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St. Petersburg Polytechnic University Journal: Physics and Mathematics Peter the Great St. Petersburg Polytechnic University
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ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
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Articles by keywords "InGaN"

Threshold current of separate spectral components of the emission spectrum of InGaN LEDs

Experimental technique and devices
Frolov I.V. Radaev O.A. Sergeev V.A.
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 5
  • 606
  • Pages: 161-165

Growth of long core-shell InGaN nanowires by plasma-assisted molecular beam epitaxy with gradually increasing substrate temperature

Physics of molecules, clusters and nanostructures
Gridchin V.O. Shugabaev T.M. Lendyashova V.V. Kotlyar K.P. Khrebtov A.I. Dragunova A.S. Kryzhanovskaya N.V. Reznik R.R. Cirlin G.E.
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 10
  • 663
  • Pages: 143-147

Influence of the wet-chemical treatment on the optical and structural properties of core-shell InGaN nanowires

Physical materials technology
Shugabaev T.M. Gridchin V.O. Kusnetsov A. Kulagina A.S. Khrebtov A.I. Lendyashova V.V. Reznik R.R. Cirlin G.E.
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 9
  • 890
  • Pages: 306-309

Quantum dot-induced photoluminescence enhancement of InGaN nanowires

Physical materials technology
Shugabaev T.M. Gridchin V.O. Reznik R.R. Khrebtov A.I. Melnichenko I.A. Kulagina A.S. Kotlyar K.P. Lendyashova V.V. Kryzhanovskaya N.V. Cirlin G.E.
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 8
  • 2163
  • Pages: 255-260

Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

Physical materials technology
Bondarenko D.N. Gridchin V.O. Kotlyar K.P. Reznik R.R. Kirilenko D.A. Baranov A.I. Dragunova A.S. Kryzhanovskaya N.V. Maksimova A.A. Cirlin G.E.
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 53
  • 3220
  • Pages: 179-184

Mechanisms leading to thermal quantum efficiency droop in green InGaN/GaN LEDs

Physical electronics
Shabunina E.I. Ivanov A.E. Talnishnikh Nadezhda A. Kartashova A.P. Poloskin D.S. Shmidt N.P. Zakgeim A.L. Chernyakov A.E.
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 27
  • 3107
  • Pages: 70-76

Plasma assisted molecular beam epitaxy growth of InGaN nanostructures on Si substrates

Physical materials technology
Gridchin V.O. Reznik R.R. Kotlyar K.P. Shugabaev T.M. Dragunova A.S. Kryzhanovskaya N.V. Cirlin G.E.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 27
  • 3311
  • Pages: 311-314

Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate

Physical materials technology
Bondarenko D.N. Gridchin V.O. Kotlyar K.P. Baranov A.I. Maksimova A.A. Reznik R.R. Cirlin G.E.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 35
  • 3371
  • Pages: 281-284

Optimization of InGaN-based luminescent heterostructures by genetic algorithm

Condensed matter physics
Arteev D.S. Sakharov A.V. Nikolaev A.E. Zavarin E.E. Tsatsulnikov A.F. Ustinov V.M.
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 25
  • 3518
  • Pages: 21-24

Development features of degradation processes in high-power blue InGaN/GaN light-emitting diodes

Experimental technique and devices
Basalkevich T.M. Talnishnikh Nadezhda A. Shmidt N.P.
  • Year: 2012
  • Issue: 3
  • 0
  • 7212
  • Pages: 45-48

Degradation phenomena and the problem of semiconductor light emitting sources reliability

Experimental technique and devices
Sidorov V.G. Shmidt N.P.
  • Year: 2013
  • Issue: 2
  • 6
  • 6933
  • Pages: 71-80

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