SPbPU Journal - Physics and Mathematics
St. Petersburg Polytechnic University Journal - Physics and Mathematics Peter the Great St. Petersburg Polytechnic University
Since 2008
ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
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Articles by keywords "heterostructures"

Structural surface characteristics of aluminum-gallium nitride films on silicon carbide nanolayers on silicon

Physical materials technology
Grashchenko A.S. Kukushkin S.A. Sharofidinov Sh.
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 5
  • 501
  • Pages: 223-227

Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel

Condensed matter physics
Nikitina E.V. Berezovskaya T.N. Pirogov E.V. Vasilkova E.I. Shubina K.Yu. Sinitskaya O.A. Sobolev M.S.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 4
  • 615
  • Pages: 133-137

Temperature dependence of the energy spectrum of metamorphic InSb/In(Ga,Al)As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy

Condensed matter physics
Chumanov I.V. Firsov D.D. Solov'ev V.А. Chernov M.Yu. Komkov O.S.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 15
  • 662
  • Pages: 47-52

Polarimetry of waveguiding heterostructures with quantum well-dots

Quantum wires, quantum dots, and other low-dimensional systems
Kharchenko A.A. Nadtochiy A.M. Mintairov S.A. Kalyuzhniy N.A. Maximov M.V.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 7
  • 1078
  • Pages: 140-145

Modeling of interfacial profile of axial GaAs/ AlAs nanowire heterostructures

Quantum wires, quantum dots, and other low-dimensional systems
Leshchenko E.D. Dubrovskii V.G.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 9
  • 1145
  • Pages: 96-100

Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band

Bulk properties of semiconductors
Osinnykh I.V. Malin T.V. Zhuravlev K.V.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 17
  • 1238
  • Pages: 33-38

Photoluminescence and energy transfer between CdTe/CdMnTe quantum wells separated by thick barriers

Condensed matter physics
Agekyan V.F. Filosofov N.G. Karczewski G. Resnitsky A.N. Serov A.Yu. Smirnov A.S. Shtrom I.V. Verbin S.Yu.
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 18
  • 1269
  • Pages: 49-53

Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method

Condensed matter physics
Melnichenko I.A. Nadtochiy A.M. Ivanov K.A. Makhov I.S. Maximov M.V. Mintairov S.A. Kalyuzhniy N.A. Kryzhanovskaya N.V. Zhukov A.E.
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 19
  • 1285
  • Pages: 22-27

Exitons condensation in quasi-2D SiGe layers - Si/Si1-xGex/Si heterostructures

Condensed matter physics
Shepel D. V. Ptashkin N. S. Burbaev T.M.
  • Year: 2010
  • Issue: 3
  • 0
  • 5890
  • Pages: 7-13

The influence of temperature and electric field on emission of carriers out of the InAs/CaAs quantum dots

Condensed matter physics
Gladyshev E.E. Gorshkov A.P.
  • Year: 2009
  • Issue: 2
  • 0
  • 5484
  • Pages: 11-14

Electron-hole liquid yellow-green photoluminescence in SiGe tunnel-transparent layers of silicon heterostructures

Condensed matter physics
Kozyrev D.S. Burbaev T.M.
  • Year: 2013
  • Issue: 3
  • 378
  • 5878
  • Pages: 60-68

The growth of gallium nitride layers with low dislocation density

Condensed matter physics
Mamaev V.V. Sidorov V.G. Petrov S.I. Alexeev A.N.
  • Year: 2012
  • Issue: 4
  • 0
  • 5434
  • Pages: 28-31