Novikov Innokenty I.
  • Affiliation
    ITMO University
  • St. Petersburg, Russian Federation

1550 nm high-speed VCSELS based on compressively strained In(Al)GaAs QWs

Experimental technique and devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 37
  • 2591
  • Pages: 456-462

1300 nm VCSELS with active region based on InGaAs/InGaAlAs superlattice for long-distance transmission

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 17
  • 2355
  • Pages: 153-159

1.55 μm optical-fiber transmitter based on vertical cavity surface emitting laser obtained by wafer fusion technology

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 18
  • 2309
  • Pages: 163-169

Emission linewidth and α-factor of 1.3 µm-range vertical cavity surface emitting laser based on InGaAs/InAlGaAs superlattice

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 29
  • 1809
  • Pages: 9-15

Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 10
  • 1839
  • Pages: 50-55

Study of planar microcavity structure with In0.63Ga0.37As quantum dots and non-absorbing Al0.2Ga0.8As/Al0.9Ga0.1As mirrors

Physical optics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 5
  • 368
  • Pages: 233-237

Temperature performance of ring quantum-cascade laser with staircase-like distributed feedback grating

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 4
  • 169
  • Pages: 71-77

Influence of the doping level in the absorption layer of InGaAs/InP 2.5 μm photodetectors on their electrical properties

Physical electronics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 2
  • 157
  • Pages: 182-186