SPbPU Journal - Physics and Mathematics
St. Petersburg Polytechnic University Journal: Physics and Mathematics Peter the Great St. Petersburg Polytechnic University
Since 2008
ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
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Author Kseniia Yu. Shubina
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Kseniia Yu. Shubina
Kseniia Yu. Shubina
Affiliation
Alferov University
St. Petersburg, Russian Federation
Publications
Orcid ID
0000-0003-1835-1629

Development of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

Physical optics
Sinitskaya O.A. Shubina K.Yu. Mokhov D.V. Uvarov A.V. Filatov V.V. Mizerov A.M. Timoshnev S.N. Nikitina E.V.
  • Year: 2022
  • Volume: 15
  • Issue: 3.3
  • 35
  • 5000
  • Pages: 157-162

Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel

Condensed matter physics
Nikitina E.V. Berezovskaya T.N. Pirogov E.V. Vasilkova E.I. Shubina K.Yu. Sinitskaya O.A. Sobolev M.S.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 10
  • 3891
  • Pages: 133-137

The effect of the dielectric SiO2 layer on the characteristics of visible-blind ultraviolet photodetectors based on ultrathin GaN epitaxial layers grown on c-Al2O3 substrates

Physical electronics
Sinitskaya O.A. Shubina K.Yu. Mokhov D.V. Uvarov A.V. Mizerov A.M. Nikitina E.V.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 15
  • 3727
  • Pages: 439-443

GaN based ultraviolet narrowband photodetectors

Physical optics
Sinitskaya O.A. Shubina K.Yu. Mokhov D.V. Baranov A.I. Mizerov A.M. Nikitina E.V.
  • Year: 2024
  • Volume: 17
  • Issue: 3.1
  • 14
  • 2562
  • Pages: 220-223

Influence of the doping level in the absorption layer of InGaAs/InP 2.5 μm photodetectors on their electrical properties

Physical electronics
Barantsev O.V. Vasilkova E.I. Pirogov E.V. Shubina K.Yu. Baranov A.I. Voropaev K.O. Vasil’ev A.A. Karachinsky L.Ya. Novikov I.I. Sobolev M.S.
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 24
  • 2274
  • Pages: 182-186

Study of GaPN (As) layers grown by molecular beam epitaxy on silicon substrates

Physical materials technology
Nikitina E.V. Shubina K.Yu. Sobolev M.S. Pirogov E.V.
  • Year: 2024
  • Volume: 17
  • Issue: 3.2
  • 12
  • 2361
  • Pages: 275-278

Near-UV detectors based on ultrathin GaN epitaxial layers

Optoelectronic and nanoelectronic devices
Shubina K.Yu. Sinitskaya O.A. Enns Ya.B. Mizerov A.M. Nikitina E.V.
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 10
  • 3398
  • Pages: 100-104

Effect of rapid thermal annealing on the properties of GaPN (As)-based heterostructures grown on silicon substrates

Condensed matter physics
Khrul S.N. Shubina K.Yu. Pirogov E.V. Kaveev A.K. Nikitina E.V.
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 0
  • 21
  • Pages: 45-48

High-sensitivity and low-noise GaN-based ultraviolet photodetectors

Physical optics
Sinitskaya O.A. Shubina K.Yu. Mizerov A.M. Nikitina E.V.
  • Year: 2025
  • Volume: 18
  • Issue: 3.2
  • 0
  • 7
  • Pages: 196-199