SPbPU Journal - Physics and Mathematics
St. Petersburg Polytechnic University Journal: Physics and Mathematics Peter the Great St. Petersburg Polytechnic University
Since 2008
ISSN 2304-9782
ISSN 2618-8686
ISSN 2405-7223
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Articles by keywords "heterostructures"

Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs

Optoelectronic and nanoelectronic devices
Kirilenko I.D. Ruzhevich M.S. Romanov V.V. Moiseev K.D. Dorogov M.V. Tomkovich M.V. Firsov D.D. Chumanov I.V. Komkov O.S. Mynbaev K.D.
  • Year: 2025
  • Volume: 18
  • Issue: 1.1
  • 14
  • 3001
  • Pages: 105-110

Effect of argon ion bombardment on the composition, electronic structure and physical properties of cadmium fluoride

Physical materials technology
Abduvayitov A. A. Tashmukhamedova D.A. Umirzakov B.Y. Bekpulatov I.R. Khujaniyozov J. B. Loboda V.V.
  • Year: 2024
  • Volume: 17
  • Issue: 3
  • 16
  • 2704
  • Pages: 87-96

Electroluminescence of narrow-gap InAs/InAs1–ySby/InAsSbP heterostructures with y = 0.07–0.12

Heterostructures, superlattices, quantum wells
Ruzhevich M.S. Mynbaev K.D. Bazhenov N.L. Romanov V.V. Moiseev K.D.
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 27
  • 2780
  • Pages: 77-82

Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy

Heterostructures, superlattices, quantum wells
Chumanov I.V. Firsov D.D. Kolyada D.V. Komkov O.S. Skvortsov I.V. Mashanov V.I. Timofeev V.A.
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 45
  • 2784
  • Pages: 62-67

Effects of resonant tunneling in GaAs/AlAs heterostructure

Heterostructures, superlattices, quantum wells
Domoratsky E.V. Zakharchenko M.V. Glinsky G. F.
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 51
  • 2914
  • Pages: 55-61

Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers

Structure growth, surface, and interfaces
Osinnykh I.V. Malin T.V. Milakhin D.S. Zhuravlev K.V.
  • Year: 2024
  • Volume: 17
  • Issue: 1.1
  • 26
  • 3327
  • Pages: 43-48

Structural surface characteristics of aluminum-gallium nitride films on silicon carbide nanolayers on silicon

Physical materials technology
Grashchenko A.S. Kukushkin S.A. Sharofidinov Sh.
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 11
  • 3788
  • Pages: 223-227

Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel

Condensed matter physics
Nikitina E.V. Berezovskaya T.N. Pirogov E.V. Vasilkova E.I. Shubina K.Yu. Sinitskaya O.A. Sobolev M.S.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 10
  • 3577
  • Pages: 133-137

Temperature dependence of the energy spectrum of metamorphic InSb/In(Ga,Al)As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy

Condensed matter physics
Chumanov I.V. Firsov D.D. Solov'ev V.А. Chernov M.Yu. Komkov O.S.
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 30
  • 3740
  • Pages: 47-52

Polarimetry of waveguiding heterostructures with quantum well-dots

Quantum wires, quantum dots, and other low-dimensional systems
Kharchenko A.A. Nadtochiy A.M. Mintairov S.A. Kalyuzhniy N.A. Maximov M.V.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 12
  • 3859
  • Pages: 140-145

Modeling of interfacial profile of axial GaAs/ AlAs nanowire heterostructures

Quantum wires, quantum dots, and other low-dimensional systems
Leshchenko E.D. Dubrovskii V.G.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 15
  • 3758
  • Pages: 96-100

Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band

Bulk properties of semiconductors
Osinnykh I.V. Malin T.V. Zhuravlev K.V.
  • Year: 2023
  • Volume: 16
  • Issue: 1.3
  • 22
  • 4160
  • Pages: 33-38

Photoluminescence and energy transfer between CdTe/CdMnTe quantum wells separated by thick barriers

Condensed matter physics
Agekyan V.F. Filosofov N.G. Karczewski G. Resnitsky A.N. Serov A.Yu. Smirnov A.S. Shtrom I.V. Verbin S.Yu.
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 38
  • 4517
  • Pages: 49-53

Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method

Condensed matter physics
Melnichenko I.A. Nadtochiy A.M. Ivanov K.A. Makhov I.S. Maximov M.V. Mintairov S.A. Kalyuzhniy N.A. Kryzhanovskaya N.V. Zhukov A.E.
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 32
  • 4494
  • Pages: 22-27

Exitons condensation in quasi-2D SiGe layers - Si/Si1-xGex/Si heterostructures

Condensed matter physics
Shepel D. V. Ptashkin N. S. Burbaev T.M.
  • Year: 2010
  • Issue: 3
  • 0
  • 8799
  • Pages: 7-13

The influence of temperature and electric field on emission of carriers out of the InAs/CaAs quantum dots

Condensed matter physics
Gladyshev E.E. Gorshkov A.P.
  • Year: 2009
  • Issue: 2
  • 0
  • 8186
  • Pages: 11-14

Electron-hole liquid yellow-green photoluminescence in SiGe tunnel-transparent layers of silicon heterostructures

Condensed matter physics
Kozyrev D.S. Burbaev T.M.
  • Year: 2013
  • Issue: 3
  • 378
  • 8785
  • Pages: 60-68

The growth of gallium nitride layers with low dislocation density

Condensed matter physics
Mamaev V.V. Sidorov V.G. Petrov S.I. Alexeev A.N.
  • Year: 2012
  • Issue: 4
  • 0
  • 8344
  • Pages: 28-31