Latest issues
- 2025, Volume 18 Issue 4
- 2025, Volume 18 Issue 3.2 Full text
- 2025, Volume 18 Issue 3.1 Full text
- 2025, Volume 18 Issue 3 Full text
1550 nm high-speed VCSELS based on compressively strained In (Al)GaAs QWs
- Year: 2023
- Volume: 16
- Issue: 1.1
- 46
- 4759
- Pages: 456-462
1300 nm VCSELS with active region based on InGaAs/InGaAlAs superlattice for long-distance transmission
- Year: 2023
- Volume: 16
- Issue: 1.2
- 22
- 4442
- Pages: 153-159
1.55 μm optical-fiber transmitter based on vertical cavity surface emitting laser obtained by wafer fusion technology
- Year: 2023
- Volume: 16
- Issue: 1.3
- 20
- 4167
- Pages: 163-169
Emission linewidth and α-factor of 1.3 µm-range vertical cavity surface emitting laser based on InGaAs/InAlGaAs superlattice
- Year: 2023
- Volume: 16
- Issue: 3.2
- 36
- 4170
- Pages: 9-15
Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening
- Year: 2023
- Volume: 16
- Issue: 3.2
- 20
- 4289
- Pages: 50-55
Study of planar microcavity structure with In0.63Ga0.37As quantum dots and non-absorbing Al0.2Ga0.8As/Al0.9Ga0.1As mirrors
- Year: 2024
- Volume: 17
- Issue: 3.1
- 20
- 2715
- Pages: 233-237
Temperature performance of ring quantum-cascade laser with staircase-like distributed feedback grating
- Year: 2024
- Volume: 17
- Issue: 3.2
- 18
- 2339
- Pages: 71-77
Influence of the doping level in the absorption layer of InGaAs/InP 2.5 μm photodetectors on their electrical properties
- Year: 2024
- Volume: 17
- Issue: 3.2
- 24
- 2274
- Pages: 182-186
Increase in the modulation bandwidth of the high-speed VCSEL 1550 nm by active region p-type doping
- Year: 2025
- Volume: 18
- Issue: 1.1
- 16
- 3358
- Pages: 117-121
Structural and morphological characterization of InGaAs/InP 2.5 μm photodetector heterostructures with different metamorphic buffer layer profiles
- Year: 2025
- Volume: 18
- Issue: 3.2
- 0
- 8
- Pages: 172-177