Articles by keywords "heterostructures"
Photoluminescence and photoreflectance of long-wavelength HgTe/CdHgTe heterostructure
- Year: 2026
- Volume: 19
- Issue: 1.1
- 8
- 913
- Pages: 51-55
Heterostructures with ultrathin InxGa1−xAs/GaAs(001) metamorphic buffer layers and InAs/InGaAs QDs grown by molecular beam epitaxy
- Year: 2026
- Volume: 19
- Issue: 1.1
- 14
- 1024
- Pages: 39-44
Radiative recombination in InAs/InAsSb/InAsSbP heterostructures
- Year: 2026
- Volume: 19
- Issue: 1.1
- 12
- 927
- Pages: 33-38
InAsSb solid solution optocouple for carbon dioxide analysis
- Year: 2025
- Volume: 18
- Issue: 3.2
- 5
- 1417
- Pages: 178-182
HOT surface illuminated phoodiodes based on n-InAsSbP/InAs/p-InAsSbP heterostructures
- Year: 2025
- Volume: 18
- Issue: 3.2
- 8
- 1527
- Pages: 110-114
Optical studies of InAs/InAsSb/InAsSbP heterostructures
- Year: 2025
- Volume: 18
- Issue: 3.1
- 9
- 1440
- Pages: 91-94
Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs
- Year: 2025
- Volume: 18
- Issue: 1.1
- 32
- 4676
- Pages: 105-110
Effect of argon ion bombardment on the composition, electronic structure and physical properties of cadmium fluoride
- Year: 2024
- Volume: 17
- Issue: 3
- 24
- 4704
- Pages: 87-96
Electroluminescence of narrow-gap InAs/InAs1–ySby/InAsSbP heterostructures with y = 0.07–0.12
- Year: 2024
- Volume: 17
- Issue: 1.1
- 29
- 4407
- Pages: 77-82
Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy
- Year: 2024
- Volume: 17
- Issue: 1.1
- 54
- 4477
- Pages: 62-67
Effects of resonant tunneling in GaAs/AlAs heterostructure
- Year: 2024
- Volume: 17
- Issue: 1.1
- 61
- 4707
- Pages: 55-61
Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers
- Year: 2024
- Volume: 17
- Issue: 1.1
- 29
- 5128
- Pages: 43-48
Structural surface characteristics of aluminum-gallium nitride films on silicon carbide nanolayers on silicon
- Year: 2023
- Volume: 16
- Issue: 3.2
- 13
- 5467
- Pages: 223-227
Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel
- Year: 2023
- Volume: 16
- Issue: 3.1
- 13
- 5226
- Pages: 133-137
Temperature dependence of the energy spectrum of metamorphic InSb/In(Ga,Al)As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy
- Year: 2023
- Volume: 16
- Issue: 3.1
- 35
- 5530
- Pages: 47-52
Polarimetry of waveguiding heterostructures with quantum well-dots
- Year: 2023
- Volume: 16
- Issue: 1.3
- 13
- 5488
- Pages: 140-145
Modeling of interfacial profile of axial GaAs/ AlAs nanowire heterostructures
- Year: 2023
- Volume: 16
- Issue: 1.3
- 17
- 5316
- Pages: 96-100
Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band
- Year: 2023
- Volume: 16
- Issue: 1.3
- 25
- 5951
- Pages: 33-38
Photoluminescence and energy transfer between CdTe/CdMnTe quantum wells separated by thick barriers
- Year: 2023
- Volume: 16
- Issue: 1.1
- 42
- 6320
- Pages: 49-53
Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method
- Year: 2023
- Volume: 16
- Issue: 1.1
- 41
- 6238
- Pages: 22-27
Exitons condensation in quasi-2D SiGe layers - Si/Si1-xGex/Si heterostructures
- Year: 2010
- Issue: 3
- 0
- 10360
- Pages: 7-13
The influence of temperature and electric field on emission of carriers out of the InAs/CaAs quantum dots
- Year: 2009
- Issue: 2
- 0
- 9598
- Pages: 11-14
Electron-hole liquid yellow-green photoluminescence in SiGe tunnel-transparent layers of silicon heterostructures
- Year: 2013
- Issue: 3
- 378
- 10279
- Pages: 60-68
The growth of gallium nitride layers with low dislocation density
- Year: 2012
- Issue: 4
- 1
- 9802
- Pages: 28-31