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Publications
Orcid ID
0000-0003-1835-1629
Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
- Year: 2022
- Volume: 15
- Issue: 3.3
- 35
- 4652
- Pages: 157-162
Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel
- Year: 2023
- Volume: 16
- Issue: 3.1
- 10
- 3577
- Pages: 133-137
The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates
- Year: 2023
- Volume: 16
- Issue: 3.1
- 13
- 3401
- Pages: 439-443
GaN based ultraviolet narrowband photodetectors
- Year: 2024
- Volume: 17
- Issue: 3.1
- 13
- 2207
- Pages: 220-223
Influence of the doping level in the absorption layer of InGaAs/InP 2.5 μm photodetectors on their electrical properties
- Year: 2024
- Volume: 17
- Issue: 3.2
- 22
- 1925
- Pages: 182-186
Study of GaPN (As) layers grown by molecular beam epitaxy on silicon substrates
- Year: 2024
- Volume: 17
- Issue: 3.2
- 11
- 2035
- Pages: 275-278
Near-UV detectors based on ultrathin GaN epitaxial layers
- Year: 2025
- Volume: 18
- Issue: 1.1
- 9
- 3020
- Pages: 100-104