Karachinsky Leonid Ya.

1550 nm high-speed VCSELS based on compressively strained In(Al)GaAs QWs

Experimental technique and devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 39
  • 2850
  • Pages: 456-462

1300 nm VCSELS with active region based on InGaAs/InGaAlAs superlattice for long-distance transmission

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 1.2
  • 18
  • 2594
  • Pages: 153-159

1.55 μm optical-fiber transmitter based on vertical cavity surface emitting laser obtained by wafer fusion technology

Optoelectronic and nanoelectronic devices
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 19
  • 2552
  • Pages: 163-169

Emission linewidth and α-factor of 1.3 µm-range vertical cavity surface emitting laser based on InGaAs/InAlGaAs superlattice

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 32
  • 2110
  • Pages: 9-15

Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 12
  • 2158
  • Pages: 50-55

Study of planar microcavity structure with In0.63Ga0.37As quantum dots and non-absorbing Al0.2Ga0.8As/Al0.9Ga0.1As mirrors

Physical optics
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 6
  • 638
  • Pages: 233-237

Temperature performance of ring quantum-cascade laser with staircase-like distributed feedback grating

Condensed matter physics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 10
  • 416
  • Pages: 71-77

Influence of the doping level in the absorption layer of InGaAs/InP 2.5 μm photodetectors on their electrical properties

Physical electronics
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 6
  • 417
  • Pages: 182-186

Сообщить автору об опечатке:

Адрес страницы с ошибкой:

Текст с ошибкой:

Ваш комментарий или корректная версия: