Articles by keywords "gallium arsenide"
Spin-lattice relaxation processes of nuclear spins in GaAs:Mn
- Year: 2025
- Volume: 18
- Issue: 1.1
- 22
- 238
- Pages: 6-10
Numerical optimization of semiconductor waveguide structure
- Year: 2024
- Volume: 17
- Issue: 3.2
- 10
- 663
- Pages: 98-102
Study of planar microcavity structure with In0.63Ga0.37As quantum dots and non-absorbing Al0.2Ga0.8As/Al0.9Ga0.1As mirrors
- Year: 2024
- Volume: 17
- Issue: 3.1
- 14
- 1026
- Pages: 233-237
Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si(111)
- Year: 2024
- Volume: 17
- Issue: 3.1
- 10
- 935
- Pages: 28-33
Luminescence in nanostructures with compensated quantum wells under optical and electrical pumping
- Year: 2024
- Volume: 17
- Issue: 1.1
- 25
- 2150
- Pages: 68-76
Dynamics of electron-nuclear spin system in GaAs:Mn epitaxial layers
- Year: 2024
- Volume: 17
- Issue: 1.1
- 22
- 1970
- Pages: 31-36
Features of isovalent doping of gallium arsenide with bismuth ions
- Year: 2024
- Volume: 17
- Issue: 1.1
- 14
- 1950
- Pages: 20-24
Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening
- Year: 2023
- Volume: 16
- Issue: 3.2
- 14
- 2493
- Pages: 50-55
Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth
- Year: 2023
- Volume: 16
- Issue: 3.1
- 15
- 2383
- Pages: 79-83
Study of arsenic flux effect on thermal desorption of GaAs native oxide and surface morphology
- Year: 2023
- Volume: 16
- Issue: 3.1
- 19
- 2398
- Pages: 74-78
Formation of symmetrical nanoholes by local droplet etching for site-controlled growth of single quantum dots
- Year: 2023
- Volume: 16
- Issue: 3.1
- 36
- 2706
- Pages: 53-58
Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers
- Year: 2023
- Volume: 16
- Issue: 1.3
- 36
- 2819
- Pages: 14-19
Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si
- Year: 2022
- Volume: 15
- Issue: 3.3
- 21
- 3325
- Pages: 54-58
Effect of FIB-modification of Si(111) surface on GaAs nanowire growth
- Year: 2022
- Volume: 15
- Issue: 3.3
- 14
- 3372
- Pages: 36-41