Articles by keywords "gallium arsenide"
Study of planar microcavity structure with In0.63Ga0.37As quantum dots and non-absorbing Al0.2Ga0.8As/Al0.9Ga0.1As mirrors
- Year: 2024
- Volume: 17
- Issue: 3.1
- 0
- 25
- Pages: 233-237
Control of properties and geometric characteristics of selectively formed GaAs nanowires within the FIB treatment area on Si(111)
- Year: 2024
- Volume: 17
- Issue: 3.1
- 0
- 72
- Pages: 28-33
Luminescence in nanostructures with compensated quantum wells under optical and electrical pumping
- Year: 2024
- Volume: 17
- Issue: 1.1
- 15
- 1202
- Pages: 68-76
Dynamics of electron-nuclear spin system in GaAs:Mn epitaxial layers
- Year: 2024
- Volume: 17
- Issue: 1.1
- 16
- 1103
- Pages: 31-36
Features of isovalent doping of gallium arsenide with bismuth ions
- Year: 2024
- Volume: 17
- Issue: 1.1
- 10
- 1057
- Pages: 20-24
Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening
- Year: 2023
- Volume: 16
- Issue: 3.2
- 10
- 1605
- Pages: 50-55
Effect of ion dose and accelerating voltage during focused ion beam Si(111) surface treatment on GaAs nanowires growth
- Year: 2023
- Volume: 16
- Issue: 3.1
- 13
- 1609
- Pages: 79-83
Study of arsenic flux effect on thermal desorption of GaAs native oxide and surface morphology
- Year: 2023
- Volume: 16
- Issue: 3.1
- 18
- 1585
- Pages: 74-78
Formation of symmetrical nanoholes by local droplet etching for site-controlled growth of single quantum dots
- Year: 2023
- Volume: 16
- Issue: 3.1
- 30
- 1832
- Pages: 53-58
Terahertz and stimulated near-infrared photoluminescence in bulk n-GaAs layers
- Year: 2023
- Volume: 16
- Issue: 1.3
- 33
- 2050
- Pages: 14-19
Effect of pregrowth annealing temperature on the subsequent epitaxial growth of GaAs on Si
- Year: 2022
- Volume: 15
- Issue: 3.3
- 21
- 2570
- Pages: 54-58
Effect of FIB-modification of Si(111) surface on GaAs nanowire growth
- Year: 2022
- Volume: 15
- Issue: 3.3
- 12
- 2578
- Pages: 36-41