Articles by keywords "heterostructures"
Influence of disordering in InAsSbP barrier layers on the characteristics of InAsSb-based LEDs
- Year: 2025
- Volume: 18
- Issue: 1.1
- 3
- 119
- Pages: 105-110
Effect of argon ion bombardment on the composition, electronic structure and physical properties of cadmium fluoride
- Year: 2024
- Volume: 17
- Issue: 3
- 14
- 1197
- Pages: 87-96
Electroluminescence of narrow-gap InAs/InAs1–ySby/InAsSbP heterostructures with y = 0.07–0.12
- Year: 2024
- Volume: 17
- Issue: 1.1
- 26
- 1728
- Pages: 77-82
Study of the band structure of GeSiSn/Ge/Si heterostructures by FTIR photoreflectance spectroscopy
- Year: 2024
- Volume: 17
- Issue: 1.1
- 33
- 1737
- Pages: 62-67
Effects of resonant tunneling in GaAs/AlAs heterostructure
- Year: 2024
- Volume: 17
- Issue: 1.1
- 33
- 1744
- Pages: 55-61
Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers
- Year: 2024
- Volume: 17
- Issue: 1.1
- 24
- 2005
- Pages: 43-48
Structural surface characteristics of aluminum-gallium nitride films on silicon carbide nanolayers on silicon
- Year: 2023
- Volume: 16
- Issue: 3.2
- 11
- 2335
- Pages: 223-227
Long-term stability of GaAs-based pseudomorphic transistor heterostructures with InGaAs channel
- Year: 2023
- Volume: 16
- Issue: 3.1
- 7
- 2267
- Pages: 133-137
Temperature dependence of the energy spectrum of metamorphic InSb/In(Ga,Al)As/GaAs heterostructures studied using FTIR photoreflectance spectroscopy
- Year: 2023
- Volume: 16
- Issue: 3.1
- 26
- 2362
- Pages: 47-52
Polarimetry of waveguiding heterostructures with quantum well-dots
- Year: 2023
- Volume: 16
- Issue: 1.3
- 9
- 2750
- Pages: 140-145
Modeling of interfacial profile of axial GaAs/ AlAs nanowire heterostructures
- Year: 2023
- Volume: 16
- Issue: 1.3
- 13
- 2733
- Pages: 96-100
Determination of donor and acceptor concentrations in GaN using yellow photoluminescence band
- Year: 2023
- Volume: 16
- Issue: 1.3
- 20
- 2970
- Pages: 33-38
Photoluminescence and energy transfer between CdTe/CdMnTe quantum wells separated by thick barriers
- Year: 2023
- Volume: 16
- Issue: 1.1
- 29
- 3043
- Pages: 49-53
Time-resolved photoluminescence study of InGaAs/GaAs quantum well-dots with upconversion method
- Year: 2023
- Volume: 16
- Issue: 1.1
- 28
- 3102
- Pages: 22-27
Exitons condensation in quasi-2D SiGe layers - Si/Si1-xGex/Si heterostructures
- Year: 2010
- Issue: 3
- 0
- 7488
- Pages: 7-13
The influence of temperature and electric field on emission of carriers out of the InAs/CaAs quantum dots
- Year: 2009
- Issue: 2
- 0
- 6975
- Pages: 11-14
Electron-hole liquid yellow-green photoluminescence in SiGe tunnel-transparent layers of silicon heterostructures
- Year: 2013
- Issue: 3
- 378
- 7513
- Pages: 60-68
The growth of gallium nitride layers with low dislocation density
- Year: 2012
- Issue: 4
- 0
- 7100
- Pages: 28-31