- Year: 2024
- Volume: 17
- Issue: 1.1
- 61
- 4603
- Pages: 55-61
Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers
- Year: 2024
- Volume: 17
- Issue: 1.1
- 29
- 5041
- Pages: 43-48
Structural surface characteristics of aluminum-gallium nitride films on silicon carbide nanolayers on silicon
- Year: 2023
- Volume: 16
- Issue: 3.2
- 13
- 5357
- Pages: 223-227
Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel
- Year: 2023
- Volume: 16
- Issue: 3.1
- 13
- 5124
- Pages: 133-137
Temperature dependence of the energy spectrum of metamorphic InSb/In(Ga,Al)As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy
- Year: 2023
- Volume: 16
- Issue: 3.1
- 35
- 5419
- Pages: 47-52
Polarimetry of waveguiding heterostructures with quantum well-dots
- Year: 2023
- Volume: 16
- Issue: 1.3
- 13
- 5380
- Pages: 140-145
Modeling of interfacial profile of axial GaAs/ AlAs nanowire heterostructures
- Year: 2023
- Volume: 16
- Issue: 1.3
- 17
- 5221
- Pages: 96-100
Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band
- Year: 2023
- Volume: 16
- Issue: 1.3
- 25
- 5836
- Pages: 33-38
Photoluminescence and energy transfer between CdTe/CdMnTe quantum wells separated by thick barriers
- Year: 2023
- Volume: 16
- Issue: 1.1
- 42
- 6214
- Pages: 49-53
Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method
- Year: 2023
- Volume: 16
- Issue: 1.1
- 38
- 6117
- Pages: 22-27
Exitons condensation in quasi-2D SiGe layers - Si/Si1-xGex/Si heterostructures
- Year: 2010
- Issue: 3
- 0
- 10276
- Pages: 7-13
The influence of temperature and electric field on emission of carriers out of the InAs/CaAs quantum dots
- Year: 2009
- Issue: 2
- 0
- 9518
- Pages: 11-14
Electron-hole liquid yellow-green photoluminescence in SiGe tunnel-transparent layers of silicon heterostructures
- Year: 2013
- Issue: 3
- 378
- 10184
- Pages: 60-68
The growth of gallium nitride layers with low dislocation density
- Year: 2012
- Issue: 4
- 1
- 9713
- Pages: 28-31