Articles by keywords "growth"

Photoluminescence study of InGaAs/GaAs quantum dots with bimodal inhomogeneous broadening

Physical optics
  • Year: 2023
  • Volume: 16
  • Issue: 3.2
  • 4
  • 491
  • Pages: 50-55

Effect of temperature during homoepitaxial growth of Si on Si(100) on the character of reflection high-energy electron diffraction patterns

Condensed matter physics
  • Year: 2023
  • Volume: 16
  • Issue: 3.1
  • 9
  • 621
  • Pages: 112-116

Numerical simulation of the temperature field distribution in the epitaxial graphene growth setup

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 20
  • 1276
  • Pages: 309-314

Adaptation of the Monte-Carlo method for modeling layer-by-layer growth of clusters and nanoalloys

Simulation of physical processes
  • Year: 2023
  • Volume: 16
  • Issue: 1.1
  • 11
  • 1268
  • Pages: 225-230

The ways to form midi-fullerens structure exemplified by С22, С24 and С26 isomers

Physics of molecules
  • Year: 2023
  • Volume: 16
  • Issue: 1
  • 6
  • 1417
  • Pages: 125-131

Effect of noble metal nanoparticles in transition metal oxide magnetron sputtering

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.2
  • 7
  • 1752
  • Pages: 86-90

Effect of thickness and annealing of the Si(001)2×1-Cu wetting layer on the morphology of layered nanofilms based on Fe, Co, and Cu and their ferromagnetic properties

Atom physics and physics of clusters and nanostructures
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 18
  • 2043
  • Pages: 131-136

Electronic structure and optical properties of Ca2Si films grown on silicon different oriented substrates and calculated from first principles

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 34
  • 2057
  • Pages: 16-21

Formation, structure, and optical properties of singlephase CaSi and CaSi2 films on Si substrates

Condensed matter physics
  • Year: 2022
  • Volume: 15
  • Issue: 3.1
  • 60
  • 2123
  • Pages: 9-15

Geometric modeling of midi-fullerene growth from C32 to C60

Atom physics and physics of clusters and nanostructures
  • Year: 2017
  • Volume: 10
  • Issue: 1
  • 181
  • 6204
  • Pages: 47-54

Geometric modeling of midi-fullerenes growth from C24 to C48.

Atom physics and physics of clusters and nanostructures
  • Year: 2016
  • Issue: 3
  • 118
  • 5517
  • Pages: 52-58

Mechanical stresses in gallium nitride films grown on substrates with a mask

Condensed matter physics
  • Year: 2011
  • Issue: 3
  • 1
  • 5692
  • Pages: 14-16

Growth modes of HVPE gallium nitride films

Condensed matter physics
  • Year: 2011
  • Issue: 3
  • 0
  • 5385
  • Pages: 10-13